VISHAY SiHS90N65E Power MOSFET
FEATURES
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
High-intensity discharge (HID)
Fluorescent ballast lighting - Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
| PRODUCT SUMMARY | ||
| VDS (V) at TJ max. | 700 | |
| RDS(on) (W) typ. at 25 °C | VGS = 10 V | 0.025 |
| Qg (nC) max. | 591 | |
| Qgs (nC) | 84 | |
| Qgd (nC) | 160 | |
| Configuration | Single | |
INFORMATION
| ORDERING INFORMATION | |
| Package | Super-247 |
| Lead (Pb)-free | SiHS90N65E-GE3 |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | 650 | V | ||
| Gate-source voltage | VGS | ± 30 | |||
| Continuous drain current (TJ = 150 °C) | VGS at 10 V | TC = 25 °C | ID | 87 |
A |
| TC = 100 °C | 55 | ||||
| Pulsed drain current a | IDM | 323 | |||
| Linear derating factor | 5 | W/°C | |||
| Single pulse avalanche energy b | EAS | 1930 | mJ | ||
| Maximum power dissipation | PD | 625 | W | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C | ||
| Drain-source voltage slope | TJ = 125 °C | dV/dt | 41 | V/ns | |
| Reverse diode dV/dt d | 4.1 | ||||
| Soldering recommendations (peak temperature) c | for 10 s | 300 | °C | ||
Notes
- Repetitive rating; pulse width limited by maximum junction temperature
- VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 11.7 A
- 1.6 mm from case
- ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum junction-to-ambient | RthJA | – | 40 | °C/W |
| Maximum junction-to-case (drain) | RthJC | – | 0.2 | |
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 650 | – | – | V | |
| VDS temperature coefficient | DVDS/TJ | Reference to 25 °C, ID = 1 mA | – | 0.83 | – | V/°C | |
| Gate threshold voltage (N) | VGS(th) | VDS = VGS, ID = 250 μA | 2.0 | – | 4.0 | V | |
| Gate-source leakage | IGSS | VGS = ± 20 V | – | – | ± 100 | nA | |
| VGS = ± 30 V | – | – | ± 1 | μA | |||
| Zero gate voltage drain current | IDSS | VDS = 650 V, VGS = 0 V | – | – | 1 | μA | |
| VDS = 520 V, VGS = 0 V, TJ = 125 °C | – | – | 25 | ||||
| Drain-source on-state resistance | RDS(on) | VGS = 10 V | ID = 45 A | – | 0.025 | 0.029 | W |
| Forward transconductance a | gfs | VDS = 30 V, ID = 45 A | – | 32 | – | S | |
| Dynamic | |||||||
| Input capacitance | Ciss | VGS = 0 V, VDS = 100 V,
f = 300 kHz |
– | 11 826 | – |
pF |
|
| Output capacitance | Coss | – | 528 | – | |||
| Reverse transfer capacitance | Crss | – | 9 | – | |||
| Effective output capacitance, energy related a | Co(er) |
VGS = 0 V, VDS = 0 V to 520 V |
– | 384 | – | ||
| Effective output capacitance, time related b | Co(tr) | – | 1502 | – | |||
| Total gate charge | Qg |
VGS = 10 V |
ID = 45 A, VDS = 520 V |
– | 394 | 591 |
nC |
| Gate-source charge | Qgs | – | 84 | – | |||
| Gate-drain charge | Qgd | – | 160 | – | |||
| Turn-on delay time | td(on) |
VDD = 520 V, ID = 45 A, VGS = 10 V, Rg = 9.1 W |
– | 85 | 128 |
ns |
|
| Rise time | tr | – | 152 | 228 | |||
| Turn-off delay time | td(off) | – | 323 | 485 | |||
| Fall time | tf | – | 267 | 401 | |||
| Gate input resistance | Rg | f = 1 MHz, open drain | 0.6 | 1.2 | 2.4 | W | |
| Drain-Source Body Diode Characteristics | |||||||
| Continuous source-drain diode current | IS | MOSFET symbol
D showing the integral reverse G p – n junction diode S |
– | – | 87 |
A |
|
| Pulsed diode forward current | ISM | – | – | 323 | |||
| Diode forward voltage | VSD | TJ = 25 °C, IS = 45 A, VGS = 0 V | – | 0.9 | 1.2 | V | |
| Reverse recovery time | trr |
TJ = 25 °C, IF = IS = 45 A, dI/dt = 100 A/μs, VR = 25 V |
– | 971 | 1942 | ns | |
| Reverse recovery charge | Qrr | – | 26 | 52 | μC | ||
| Reverse recovery current | IRRM | – | 42 | – | A | ||
Notes
- Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS
- Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TO-274AA (High Voltage)
VERSION 1: FACILITY CODE = Y
| MILLIMETERS | INCHES | |||
| DIM. | MIN. | MAX. | MIN. | MAX. |
| A | 4.70 | 5.30 | 0.185 | 0.209 |
| A1 | 1.50 | 2.50 | 0.059 | 0.098 |
| A2 | 2.25 | 2.65 | 0.089 | 0.104 |
| b | 1.30 | 1.60 | 0.051 | 0.063 |
| b2 | 1.80 | 2.20 | 0.071 | 0.087 |
| b4 | 3.00 | 3.25 | 0.118 | 0.128 |
| c (1) | 0.38 | 0.89 | 0.015 | 0.035 |
| D | 19.80 | 20.80 | 0.780 | 0.819 |
| MILLIMETERS | INCHES | |||
| DIM. | MIN. | MAX. | MIN. | MAX. |
| D1 | 15.50 | 16.10 | 0.610 | 0.634 |
| D2 | 0.70 | 1.30 | 0.028 | 0.051 |
| E | 15.10 | 16.10 | 0.594 | 0.634 |
| E1 | 13.30 | 13.90 | 0.524 | 0.547 |
| e | 5.45 BSC | 0.215 BSC | ||
| L | 13.70 | 14.70 | 0.539 | 0.579 |
| L1 | 1.00 | 1.60 | 0.039 | 0.063 |
| R | 2.00 | 3.00 | 0.079 | 0.118 |
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outer extremes of the plastic body
- Outline conforms to JEDEC® outline to TO-274AA
(1) Dimension measured at tip of lead
VERSION 2: FACILITY CODE = N
| MILLIMETERS | MILLIMETERS | |||||
| DIM. | MIN. | MAX. | DIM. | MIN. | MAX. | |
| A | 4.83 | 5.21 | D1 | 16.25 | 17.65 | |
| A1 | 2.29 | 2.54 | D2 | 0.50 | 0.80 | |
| A2 | 1.91 | 2.16 | E | 15.75 | 16.13 | |
| b’ | 1.07 | 1.28 | E1 | 13.10 | 14.15 | |
| b | 1.07 | 1.33 | E2 | 3.68 | 5.10 | |
| b1 | 1.91 | 2.41 | E3 | 1.00 | 1.90 | |
| b2 | 1.91 | 2.16 | E4 | 12.38 | 13.43 | |
| b3 | 2.87 | 3.38 | e | 5.44 BSC | ||
| b4 | 2.87 | 3.13 | N | 3 | ||
| c’ | 0.55 | 0.65 | L | 19.81 | 20.32 | |
| c | 0.55 | 0.68 | L1 | 3.70 | 4.00 | |
| D | 20.80 | 21.10 | Q | 5.49 | 6.00 | |
| ECN: E20-0538-Rev. C, 19-Oct-2020 DWG: 5975 | ||||||
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Outline conforms to JEDEC® outline to TO-274AD
- Dimensions are measured in mm, angles are in degree
- Metal surfaces are tin plated, except area of cut
Disclaimer
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Documents / Resources
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VISHAY SiHS90N65E Power MOSFET [pdf] Instruction Manual SiHS90N65E Power MOSFET, SiHS90N65E, Power MOSFET, MOSFET |
