VISHAY SIA416DJ Siliconix Discrete Semiconductor

Specifications:

• Manufacturer: Vishay Siliconix
• Product Name: SiA416DJ
• Channel Type: N-Channel
• Maximum Drain-Source Voltage (VDS): 100V
• Maximum On-State Resistance (RDS(on)): 0.083 ohms at VGS = 10V, 0.130 ohms at VGS = 4.5V
• Continuous Drain Current (ID): 11.3A
• Total Gate Charge (Qg): 3.5nC
• Package Type: PowerPAK SC-70-6L-Single
• Lead-free and Halogen-free

Product Usage Instructions

Features and Parameters:

• Maximum Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 11.3A
• Total Gate Charge (Qg): 3.5nC
• Maximum Power Dissipation: 12W
• Operating Temperature Range: -55°C to 150°C
• Soldering Peak Temperature: 260°C

Static Parameters:

• Drain-Source Breakdown Voltage: 100V
• Gate-Source Threshold Voltage: 3V
• Zero Gate Voltage Drain Current: 10nA
• On-State Drain Current: 9A
• Drain-Source On-State Resistance: 0.083 ohms at VGS = 10V, 0.130 ohms at VGS = 4.5V

Dynamic Parameters:

• Total Gate Charge: 3.5nC
• Input Capacitance: 295pF
• Output Capacitance: 92pF
• Reverse Transfer Capacitance: 16pF
• Turn-On Delay Time: 25ns
• Rise Time: 50ns
• Turn-Off Delay Time: 100ns
• Fall Time: 200ns

Frequently Asked Questions (FAQ):

1. Q: What is the maximum operating temperature range for the SiA416DJ MOSFET?
   A: The MOSFET can operate within a temperature range of -55°C to 150°C.
2. Q: Does the SiA416DJ MOSFET come with lead and halogen-free options?
   A: Yes, the ordering information includes lead (Pb)-free and Halogen-free options.
3. Q: What is the maximum drain-source voltage supported by the SiA416DJ MOSFET?
   A: The MOSFET supports a maximum drain-source voltage of 100V.
4. Q: What is the total gate charge for the SiA416DJ MOSFET?
   A: The total gate charge is specified to be 3.5nC.

PRODUCT SUMMARY
VDS (V)	RDS(on) (W) Max.	ID (A)a	Qg (Typ.)
100	0.083 at VGS = 10 V	11.3	3.5 nC
	0.130 at VGS = 4.5 V	9

PowerPAK SC-70-6L-Single

Ordering Information:
SiA416DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
  For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• DC/DC Converters
• Full-Bridge Converters
• For Power Bricks and POL Power

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	100	V
Gate-Source Voltage		VGS	± 20
Continuous Drain Current (TJ = 150 °C)	TC = 25 °C	ID	11.3	A
	TC = 70 °C		9
	TA = 25 °C		4.8b, c
	TA = 70 °C		3.9b, c
Pulsed Drain Current (t = 300 µs)		IDM	15
Continuous Source-Drain Diode Current	TC = 25 °C	IS	12
	TA = 25 °C		2.9b, c
Single Pulse Avalanche Current	L = 0.1 mH	IAS	3
Single Pulse Avalanche Energy		EAS	0.45	mJ
Maximum Power Dissipation	TC = 25 °C	PD	19	W
	TC = 70 °C		12
	TA = 25 °C		3.5b, c
	TA = 70 °C		2.2b, c
Operating Junction and Storage Temperature Range		TJ, Tstg	– 55 to 150	°C
Soldering Recommendations (Peak Temperature)d, e			260

THERMAL RESISTANCE RATINGS
Parameter		Symbol	Typical	Maximum	Unit
Maximum Junction-to-Ambientb, f	t £ 5 s	RthJA	28	36	°C/W
Maximum Junction-to-Case (Drain)	Steady State	RthJC	5.3	6.5

Notes: 

• Based on TC = 25 °C.
• Surface mounted on 1″ x 1″ FR4 board.
• t = 5 s.
• See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
• Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
• Maximum under steady state conditions is 80 °C/W.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted
Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Static
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 µA	100			V
VDS Temperature Coefficient	DVDS/TJ	ID = 250 µA		54		mV/°C
VGS(th) Temperature Coefficient	DVGS(th)/TJ			– 4.4
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 µA	1.6		3	V
Gate-Source Leakage	IGSS	VDS = 0 V, VGS = ± 20 V			± 100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 100 V, VGS = 0 V			1	µA
		VDS = 100 V, VGS = 0 V, TJ = 55 °C			10
On-State Drain Currenta	ID(on)	VDS ³ 5 V, VGS = 10 V	10			A
Drain-Source On-State Resistancea	RDS(on)	VGS = 10 V, ID = 3.2 A		0.068	0.083	W
		VGS = 4.5 V, ID = 2.6 A		0.092	0.130
Forward Transconductancea	gfs	VDS = 10 V, ID = 3.2 A		8		S
Dynamicb
Input Capacitance	Ciss	VDS = 50 V, VGS = 0 V, f = 1 MHz		295		pF
Output Capacitance	Coss			92
Reverse Transfer Capacitance	Crss			16
Total Gate Charge	Qg	VDS = 50 V, VGS = 10 V, ID = 4.8 A		6.5	10	nC
		VDS = 50 V, VGS = 4.5 V, ID = 4.8 A		3.5	5.3
Gate-Source Charge	Qgs			1.2
Gate-Drain Charge	Qgd			1.9
Output Charge	Qoss	VDS = 50 V, VGS = 0 V		7.6
Gate Resistance	Rg	f = 1 MHz	0.4	1.8	3.6	W
Turn-On Delay Time	td(on)	VDD = 50 V, RL = 12.8 W ID @ 3.9 A, VGEN = 10 V, Rg = 1 W		5	10	ns
Rise Time	tr			13	25
Turn-Off Delay Time	td(off)			10	20
Fall Time	tf			10	20
Turn-On Delay Time	td(on)	VDD = 50 V, RL = 12.8 W ID @ 3.9 A, VGEN = 4.5 V, Rg = 1 W		25	50
Rise Time	tr			100	200
Turn-Off Delay Time	td(off)			15	30
Fall Time	tf			25	50
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current	IS	TC = 25 °C			12	A
Pulse Diode Forward Currenta	ISM				15
Body Diode Voltage	VSD	IS = 3.9 A		0.85	1.2	V
Body Diode Reverse Recovery Time	trr	IF = 3.9 A, dI/dt = 100 A/µs, TJ = 25 °C		30	60	ns
Body Diode Reverse Recovery Charge	Qrr			30	60	nC
Reverse Recovery Fall Time	ta			20		ns
Reverse Recovery Rise Time	tb			10

Notes:

• Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
• Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Safe Operating Area, Junction-to-Ambient
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating , when this rating falls below the package limit.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63649.

PowerPAK® SC70-6L

Notes:

1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating

DIM	SINGLE PAD						DUAL PAD
	MILLIMETERS			INCHES			MILLIMETERS			INCHES
	Min	Nom	Max	Min	Nom	Max	Min	Nom	Max	Min	Nom	Max
A	0.675	0.75	0.80	0.027	0.030	0.032	0.675	0.75	0.80	0.027	0.030	0.032
A1	0	–	0.05	0	–	0.002	0	–	0.05	0	–	0.002
b	0.23	0.30	0.38	0.009	0.012	0.015	0.23	0.30	0.38	0.009	0.012	0.015
C	0.15	0.20	0.25	0.006	0.008	0.010	0.15	0.20	0.25	0.006	0.008	0.010
D	1.98	2.05	2.15	0.078	0.081	0.085	1.98	2.05	2.15	0.078	0.081	0.085
D1	0.85	0.95	1.05	0.033	0.037	0.041	0.513	0.613	0.713	0.020	0.024	0.028
D2	0.135	0.235	0.335	0.005	0.009	0.013
E	1.98	2.05	2.15	0.078	0.081	0.085	1.98	2.05	2.15	0.078	0.081	0.085
E1	1.40	1.50	1.60	0.055	0.059	0.063	0.85	0.95	1.05	0.033	0.037	0.041
E2	0.345	0.395	0.445	0.014	0.016	0.018
E3	0.425	0.475	0.525	0.017	0.019	0.021
e	0.65 BSC			0.026 BSC			0.65 BSC			0.026 BSC
K	0.275 TYP			0.011 TYP			0.275 TYP			0.011 TYP
K1	0.400 TYP			0.016 TYP			0.320 TYP			0.013 TYP
K2	0.240 TYP			0.009 TYP			0.252 TYP			0.010 TYP
K3	0.225 TYP			0.009 TYP
K4	0.355 TYP			0.014 TYP
L	0.175	0.275	0.375	0.007	0.011	0.015	0.175	0.275	0.375	0.007	0.011	0.015
T							0.05	0.10	0.15	0.002	0.004	0.006
ECN: C-07431 – Rev. C, 06-Aug-07 DWG: 5934

RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single

Dimensions in mm/(Inches)

Disclaimer

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Documents / Resources

VISHAY SIA416DJ Siliconix Discrete Semiconductor [pdf] Owner's Manual SIA416DJ Siliconix Discrete Semiconductor, SIA416DJ, Siliconix Discrete Semiconductor, Discrete Semiconductor, Semiconductor

References

• User Manual