IRFP150 Vishay Siliconix Discrete Semiconductor

PRODUCT SUMMARY

PRODUCT SUMMARY
VDS (V)	100
RDS(on) (W)	VGS = 10 V	0.055
Qg (max.) (nC)	140
Qgs (nC)	29
Qgd (nC)	68
Configuration	Single

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Isolated central mounting hole
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912.

Note
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details.

DESCRIPTION

• Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
• The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

ORDERING INFORMATION
Package	TO-247AC
Lead (Pb)-free	IRFP150PbF

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER			SYMBOL	LIMIT	UNIT
Drain-source voltage			VDS	100	V
Gate-source voltage			VGS	± 20
Continuous drain current	VGS at 10 V	TC = 25 °C	ID	41	A
		TC = 100 °C		29
Pulsed drain current a			IDM	160
Linear derating factor				1.5	W/°C
Single pulse avalanche energy b			EAS	830	mJ
Repetitive avalanche current a			IAR	41	A
Repetitive avalanche energy a			EAR	19	mJ
Maximum power dissipation	TC = 25 °C		PD	230	W
Peak diode recovery dV/dtc			dV/dt	5.5	V/ns
Operating junction and storage temperature range			TJ, Tstg	-55 to +175	°C
Soldering recommendations (peak temperature)	for 10 s			300d
Mounting Torque	6-32 or M3 screw			10	lbf · in
				1.1	N · m

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
• b. VDD = 25 V, starting TJ = 25 °C, L = 740 μH, Rg = 25 Ω, IAS = 41 A (see fig. 12)
• c. ISD ≤ 41 A, dI/dt ≤ 300 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
• d. 1.6 mm from the case

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum junction-to-ambient	RthJA	–	40	°C/W
Case-to-sink, flat, greased surface	RthCS	0.24	–
Maximum junction-to-case (drain)	RthJC	–	0.65

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS					MIN.	TYP.	MAX.	UNIT
Static
Drain-source breakdown voltage	VDS	VGS = 0 V, ID = 250 μA					100	–	–	V
VDS temperature coefficient	DVDS/TJ	Reference to 25 °C, ID = 1 mA					–	0.14	–	V/°C
Gate-source threshold voltage	VGS(th)	VDS = VGS, ID = 250 μA					2.0	–	4.0	V
Gate-source leakage	IGSS	VGS = ± 20 V					–	–	± 100	nA
Zero gate voltage drain current	IDSS	VDS = 100 V, VGS = 0 V					–	–	25	μA
		VDS = 80 V, VGS = 0 V, TJ = 150 °C					–	–	250
Drain-source on-state resistance	RDS(on)	VGS = 10 V	ID = 25 A b				–	–	0.055	W
Forward transconductance	gfs	VDS = 25 V, ID = 25 A b					13	–	–	S
Dynamic
Input capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5					–	2800	–	pF
Output capacitance	Coss						–	1100	–
Reverse transfer capacitance	Crss						–	280	–
Total gate charge	Qg	VGS = 10 V	ID = 41 A, VDS = 80 V, See Fig. 6 and 13 b				–	–	140	nC
Gate-source charge	Qgs						–	–	29
Gate-drain charge	Qgd						–	–	68
Turn-on delay time	td(on)	VDD = 50 V, ID = 41 A, Rg = 6.2 W, RD = 1.2 W, see fig. 10 b					–	16	–	ns
Rise time	tr						–	120	–
Turn-off delay time	td(off)						–	60	–
Fall time	tf						–	81	–
Internal drain inductance	LD	Between lead,					–	5.0	–
		6 mm (0.25″) from the package and center of the die contact								nH
Internal source inductance	LS						–	13	–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	IS	MOSFET symbol					–	–	41
		showing the integral reverse p – n junction diode								A
Pulsed diode forward current a	ISM						–	–	160
Body diode voltage	VSD	TJ = 25 °C, IS = 41 A, VGS = 0 V b					–	–	2.5	V
Body diode reverse recovery time	trr	TJ = 25 °C, IF = 41 A, dI/dt = 100 A/μs b					–	220	330	ns
Body diode reverse recovery charge	Qrr						–	1.9	2.9	μC
Forward turn-on time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• e. Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
• f. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91203.

Package Information

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

	MILLIMETERS
DIM.	MIN.	NOM.	MAX.	NOTES
A	4.83	5.02	5.21
A1	2.29	2.41	2.55
A2	1.17	1.27	1.37
b	1.12	1.20	1.33
b1	1.12	1.20	1.28
b2	1.91	2.00	2.39	6
b3	1.91	2.00	2.34
b4	2.87	3.00	3.22	6, 8
b5	2.87	3.00	3.18
c	0.40	0.50	0.60	6
c1	0.40	0.50	0.56
D	20.40	20.55	20.70	4

D1	16.46	16.76	17.06	5
D2	0.56	0.66	0.76
E	15.50	15.70	15.87	4
E1	13.46	14.02	14.16	5
E2	4.52	4.91	5.49	3
e	5.46 BSC
L	14.90	15.15	15.40
L1	3.96	4.06	4.16	6
Ø P	3.56	3.61	3.65	7
Ø P1	7.19 ref.
Q	5.31	5.50	5.69
S	5.51 BSC

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total above b2 and b 4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

	MILLIMETERS
DIM.	MIN.	MAX.	NOTES
A	4.58	5.31
A1	2.21	2.59
A2	1.17	2.49
b	0.99	1.40
b1	0.99	1.35
b2	1.53	2.39
b3	1.65	2.37
b4	2.42	3.43
b5	2.59	3.38
c	0.38	0.86
c1	0.38	0.76
D	19.71	20.82
D1	13.08	–

D2	0.51	1.30
E	15.29	15.87
E1	13.72	–
e	5.46 BSC
Ø k	0.254
L	14.20	16.25
L1	3.71	4.29
Ø P	3.51	3.66
Ø P1	–	7.39
Q	5.31	5.69
R	4.52	5.49
S	5.51 BSC

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 with the exception of dimension c

VERSION 3: FACILITY CODE = N

	MILLIMETERS				MILLIMETERS
DIM.	MIN.	MAX.		DIM.	MIN.	MAX.
A	4.65	5.31		D2	0.51	1.35
A1	2.21	2.59		E	15.29	15.87
A2	1.17	1.37		E1	13.46	–
b	0.99	1.40		e	5.46 BSC
b1	0.99	1.35		k	0.254
b2	1.65	2.39		L	14.20	16.10
b3	1.65	2.34		L1	3.71	4.29
b4	2.59	3.43		N	7.62 BSC
b5	2.59	3.38		P	3.56	3.66
c	0.38	0.89		P1	–	7.39
c1	0.38	0.84		Q	5.31	5.69
D	19.71	20.70		R	4.52	5.49
D1	13.08	–		S	5.51 BSC
ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Legal Disclaimer Notice

Disclaimer
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Documents / Resources

VISHAY IRFP150 Vishay Siliconix Discrete Semiconductor [pdf] Instructions IRFP150 Vishay Siliconix Discrete Semiconductor, IRFP150, Vishay Siliconix Discrete Semiconductor, Siliconix Discrete Semiconductor, Discrete Semiconductor, Semiconductor

References

• User Manual