IRFPF50
Vishay Siliconix
www.vishay.com

Power MOSFET

PRODUCT SUMMARY
VDS On	900
RDS(on) (1-1)	Vas = 10 V	2.
Qg max.) (nC)	200
Qgs (nC)	24
Qgd (nC)	110
Configuration	Single

FEATURES

• Dynamic dV/dt rated
• Repetitive avalanche rated
• Isolated central mounting hole
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated  mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION
Package	TO-247AC
Lead (Pb)-free	IRFPF50PbF

ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C, unless otherwise noted)
PARAMETER			SYMBOL	LIMIT	UNIT
Drain-source voltage			VDS	900	V
Gate-source voltage			Vas	± 20
Continuous drain current	V35 at 10 V	Tc = 25 °C	ID	7.	A
		c = T 100 °C		4.
Pulsed drain current a			‘Dm	27
Linear derating factor				2.	Wit
Single pulse avalanche energy b			EAS	880	mJ
Repetitive avalanche current a			IAR	7.	A
Repetitive avalanche energy a			EAR	19	mJ
Maximum power dissipation	Tc = 25 °C		PD	190	W
Peak diode recovery dV/dt c			dV/dt	2.	V/ns
Operating junction and storage temperature range			Tj, Tstg	-55 to +150	°C
Soldering recommendations (peak temperature)	for 10 s			300 d
Mounting torque	6-32 or M3 screw			10	lbf .in
				1.	N .m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 6.7 A (see fig. 12)
c. ISD ≤ 6.7 A, dI/dt ≤ 130 A/μs, VDD ≤ 600, TJ ≤ 150 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum junction-to-ambient	RthJA		40	°C/W
Case-to-sink, flat, greased surface	Rthcs	0.24
Maximum junction-to-case (drain)	RthjC		0.65

SPECIFICATIONS (Tj = 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TW.	MAX.	UNIT
Static
Drain-source breakdown voltage	VPS	VGs = 0 V, ID = 250 pA		900	–	–	V
VDs temperature coefficient	AN/Dsiii	Reference to 25 °C, lc, = 1 mA		–	1.	–	V/°C
Gate-source threshold voltage	VG5(th)	VDs = VGS, ID = 250 pA		2.0	–	4.0	V
Gate-source leakage	IGss	VGs = ± 20 V			–	± 100	nA
Zero gate voltage drain current	IDSS	VDs = 900 V, VGs = 0 V				100	pA
		Vps = 720 V, VGs = 0 V, TJ = 125 °C				500
Drain-source on-state resistance	RDs(on)	VGs = 10 V	lo = 4.0 Ab			2.	Q
Forward transconductance	%	Vps = 100 v, lo = 4.0 Ab		5.		–	S
Dynamic
Input capacitance	Gas	Vss = 0 V, Vps = 25 V, f = 1.0 MHz, see fig. 5		–	2900	–	pF
Output capacitance	Coss				270	–
Reverse transfer capacitance	Gras				92	–
Total gate charge	Qg	VGs = 10 V	lo = 6.7 A, Vps = 360 V, see fig. 6 and 13b		–	200	nC
Gate-source charge	Ogs					24
Gate-drain charge	Ogd					110
Turn-on delay time	td(on)	VDD = 450 V, ID = 6.7 A , RG = 6.2 Q, RD = 67 0, see fig. 1 06			20		ns
Rise time	ti.
					34	–
Turn-off delay time	td(off)				130	–
Fall time	tf				37	–
Internal drain inductance	LD	Between lead, 6 mm (0.25′) from package and center of die contact			5.0	–	nH
Internal source inductance	Ls				13	–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	Is	MOSFET symbol showing the integral reverse p – n junction diode			–	7.	A
Pulsed diode forward current a	ISM				–	27
Body diode voltage	VS0	TJ = 25 °C, Is = 6.7 A, VGs = 0 Vb				2.	V
Body diode reverse recovery time	trr	TJ = 25 °C, IF= 6.7 A, dVdt = 100 A/psb			610	920	ns
Body diode reverse recovery charge	Qrr				3.	5.	pC
Forward turn-on time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by Ls and LS

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 2 – Typical Output Characteristics, TC = 150 °C

Fig. 3 – Typical Transfer Characteristics

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 – Typical Source-Drain Diode Forward Voltage

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 – Maximum Safe Operating Area

Fig. 9 – Maximum Drain Current vs. Case Temperature

Fig. 10 – Switching Time Test Circuit

Fig. 10 – Switching Time Test Circuit

Fig. 12 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 13 – Unclamped Inductive Test Circuit

Fig. 14 – Unclamped Inductive Waveforms

Fig. 15 – Maximum Avalanche Energy vs. Drain Current

Fig. 16 – Basic Gate Charge Waveform

Fig. 17 – Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

Driver gate drive

Note
a. VGS= 5 V for logic level devices
Fig. 18 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified  locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91251.

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

	MILLIMETERS
DIM.	MIN.	NOM.	MAX.	NOTES
A	4.83	5.02	5.21
A1	2.29	2.41	2.55
A2	1.17	1.27	1.37
b	1.12	1.20	1.33
b1	1.12	1.20	1.28
b2	1.91	2.00	2.39	6
b3	1.91	2.00	2.34
b4	2.87	3.00	3.22	6, 8
b5	2.87	3.00	3.18
c	0.40	0.50	0.60	6
c1	0.40	0.50	0.56
D	20.40	20.55	20.70	4

	MILLIMETERS
DIM.	MIN.	NOM.	MAX.	NOTES
D1	16.46	16.76	17.06	5
D2	0.56	0.66	0.76
E	15.50	15.70	15.87	4
E1	13.46	14.02	14.16	5
E2	4.52	4.91	5.49	3
e	5.46 BSC
L	14.90	15.15	15.40
L1	3.96	4.06	4.16	6
Ø P	3.56	3.61	3.65	7
Ø P1	7.19 ref.
Q	5.31	5.50	5.69
S	5.51 BSC

Notes

1. Package reference: JEDEC
2. TO247, variation AC
3. All dimensions are in mm
4. Slot required, notch may be rounded
5. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
6. Thermal pad contour optional with dimensions D1 and E1
7. Lead finish uncontrolled in L1
8. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
9. Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

Package Information

VERSION 2: FACILITY CODE = Y

	MILLIMETERS
DIM.	MIN.	MAX.	NOTES
A	4.58	5.31
A1	2.21	2.59
A2	1.17	2.49
b	0.99	1.40
b1	0.99	1.35
b2	1.53	2.39
b3	1.65	2.37
b4	2.42	3.43
b5	2.59	3.38
c	0.38	0.86
c1	0.38	0.76
D	19.71	20.82
D1	13.08	–

	MILLIMETERS
DIM.	MIN.	MAX.	NOTES
D2	0.51	1.30
E	15.29	15.87
E1	13.72	–
e	5.46 BSC
Ø k	0.254
L	14.20	16.25
L1	3.71	4.29
Ø P	3.51	3.66
Ø P1	–	7.39
Q	5.31	5.69
R	4.52	5.49
S	5.51 BSC

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

	MILLIMETERS
DIM.	MIN.	MAX.
A	4.65	5.31
A1	2.21	2.59
A2	1.17	1.37
b	0.99	1.40
b1	0.99	1.35
b2	1.65	2.39
b3	1.65	2.34
b4	2.59	3.43
b5	2.59	3.38
c	0.38	0.89
c1	0.38	0.84
D	19.71	20.70
D1	13.08	–

	MILLIMETERS
DIM.	MIN.	MAX.
D2	0.51	1.35
E	15.29	15.87
E1	13.46	–
e	5.46 BSC
k	0.254
L	14.20	16.10
L1	3.71	4.29
N	7.62 BSC
P	3.56	3.66
P1	–	7.39
Q	5.31	5.69
R	4.52	5.49
S	5.51 BSC

ECN: E22-0452-Rev. G, 31-Oct-2022
DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. Contour of slot optional
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Legal Disclaimer Notice

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet  or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay  disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including  warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular  application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer  application by the customer’s technical experts.
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Documents / Resources

VISHAY IRFPF50 Siliconix Power MOSFET [pdf] Instruction Manual IRFPF50, IRFPF50 Siliconix Power MOSFET, MOSFET, Power MOSFET, IRFPF50 Power MOSFET, Siliconix Power MOSFET

References

• User Manual