applications.no
vishay.com/doc?91000IRFPF50 MOSFETs | Vishay
Instruction Manual for VISHAY models including: IRFPF50, IRFPF50 Siliconix Power MOSFET, MOSFET, Power MOSFET, IRFPF50 Power MOSFET, Siliconix Power MOSFET
[Vishay] IRFPF50PBF 반도체 > TR/FET/IGBT > MOSFET (주)엘레파츠 - 엘레파츠
File Info : application/pdf, 11 Pages, 1.09MB
DocumentDocumentwww.vishay.com IRFPF50 Vishay Siliconix Power MOSFET D TO-247AC G S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V 1.6 200 24 110 Single FEATURES · Dynamic dV/dt rated · Repetitive avalanche rated · Isolated central mounting hole Available · Fast switching · Ease of paralleling · Simple drive requirements · Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free TO-247AC IRFPF50PbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) for 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 , IAS = 6.7 A (see fig. 12) c. ISD 6.7 A, dI/dt 130 A/s, VDD 600, TJ 150 °C d. 1.6 mm from case LIMIT 900 ± 20 6.7 4.2 27 1.5 880 6.7 19 190 1.5 -55 to +150 300 d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N · m S22-0057-Rev. C, 31-Jan-2022 1 Document Number: 91251 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com IRFPF50 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain) SYMBOL RthJA RthCS RthJC TYP. - 0.24 - MAX. 40 0.65 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 A Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 A VGS = ± 20 V VDS = 900 V, VGS = 0 V VDS = 720 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 4.0 Ab VDS = 100 V, ID = 4.0 Ab 900 - - V - 1.2 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 100 A - - 500 - - 1.6 4.9 - - S Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Internal drain inductance Internal source inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 2900 - - 270 - pF - 92 - VGS = 10 V ID = 6.7 A, VDS = 360 - V, - see fig. 6 and 13b - - 200 - 24 nC - 110 - 20 - VDD = 450 V, ID = 6.7 A , RG = 6.2 , RD = 67 , see fig. 10b - 34 - ns - 130 - - 37 - Between lead, 6 mm (0.25") from package and center of die contact D G S - 5.0 - nH - 13 - Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulsed diode forward current a IS MOSFET symbol showing the integral reverse ISM p - n junction diode D G S - - 6.7 A - - 27 Body diode voltage VSD TJ = 25 °C, IS = 6.7 A, VGS = 0 Vb - - 1.8 V Body diode reverse recovery time Body diode reverse recovery charge trr Qrr - TJ = 25 °C, IF = 6.7 A, dI/dt = 100 A/sb - 610 920 ns 3.2 4.8 C Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. S22-0057-Rev. C, 31-Jan-2022 2 Document Number: 91251 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) IRFPF50 Vishay Siliconix Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature S22-0057-Rev. C, 31-Jan-2022 3 Document Number: 91251 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com IRFPF50 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area S22-0057-Rev. C, 31-Jan-2022 4 Document Number: 91251 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com Fig. 9 - Maximum Drain Current vs. Case Temperature IRFPF50 Vishay Siliconix VDS VGS RG RD D.U.T. 10 V Pulse width 1 µs Duty factor 0.1 % +- VDD Fig. 10 - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 11 - Switching Time Waveforms Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S22-0057-Rev. C, 31-Jan-2022 5 Document Number: 91251 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com VDS Vary tp to obtain required IAS RG 10 V tp L D.U.T. IAS 0.01 + - VDD A Fig. 13 - Unclamped Inductive Test Circuit IRFPF50 Vishay Siliconix VDS VDS tp VDD IAS Fig. 14 - Unclamped Inductive Waveforms Fig. 15 - Maximum Avalanche Energy vs. Drain Current 10 V QGS VG QG QGD Charge Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 12 V 50 k 0.2 µF 0.3 µF + D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit S22-0057-Rev. C, 31-Jan-2022 6 Document Number: 91251 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com D.U.T. + - Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations · Low stray inductance · Ground plane · Low leakage inductance current transformer - - + IRFPF50 Vishay Siliconix Rg · dV/dt controlled by Rg + · Driver same type as D.U.T. · ISD controlled by duty factor "D" - VDD · D.U.T. - device under test Driver gate drive P.W. Period D = P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Body diode forward drop Inductor current Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91251. S22-0057-Rev. C, 31-Jan-2022 7 Document Number: 91251 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com Package Information Vishay Siliconix TO-247AC (High Voltage) VERSION 1: FACILITY CODE = 9 DIM. A A1 A2 b b1 b2 b3 b4 b5 c c1 D MILLIMETERS MIN. NOM. 4.83 5.02 2.29 2.41 1.17 1.27 1.12 1.20 1.12 1.20 1.91 2.00 1.91 2.00 2.87 3.00 2.87 3.00 0.40 0.50 0.40 0.50 20.40 20.55 MAX. 5.21 2.55 1.37 1.33 1.28 2.39 2.34 3.22 3.18 0.60 0.56 20.70 NOTES 6 6, 8 6 4 DIM. D1 D2 E E1 E2 e L L1 Ø P Ø P1 Q S MIN. 16.46 0.56 15.50 13.46 4.52 14.90 3.96 3.56 5.31 MILLIMETERS NOM. 16.76 0.66 15.70 14.02 4.91 5.46 BSC 15.15 4.06 3.61 7.19 ref. 5.50 5.51 BSC MAX. 17.06 0.76 15.87 14.16 5.49 15.40 4.16 3.65 5.69 NOTES 5 4 5 3 6 7 Notes (1) Package reference: JEDEC® TO247, variation AC (2) All dimensions are in mm (3) Slot required, notch may be rounded (4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body (5) Thermal pad contour optional with dimensions D1 and E1 (6) Lead finish uncontrolled in L1 (7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm (8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition Revision: 31-Oct-2022 1 Document Number: 91360 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com VERSION 2: FACILITY CODE = Y B 3 R/2 Q 4 E E/2 S 2 x R (2) D 12 3 5 L1 C L 2 x b2 3 x b 2x e b4 0.10 M C A M Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain See view B Package Information Vishay Siliconix A A2 A 4 D A 7 ØP Ø k M DBM D2 (Datum B) ØP1 4 D1 4 Thermal pad A C A1 D DE E CC View B Planting 4 E1 0.01 M D B M View A - A (b1, b3, b5) Base metal (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E DIM. A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.58 5.31 2.21 2.59 1.17 2.49 0.99 1.40 0.99 1.35 1.53 2.39 1.65 2.37 2.42 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.82 13.08 - NOTES DIM. D2 E E1 e Ø k L L1 Ø P Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 - 5.46 BSC 0.254 14.20 16.25 3.71 4.29 3.51 3.66 - 7.39 5.31 5.69 4.52 5.49 5.51 BSC NOTES Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 31-Oct-2022 2 Document Number: 91360 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com VERSION 3: FACILITY CODE = N B R/2 E N Q R S D Package Information Vishay Siliconix D2 A A P1 P A2 D c1 D1 K M DBM L1 C b2 b b4 e 0.10 M C A M L C A1 Base metal E1 0.01 M D B M b1, b3, b5 c Plating b, b2, b4 MILLIMETERS MILLIMETERS DIM. MIN. A 4.65 A1 2.21 A2 1.17 b 0.99 b1 0.99 b2 1.65 b3 1.65 b4 2.59 b5 2.59 c 0.38 c1 0.38 D 19.71 D1 13.08 ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971 MAX. 5.31 2.59 1.37 1.40 1.35 2.39 2.34 3.43 3.38 0.89 0.84 20.70 - DIM. D2 E E1 e k L L1 N P P1 Q R S MIN. 0.51 15.29 13.46 14.20 3.71 3.56 - 5.31 4.52 5.46 BSC 0.254 7.62 BSC 5.51 BSC MAX. 1.35 15.87 - 16.10 4.29 3.66 7.39 5.69 5.49 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") Revision: 31-Oct-2022 3 Document Number: 91360 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Downloaded from Arrow.com. Document Number: 91000