ON Semiconductor FDD9409L-F085 Channel Logic Level Power Trench
Specifications
- Model: FDD9409L-F085
- Voltage: 40V
- Current: 90A
- Size: 2.6 m
- Features:
- IG Typical RDS(on) = 2.1 m at VGS = 10V, ID = 80 A
- ES Typical Qg(tot) = 52 nC at VGS = 10V, ID = 80 A
- UIS Capability
- RoHS Compliant
- Qualified to AEC Q101
- Applications:
- Automotive Engine Control
- PowerTrain Management
- Solenoid and Motor Drivers
- Electronic Steering
- Integrated Starter/Alternator
- Distributed Power Architectures and VRM
- Primary Switch for 12V Systems
Safety Precautions
Before using the product, please read the safety precautions in the user manual to ensure safe operation.
Installation
- Ensure the power is turned off before installation.
- Connect the product according to the provided wiring diagram.
- Securely mount the product in a suitable location.
Features
- Typical RDS(on) = 2.1 at VGS = 10V, ID = 80 A
- Typical Qg(tot) = 52 nC at VGS = 10V, ID = 80 A
- UIS Capability
- RoHS Compliant
- Qualified to AEC Q101
Applications
- Automotive Engine Control
- PowerTrain Management
- Solenoid and Motor Drivers
- Electronic Steering
- Integrated Starter/Alternator
- Distributed Power Architectures and VRN
- Primary Switch for 12V Systems
MOSFET Maximum Ratings
T, = 25°C unless otherwise noted
| Symbol | Parameter | Ratings | Units | ||
| VDSS | Drain-to-Source Voltage | 40 | V | ||
| VGS | Gate-to-Source Voltage | ±20 | V | ||
| ID | Drain Current – Continuous (VGS=10) (Note 1) | TC = 25°C | 90 | A | |
| Pulsed Drain Current | TC = 25°C | See Figure 4 | |||
| EAS | Single Pulse Avalanche Energy | (Note 2) | 33.7 | mJ | |
| PD | Power Dissipation | 150 | W | ||
| Derate Above 25oC | 1 | W/oC | |||
| TJ, TSTG | Operating and Storage Temperature | -55 to + 175 | oC | ||
| RqJC | Thermal Resistance, Junction to Case | 1 | oC/W | ||
| RqJA | Maximum Thermal Resistance, Junction to Ambient | (Note 3) | 52 | oC/W | |
Notes:
- Current is limited by the bondwire configuration.
- Starting TJ = 25°C, L = 15uH, IAS = 67A, VDD = 40V during inductor charging ,and VDD = 0V during time in avalanche.
- ROJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while ROJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper.
Package Marking and Ordering Information
| Device Marking | Device | Package | Reel Size | Tape Width | Quantity |
| FDD9409L | FDD9409L-F085 | D-PAK(TO-252) | 13” | 16mm | 2500units |
Electrical Characteristics TJ = 25°C unless otherwise noted.
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
Off Characteristics
| BVDSS | Drain-to-Source Breakdown Voltage | ID = 250mA, VGS = 0V | 40 | – | – | V | |
| IDSS | Drain-to-Source Leakage Current | VDS=40V,
VGS = 0V |
TJ = 25oC | – | – | 1 | mA |
| TJ = 175oC (Note 4) | – | – | 1 | mA | |||
| IGSS | Gate-to-Source Leakage Current | VGS = ±20V | – | – | ±100 | nA | |
On Characteristics
| VGS(th) | Gate to Source Threshold Voltage | VGS = VDS, ID = 250mA | 1.0 | 1.8 | 3.0 | V | |
|
RDS(on) |
Drain to Source On Resistance |
ID = 80A, VGS= 4.5V | – | 3.0 | 4.4 | mW | |
| ID = 80A, VGS= 10V | TJ = 25oC | – | 2.1 | 2.6 | mW | ||
| TJ = 175 °C (Note 4) | – | 3.7 | 4.6 | mW | |||
Dynamic Characteristics
| Ciss | Input Capacitance | VDS = 20V, VGS = 0V,
f = 1MHz |
– | 3360 | – | pF | |
| Coss | Output Capacitance | – | 1080 | – | pF | ||
| Crss | Reverse Transfer Capacitance | – | 42 | – | pF | ||
| Rg | Gate Resistance | f = 1MHz | – | 2.2 | – | W | |
| Qg(ToT) | Total Gate Charge | VGS = 0 to 10V | VDD = 32V ID = 80A | – | 52 | 68 | nC |
| Qg(th) | Threshold Gate Charge | VGS = 0 to 2V | – | 7 | – | nC | |
| Qgs | Gate-to-Source Gate Charge | – | 11 | – | nC | ||
| Qgd | Gate-to-Drain “Miller“ Charge | – | 8 | – | nC | ||
Switching Characteristics
| ton | Turn-On Time |
VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6W |
– | – | 47 | ns |
| td(on) | Turn-On Delay | – | 10 | – | ns | |
| tr | Rise Time | – | 13 | – | ns | |
| td(off) | Turn-Off Delay | – | 36 | – | ns | |
| tf | Fall Time | – | 10 | – | ns | |
| toff | Turn-Off Time | – | – | 70 | ns |
Drain-Source Diode Characteristics
| VSD | Source-to-Drain Diode Voltage | ISD =80A, VGS = 0V | – | – | 1.25 | V |
| ISD = 40A, VGS = 0V | – | – | 1.2 | V | ||
| trr | Reverse-Recovery Time | IF = 80A, dISD/dt = 100A/ms VDD = 32V | – | 59 | 77 | ns |
| Qrr | Reverse-Recovery Charge | – | 57 | 74 | nC |
Note: The maximum value is specified by design at TJ = 175°C.The product is not tested under these conditions in production.
Typical Characteristics
- Normalized Power Dissipation vs. Case Temperature
- Maximum Continuous Drain Current vs. Case Temperature
- Normalized Maximum Transient Thermal Impedance
- Peak Current Capability
- Forward Bias Safe Operating Area
- Unclamped Inductive Switching Capability
- Transfer Characteristics
- Forward Diode Characteristics
- Saturation Characteristics
- Saturation Characteristics
- RDSoN VS. Gate Voltage
- Normalized Roson VS. Junction Temperature
- Normalized Gate Threshold Voltage vs. Temperature
- Normalized Drain to Source Breakdown Voltage vs. Junction Temperature
- Capacitance vs. Drain to Source Voltage
- Gate Charge vs. Gate to Source Voltage
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FAQs
Q: What is the maximum thermal resistance of the product?
A: The maximum thermal resistance, junction to ambient, is 52°C/W.
Q: What are the off characteristics of the product?
A: The drain-to-source breakdown voltage is 40V, and the drain-to-source leakage current is specified under given conditions.
Q: How do I determine the gate-to-source threshold voltage?
A: The gate-to-source threshold voltage can be found with the specified test conditions provided in the manual.
Documents / Resources
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ON Semiconductor FDD9409L-F085 Channel Logic Level Power Trench [pdf] Owner's Manual FDD9409L-F085 Channel Logic Level Power Trench, FDD9409L-F085, Channel Logic Level Power Trench, Logic Level Power Trench, Level Power Trench, Power Trench |
