Vishay IRFBC40A N-Channel Power MOSFET

Product Summary

Part Number: IRFBC40A

Package: TO-220AB

Product Type: N-Channel Power MOSFET

Key Specifications:

• Drain-Source Voltage (VDS): 600 V
• Drain-Source On-State Resistance (RDS(on)): 1.2 Ω (at VGS = 10 V)
• Maximum Gate Charge (Qg max.): 42 nC
• Continuous Drain Current (ID): 6.2 A (at TC = 25 °C)
• Configuration: Single

Features

• Low gate charge (Qg) results in simple drive requirements.
• Improved gate, avalanche, and dynamic dV/dt ruggedness.
• Fully characterized capacitance and avalanche voltage and current.
• Effective Coss specified.
• Material categorization information available at www.vishay.com/doc?99912.

Applications

• Switch mode power supply (SMPS)
• Uninterruptible power supply (UPS)
• High speed power switching

Typical SMPS Topologies: Single transistor forward.

Ordering Information

Package: TO-220AB

Lead (Pb)-free: IRFBC40APbF

Lead (Pb)-free and halogen-free: IRFBC40APbF-BE3

Electrical Characteristics

Absolute Maximum Ratings (TC = 25 °C, unless otherwise noted)

Thermal Resistance Ratings

Electrical Specifications (TJ = 25 °C, unless otherwise noted)

Static Characteristics

Dynamic Characteristics

Drain-Source Body Diode Characteristics

Typical Characteristics

The datasheet includes several graphs illustrating typical device performance:

• Figure 1 & 2: Typical Output Characteristics: These graphs show the relationship between drain-to-source current (ID) and drain-to-source voltage (VDS) for various gate-source voltages (VGS) at different junction temperatures (25 °C and 150 °C). They demonstrate how the MOSFET behaves in the saturation and linear regions.
• Figure 3: Typical Transfer Characteristics: This plot illustrates the drain current (ID) as a function of gate-source voltage (VGS) at a constant drain-source voltage (VDS = 50 V) and temperature (25 °C). It helps determine the gate threshold voltage (VGS(th)) and the transconductance (gfs).
• Figure 4: Normalized On-Resistance vs. Temperature: This graph shows how the drain-source on-resistance (RDS(on)) changes relative to its value at 25 °C as the junction temperature (TJ) varies. It highlights the increase in resistance at higher temperatures, particularly at a drain current of 6.2 A and gate-source voltage of 10 V.
• Figure 5: Typical Capacitance vs. Drain-to-Source Voltage: This figure displays the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) as functions of drain-source voltage (VDS) at a frequency of 1 MHz. It shows how these capacitances vary with the applied voltage.
• Figure 6: Typical Gate Charge vs. Gate-to-Source Voltage: This plot illustrates the total gate charge (Qg), gate-source charge (Qgs), and gate-drain charge (Qgd) as functions of gate-source voltage (VGS) under specific test conditions (ID = 6.2 A, VDS = 480 V).
• Figure 7: Typical Source-Drain Diode Forward Voltage: This graph shows the forward voltage drop (VSD) of the intrinsic body diode versus the source-drain current (ISD) at 25 °C.
• Figure 8: Maximum Safe Operating Area (SOA): This plot defines the safe operating limits for the MOSFET in terms of drain current (ID) versus drain-source voltage (VDS) for different pulse durations (10 μs, 100 μs, 1 ms, 10 ms) and case temperatures (25 °C, 150 °C). It indicates the maximum power dissipation capabilities under various conditions.
• Figure 9: Maximum Drain Current vs. Case Temperature: This graph shows the maximum continuous drain current (ID) that can be handled as the case temperature (TC) increases.
• Figure 10a & 10b: Switching Time Test Circuit and Waveforms: These illustrate the test setup and associated voltage and current waveforms for measuring switching parameters like turn-on delay (td(on)), rise time (tr), turn-off delay (td(off)), and fall time (tf).
• Figure 11: Maximum Effective Transient Thermal Impedance, Junction-to-Case: This plot shows the transient thermal impedance (ZthJC) as a function of rectangular pulse duration for various duty cycles, providing insight into the device's thermal response under pulsed operation.
• Figure 12a, 12b, 12c, 12d: Unclamped Inductive Test Circuit, Waveforms, Avalanche Energy, and Avalanche Voltage: These figures detail the test setup and results for avalanche characteristics, showing how avalanche energy (EAS) and avalanche voltage (VDSav) are affected by avalanche current (IAV) and junction temperature (TJ).
• Figure 13a & 13b: Basic Gate Charge Waveform and Test Circuit: These illustrate the concept of gate charge and the circuit used to measure it.
• Figure 14: Peak Diode Recovery dV/dt Test Circuit and Waveforms: This figure describes the test circuit and waveforms for measuring the peak diode recovery dV/dt, which is crucial for understanding switching behavior and potential parasitic oscillations.

Package Information (TO-220-1)

The TO-220AB package is a standard plastic package with three leads and a metal tab. Key dimensions are provided in millimeters and inches:

Note: M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM.

Legal Disclaimer

All product, product specifications, and data are subject to change without notice to improve reliability, function, or design. Vishay Intertechnology, Inc. and its affiliates disclaim all liability for errors, inaccuracies, or incompleteness in datasheets. Product suitability for specific applications must be validated by the customer. Vishay products are not designed for medical, life-saving, or life-sustaining applications. Customers using products in such applications do so at their own risk. For detailed terms and conditions, refer to the official Vishay website.