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Reliability Report

Report Title: Qualification of ADI Camas Wafer Fab 6um Bipolar Process for Non-Automotive Products

Report Number: 24360

Revision: B

Date: 28 July 2025

Summary

This report documents the reliability qualification requirements for the release of the 6 um Bipolar wafer fabrication process for non-automotive products at Analog Devices Camas Wafer Fabrication Facility. The products listed below were selected to cover the technology being released.

The OP07 has a very low input offset voltage (75 uV maximum for OP07E) that is obtained by trimming at the wafer stage. These low offset voltages generally eliminate any need for external nulling.

The REF43 is a low power precision reference providing a stable 2.5 V output independent of variations in supply voltage, load conditions or ambient temperature. It is suitable as a reference level for 8-, 10- and 12-bit data acquisition systems, or wherever a stable, known voltage is required.

Die/Fab Product Characteristics

Table 1: Die/Fab Product Characteristics – 6um Bipolar

Product CharacteristicsProduct(s) to be qualified
Generic/Root Part #OP07REF43
Die Id6WOP77YV*01 A6WREF43RV*01 A
Die Size (mm)1.43 x 2.352.13 x 1.65
Wafer Fabrication SiteADI CamasADI Camas
Wafer Fabrication Process6 um Bipolar6 um Bipolar
Die SubstrateSiSi
Metallization / # LayersAlCu(0.5%)/1AlCu(1.0%)/1
PolyimideNoYes
Passivationdoped-oxide/SiNdoped-oxide/SiN

Die/Fab Test Results

Table 2: Die/Fab Test Results – 6um Bipolar at ADI Camas

Test NameAEC#SpecConditionsGeneric/Root Part #Lot #Fail/SS
High Temperature Operating Life (HTOL)¹B1JESD22-A108135°C to 150°C, 1,000 HoursOP07Q21307.1.HO1_RES0/77
REF43Q21263.1.HO1_RES0/77
Q21263.2.HO2_RES0/77
Q21263.3.HO3_RES0/77
High Temperature Storage Life (HTSL)A6JESD22-A103150°C, 1,000 HoursOP07Q21307.1.HS1_RES0/77
REF43Q21263.1.HS1_RES0/77
Highly Accelerated Temperature and Humidity Stress Test (HAST)¹A2JESD22-A110130°C, 85% RH, 33.3 psia, Biased, 96 HoursOP07Q21307.1.HA2_RES0/77
REF43Q21263.1.HA1_RES0/77
Q21263.2.HA2_RES0/77
Q21263.3.HA3_RES0/77
Unbiased HAST (UHST)¹A3JESD22-A118130°C, 85% RH, 33.3 psia, 96 HoursOP07Q21307.1.UH1_RES0/77
REF43Q21263.1.UH1_RES0/77
Q21263.2.UH2_RES0/77
Q21263.3.UH3_RES0/77
Temperature Cycling (TC)¹A4JESD22-A104-65°C to +150°C, 500 CyclesOP07Q21307.1.TC1_RES0/77
REF43Q21263.1.TC1_RES0/77
Q21263.2.TC2_RES0/77
Q21263.3.TC3_RES0/77

¹ These samples were subjected to preconditioning at MSL 1 with 3x reflow peak temp of 260°C prior to the start of the stress test.

Package/Assembly Product Characteristics

Table 3.1: Package/Assembly Product Characteristics - SOIC_N at AMKOR (AP1)

Product CharacteristicsProduct(s) to be qualified
Generic/Root Part #OP07
Package8-SOIC_N
Body Size (mm)5.00 x 4.00 x 1.50
Assembly LocationAMKOR (AP1)
MSL/Peak Reflow Temperature (°C)1 / 260
Mold CompoundSumitomo G600
Die Attach/Underfill/TIMAblestik 84-1 LMISR4 conductive
Leadframe MaterialCopper
Lead Finish100Sn
Wire Bond Material/Diameter (mils)2N Gold / 1.20

Package/Assembly Product Characteristics

Table 3.2: Package/Assembly Test Results - SOIC_N at ASE (AET)

Product CharacteristicsProduct(s) to be qualified
Generic/Root Part #REF43
Package8-SOIC_N
Body Size (mm)5.00 x 4.00 x 1.75
Assembly LocationASE (AET)
MSL/Peak Reflow Temperature (°C)1 / 260
Mold CompoundHitachi CEL 9240HF10AK
Die Attach/Underfill/TIMHitachi EN4900GC conductive
Leadframe MaterialCopper
Lead Finish100Sn
Wire Bond Material/Diameter (mils)Tanaka GPG 2N Gold / 1.20

Package/Assembly Test Results

Table 4: Package/Assembly Test Results - SOIC_N

Test NameSpecConditionsGeneric/Root Part #Lot #Fail/SS
High Temperature Storage Life (HTSL)JESD22-A103150°C, 1,000 HoursOP07Q21307.1.HS1_RES0/77
REF43Q21263.1.HS1_RES0/77
Solder Heat Resistance (SHR)¹J-STD-020MSL-1OP07Q21307.1.SH1_RES0/11
REF43Q21263.1.SH1_RES0/11
Q21263.2.SH2_RES0/11
Q21263.3.SH3_RES0/11
Highly Accelerated Temperature and Humidity Stress Test (HAST)¹JESD22-A110130°C, 85% RH, 33.3 psia, Biased, 96 HoursOP07Q21307.1.HA2_RES0/77
REF43Q21263.1.HA1_RES0/77
Q21263.2.HA2_RES0/77
Q21263.3.HA3_RES0/77
Unbiased HAST (UHST)¹JESD22-A118130°C, 85% RH, 33.3 psia, 96 HoursOP07Q21307.1.UH1_RES0/77
REF43Q21263.1.UH1_RES0/77
Q21263.2.UH2_RES0/77
Q21263.3.UH3_RES0/77
Temperature Cycling (TC)¹JESD22-A104-65°C to +150°C, 500 CyclesOP07Q21307.1.TC1_RES0/77
REF43Q21263.1.TC1_RES0/77
Q21263.2.TC2_RES0/77
Q21263.3.TC3_RES0/77

¹ These samples were subjected to preconditioning at MSL 1 with 3x reflow peak temp of 260°C prior to the start of the stress test.

ESD and Latch-Up Test Results

Table 5: ESD Test Result

ESD ModelGeneric/Root Part #PackageESD Test SpecRC NetworkHighest Pass LevelClass
FICDMOP078-SOIC_NJS-0021 Ohm, Cpkg+1250VC3
FICDMREF438-SOIC_NJS-0021 Ohm, Cpkg+1000VC3
HBMOP078-SOIC_NJS-0011.5 kOhm, 100 pF+500V1B
HBMREF438-SOIC_NJS-0011.5 kOhm, 100 pF+500V1B

Table 6: Latch Up Test Result

LU Test SpecGeneric/Root Part #Passing CurrentPassing Over-VoltageTemperature (TA)Class
JESD78OP07+200mA, -200mA+27V25°CI
JESD78REF43+200mA, -200mA+60V25°CI

Approvals

Reliability Engineer: Ronnel Alota

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ADI PCN 25 0151 Rev - Qualification of ADI Camas Wafer Fab 6um BIPOLAR Process Microsoft Word for Microsoft 365

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