Infineon 600V CoolMOST™ E6 Power Transistor

IPW60R190E6, IPP60R190E6, IPA60R190E6

1 Description

CoolMOST™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOST™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

The document includes diagrams illustrating package outlines for TO-247, TO-220, and TO-220 FullPAK, along with their dimensions in millimeters and inches. It also presents various characteristic graphs, such as power dissipation, transient thermal impedance, safe operating area, output characteristics, transfer characteristics, gate charge, avalanche energy, breakdown voltage, capacitances, Coss stored energy, and reverse diode characteristics. Test circuits for diode characteristics, switching times, and unclamped inductive load are also depicted.

Features

Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)

Applications

PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.

Table 1 Key Performance Parameters

Parameter	Value	Unit
VDS @ Tj max	650	V
RDS(on), max	0.19	Ω
Qg,typ	63	nC
ID, pulse	59	A
Eoss @ 400V	5.2	μJ
Body diode di/dt	500	A/μs

Table 1 Type / Ordering Code

Type / Ordering Code	Package	Marking	Related Links
IPW60R190E6	PG-TO 247	6R190E6	see Appendix A
IPP60R190E6	PG-TO 220
IPA60R190E6	PG-TO 220 FullPAK

2 Maximum ratings

at Tj = 25°C, unless otherwise specified

Table 2 Maximum ratings

Parameter	Symbol	Values	Unit	Note / Test Condition
Min.	Typ.	Max.
Continuous drain current¹⁾	ID		20.2	A	Tc = 25°C
Pulsed drain current²⁾	ID,pulse		12.8	A	Tc = 100°C
Avalanche energy, single pulse	EAS		418	mJ	ID = 3.4A, VDD = 50V (see table 11)
Avalanche energy, repetitive	EAR		0.63	mJ	ID = 3.4A, VDD = 50V
Avalanche current, repetitive	IAR		3.4	A
MOSFET dv/dt ruggedness	dv/dt		50	V/ns	VDS = 0 ... 480V
Gate source voltage	VGS	-20	20	V	static
		-30	30	V	AC (f > 1 Hz)
Power dissipation (non FullPAK) TO-247, TO-220	Ptot		151.0	W	Tc = 25°C
Power dissipation (FullPAK) TO-220 FP	Ptot		34.0	W	Tc = 25°C
Operating and storage temperature	Tj, Tstg	-55	150	°C
Mounting torque (non FullPAK) TO-247, TO-220			60	Ncm	M3 and M3.5 screws
Mounting torque (FullPAK) TO-220 FP			50	Ncm	M2.5 screws
Continuous diode forward current	Is		17.5	A	Tc = 25°C
Diode pulse current	IS, pulse		59	A	Tc = 25°C
Reverse diode dv/dt³⁾	dv/dt		15	V/ns	VDS = 0 ... 400V, ISD ≤ ID, Tj = 25°C (see table 9)
Maximum diode commutation speed	dif/dt		500	A/μs
Insulation withstand voltage for TO-220FP	Viso	-	2500	V	Vrms, Tc=25°C, t=1min

¹⁾ Limited by Tj max. Maximum duty cycle D=0.75
²⁾ Pulse width limited by Tj max
³⁾ Identical low side and high side switch with identical RG

3 Thermal characteristics

Table 3 Thermal characteristics TO-247, TO-220

Parameter	Symbol	Values	Unit	Note / Test Condition
Min.	Typ.	Max.
Thermal resistance, junction - case	RthJC		0.83	°C/W
Thermal resistance, junction - ambient	RthJA		62	°C/W	leaded
Soldering temperature, wavesoldering only allowed at leads	Tsold		260	°C	1.6 mm (0.063 in.) from case for 10s

Table 4 Thermal characteristics TO-220 FP

Parameter	Symbol	Values	Unit	Note / Test Condition
Min.	Typ.	Max.
Thermal resistance, junction - case	RthJC		3.7	°C/W
Thermal resistance, junction - ambient	RthJA		80	°C/W	leaded
Soldering temperature, wavesoldering only allowed at leads	Tsold		260	°C	1.6 mm (0.063 in.) from case for 10s

4 Electrical characteristics

at Tj = 25°C, unless otherwise specified

Table 5 Static characteristics

Parameter	Symbol	Values	Unit	Note / Test Condition
Min.	Typ.	Max.
Drain-source breakdown voltage	V(BR)DSS	600		V	VGS = 0V, ID = 0.25mA
Gate threshold voltage	VGS(th)	2.5	3	3.5	V	VDS = VGS, ID = 0.63mA
Zero gate voltage drain current	IDSS		1	μA	VDS = 600V, VGS = 0V, Tj = 25°C
			10		VDS = 600V, VGS = 0V, Tj = 150°C
Gate-source leakage current	IGSS		100	nA	VGS = 20V, VDS = 0V
Drain-source on-state resistance	RDS(on)	0.170	0.19	Ω	VGS = 10V, ID = 9.5A, Tj = 25°C
		0.440			VGS = 10V, ID = 9.5A, Tj = 150°C
Gate resistance	RG		6	Ω	f = 1MHz, open drain

Table 6 Dynamic characteristics

Parameter	Symbol	Values	Unit	Note / Test Condition
Min.	Typ.	Max.
Input capacitance	Ciss		1400	pF	VGS = 0V, VDS = 100V, f = 1MHz
Output capacitance	Coss		85	pF	VGS = 0V, VDS = 0 ... 480V
Effective output capacitance, energy related¹⁾	Co(er)		56	pF
Effective output capacitance, time related²⁾	Co(tr)		266	pF	ID = constant, VGS = OV, VDS = 0 ... 480V
Turn-on delay time	td(on)		12	ns	VDD = 400V, VGS = 13V, ID = 9.5A, RG = 3.4Ω (see table 10)
Rise time	tr		10	ns
Turn-off delay time	td(off)		90	ns
Fall time	tf		8	ns

Table 7 Gate charge characteristics

Parameter	Symbol	Values	Unit	Note / Test Condition
Min.	Typ.	Max.
Gate to source charge	Qgs		7.6	nC	VDD = 480V, ID = 9.5A, VGS = 0 to 10V
Gate to drain charge	Qgd		32	nC
Gate charge total	Qg		63	nC
Gate plateau voltage	Vplateau		5.4	V

¹⁾ Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
²⁾ Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS

Table 8 Reverse diode characteristics

Parameter	Symbol	Values	Unit	Note / Test Condition
Min.	Typ.	Max.
Diode forward voltage	VSD		0.9	V	VGS = 0V, IF = 9.5A, Tj = 25°C
Reverse recovery time	trr		430	ns	VR = 400V, IF = 9.5A, die/dt = 100A/μs (see table 9)
Reverse recovery charge	Qrr		6.9	μC
Peak reverse recovery current	I rrm		30	A

5 Electrical characteristics diagrams

Power dissipation (Non FullPAK)

A line graph showing Power Dissipation (Ptot) in Watts on the Y-axis versus Case Temperature (Tc) in °C on the X-axis. The curve starts at approximately 175W at 0°C and decreases linearly to 0W at 150°C.

Power dissipation (FullPAK)

A line graph showing Power Dissipation (Ptot) in Watts on the Y-axis versus Case Temperature (Tc) in °C on the X-axis. The curve starts at approximately 40W at 0°C and decreases linearly to 0W at 150°C.

Max. transient thermal impedance (Non FullPAK)

A log-log graph showing Junction-to-Case Thermal Impedance (ZthJC) in K/W on the Y-axis versus pulse duration (tp) in seconds on the X-axis. Multiple curves are shown for different duty cycles (D=tp/T), ranging from 0.01 to 0.5, plus a 'single pulse' curve. The impedance starts high for short durations and levels off at higher durations.

Max. transient thermal impedance (FullPAK)

Safe operating area Tc=25°C (Non FullPAK)

A log-log graph showing Drain Current (ID) in Amperes on the Y-axis versus Drain-Source Voltage (VDS) in Volts on the X-axis. Curves are shown for different pulse durations (tp), including DC, 10ms, 1ms, 100μs, 10μs, and 1μs. The safe operating area is the region below these curves.

Safe operating area Tc=25°C (FullPAK)

Safe operating area Tc=80°C (Non FullPAK)

Safe operating area Tc=80°C (FullPAK)

Typ. output characteristics Tc=25°C

A graph showing Drain Current (ID) in Amperes on the Y-axis versus Drain-Source Voltage (VDS) in Volts on the X-axis. Multiple curves are plotted for different Gate-Source Voltages (VGS), ranging from 4.5V to 20V. The current increases with VDS and VGS.

Typ. output characteristics Tc=125°C

Typ. drain-source on-state resistance

A graph showing Drain-Source On-State Resistance (RDS(on)) in Ohms on the Y-axis versus Drain Current (ID) in Amperes on the X-axis. Curves are plotted for different Gate-Source Voltages (VGS) at Tj=125°C. Resistance generally increases with current and decreases with VGS.

Drain-source on-state resistance

A graph showing Drain-Source On-State Resistance (RDS(on)) in Ohms on the Y-axis versus Junction Temperature (Tj) in °C on the X-axis. A single curve is shown for ID=9.5 A and VGS=10V, indicating that RDS(on) increases with temperature.

Typ. transfer characteristics

A graph showing Drain Current (ID) in Amperes on the Y-axis versus Gate-Source Voltage (VGS) in Volts on the X-axis. Two curves are plotted for Tj=25°C and Tj=150°C, showing the typical transfer characteristic where current increases with VGS.

Typ. gate charge

A graph showing Gate-Source Voltage (VGS) in Volts on the Y-axis versus Gate Charge (Qgate) in nC on the X-axis. Curves are shown for VDD=120V and VDD=480V, illustrating the relationship between applied voltage and charge required to drive the gate.

Avalanche energy

A graph showing Avalanche Energy (EAS) in mJ on the Y-axis versus Junction Temperature (Tj) in °C on the X-axis. The curve shows that avalanche energy decreases as temperature increases.

Drain-source breakdown voltage

A graph showing Drain-Source Breakdown Voltage (VBR(DSS)) in Volts on the Y-axis versus Junction Temperature (Tj) in °C on the X-axis. The curve shows a slight increase in breakdown voltage with increasing temperature.

Typ. capacitances

A log-log graph showing Capacitance (C) in pF on the Y-axis versus Drain-Source Voltage (VDS) in Volts on the X-axis. Curves are plotted for Ciss, Coss, and Crss, showing how these capacitances vary with VDS at VGS=0V and f=1MHz.

Typ. Coss stored energy

A graph showing Stored Energy (Eoss) in μJ on the Y-axis versus Drain-Source Voltage (VDS) in Volts on the X-axis. The curve shows the stored energy in Coss as a function of VDS.

Forward characteristics of reverse diode

A log-linear graph showing Forward Current (IF) in Amperes on the Y-axis versus Diode Forward Voltage (VSD) in Volts on the X-axis. Two curves are plotted for Tj=25°C and Tj=125°C, illustrating the forward voltage drop of the intrinsic diode.

6 Test Circuits

Table 9 Diode characteristics

Diagrams show the test circuit for diode characteristics and the corresponding diode recovery waveform. The waveform illustrates parameters like VDS(peak), VDS, IF, trr, ts, dlF/dt, Qrr, and Irrm.

Table 10 Switching times

Diagrams show the switching times test circuit for an inductive load and the corresponding switching times waveform. The waveform illustrates parameters like VDS, VGS, td(on), tr, ton, td(off), tf, and toff.

Table 11 Unclamped inductive load

Diagrams show the unclamped inductive load test circuit and the corresponding unclamped inductive waveform. The waveform illustrates parameters like VDS, ID, and V(BR)DS.

7 Package Outlines

Figure 1 Outline PG-TO 247, dimensions in mm/inches

Diagrams show the outline of the PG-TO 247 package with dimensions labeled A through S. A table provides the minimum and maximum dimensions in millimeters and inches for each labeled part.

Figure 2 Outline PG-TO 220, dimensions in mm/inches

Diagrams show the outline of the PG-TO 220 package with dimensions labeled A through Q. A table provides the minimum and maximum dimensions in millimeters and inches for each labeled part.

Figure 3 Outline PG-TO 220 FullPAK, dimensions in mm/inches

Diagrams show the outline of the PG-TO 220 FullPAK package with dimensions labeled A through Q. A table provides the minimum and maximum dimensions in millimeters and inches for each labeled part.

8 Appendix A

Table 12 Related Links

IFX CoolMOS Webpage: www.infineon.com
IFX Design Tools: www.infineon.com

Revision History

Revision: 2017-10-17, Rev. 2.4

Previous Revision

Revision	Date	Subjects (major changes since last revision)
2.4	2017-10-17	Rev. 2.1 to Rev. 2.3: Package drawing modifications. Rev. 2.4: Added Full PAK insulation voltage rating in Table 2 on page 3. Revised transfer characteristics graph on Page 10

Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOST™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™, ISOFACE™, ISOPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRICT™, SIEGET™, SIPMOST™, SmartLEWIS™, SOLID FLASH™, SPOCTM, TEMPFET™, thinQ!, TRENCHSTOP™, TriCore™.

Trademarks updated August 2015

Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.

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