IKB30N65ES5 High Speed Switching Series 5th Generation
TRENCHSTOP™ 5 high speed soft switching IGBT copacked with full rated current RAPID 1 fast and soft anti parallel diode
Features and Benefits
- High speed S5 technology offering
- High speed smooth switching device for hard & soft switching
- Very Low VCEsat, 1.35V at nominal current
- 650V breakdown voltage
- Low QG
- IGBT copacked with full rated current RAPID 1 fast antiparallel diode
- Maximum junction temperature 175°C
- ✅ Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models: www.infineon.com/igbt/
Potential Applications
- Energy Generation
- Solar String Inverter
- Solar Micro Inverter
- Industrial Power Supplies
- Industrial SMPS
- Industrial UPS
- Metal Treatment
- Welding
- Energy Distribution
- Energy Storage
- Infrastructure
- Charge
- Charger
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Key Performance and Package Parameters
| Type | VCE | IC | VCEsat, Tvj=25°C | Tvjmax | Marking | Package |
| IKB30N65ES5 | 650V | 30A | 1.35V | 175°C | K30EES5 | PG-TO263-3 |
Maximum Ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage, Tvj ≥ 25°C | VCE | 650 | V |
| DC collector current, limited by Tvjmax Tc=25°C Tc=100°C | IC | 62.0 39.5 | A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 120.0 | A |
| Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175°C, tp = 1μs | - | 120.0 | A |
| Diode forward current, limited by Tvjmax Tc=25°C value limited by bondwire Tc=100°C | IF | 40.0 39.5 | A |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 120.0 | A |
| Gate-emitter voltage | VGE | ±20 | V |
| Transient Gate-emitter voltage (tp ≤ 10µs, D < 0.010) | +30 | V | |
| Power dissipation Tc=25°C | Ptot | 188.0 | W |
| Power dissipation Tc=100°C | 94.0 | ||
| Operating junction temperature | Tvj | -40...+175 | °C |
| Storage temperature | Tstg | -55...+150 | °C |
| Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) | 260 | °C |
Thermal Resistance
| Parameter | Symbol | Conditions | Value | Unit | ||
| min. | typ. | max. | ||||
| IGBT thermal resistance, junction - case | Rth(j-c) | - | - | 0.80 | K/W | |
| Diode thermal resistance, junction - case | Rth(j-c) | - | - | 1.00 | K/W | |
| Thermal resistance, min. footprint junction - ambient | Rth(j-a) | - | - | 65 | K/W | |
| Thermal resistance, 6cm² Cu on PCB junction - ambient | Rth(j-a) | - | - | 40 | K/W | |
Electrical Characteristics
Static Characteristic (at Tvj = 25°C, unless otherwise specified)
| Parameter | Symbol | Conditions | Value | Unit | ||
| min. | typ. | max. | ||||
| Collector-emitter breakdown voltage | V(BR)CES | VGE=0V, Ic=0.20mA | 650 | - | - | V |
| Collector-emitter saturation voltage | VCEsat | VGE=15.0V, Ic=30.0A | - | 1.35 | 1.70 | V |
| Tvj=25°C | - | 1.50 | - | |||
| Tvj=125°C | - | 1.60 | - | |||
| Diode forward voltage | VF | Tvj=175°C | - | - | - | V |
| VGE=0V, IF=30.0A | - | 1.45 | 1.70 | |||
| Tvj=25°C | - | 1.42 | - | |||
| Tvj=125°C | - | 1.39 | - | |||
| Tvj=175°C | - | - | - | |||
| Gate-emitter threshold voltage | VGE(th) | Ic=0.30mA, VCE=VGE | 3.2 | 4.0 | 4.8 | V |
| Zero gate voltage collector current | ICES | VCE=650V, VGE=0V Tvj=25°C | - | - | 50 | µA |
| Tvj=175°C | - | - | 1400 | - | ||
| Gate-emitter leakage current | IGES | VCE=0V, VGE=20V | - | - | 100 | nA |
| Transconductance | gfs | VCE=20V, Ic=30.0A | - | 42.0 | - | S |
Dynamic Characteristic (at Tvj = 25°C, unless otherwise specified)
| Parameter | Symbol | Conditions | Value | Unit | ||
| min. | typ. | max. | ||||
| Input capacitance | Cies | VCE=25V, VGE=0V, f=1MHz | - | 1800 | - | pF |
| Output capacitance | Coes | - | 55 | - | ||
| Reverse transfer capacitance | Cres | - | 7 | - | ||
| Gate charge | QG | VCC=520V, Ic=30.0A, VGE=15V | - | 70.0 | - | nC |
| Internal emitter inductance measured 5mm (0.197 in.) from case | LE | - | 7.0 | - | nH | |
Switching Characteristic, Inductive Load (IGBT at Tvj = 25°C)
| Parameter | Symbol | Conditions | Value | Unit | ||
| min. | typ. | max. | ||||
| Turn-on delay time | td(on) | Tvj=25°C, VCC=400V, Ic=30.0A, VGE=0.0/15.0V, RG(on)=13.0Ω, RG(off)=13.0Ω, Lσ=30nH, Cσ=30pF Lσ, Cσ from Fig. E Energy losses include "tail" and diode reverse recovery. | - | 17 | - | ns |
| Rise time | tr | - | 12 | - | ns | |
| Turn-off delay time | td(off) | - | 124 | - | ns | |
| Fall time | tf | - | 30 | - | ns | |
| Turn-on energy | Eon | - | 0.56 | - | mJ | |
| Turn-off energy | Eoff | - | 0.32 | - | mJ | |
| Total switching energy | Ets | - | 0.88 | - | mJ | |
Switching Characteristic, Inductive Load (IGBT at Tvj = 150°C)
| Parameter | Symbol | Conditions | Value | Unit | |||
| min. | typ. | max. | |||||
| IGBT Characteristic, at Tvj = 150°C | Turn-on delay time | td(on) | Tvj=150°C, VCC=400V, Ic=30.0A, VGE=0.0/15.0V, RG(on)=13.0Ω, RG(off)=13.0Ω, Lσ=30nH, Cσ=30pF Lσ, Cσ from Fig. E Energy losses include "tail" and diode reverse recovery. | - | 17 | - | ns |
| Rise time | tr | - | 13 | - | ns | ||
| Turn-off delay time | td(off) | - | 149 | - | ns | ||
| Fall time | tf | - | 55 | - | ns | ||
| Turn-on energy | Eon | - | 0.77 | - | mJ | ||
| Turn-off energy | Eoff | - | 0.56 | - | mJ | ||
| Total switching energy | Ets | - | 1.33 | - | mJ | ||
| IGBT Characteristic, at Tvj = 150°C (Ic=15A) | Turn-on delay time | td(on) | Tvj=150°C, VCC=400V, Ic=15.0A, VGE=0.0/15.0V, RG(on)=13.0Ω, RG(off)=13.0Ω, Lσ=30nH, Cσ=30pF Lσ, Cσ from Fig. E Energy losses include "tail" and diode reverse recovery. | - | 16 | - | ns |
| Rise time | tr | - | 7 | - | ns | ||
| Turn-off delay time | td(off) | - | 179 | - | ns | ||
| Fall time | tf | - | 54 | - | ns | ||
| Turn-on energy | Eon | - | 0.41 | - | mJ | ||
| Turn-off energy | Eoff | - | 0.31 | - | mJ | ||
| Total switching energy | Ets | - | 0.72 | - | mJ | ||
Diode Characteristic, at Tvj = 25°C
| Parameter | Symbol | Conditions | Value | Unit | |||
| min. | typ. | max. | |||||
| Diode reverse recovery time | trr | Tvj=25°C, VR=400V, IF=30.0A, diF/dt=1200A/µs | - | 75 | - | ns | |
| Diode reverse recovery charge | Qrr | - | 0.83 | - | µC | ||
| Diode peak reverse recovery current | Irrm | - | 18.0 | - | A | ||
| Diode peak rate of fall of reverse recovery current during to | dirr/dt | - | -900 | - | A/µs | ||
| Diode reverse recovery time | trr | Tvj=25°C, VR=400V, IF=15.0A, diF/dt=1900A/µs | - | 52 | - | ns | |
| Diode reverse recovery charge | Qrr | - | 0.60 | - | µC | ||
| Diode peak reverse recovery current | Irrm | - | 18.5 | - | A | ||
| Diode peak rate of fall of reverse recovery current during to | dirr/dt | - | -1315 | - | A/µs | ||
Diode Characteristic, at Tvj = 150°C
| Parameter | Symbol | Conditions | Value | Unit | |||
| min. | typ. | max. | |||||
| Diode reverse recovery time | trr | Tvj=150°C, VR=400V, IF=30.0A, diF/dt=1200A/µs | - | 110 | - | ns | |
| Diode reverse recovery charge | Qrr | - | 1.75 | - | µC | ||
| Diode peak reverse recovery current | Irrm | - | 26.5 | - | A | ||
| Diode peak rate of fall of reverse recovery current during to | dirr/dt | - | -1000 | - | A/µs | ||
| Diode reverse recovery time | trr | Tvj=150°C, VR=400V, IF=15.0A, diF/dt=1900A/µs | - | 78 | - | ns | |
| Diode reverse recovery charge | Qrr | - | 1.25 | - | µC | ||
| Diode peak reverse recovery current | Irrm | - | 26.2 | - | A | ||
| Diode peak rate of fall of reverse recovery current during to | dirr/dt | - | -1200 | - | A/µs | ||
Electrical Characteristics Diagrams
Figure 1. Power dissipation as a function of case temperature (Tvj≤175°C)
Graph showing Power Dissipation (Ptot) in Watts on the Y-axis versus Case Temperature (Tc) in °C on the X-axis. The line shows a decreasing trend, indicating that power dissipation capability reduces as case temperature increases.
Figure 2. Collector current as a function of case temperature (VGE≥15V, Tvj≤175°C)
Graph showing Collector Current (Ic) in Amperes on the Y-axis versus Case Temperature (Tc) in °C on the X-axis, for various Gate-Emitter Voltages (VGE) from 15V to 20V. The curves show that collector current capability decreases as case temperature increases.
Figure 3. Typical output characteristic (Tvj=25°C)
Graph showing typical output characteristics. Collector Current (Ic) in Amperes is plotted on the Y-axis against Collector-Emitter Voltage (VCE) in Volts on the X-axis. Multiple curves represent different Gate-Emitter Voltages (VGE), showing the IGBT's output characteristics at 25°C.
Figure 4. Typical output characteristic (Tvj=175°C)
Graph showing typical output characteristics. Collector Current (Ic) in Amperes is plotted on the Y-axis against Collector-Emitter Voltage (VCE) in Volts on the X-axis. Multiple curves represent different Gate-Emitter Voltages (VGE), showing the IGBT's output characteristics at 175°C.
Figure 5. Typical transfer characteristic (VCE=20V)
Graph showing typical transfer characteristic. Collector Current (Ic) in Amperes is plotted on the Y-axis against Gate-Emitter Voltage (VGE) in Volts on the X-axis, for two junction temperatures (Tvj=25°C and Tvj=150°C) at VCE=20V.
Figure 6. Typical collector-emitter saturation voltage as a function of junction temperature (VGE=15V)
Graph showing typical collector-emitter saturation voltage (VCEsat) in Volts on the Y-axis versus Junction Temperature (Tvj) in °C on the X-axis, for different collector currents (Ic=15A, 30A, 60A) at VGE=15V.
Figure 7. Typical switching times as a function of collector current
Graph showing typical switching times (td(on), tr, td(off), tf) in nanoseconds (ns) on the Y-axis (logarithmic scale) versus Collector Current (Ic) in Amperes on the X-axis. This data is for an inductive load at Tvj=150°C, VCE=400V, VGE=0/15V, RGon=13Ω, RGoff=13Ω, dynamic test circuit in Figure E.
Figure 8. Typical switching times as a function of gate resistance
Graph showing typical switching times (td(on), tr, td(off), tf) in nanoseconds (ns) on the Y-axis (logarithmic scale) versus Gate Resistance (RG) in Ohms on the X-axis. This data is for an inductive load at Tvj=150°C, VCE=400V, VGE=0/15V, Ic=30A, dynamic test circuit in Figure E.
Figure 9. Typical switching times as a function of junction temperature
Graph showing typical switching times (td(on), tr, td(off), tf) in nanoseconds (ns) on the Y-axis (logarithmic scale) versus Junction Temperature (Tvj) in °C on the X-axis. This data is for an inductive load at VCE=400V, VGE=0/15V, Ic=30A, RGon=13Ω, RGoff=13Ω, dynamic test circuit in Figure E.
Figure 10. Gate-emitter threshold voltage as a function of junction temperature
Graph showing typical Gate-Emitter Threshold Voltage (VGE(th)) in Volts on the Y-axis versus Junction Temperature (Tvj) in °C on the X-axis, for Ic=0.3mA.
Figure 11. Typical switching energy losses as a function of collector current
Graph showing typical switching energy losses (Eon, Eoff, Ets) in millijoules (mJ) on the Y-axis versus Collector Current (Ic) in Amperes on the X-axis. This data is for an inductive load at Tvj=150°C, VCE=400V, VGE=150/V, RGon=13Ω, RGoff=13Ω, dynamic test circuit in Figure E.
Figure 12. Typical switching energy losses as a function of gate resistance
Graph showing typical switching energy losses (Eon, Eoff, Ets) in millijoules (mJ) on the Y-axis versus Gate Resistance (RG) in Ohms on the X-axis. This data is for an inductive load at Tvj=150°C, VCE=400V, VGE=0/15V, Ic=30A, dynamic test circuit in Figure E.
Figure 13. Typical switching energy losses as a function of junction temperature
Graph showing typical switching energy losses (Eon, Eoff, Ets) in millijoules (mJ) on the Y-axis versus Junction Temperature (Tvj) in °C on the X-axis. This data is for an inductive load at VCE=400V, VGE=0/15V, Ic=30A, RGon=13Ω, RGoff=13Ω, dynamic test circuit in Figure E.
Figure 14. Typical switching energy losses as a function of collector emitter voltage
Graph showing typical switching energy losses (Eon, Eoff, Ets) in millijoules (mJ) on the Y-axis versus Collector-Emitter Voltage (VCE) in Volts on the X-axis. This data is for an inductive load at Tvj=150°C, VGE=0/15V, Ic=30A, RGon=13Ω, RGoff=13Ω, dynamic test circuit in Figure E.
Figure 15. Typical gate charge (Ic=30A)
Graph showing typical gate charge (QGE) in nanocoulombs (nC) on the Y-axis versus Gate-Emitter Voltage (VGE) in Volts on the X-axis, for Ic=30A and two VCC values (130V and 520V).
Figure 16. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f=1MHz)
Graph showing typical capacitance (Cies, Coes, Cres) in picofarads (pF) on the Y-axis (logarithmic scale) versus Collector-Emitter Voltage (VCE) in Volts on the X-axis, for VGE=0V and f=1MHz.
Figure 17. IGBT transient thermal impedance (D=tp/T)
Graph showing transient thermal impedance (Zth(j-c)) in K/W on the Y-axis (logarithmic scale) versus pulse width (tp) in seconds on the X-axis. Curves are shown for different duty cycles (D), illustrating the thermal response of the IGBT to pulsed power.
Figure 18. Diode transient thermal impedance as a function of pulse width (D=tp/T)
Graph showing transient thermal impedance (Zth(j-c)) in K/W on the Y-axis (logarithmic scale) versus pulse width (tp) in seconds on the X-axis. Curves are shown for different duty cycles (D), illustrating the thermal response of the Diode to pulsed power.
Figure 19. Typical reverse recovery time as a function of diode current slope (VR=400V)
Graph showing typical reverse recovery time (trr) in nanoseconds (ns) on the Y-axis versus diode current slope (diF/dt) in A/µs on the X-axis. Data is shown for two junction temperatures (Tvj=25°C and Tvj=150°C) at IF=30A and VR=400V.
Figure 20. Typical reverse recovery charge as a function of diode current slope (VR=400V)
Graph showing typical reverse recovery charge (Qrr) in microcoulombs (µC) on the Y-axis versus diode current slope (diF/dt) in A/µs on the X-axis. Data is shown for two junction temperatures (Tvj=25°C and Tvj=150°C) at IF=30A and VR=400V.
Figure 21. Typical reverse recovery current as a function of diode current slope (VR=400V)
Graph showing typical reverse recovery current (Irr) in Amperes (A) on the Y-axis versus diode current slope (diF/dt) in A/µs on the X-axis. Data is shown for two junction temperatures (Tvj=25°C and Tvj=150°C) at IF=30A and VR=400V.
Figure 22. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V)
Graph showing typical diode peak rate of fall of reverse recovery current (diIrr/dt) in A/µs on the Y-axis versus diode current slope (diF/dt) in A/µs on the X-axis. Data is shown for two junction temperatures (Tvj=25°C and Tvj=150°C) at IF=30A and VR=400V.
Figure 23. Typical diode forward current as a function of forward voltage
Graph showing typical diode forward current (IF) in Amperes on the Y-axis versus forward voltage (VF) in Volts on the X-axis. Curves are shown for two junction temperatures (Tvj=25°C and Tvj=150°C) at IF=30A.
Figure 24. Typical diode forward voltage as a function of junction temperature
Graph showing typical diode forward voltage (VF) in Volts on the Y-axis versus junction temperature (Tvj) in °C on the X-axis, for different forward currents (IF=15A, 30A, 60A).
Package Drawing PG-TO263-3
Diagram of the PG-TO263-3 package showing its physical dimensions and pin configurations. A table provides detailed dimensions for various parts of the package (A, A1, b, b2, c, c2, D, D1, E, E1, e, e1, N, H, L, L1, L2) in both millimeters and inches. A footprint diagram is also included.
Testing Conditions
Figure A. Definition of switching times
Diagram illustrating the definition of switching times (td(on), tr, td(off), tf) for an IGBT. It shows idealized waveforms for Gate-Emitter Voltage (VGE(t)) and Collector Current (Ic(t)) over time (t), indicating the specific points used to measure these times.
Figure B. Definition of switching losses
Diagram illustrating the definition of switching losses (Eon, Eoff) for an IGBT. It shows idealized waveforms for Collector-Emitter Voltage (VCE(t)) and Collector Current (Ic(t)) over time (t), with shaded areas representing the energy loss integrals.
Figure C. Definition of diode switching characteristics
Diagram illustrating the definition of diode switching characteristics. It shows idealized waveforms for Diode Current (I) and Voltage (V) over time (t), indicating parameters like reverse recovery time (trr), charge (Qrr), peak current (Irrm), and current slope (diF/dt).
Figure D. Thermal equivalent circuit
Diagram of a thermal equivalent circuit. It shows a representation of thermal resistances (r1, r2, rn) and capacitances (C1, C2) connected to a power source p(t) and a temperature sink Tc, modeling heat dissipation.
Figure E. Dynamic test circuit
Diagram of a dynamic test circuit used for switching measurements. It includes the Device Under Test (DUT) for both Diode and IGBT, gate resistance (RG), parasitic inductance (Lσ), parasitic capacitance (Cσ), and a relief capacitor (Cr) for Zero Voltage Turn-off (ZVT) switching.
Revision History
| Revision | Date | Subjects (major changes since last revision) |
| 2.1 | 2018-01-11 | Final data sheet |
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