Introduction
Infineon's CoolGaN™ G5 is a high-performance gallium nitride (GaN) transistor designed for 650 V power conversion applications. This transistor offers enhanced power density, reduced system Bill of Materials (BOM) costs, and enables miniaturized form factors. Manufactured using advanced 200 mm wafer technology, it ensures high product quality and narrow production tolerances, making it ideal for a wide array of applications from consumer electronics to industrial systems.
Key Features and Benefits
- Enhancement mode transistor for efficient operation.
- Ultra-fast switching capabilities with no reverse-recovery charge.
- Capable of reverse conduction and features low gate and output charge.
- Superior commutation ruggedness and 2 kV HBM ESD standards.
- Normally OFF technology ensures safe operation and enables precise power delivery control.
- Improves system efficiency and reliability, providing robust performance under challenging conditions.
Potential Applications
The CoolGaN™ G5 transistor is well-suited for industrial, telecom, and datacenter Switched-Mode Power Supplies (SMPS). It is particularly effective in half-bridge topologies for Power Factor Correction (PFC) and high-frequency LLC converters, as well as in chargers and adapters.
Product Validation
This product has been fully qualified according to JEDEC standards for industrial applications.
Key Performance Parameters
The datasheet provides detailed key performance parameters, including maximum voltage ratings, on-state resistance, and various charge characteristics, crucial for designing efficient power conversion circuits.
Further Information
For more details, including related links to the CoolGaN™ GaN 650 V webpage, reliability white paper, gate driver application note, and applications information, please refer to Appendix A of this document.
