VISHAY IRFP460B D Series Power MOSFET
Product Information
- The IRFP460B and SiHG460B are D Series Power MOSFETs manufactured by Vishay Siliconix. These MOSFETs are N-Channel devices designed for high voltage applications.
- The IRFP460B has a drain-source voltage (VDS) rating of 550 V and a gate-source voltage (VGS) rating of 10 V. It comes in a TO-247AC package with lead (Pb)-free and halogen-free options.
- The SiHG460B has the same specifications as the IRFP460B and is also available in a TO-247AC package.
Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 550 | V |
| Gate-Source Voltage | VGS | 10 | V |
| Pulsed Drain Current | ID | 170 | A |
| Maximum Power Dissipation | PD | 300 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
Product Usage Instructions
Installation
- Ensure that the power supply is turned off and disconnected before installation.
- Select an appropriate heat sink for the MOSFET to dissipate heat effectively.
- Mount the MOSFET securely on the heat sink using thermal paste or a thermal pad.
- Connect the drain, gate, and source pins of the MOSFET to the appropriate circuitry according to your application requirements.
- Double-check all connections and ensure that there are no short circuits before applying power.
Operation
Once the MOSFET is properly installed, follow these guidelines for its operation:
- Ensure that the gate-source voltage (VGS) does not exceed the specified maximum value of 10 V.
- Maintain the drain-source voltage (VDS) within the specified range of up to 550 V.
- Do not exceed the maximum pulsed drain current (ID) rating of 170 A.
- Monitor the temperature of the MOSFET during operation and ensure it stays within the specified operating temperature range of -55 to +150 °C.
FAQ
Q: Are the IRFP460B and SiHG460B lead (Pb)-free?
A: Yes, both models are available in lead (Pb)-free options. The IRFP460B is also available in a lead (Pb)-free and halogen-free version.
Q: What is the maximum power dissipation of the MOSFET?
A: The maximum power dissipation (PD) is 300 W.
Q: Can I use these MOSFETs in high voltage applications?
A: Yes, these MOSFETs are designed for high voltage applications with a drain-source voltage (VDS) rating of 550 V.
Q: What is the recommended operating temperature range for the MOSFET?
A: The recommended operating temperature range is -55 to +150 °C.
D Series Power MOSFET
| PRODUCT SUMMARY | ||
| VDS (V) at TJ max. | 550 | |
| RDS(on) max. at 25 °C (W) | VGS = 10 V | 0.25 |
| Qg max. (nC) | 170 | |
| Qgs (nC) | 14 | |
| Qgd (nC) | 28 | |
| Configuration | Single | |
FEATURES
- Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
- Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM):
- Fast Switching
- Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912 - Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
APPLICATIONS
- Consumer Electronics
Displays (LCD or Plasma TV) - Server and Telecom Power Supplies
SMPS - Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- SMPS
Power Factor Correction (PFC)
| ORDERING INFORMATION | |
| Package | TO-247AC |
| Lead (Pb)-free | IRFP460BPbF |
| Lead (Pb)-free and Halogen-free | SiHG460B-GE3 |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-Source Voltage | VDS | 500 |
V |
||
| Gate-Source Voltage | VGS | ± 20 | |||
| Gate-Source Voltage AC (f > 1 Hz) | 30 | ||||
| Continuous Drain Current (TJ = 150 °C) | VGS at 10 V | TC = 25 °C | ID | 20 |
A |
| TC = 100 °C | 13 | ||||
| Pulsed Drain Currenta | IDM | 62 | |||
| Linear Derating Factor | 2.2 | W/°C | |||
| Single Pulse Avalanche Energyb | EAS | 281 | mJ | ||
| Maximum Power Dissipation | PD | 278 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | – 55 to + 150 | °C | ||
| Drain-Source Voltage Slope | TJ = 125 °C | dV/dt | 24 | V/ns | |
| Reverse Diode dV/dtd | 0.36 | ||||
| Soldering Recommendations (Peak Temperature) | for 10 s | 300c | °C | ||
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature.
- b. VDD = 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A.
- c. 1.6 mm from case.
- d. ISD ID, starting TJ = 25 °C.
Vishay Siliconix
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum Junction-to-Ambient | RthJA | – | 40 | °C/W |
| Maximum Junction-to-Case (Drain) | RthJC | – | 0.45 | |
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 μA | 500 | – | – | V | |
| VDS Temperature Coefficient | DVDS/TJ | Reference to 25 °C, ID = 250 μA | – | 0.56 | – | V/°C | |
| Gate-Source Threshold Voltage (N) | VGS(th) | VDS = VGS, ID = 250 μA | 2 | – | 4 | V | |
| Gate-Source Leakage | IGSS | VGS = ± 20 V | – | – | ± 100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 500 V, VGS = 0 V | – | – | 1 | μA | |
| VDS = 400 V, VGS = 0 V, TJ = 125 °C | – | – | 10 | ||||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V | ID = 10 A | – | 0.2 | 0.25 | W |
| Forward Transconductance | gfs | VDS = 50 V, ID = 10 A | – | 12 | – | S | |
| Dynamic | |||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 100 V,
f = 1 MHz |
– | 3094 | – |
pF |
|
| Output Capacitance | Coss | – | 152 | – | |||
| Reverse Transfer Capacitance | Crss | – | 13 | – | |||
| Effective output capacitance, energy relateda | Co(er) |
VGS = 0 V, VDS = 0 V to 400 V |
– | 131 | – | ||
| Effective output capacitance, time relatedb | Co(tr) | – | 189 | – | |||
| Total Gate Charge | Qg |
VGS = 10 V |
ID = 10 A, VDS = 400 V |
– | 85 | 170 |
nC |
| Gate-Source Charge | Qgs | – | 14 | – | |||
| Gate-Drain Charge | Qgd | – | 28 | – | |||
| Turn-On Delay Time | td(on) |
VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 9.1 W |
– | 24 | 50 |
ns |
|
| Rise Time | tr | – | 31 | 62 | |||
| Turn-Off Delay Time | td(off) | – | 117 | 176 | |||
| Fall Time | tf | – | 56 | 112 | |||
| Gate Input Resistance | Rg | f = 1 MHz, open drain | – | 1.8 | – | W | |
| Drain-Source Body Diode Characteristics | |||||||
| Continuous Source-Drain Diode Current | IS | MOSFET symbol showing the
integral reverse p – n junction diode |
– | – | 20 |
A |
|
| Pulsed Diode Forward Current | ISM | – | – | 80 | |||
| Diode Forward Voltage | VSD | TJ = 25 °C, IS = 10 A, VGS = 0 V | – | – | 1.2 | V | |
| Reverse Recovery Time | trr |
TJ = 25 °C, IF = IS = 10 A, dI/dt = 100 A/μs, VR = 20 V |
– | 437 | – | ns | |
| Reverse Recovery Charge | Qrr | – | 5.9 | – | μC | ||
| Reverse Recovery Current | IRRM | – | 25 | – | A | ||
Notes
- a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
- b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
| MILLIMETERS | ||||
| DIM. | MIN. | NOM. | MAX. | NOTES |
| A | 4.83 | 5.02 | 5.21 | |
| A1 | 2.29 | 2.41 | 2.55 | |
| A2 | 1.17 | 1.27 | 1.37 | |
| b | 1.12 | 1.20 | 1.33 | |
| b1 | 1.12 | 1.20 | 1.28 | |
| b2 | 1.91 | 2.00 | 2.39 | 6 |
| b3 | 1.91 | 2.00 | 2.34 | |
| b4 | 2.87 | 3.00 | 3.22 | 6, 8 |
| b5 | 2.87 | 3.00 | 3.18 | |
| c | 0.40 | 0.50 | 0.60 | 6 |
| c1 | 0.40 | 0.50 | 0.56 | |
| D | 20.40 | 20.55 | 20.70 | 4 |
| MILLIMETERS | ||||
| DIM. | MIN. | NOM. | MAX. | NOTES |
| D1 | 16.46 | 16.76 | 17.06 | 5 |
| D2 | 0.56 | 0.66 | 0.76 | |
| E | 15.50 | 15.70 | 15.87 | 4 |
| E1 | 13.46 | 14.02 | 14.16 | 5 |
| E2 | 4.52 | 4.91 | 5.49 | 3 |
| e | 5.46 BSC | |||
| L | 14.90 | 15.15 | 15.40 | |
| L1 | 3.96 | 4.06 | 4.16 | 6 |
| Ø P | 3.56 | 3.61 | 3.65 | 7 |
| Ø P1 | 7.19 ref. | |||
| Q | 5.31 | 5.50 | 5.69 | |
| S | 5.51 BSC | |||
Notes
- Package reference: JEDEC® TO247, variation AC
- All dimensions are in mm
- Slot required, notch may be rounded
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
- Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition
VERSION 2: FACILITY CODE = Y
| MILLIMETERS | |||
| DIM. | MIN. | MAX. | NOTES |
| A | 4.58 | 5.31 | |
| A1 | 2.21 | 2.59 | |
| A2 | 1.17 | 2.49 | |
| b | 0.99 | 1.40 | |
| b1 | 0.99 | 1.35 | |
| b2 | 1.53 | 2.39 | |
| b3 | 1.65 | 2.37 | |
| b4 | 2.42 | 3.43 | |
| b5 | 2.59 | 3.38 | |
| c | 0.38 | 0.86 | |
| c1 | 0.38 | 0.76 | |
| D | 19.71 | 20.82 | |
| D1 | 13.08 | – | |
| MILLIMETERS | |||
| DIM. | MIN. | MAX. | NOTES |
| D2 | 0.51 | 1.30 | |
| E | 15.29 | 15.87 | |
| E1 | 13.72 | – | |
| e | 5.46 BSC | ||
| Ø k | 0.254 | ||
| L | 14.20 | 16.25 | |
| L1 | 3.71 | 4.29 | |
| Ø P | 3.51 | 3.66 | |
| Ø P1 | – | 7.39 | |
| Q | 5.31 | 5.69 | |
| R | 4.52 | 5.49 | |
| S | 5.51 BSC | ||
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
- Outline conforms to JEDEC outline TO-247 with exception of dimension c
VERSION 3: FACILITY CODE = N
| MILLIMETERS | MILLIMETERS | |||||
| DIM. | MIN. | MAX. | DIM. | MIN. | MAX. | |
| A | 4.65 | 5.31 | D2 | 0.51 | 1.35 | |
| A1 | 2.21 | 2.59 | E | 15.29 | 15.87 | |
| A2 | 1.17 | 1.37 | E1 | 13.46 | – | |
| b | 0.99 | 1.40 | e | 5.46 BSC | ||
| b1 | 0.99 | 1.35 | k | 0.254 | ||
| b2 | 1.65 | 2.39 | L | 14.20 | 16.10 | |
| b3 | 1.65 | 2.34 | L1 | 3.71 | 4.29 | |
| b4 | 2.59 | 3.43 | N | 7.62 BSC | ||
| b5 | 2.59 | 3.38 | P | 3.56 | 3.66 | |
| c | 0.38 | 0.89 | P1 | – | 7.39 | |
| c1 | 0.38 | 0.84 | Q | 5.31 | 5.69 | |
| D | 19.71 | 20.70 | R | 4.52 | 5.49 | |
| D1 | 13.08 | – | S | 5.51 BSC | ||
| ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971 | ||||||
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Disclaimer
- ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
- Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
- Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
- Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limite d to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience an d for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay o f any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. - Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
- No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
- © 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Documents / Resources
 |
VISHAY IRFP460B D Series Power MOSFET [pdf] User Manual IRFP460B D Series Power MOSFET, IRFP460B, D Series Power MOSFET, Power MOSFET, MOSFET |