VISHAY IRFP360 Siliconix Power Mosfet Owner’s Manual

Contents hide
1 Product Information
2 FEATURES
3 DESCRIPTION
4 TO-247AC (High Voltage)
5 Legal Disclaimer Notice
6 Disclaimer
7 Documents / Resources
7.1 References
8 Related Posts

Product Information

Power MOSFET 

TO-247AC

N-Channel MOSFET

PRODUCT SUMMARY
VDS (V) 400
RDS(on) (W) VGS = 10 V 0.20
Qg (max.) (nC) 210
Qgs (nC) 30
Qgd (nC) 110
Configuration Single

FEATURES

  • Dynamic dV/dt rated
  • Repetitive avalanche rated
  • Isolated central mounting hole
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free IRFP360PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 400 V
Gate-source voltage VGS ± 20
Continuous drain current VGS at 10 V TC = 25 °C ID 23 A
TC = 100 °C 14
Pulsed drain currenta IDM 92
Linear derating factor 2.2 W/°C
Single pulse avalanche energy b EAS 1200 mJ
Repetitive avalanche current a IAR 23 A
Repetitive avalanche energy a EAR 28 mJ
Maximum power dissipation TC = 25 °C PD 280 W
Peak diode recovery dV/dt c dV/dt 4.0 V/ns
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Soldering recommendations (peak temperature) for 10 s 300d
Mounting torque 6-32 or M3 screw 10 lbf · in
1.1 N · m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 4.0 mH, Rg = 25 Ω, IAS = 23 A (see fig. 12)
c. ISD ≤ 23 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA – 40 °C/W
Case-to-sink, flat, greased surface RthCS 0.24 –
Maximum junction-to-case (drain) RthJC – 0.45
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 400 – – V
VDS temperature coefficient DVDS/TJ Reference to 25 °C, ID = 1 mA – 0.56 – V/°C
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 – 4.0 V
Gate-source leakage IGSS VGS = ± 20 V – – ± 100 nA
Zero gate voltage drain current IDSS VDS = 400 V, VGS = 0 V – – 25 μA
VDS = 320 V, VGS = 0 V, TJ = 125 °C – – 250
Drain-source on-state resistance RDS(on) VGS = 10 V ID = 14 A b – – 0.20 W
Forward transconductance gfs VDS = 50 V, ID = 14 A b 14 – – S
Dynamic
Input capacitance Ciss VGS = 0 V, VDS = 25 V,f = 1.0 MHz, see fig. 5 – 4500 – pF
Output capacitance Coss – 1100 –
Reverse transfer capacitance Crss – 490 –
Total gate charge Qg VGS = 10 V ID = 23 A, VDS = 320 V,see fig. 6 and 13 b – – 210 nC
Gate-source charge Qgs – – 30
Gate-drain charge Qgd – – 110
Turn-on delay time td(on) VDD = 200 V, ID = 23 A ,Rg = 4.3 W, RD = 8.3 W, see fig. 10 b – 18 – ns
Rise time tr – 79 –
Turn-off delay time td(off) – 100 –
Fall time tf – 67 –
Internal drain inductance LD Between lead,6 mm (0.25″) from package and center of die contact
 – 5.0 –
nH
Internal source inductance LS – 13 –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol showing the integral; reversep – n junction diode
 – – 23
A
Pulsed diode forward current a ISM – – 92
Body diode voltage VSD TJ = 25 °C, IS = 23 A, VGS = 0 V b – – 1.8 V
Body diode reverse recovery time trr TJ = 25 °C, IF = 23 A, dI/dt = 100 A/μs b – 420 630 ns
Body diode reverse recovery charge Qrr – 5.6 8.4 μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

  1. Fig. 1 – Typical Output Characteristics, TC = 25 °C

  2. Fig. 2 – Typical Output Characteristics, TC = 150 °C

  3. Fig. 3 – Typical Transfer Characteristics

  4. Fig. 4 – Normalized On-Resistance vs. Temperature

  5. Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

  6. Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

  7. Fig. 7 – Typical Source-Drain Diode Forward Voltage

  8. Fig. 8 – Maximum Safe Operating Area

  9. Fig. 9 – Maximum Drain Current vs. Case Temperature

  10. Fig. 10a – Switching Time Test Circuit

    Fig. 10b – Switching Time Waveforms

  11. Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

  12. Fig. 12a – Unclamped Inductive Test Circuit

    Fig. 12b – Unclamped Inductive Waveforms

    Fig. 12c – Maximum Avalanche Energy vs. Drain Current

  13. Fig. 13a – Basic Gate Charge Waveform

    Fig. 13b – Gate Charge Test Circuit

    Peak Diode Recovery dV/dt Test Circuit

  14. Fig. 14 – For N-Channel

    Note
    a. VGS = 5 V for logic level devices

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

MILLIMETERS
DIM. MIN. NOM. MAX. NOTES
A 4.83 5.02 5.21
A1 2.29 2.41 2.55
A2 1.17 1.27 1.37
b 1.12 1.20 1.33
b1 1.12 1.20 1.28
b2 1.91 2.00 2.39 6
b3 1.91 2.00 2.34
b4 2.87 3.00 3.22 6, 8
b5 2.87 3.00 3.18
c 0.40 0.50 0.60 6
c1 0.40 0.50 0.56
D 20.40 20.55 20.70 4

MILLIMETERS
DIM. MIN. NOM. MAX. NOTES
D1 16.46 16.76 17.06 5
D2 0.56 0.66 0.76
E 15.50 15.70 15.87 4
E1 13.46 14.02 14.16 5
E2 4.52 4.91 5.49 3
e 5.46 BSC
L 14.90 15.15 15.40
L1 3.96 4.06 4.16 6
Ø P 3.56 3.61 3.65 7
Ø P1 7.19 ref.
Q 5.31 5.50 5.69
S 5.51 BSC

Notes

  1. Package reference: JEDEC® TO247, variation AC
  2. All dimensions are in mm
  3. Slot required, notch may be rounded
  4. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
  5. Thermal pad contour optional with dimensions D1 and E1
  6. Lead finish uncontrolled in L1
  7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
  8. Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

Lead Assignments

  1. Gate
  2. Drain
  3. Source
  4. Drain
MILLIMETERS
DIM. MIN. MAX. NOTES
A 4.58 5.31
A1 2.21 2.59
A2 1.17 2.49
b 0.99 1.40
b1 0.99 1.35
b2 1.53 2.39
b3 1.65 2.37
b4 2.42 3.43
b5 2.59 3.38
c 0.38 0.86
c1 0.38 0.76
D 19.71 20.82
D1 13.08 –


View B

MILLIMETERS
DIM. MIN. MAX. NOTES
D2 0.51 1.30
E 15.29 15.87
E1 13.72 –
e 5.46 BSC
Ø k 0.254
L 14.20 16.25
L1 3.71 4.29
Ø P 3.51 3.66
Ø P1 – 7.39
Q 5.31 5.69
R 4.52 5.49
S 5.51 BSC

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994
  2. Contour of slot optional
  3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
  4. Thermal pad contour optional with dimensions D1 and E1
  5. Lead finish uncontrolled in L1
  6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
  7. Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

MILLIMETERS
DIM. MIN. MAX.
A 4.65 5.31
A1 2.21 2.59
A2 1.17 1.37
b 0.99 1.40
b1 0.99 1.35
b2 1.65 2.39
b3 1.65 2.34
b4 2.59 3.43
b5 2.59 3.38
c 0.38 0.89
c1 0.38 0.84
D 19.71 20.70
D1 13.08 –

MILLIMETERS
DIM. MIN. MAX.
D2 0.51 1.35
E 15.29 15.87
E1 13.46 –
e 5.46 BSC
k 0.254
L 14.20 16.10
L1 3.71 4.29
N 7.62 BSC
P 3.56 3.66
P1 – 7.39
Q 5.31 5.69
R 4.52 5.49
S 5.51 BSC

ECN: E22-0452-Rev. G, 31-Oct-2022
DWG: 5971

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994
  2. Contour of slot optional
  3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
  4. Thermal pad contour optional with dimensions D1 and E1
  5. Lead finish uncontrolled in L1
  6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Legal Disclaimer Notice

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.

Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third party website.

Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.

Vishay products are not designed for use in life-saving or life-sustaining applications or any application in which the failure of the Vishay product could result in personal injury or death unless specifically qualified in writing by Vishay. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2025 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED 

Revision: 01-Jan-2025 1 Document Number: 91000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Downloaded from Arrow.com.

Revision: 31-Oct-2022 3 Document Number: 91360
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Documents / Resources

VISHAY IRFP360 Siliconix Power Mosfet [pdf] Owner's Manual
IRFP360PBF, IRFP360 Siliconix Power Mosfet, IRFP360, Siliconix Power Mosfet, Power Mosfet, Mosfet

References

Related Posts

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