VISHAY IRF830B D Series Power MOSFET
FEATURES
- Optimal design
- Low area specific on-resistance
- Low input capacitance (Ciss)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
- Optimal efficiency and operation
- Low cost
- Simple gate drive circuitry
- Low figure-of-merit (FOM): Ron x Qg
- Fast switching
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Consumer electronics
- Displays (LCD or plasma TV)
- Server and telecom power supplies
- SMPS
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
| PRODUCT SUMMARY | ||
| VDS (V) at TJ max. | 550 | |
| RDS(on) max. (Ù) at 25 °C | VGS = 10 V | 1.5 |
| Qg max. (nC) | 20 | |
| Qgs (nC) | 3 | |
| Qgd (nC) | 5 | |
| Configuration | Single | |
| ORDERING INFORMATION | |
| Package | TO-220AB |
| Lead (Pb)-free | IRF830BPbF |
| Lead (Pb)-free and halogen-free | IRF830BPbF-BE3 |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | 500 | V | ||
| Gate-source Voltage | VGS | ± 30 | |||
| Gate-source voltage AC (f > 1 Hz) | 30 | ||||
| Continuous drain current (TJ = 150 °C) | VGS at 10 V | TC = 25 °C | ID | 5.3 | A |
| TC = 100 °C | 3.4 | ||||
| Pulsed drain current a | IDM | 10 | |||
| Linear derating factor | 0.83 | W/°C | |||
| Single pulse avalanche energy b | EAS | 28.8 | mJ | ||
| Maximum power dissipation | PD | 104 | W | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C | ||
| Drain-source voltage slope | TJ = 125 °C | dV/dt | 24 | V/ns | |
| Reverse diode dV/dt d | 0.28 | ||||
| Soldering recommendations (peak temperature) c | For 10 s | 300 | °C | ||
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature
- b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 Ω, IAS = 5 A
- c. 1.6 mm from case
- d. ISD ≤ ID, starting TJ = 25 °C
THERMAL RESISTANCE RATINGS
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum junction-to-ambient | RthJA | – | 62 | °C/W |
| Maximum junction-to-case (drain) | RthJC | – | 1.2 | |
SPECIFICATIONS
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 500 | – | – | V | |
| VDS temperature coefficient | ÄVDS/TJ | Reference to 25 °C, ID = 250 μA | – | 0.58 | – | V/°C | |
| Gate-source threshold voltage (N) | VGS(th) | VDS = VGS, ID = 250 μA | 3 | – | 5 | V | |
| Gate-source leakage | IGSS | VGS = ± 30 V | – | – | ± 100 | nA | |
| Zero gate boltage drain current | IDSS | VDS = 500 V, VGS = 0 V | – | – | 1 | μA | |
| VDS = 400 V, VGS = 0 V, TJ = 125 °C | – | – | 10 | ||||
| Drain-source on-state resistance | RDS(on) | VGS = 10 V | ID = 2.5 A | – | 1.2 | 1.5 | Ù |
| Forward transconductance a | gfs | VDS = 20 V, ID = 2.5 A | – | 1.8 | – | S | |
| Dynamic | |||||||
| Input capacitance | Ciss | VGS = 0 V, VDS = 100 V,
f = 1 MHz |
– | 325 | – | pF | |
| Output capacitance | Coss | – | 34 | – | |||
| Reverse transfer capacitance | Crss | – | 6 | – | |||
| Effective output capacitance, energy related b | Co(er) | VDS = 0 V to 400 V, VGS = 0 V | – | 31 | – | ||
| Effective output capacitance, time related c | Co(tr) | – | 41 | – | |||
| Total gate charge | Qg | VGS = 10 V | ID = 2.5 A, VDS = 400 V | – | 10 | 20 | nC |
| Gate-source charge | Qgs | – | 3 | – | |||
| Gate-drain charge | Qgd | – | 5 | – | |||
| Turn-on delay time | td(on) | VDD = 400 V, ID = 2.5 A Rg = 9.1 Ù, VGS = 10 V | – | 12 | 24 | ns | |
| Rise time | tr | – | 11 | 22 | |||
| Turn-off delay time | td(off) | – | 14 | 28 | |||
| Fall time | tf | – | 11 | 22 | |||
| Gate input resistance | Rg | f = 1 MHz, open drain | 0.8 | 1.7 | 3.4 | Ù | |
| Drain-Source Body Diode Characteristics | |||||||
| Continuous source-drain diode current | IS | MOSFET symbol showing the integral reverse P – N junction diode |
– | – | 5 | A | |
| Pulsed diode forward current | ISM | – | – | 20 | |||
| Diode forward voltage | VSD | TJ = 25 °C, IS = 4 A, VGS = 0 V | – | – | 1.2 | V | |
| Reverse recovery time | trr | TJ = 25 °C, IF = IS = 2.5 A, dI/dt = 100 A/μs, VR = 20 V | – | 320 | – | ns | |
| Reverse recovery charge | Qrr | – | 1.2 | – | μC | ||
| Reverse recovery current | IRRM | – | 8 | – | A | ||
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91520.
Package Information
| DIM. | MILLIMETERS | INCHES | ||
| MIN. | MAX. | MIN. | MAX. | |
| A | 4.24 | 4.65 | 0.167 | 0.183 |
| b | 0.69 | 1.02 | 0.027 | 0.040 |
| b(1) | 1.14 | 1.78 | 0.045 | 0.070 |
| c | 0.36 | 0.61 | 0.014 | 0.024 |
| D | 14.33 | 15.85 | 0.564 | 0.624 |
| E | 9.96 | 10.52 | 0.392 | 0.414 |
| e | 2.41 | 2.67 | 0.095 | 0.105 |
| e(1) | 4.88 | 5.28 | 0.192 | 0.208 |
| F | 1.14 | 1.40 | 0.045 | 0.055 |
| H(1) | 6.10 | 6.71 | 0.240 | 0.264 |
| J(1) | 2.41 | 2.92 | 0.095 | 0.115 |
| L | 13.36 | 14.40 | 0.526 | 0.567 |
| L(1) | 3.33 | 4.04 | 0.131 | 0.159 |
| Ø P | 3.53 | 3.94 | 0.139 | 0.155 |
| Q | 2.54 | 3.00 | 0.100 | 0.118 |
| ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 | ||||
Note
- M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Legal Disclaimer Notice
Disclaimer
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CUSTOMERS SUPPORT
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Documents / Resources
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VISHAY IRF830B D Series Power MOSFET [pdf] Owner's Manual IRF830B D Series Power MOSFET, IRF830B, D Series Power MOSFET, Power MOSFET, MOSFET |
