VISHAY IRF830 Power Mosfet
Frequently Asked Questions
Q: Is the IRF830 RoHS compliant?
A: The datasheet provides information on RoHS-compliant and non-RoHS-compliant parts, including lead (Pb) terminations. Please refer to the datasheet for details.
Q: What are the key features of the IRF830?
A: The IRF830 offers fast switching, rugged design, low on-resistance, and cost-effectiveness.
Power MOSFET
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
| PRODUCT SUMMARY | ||
| VDS (V) | 500 | |
| RDS(on) (W) | VGS = 10 V | 1.5 |
| Qg max. (nC) | 38 | |
| Qgs (nC) | 5.0 | |
| Qgd (nC) | 22 | |
| Configuration | Single | |
| ORDERING INFORMATION | |
| Package | TO-220AB |
| Lead (Pb)-free | IRF830PbF |
| Lead (Pb)-free and halogen-free | IRF830PbF-BE3 |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | 500 | V | ||
| Gate-source voltage | VGS | ± 20 | |||
| Continuous drain current | VGS at 10 V | TC = 25 °C | ID | 4.5 |
A |
| TC = 100 °C | 2.9 | ||||
| Pulsed drain current a | IDM | 18 | |||
| Linear derating factor | 0.59 | W/°C | |||
| Single pulse avalanche energy b | EAS | 280 | mJ | ||
| Repetitive avalanche current a | IAR | 4.5 | A | ||
| Repetitive avalanche energy a | EAR | 7.4 | mJ | ||
| Maximum power dissipation | TC = 25 °C | PD | 74 | W | |
| Peak diode recovery dV/dt c | dV/dt | 3.5 | V/ns | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C | ||
| Soldering recommendations (peak temperature) d | For 10 s | 300 | |||
| Mounting torque | 6-32 or M3 screw | 10 | lbf · in | ||
| 1.1 | N · m | ||||
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 Ω, IAS = 4.5 A (see fig. 12)
- c. ISD ≤ 4.5 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- d. 1.6 mm from case
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum junction-to-ambient | RthJA | – | 62 |
°C/W |
| Case-to-sink, flat, greased surface | RthCS | 0.50 | – | |
| Maximum junction-to-case (drain) | RthJC | – | 1.7 | |
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |||||
| Static | |||||||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 500 | – | – | V | |||||
| VDS temperature coefficient | DVDS/TJ | Reference to 25 °C, ID = 1 mA | – | 0.61 | – | V/°C | |||||
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 μA | 2.0 | – | 4.0 | V | |||||
| Gate-source leakage | IGSS | VGS = ± 20 V | – | – | ± 100 | nA | |||||
| Zero gate voltage drain current | IDSS | VDS = 500 V, VGS = 0 V | – | – | 25 | μA | |||||
| VDS = 400 V, VGS = 0 V, TJ = 125 °C | – | – | 250 | ||||||||
| Drain-source on-state resistance | RDS(on) | VGS = 10 V | ID = 2.7 A b | – | – | 1.5 | W | ||||
| Forward transconductance | gfs | VDS = 50 V, ID = 2.7 A b | 2.5 | – | – | S | |||||
| Dynamic | |||||||||||
| Input capacitance | Ciss | VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5 |
– | 610 | – |
pF |
|||||
| Output capacitance | Coss | – | 160 | – | |||||||
| Reverse transfer capacitance | Crss | – | 68 | – | |||||||
| Total gate charge | Qg |
VGS = 10 V |
ID = 3.1 A, VDS = 400 V, see fig. 6 and 13 b |
– | – | 38 |
nC |
||||
| Gate-source charge | Qgs | – | – | 5.0 | |||||||
| Gate-drain charge | Qgd | – | – | 22 | |||||||
| Turn-on delay Time | td(on) |
VDD = 250 V, ID = 3.1 A Rg = 12 W, RD = 79 W, see fig. 10 b |
– | 8.2 | – |
ns |
|||||
| Rise time | tr | – | 16 | – | |||||||
| Turn-off delay time | td(off) | – | 42 | – | |||||||
| Fall time | tf | – | 16 | – | |||||||
| Internal drain inductance | LD | Between lead, |  |
– | 4.5 | – | |||||
| 6 mm (0.25″) from
package and center of |
nH | ||||||||||
| Internal source inductance | LS | – | 7.5 | – | |||||||
| die contact | |||||||||||
| Gate input resistance | Rg | f = 1 MHz, open drain | 0.5 | – | 2.7 | W | |||||
| Drain-Source Body Diode Characteristics | |||||||||||
| Continuous source-drain diode current | IS | MOSFET symbol |  |
– | – | 4.5 | |||||
| showing the integral reverse | A | ||||||||||
| Pulsed diode forward current a | ISM | – | – | 18 | |||||||
| p – n junction diode | |||||||||||
| Body diode voltage | VSD | TJ = 25 °C, IS = 4.5 A, VGS = 0 V b | – | – | 1.6 | V | |||||
| Body diode reverse recovery time | trr | TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μs b | – | 320 | 640 | ns | |||||
| Body diode reverse recovery charge | Qrr | – | 1.0 | 2.0 | μC | ||||||
| Forward turn-on time | ton | Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) | |||||||||
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Disclaimer
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Documents / Resources
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VISHAY IRF830 Power Mosfet [pdf] Owner's Manual IRF830, IRF830PBF, IRF830PbF, IRF830PbF-BE3, IRF830 Power Mosfet, IRF830, Power Mosfet, Mosfet |