VISHAY EF Series Power MOSFET With Fast Body Diode
Specifications
- Product Name: SiHB055N60EF
- Brand: Vishay Siliconix
- Series: EF Series Power MOSFET With Fast Body Diode
- Package: D2PAK (TO-263)
- Channel Type: N-Channel MOSFET
- Drain-Source Voltage (VDS): 650 VGS = 10 V
- Single Pulse Avalanche Energy: 95 mJ
- Maximum Power Dissipation: 29 W
- Operating Junction and Storage Temperature Range: -55°C to +150°C
- Soldering Recommendations (Peak Temperature): 260°C for 10 seconds
Applications
The SiHB055N60EF MOSFET is suitable for various applications, including but not limited to:
- Power supplies
- Motor drives
- Inverters
- Switching regulators
- Industrial equipment
Ordering Information
To order the SiHB055N60EF, use the following part number:
- Package: D2PAK (TO-263)
- Part Number: SIHB055N60EF-GE3
Product Usage Instructions
Thermal Resistance Ratings
- Maximum Junction-to-Ambient: 62°C/W
- Maximum Junction-to-Case (Drain): 0.45°C/W
Static Parameters
- Drain-Source Breakdown Voltage (VDS): 600 V
- Gate-Source Threshold Voltage (N) (VGS(th)): 3 V
- Gate-Source Leakage (IGSS): –
- Zero Gate Voltage Drain Current (IDSS): –
- Drain-Source On-State Resistance (RDS(on)): –
Dynamic Parameters
- Input Capacitance (Ciss): 680 pF
- Output Capacitance (Coss): 63 pF
- Reverse Transfer Capacitance (Crss): 29 pF
- Effective Output Capacitance, Energy-Related (Co(er)): 15 pF
- Effective Output Capacitance, Time Related (Co(tr)): 39 pF
- Total Gate Charge (Qg): 89 nC
- Gate-Source Charge (Qgs): 56 nC
- Gate-Drain Charge (Qgd): 7 nC
- Turn-On Delay Time (td(on)): 0.8 ns
- Rise Time (tr): 13 ns
- Turn-Off Delay Time (td(off)): 1.1 ns
- Fall Time (tf): 46 ns
- Gate Input Resistance (Rg): 123 Ω
Drain-Source Body Diode Characteristics
- Continuous Source-Drain Diode Current (IS): 95 A
- Pulsed Diode Forward Current (ISM): 78 A
- Diode Forward Voltage (VSD): 1.2 V
- Reverse Recovery Time (trr): 312 ns
- Reverse Recovery Charge (Qrr): 2.2 µC
- Reverse Recovery Current (IRRM): –
| PRODUCT SUMMARY | ||
| VDS (V) at TJ max. | 650 | |
| RDS(on) typ. (W) at 25 °C | VGS = 10 V | 0.048 |
| Qg max. (nC) | 95 | |
| Qgs (nC) | 29 | |
| Qgd (nC) | 15 | |
| Configuration | Single | |
FEATURES
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Motor drives
- Battery chargers
- Solar (PV inverters)
| ORDERING INFORMATION | |
| Package | D2PAK (TO-263) |
| Lead (Pb)-free and halogen-free | SIHB055N60EF-GE3 |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | 600 | V | ||
| Gate-source voltage | VGS | ± 30 | |||
| Continuous drain current (TJ = 150 °C) | VGS at 10 V | TC = 25 °C | ID | 46 |
A |
| TC = 100 °C | 29 | ||||
| Pulsed drain current a | IDM | 123 | |||
| Linear derating factor | 2.2 | W/°C | |||
| Single pulse avalanche energy b | EAS | 286 | mJ | ||
| Maximum power dissipation | PD | 278 | W | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C | ||
| Drain-source voltage slope | TJ = 125 °C | dV/dt | 100 | V/ns | |
| Reverse diode dV/dt d | 150 | ||||
| Soldering recommendations (peak temperature) c | For 10 s | 260 | °C | ||
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature
- b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.5 A
- c. 1.6 mm from case
- d. ISD ≤ ID, dI/dt = 390 A/μs, starting TJ = 25 °C
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum junction-to-ambient | RthJA | – | 62 | °C/W |
| Maximum junction-to-case (drain) | RthJC | – | 0.45 | |
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 600 | – | – | V | |
| VDS temperature coefficient | DVDS/TJ | Reference to 25 °C, ID = 30 mA | – | 0.55 | – | V/°C | |
| Gate-source threshold voltage (N) | VGS(th) | VDS = VGS, ID = 250 μA | 3 | – | 5 | V | |
| Gate-source leakage | IGSS | VGS = ± 20 V | – | – | ± 100 | nA | |
| VGS = ± 30 V | – | – | ± 1 | μA | |||
| Zero gate voltage drain current | IDSS | VDS = 480 V, VGS = 0 V | – | – | 1 | μA | |
| VDS = 480 V, VGS = 0 V, TJ = 125 °C | – | – | 2 | mA | |||
| Drain-source on-state resistance | RDS(on) | VGS = 10 V | ID = 26.5 A | – | 0.048 | 0.055 | W |
| Forward transconductance | gfs | VDS = 10 V, ID = 26.5 A | – | 23 | – | S | |
| Dynamic | |||||||
| Input capacitance | Ciss | VGS = 0 V, VDS = 100 V,
f = 1 MHz |
– | 3707 | – |
pF |
|
| Output capacitance | Coss | – | 145 | – | |||
| Reverse transfer capacitance | Crss | – | 5 | – | |||
| Effective output capacitance, energy related a | Co(er) |
VDS = 0 V to 480 V, VGS = 0 V |
– | 110 | – | ||
| Effective output capacitance, time related b | Co(tr) | – | 680 | – | |||
| Total gate charge | Qg |
VGS = 10 V |
ID = 26.5 A, VDS = 480 V |
– | 63 | 95 |
nC |
| Gate-source charge | Qgs | – | 29 | – | |||
| Gate-drain charge | Qgd | – | 15 | – | |||
| Turn-on delay time | td(on) |
VDD = 480 V, ID = 26.5 A, VGS = 10 V, Rg = 9.1 W |
– | 39 | 78 |
ns |
|
| Rise time | tr | – | 89 | 134 | |||
| Turn-off delay time | td(off) | – | 56 | 84 | |||
| Fall time | tf | – | 7 | 14 | |||
| Gate input resistance | Rg | f = 1 MHz, open drain | 0.4 | 0.8 | 1.6 | W | |
| Drain-Source Body Diode Characteristics | |||||||
| Continuous source-drain diode current | IS | MOSFET symbol D
showing the integral reverse G p – n junction diode S |
– | – | 46 |
A |
|
| Pulsed diode forward current | ISM | – | – | 123 | |||
| Diode forward voltage | VSD | TJ = 25 °C, IS = 26.5 A, VGS = 0 V | – | – | 1.2 | V | |
| Reverse recovery time | trr |
TJ = 25 °C, IF = IS = 26.5 A, di/dt = 100 A/μs, VR = 400 V |
– | 156 | 312 | ns | |
| Reverse recovery charge | Qrr | – | 1.1 | 2.2 | μC | ||
| Reverse recovery current | IRRM | – | 13 | – | A | ||
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92420.
Package Information
TO-263AB (HIGH VOLTAGE)
| MILLIMETERS | INCHES | MILLIMETERS | INCHES | |||||||
| DIM. | MIN. | MAX. | MIN. | MAX. | DIM. | MIN. | MAX. | MIN. | MAX. | |
| A | 4.06 | 4.83 | 0.160 | 0.190 | D1 | 6.86 | – | 0.270 | – | |
| A1 | 0.00 | 0.25 | 0.000 | 0.010 | E | 9.65 | 10.67 | 0.380 | 0.420 | |
| b | 0.51 | 0.99 | 0.020 | 0.039 | E1 | 6.22 | – | 0.245 | – | |
| b1 | 0.51 | 0.89 | 0.020 | 0.035 | e | 2.54 BSC | 0.100 BSC | |||
| b2 | 1.14 | 1.78 | 0.045 | 0.070 | H | 14.61 | 15.88 | 0.575 | 0.625 | |
| b3 | 1.14 | 1.73 | 0.045 | 0.068 | L | 1.78 | 2.79 | 0.070 | 0.110 | |
| c | 0.38 | 0.74 | 0.015 | 0.029 | L1 | – | 1.65 | – | 0.066 | |
| c1 | 0.38 | 0.58 | 0.015 | 0.023 | L2 | – | 1.78 | – | 0.070 | |
| c2 | 1.14 | 1.65 | 0.045 | 0.065 | L3 | 0.25 BSC | 0.010 BSC | |||
| D | 8.38 | 9.65 | 0.330 | 0.380 | L4 | 4.78 | 5.28 | 0.188 | 0.208 | |
| ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 | ||||||||||
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994.
- Dimensions are shown in millimetres (inches).
- Dimensions D and E do not include mould flash. Mould flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the utmost extremes of the plastic body at datum A.
- Thermal PAD contour is optional within dimensions E, L1, D1 and E1.
- Dimensions b1 and c1 apply to base metal only.
- Datum A and B to be determined at datum plane H.
- Outline conforms to JEDEC outline to TO-263AB.
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
Recommended Minimum Pads Dimensions in Inches/(mm)
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims
- any liability arising out of the application or use of any product, (ii) any liability, including without limitation special, consequential or incidental damages, and (iii) any implied warranties, including warranties of fitness for a particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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FAQ
Frequently Asked Questions
- What is the maximum junction-to-ambient thermal resistance?
- The maximum junction-to-ambient thermal resistance is 62°C/W.
- What is the drain-source breakdown voltage?
- The drain-source breakdown voltage is 600 V.
- What is the gate-source threshold voltage?
- The gate-source threshold voltage is 3 V.
- What is the maximum continuous source-drain diode current?
- The maximum continuous source-drain diode current is 95 A.
- For technical questions, contact: hvm@vishay.com
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Documents / Resources
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VISHAY EF Series Power MOSFET With Fast Body Diode [pdf] Owner's Manual SIHB055N60EF, EF Series Power MOSFET With Fast Body Diode, EF Series, Power MOSFET With Fast Body Diode, MOSFET With Fast Body Diode, Fast Body Diode, Body Diode, Diode |
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VISHAY EF Series Power MOSFET With Fast Body Diode [pdf] Owner's Manual SiHD186N60EF-GE3, SiHD186N60EFT1-GE3, EF Series Power MOSFET With Fast Body Diode, EF Series, Power MOSFET With Fast Body Diode, MOSFET With Fast Body Diode, Fast Body Diode, Body Diode, Diode |