Owner's Manual for VISHAY models including: SIHB055N60EF, EF Series Power MOSFET With Fast Body Diode, EF Series, Power MOSFET With Fast Body Diode, MOSFET With Fast Body Diode, Fast Body Diode, Body Diode, Diode

SIHB055N60EF-GE3 Vishay Siliconix - РКС Компоненти - РАДІОМАГ

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SiHB055N60EF
Vishay Siliconix

EF Series Power MOSFET With Fast Body Diode

D2PAK (TO-263)

D G

GD S

S N-Channel MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration

650 VGS = 10 V
95 29 15 Single

0.048

FEATURES · 4th generation E series technology · Low figure-of-merit (FOM) Ron x Qg · Low effective capacitance (Co(er)) · Reduced switching and conduction losses · Avalanche energy rated (UIS) · Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
· Server and telecom power supplies · Switch mode power supplies (SMPS) · Power factor correction power supplies (PFC) · Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting · Industrial - Welding - Motor drives - Battery chargers - Solar (PV inverters)

ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free

D2PAK (TO-263) SIHB055N60EF-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor

VDS

VGS

VGS at 10 V

TC = 25 °C TC = 100 °C

ID

IDM

Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt d

TJ = 125 °C

EAS PD TJ, Tstg
dV/dt

Soldering recommendations (peak temperature) c

For 10 s

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 4.5 A c. 1.6 mm from case d. ISD  ID, dI/dt = 390 A/s, starting TJ = 25 °C

LIMIT 600 ± 30 46 29 123 2.2 286 278
-55 to +150 100 150 260

UNIT V
A
W/°C mJ W °C V/ns °C

S21-1035-Rev. A, 25-Oct-2021

1

Document Number: 92420

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SiHB055N60EF
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER Maximum junction-to-ambient Maximum junction-to-case (drain)

SYMBOL RthJA RthJC

TYP. -

MAX. 62 0.45

UNIT °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Static

Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N)
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic

VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs

VGS = 0 V, ID = 250 A

Reference to 25 °C, ID = 30 mA

VDS = VGS, ID = 250 A

VGS = ± 20 V

VGS = ± 30 V

VDS = 480 V, VGS = 0 V

VDS = 480 V, VGS = 0 V, TJ = 125 °C

VGS = 10 V

ID = 26.5 A

VDS = 10 V, ID = 26.5 A

Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy related a
Effective output capacitance, time related b

Ciss Coss Crss Co(er)
Co(tr)

VGS = 0 V, VDS = 100 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V

Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance Drain-Source Body Diode Characteristics

Qg Qgs Qgd td(on) tr td(off)
tf Rg

VGS = 10 V ID = 26.5 A, VDS = 480 V
VDD = 480 V, ID = 26.5 A, VGS = 10 V, Rg = 9.1  f = 1 MHz, open drain

MIN.
600 3 -
-
-
-
0.4

TYP.
0.55
0.048 23
3707 145
5
110
680
63 29 15 39 89 56 7 0.8

Continuous source-drain diode current Pulsed diode forward current

IS

MOSFET symbol showing the

D

-

-

integral reverse

G

ISM

p - n junction diode

-

-

S

Diode forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current

VSD trr Qrr IRRM

TJ = 25 °C, IS = 26.5 A, VGS = 0 V
TJ = 25 °C, IF = IS = 26.5 A, di/dt = 100 A/s, VR = 400 V

-

-

-

156

-

1.1

-

13

Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS

MAX.
5 ± 100 ± 1 1 2 0.055 -
-
95 78 134 84 14 1.6
46
123
1.2 312 2.2
-

UNIT V
V/°C V nA A A mA  S
pF
nC
ns

A
V ns C A

S21-1035-Rev. A, 25-Oct-2021

2

Document Number: 92420

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiHB055N60EF
Vishay Siliconix

1st line 2nd line

2nd line ID - Drain-to-Source Current (A)

1st line 2nd line

2nd line ID - Drain-to-Source Current (A)

Axis Title 150

15 V

14 V

120

13 V

12 V

11 V

10 V 90

10000

9 V 8 V

1000

60

30

TJ = 25 °C

7 V 100

6 V

0

5 V

10

0

5

10

15

20

VDS - Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

Axis Title

100

15 V 14 V

TJ = 150 °C

10000

13 V

80

12 V

11 V

8 V

10 V

1000

60

7 V

40

6 V

100

20 5 V

0

10

0

5

10

15

20

VDS - Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

Axis Title 160
TJ = 25 °C
120

80

40

TJ = 150 °C

10000 1000 100

VDS = 26.2 V

0

10

0

5

10

15

20

VGS - Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

1st line 2nd line Coss - Outpu2tnCdalipnaecitance (pF)

1st line 2nd line 2nd line C - Capacitance (pF)

1st line 2nd line RDS(on) - Drain-to-Source On-Resistance (Normalized)

3.0 ID =26.5 A
2.5

Axis Title

10000

2.0

1000

1.5

VGS = 10 V

1.0

100

0.5

0

10

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ - Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

100 000

Axis Title

10000

10 000 1000 100

Ciss Coss

1000

10

Crss

100

1

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds shorted

0.1

Crss = Cgd

Coss = Cds + Cgd

0.01 0

100 200 300 400 500 VDS - Drain-to-Source Voltage (V)

10 600

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Axis Title

100 000

25

10 000

1000

Coss

100

20
15 Eoss
10
5

10 0

100 200 300 400 500 VDS - Drain-to-Source Voltage (V)
Fig. 6 - Coss and Eoss vs. VDS

0 600

Eoss - Output Capacitance Stored Energy (µJ) 2nd line

2nd line ID - Drain-to-Source Current (A)

S21-1035-Rev. A, 25-Oct-2021

3

Document Number: 92420

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SiHB055N60EF
Vishay Siliconix

1st line 2nd line

2nd line VGS - Gate-to-Source Voltage (V)

Axis Title 12

VDS = 480 V

VDS = 300 V

9

VDS = 120 V

6

3

10000 1000 100

0

10

0

20

40

60

80

Qg - Total Gate Charge (nC)

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

Axis Title

10000

100

2nd line ISD - Reverse Drain Current (A)

TJ = 150 °C 10

1000

TJ = 25 °C

1

100

0.1 0.2

VGS = 0 V
10 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-Drain Voltage (V)

Fig. 8 - Typical Source-Drain Diode Forward Voltage

Axis Title

10000

100

IDM limited

Limited by RDS(on) a
10 Operation in this area limited by RDS(on)

BVDSS limited
1000 100 µs

2nd line ID - Drain Current (A)

1

100

TC = 25 °C, TJ = 150 °C, single pulse

0.1 1

10

100

VDS - Drain-to-Source Voltage (V)

1 ms
10 ms 10
1000

Fig. 9 - Maximum Safe Operating Area

Note a. VGS > minimum VGS at which RDS(on) is specified

1st line 2nd line

1st line 2nd line 2nd line VDS - Drain-to-Source Breakdown Voltage (Normalized)

1st line 2nd line 2nd line ID - Drain Current (A)

Axis Title

60

10000

45 1000
30
100 15

0 25

50

75

100 125

TC - Case Temperature (°C)

10 150

Fig. 10 - Maximum Drain Current vs. Case Temperature

Axis Title

1.2

10000

1st line 2nd line

1.1 1000
1
100 0.9

ID = 30 mA

0.8

10

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ - Junction Temperature (°C)

Fig. 11 - Temperature vs. Drain-to-Source Voltage

S21-1035-Rev. A, 25-Oct-2021

4

Document Number: 92420

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SiHB055N60EF
Vishay Siliconix

Normalized Effective Transient Thermal Impedance 1st line 2nd line

1 Duty cycle = 0.5

0.2
0.1 0.1
0.05
0.02

Single pulse

Axis Title

10000 1000 100

0.01 0.0001

0.001

0.01

0.1

Pulse Time (s)

Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case

10 1

VDS VGS Rg

RD D.U.T.

10 V
Pulse width  1 s Duty factor  0.1 %

+- VDD

Fig. 13 - Switching Time Test Circuit

VDS tp
VDD VDS
IAS Fig. 16 - Unclamped Inductive Waveforms

VDS 90 %

10 % VGS

td(on) tr

td(off) tf

Fig. 14 - Switching Time Waveforms

Qg 10 V

Qgs

Qgd

VG

Charge Fig. 17 - Basic Gate Charge Waveform

VDS Vary tp to obtain required IAS
Rg
10 V tp

L
D.U.T. IAS
0.01 

+ - VDD

Fig. 15 - Unclamped Inductive Test Circuit

Current regulator Same type as D.U.T.

12 V

50 k

0.2 F

0.3 F

+ D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 18 - Gate Charge Test Circuit

S21-1035-Rev. A, 25-Oct-2021

5

Document Number: 92420

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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D.U.T.
+
2
-
1 Rg

SiHB055N60EF
Vishay Siliconix

Peak Diode Recovery dv/dt Test Circuit

+

Circuit layout considerations

· Low stray inductance

3

· Ground plane

· Low leakage inductance

current transformer

-

- 4+

· dv/dt controlled by Rg · Driver same type as D.U.T.
· ISD controlled by duty factor "D" · D.U.T. - device under test

+ - VDD

1 Driver gate drive

P.W.

Period

D =

P.W. Period

VGS = 10 V a

2 D.U.T. ISD waveform

Reverse

recovery

Body diode forward

current

current di/dt

3 D.U.T. VDS waveform

Diode recovery

dv/dt V DD

Re-applied voltage
4

Inductor current

Body diode forward drop

Ripple  5 %

ISD

Note a. VGS = 5 V for logic level devices

Fig. 19 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92420.

S21-1035-Rev. A, 25-Oct-2021

6

Document Number: 92420

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Package Information
Vishay Siliconix

TO-263AB (HIGH VOLTAGE)

(Datum A)

34

A

E

4 L1

4

A

A

B

c2

D

5

H

1

CC 23

L2 BB

Detail A

2 x e

2 x b2 2 x b
0.010 M A M B
Plating (c)

A

c

± 0.004 M B

5 b1, b3

Base metal

c1 5

Gauge plane
0° to 8°

H B

Seating plane

L3 L L4

A1

Detail "A"

Rotated 90° CW

scale 8:1

E D1 4

Lead tip

(b, b2)
Section B - B and C - C Scale: none

E1

4

View A - A

MILLIMETERS

INCHES

MILLIMETERS

INCHES

DIM.

MIN.

MAX.

MIN.

MAX.

DIM.

MIN.

MAX.

MIN.

MAX.

A

4.06

4.83

0.160

0.190

D1

6.86

-

0.270

-

A1

0.00

0.25

0.000

0.010

E

9.65

10.67

0.380

0.420

b

0.51

0.99

0.020

0.039

E1

6.22

-

0.245

-

b1

0.51

0.89

0.020

0.035

e

2.54 BSC

0.100 BSC

b2

1.14

1.78

0.045

0.070

H

14.61

15.88

0.575

0.625

b3

1.14

1.73

0.045

0.068

L

1.78

2.79

0.070

0.110

c

0.38

0.74

0.015

0.029

L1

-

1.65

-

0.066

c1

0.38

0.58

0.015

0.023

L2

-

1.78

-

0.070

c2

1.14

1.65

0.045

0.065

L3

0.25 BSC

0.010 BSC

D

8.38

9.65

0.330

0.380

L4

4.78

5.28

0.188

0.208

ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 Revision: 15-Sep-08
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RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420 (10.668)

AN826
Vishay Siliconix

0.635 (16.129)
0.355 (9.017)

Return to Index

0.135 (3.429)

0.200 (5.080)

0.145 (3.683)
0.050 (1.257)

Recommended Minimum Pads Dimensions in Inches/(mm)

Document Number: 73397 11-Apr-05
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Disclaimer

Legal Disclaimer Notice
Vishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2022

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References

• applications.no
• vishay.com/doc?91000
• SiHB055N60EF MOSFETs | Vishay