IRFBC40 Vishay Siliconix Discrete Owner's Manual

Description
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is widely used in commercial-industrial applications due to its low thermal resistance and cost.

Ordering Information

Lead (Pb)-free: IRFBC40PbF

Lead (Pb)-free and halogen-free: IRFBC40PbF-BE3

Thermal Resistance Ratings

Maximum Junction-to-Ambient: 62°C/W
Case-to-sink, flat, greased surface: 1.0°C/W

Maximum Junction-to-Case (Drain): 0.50°C/W

Product Usage Instructions

Mounting: Use a 6-32 or M3 screw for mounting the device with the specified torque.

Operating Temperature: Ensure the operating temperature range is between -55°C to +150°C.
Soldering: Follow the soldering recommendations with a peak temperature not exceeding the specified value for 10 seconds.

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated

Fast switching
Ease of paralleling

Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

PRODUCT SUMMARY
V_DS (V)	600
RDS(on) (W)	V_GS = 10 V	1.2
Q_g max. (nC)	60
Q_gs (nC)	8.3
Q_gd (nC)	30
Configuration	Single

ORDERING INFORMATION
Package	TO-220AB
Lead (Pb)-free	IRFBC40PbF
Lead (Pb)-free and halogen-free	IRFBC40PbF-BE3

	ORDERING INFORMATION
	Package			TO-220AB
	Lead (Pb)-free			IRFBC40PbF
	Lead (Pb)-free and halogen-free			IRFBC40PbF-BE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER					SYMBOL	LIMIT	UNIT
Drain-source voltage					VDS	600	V
Gate-source voltage					VGS	± 20
Continuous drain current		V_GS at 10 V	T_C = 25 °C		I_D	6.2	A
			T_C = 100 °C			3.9
Pulsed drain current a					IDM	25
Linear derating factor						1.0	W/°C
Single pulse avalanche energy b					EAS	570	mJ
Repetitive avalanche current a					IAR	6.2	A
Repetitive avalanche energy a					EAR	13	mJ
Maximum power dissipation		T_C = 25 °C			P_D	125	W
Peak diode recovery dV/dt c					dV/dt	3.0	V/ns
Operating junction and storage temperature range					TJ, Tstg	-55 to +150	°C
Soldering recommendations (peak temperature) d		For 10 s				300
Mounting torque		6-32 or M3 screw				10	lbf · in
						1.1	N · m

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = 50 V, starting TJ = 25 °C, L = 27 mH, Rg = 25 Ω, IAS = 6.2 A (see fig. 12)
ISD ≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
1.6 mm from the case

THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum junction-to-ambient	RthJA	–	62	°C/W
Case-to-sink, flat, greased surface	RthCS	0.50	–
Maximum junction-to-case (drain)	RthJC	–	1.0

SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
Static
Drain-source breakdown voltage	VDS	V_GS = 0 V, I_D = 250 μA		600	–	–	V
V_DS temperature coefficient	DV_DS/T_J	Reference to 25 °C, I_D = 1 mA		–	0.7	–	V/°C
Gate-source threshold voltage	VGS(th)	V_DS = V_GS, I_D = 250 μA		2.0	–	4.0	V
Gate-source leakage	IGSS	V_GS = ± 20 V		–	–	± 100	nA
Zero gate voltage drain current	IDSS	V_DS = 600 V, V_GS = 0 V		–	–	100	μA
Zero gate voltage drain current	IDSS	V_DS = 480 V, V_GS = 0 V, T_J = 125 °C		–	–	500	μA
Drain-source on-state resistance	RDS(on)	V_GS = 10 V	I_D = 3.7A b	–	–	1.2	W
Forward transconductance	gfs	V_DS = 100 V, I_D = 3.7 A b		4.7	–	–	S
Dynamic
Input capacitance	Ciss	V_GS = 0 V, V_DS = 25 V, f = 1.0 MHz, see fig. 5		–	1300	–	pF
Output capacitance	Coss			–	160	–
Reverse transfer capacitance	Crss			–	30	–
Total gate charge	Q_g	V_GS = 10 V	I_D = 6.2 A, V_DS = 360 V, see fig. 6 and 13 b	–	–	60	nC
Gate-source charge	Qgs			–	–	8.3
Gate-drain charge	Qgd			–	–	30
Turn-on delay time	td(on)	V_DD = 300 V, I_D = 6.2 A, R_g = 9.1 W, R_D = 47 W, see fig. 10 b		–	13	–	ns
Rise time	t_r			–	18	–
Turn-off delay time	td(off)			–	55	–
Fall time	t_f			–	20	–
Gate input resistance	R_g	f = 1 MHz, open drain		0.3	–	3.9	W
Internal drain inductance	L_D	Between lead, D 6 mm (0.25″) from package and center of G die contact		–	4.5	–	nH
Internal source inductance	L_S			–	7.5	–	nH
Drain-Source Body Diode Characteristics
Continuous source-drain diode current	I_S	MOSFET symbol D showing the integral reverse G p – n junction diode		–	–	6.2	A
Pulsed diode forward current a	ISM			–	–	25	A
Body diode voltage	VSD	T_J = 25 °C, I_S = 6.2 A, V_GS = 0 V b		–	–	1.5	V
Body diode reverse recovery time	trr	T_J = 25 °C, I_F = 6.2 A, dI/dt = 100 A/μs b		–	450	940	ns
Body diode reverse recovery charge	Qrr	T_J = 25 °C, I_F = 6.2 A, dI/dt = 100 A/μs b		–	3.8	7.9	μC
Forward turn-on time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91115.

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.
To the maximum extent permitted by applicable law, Vishay disclaims
1. any and all liability arising out of the application or use of any product,
2. any and all liability, including without limitation special, consequential or incidental damages, and
3. any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

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FAQ

Is this product RoHS-compliant?
This datasheet provides information on RoHS-compliant and non-RoHS-compliant parts. Please refer to the datasheet for specific details.

What is the maximum drain-source voltage?
The maximum drain-source voltage is 600V.

What is the package type of this MOSFET?
The package type is TO-220AB.

Documents / Resources

VISHAY IRFBC40 Vishay Siliconix Discrete [pdf] Owner's Manual
IRFBC40, IRFBC40PbF, IRFBC40PbF-BE3, IRFBC40 Vishay Siliconix Discrete, IRFBC40, Vishay Siliconix Discrete, Siliconix, Discrete

References

User Manual

IRFBC40 Vishay Siliconix Discrete