User Manual for onsemi models including: NCP1680 Totem Pole CrM Controller Evaluation Board, NCP1680, Totem Pole CrM Controller Evaluation Board, CrM Controller Evaluation Board, Controller Evaluation Board, Evaluation Board
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DocumentDocumentEVAL BOARD USER'S MANUAL www.onsemi.com NCP1680 - Totem Pole CrM Controller Evaluation Board User's Manual EVBUM2822/D Introduction The NCP1680 is a Critical Conduction Mode (CrM) Power Factor Correction (PFC) controller IC designed to drive the bridgeless Totem Pole PFC (TPFC) topology. The bridgeless totem pole PFC consists of two totem pole legs: a fast switching leg driven at the PWM switching frequency and a second leg that operates at the AC line frequency. This topology eliminates the diode bridge present at the input of a conventional PFC circuit, allowing significant improvement in efficiency and power density. Figure 1. NCP1680 Evaluation Board The NCP1680 Evaluation Board (EVB) user guide demonstrates a universal line, 300 W totem pole PFC built using NCP1680. NCP1680 is intended for Industrial power supplies, Telecom/5G/Networking power, USB PD, Gaming consoles, UHD TV power supplies, and Lighting applications. TPFC topology eliminates the need for heatsinks or forced air in the NCP1680 EVB while operating at an ambient of 25°C. Table 1. KEY SPECIFICATIONS Description Input Voltage Range Line Frequency Range Value Unit 90-265 Vac 47-63 Hz Output Voltage 395 V Output Power 300 W Output Ripple < 5 % PF @ Full Load > 0.95 THD @ Full Load < 10 % Inductor Value 150 mH Inductor Core Size/Geometry PQ3220 Bulk Capacitor Value 200 mF Maximum Frequency 130 kHz NOTE: NCP1680 EVB is a high voltage demonstration board. It can accept an input voltage of 90 Vac to 265 Vac and the output voltage of the board is 395 Vdc nominally. This EVB is for demonstration purposes only and should not be used to power any loads other than an electronic load. Only trained professionals in using high voltage equipment should handle the board and appropriate safety precautions should be followed. © Semiconductor Components Industries, LLC, 2022 1 February, 2022 - Rev. 0 Publication Order Number: EVBUM2822/D EVBUM2822/D TYPICAL APPLICATION SCHEMATIC VAC SR2 SRH SRL SR1 NCP51530 HI VB LI HO COM HB LO VCC VCC VO 400-Vac Vac + -+ -+ VL +400 V + -+ 0 V -+ NCP1680 FAULT LVSNS2 PFCOK LVSNS1 FB AUX SKIP VCC GND ZCD PWMH PWML SRH PGND SRL POLARITY VCC VDDH HOSRC HOSNK SW RAUX VCC VBST VDD NCP51820 VDDL LOSRC LOSNK PGND EN HIN LIN SGND DT S2 VO RLOAD _ + S1 ZCD RZCD Figure 2. Typical Application Schematic of a CrM Totem Pole PFC Utilizing NCP1680 As shown in Figure 2, the slow leg switches (SR1 & SR2) are high voltage silicon-based FETs, also known as super junction (SJ) FETs, and the fast leg switches (S1 & S2) are Enhancement-mode Gallium Nitride (eGaN) devices. Since NCP1680 employs a CrM control architecture where the inductor current resets back to zero before the next switching cycle, low reverse recovery charge (Qrr) SJ FETs can also be utilized for the fast leg albeit with slightly inferior performance, but better cost structure. As a controller the NCP1680 is agnostic to the fast leg switch technology. Wide-Bandgap (WBG) devices such as Silicon Carbide (SiC) or eGaN are recommended for optimal performance. SiC is a good choice for lower frequency applications while eGaN is an excellent choice for both low frequency and high frequency applications. The NCP1680 evaluation board is designed such that engineers interested in this novel topology can easily probe various signals and learn the intricacies of TPFC. The fast leg half bridge is implemented on a daughter card where the fast leg switches are driven using NCP51820, a high voltage eGaN half-bridge driver; the slow leg switches are driven using NCP51530, a high voltage Si FET half-bridge driver. The NCP1680 employs a novel current limit scheme where a simple resistor placed in the return path between bulk ground and the IC ground, is utilized for current limiting. The Zero Current Detection (ZCD) resistor is further utilized for drive control of the synchronous switch in the fast leg. Additionally, the NCP1680 requires only a single auxiliary winding to sense switch node valleys (in positive half-line cycle) and switch node peaks (in negative half line cycle). This novel scheme results in the main boost switch being turned on with minimal voltage across the switch improving efficiency and reducing EMI. www.onsemi.com 2 EVBUM2822/D BOARD DESCRIPTION AND TEST SETUP Figure 3. NCP1680 Evaluation Board along with a Daughter Card Featuring Fast Leg Switches The evaluation motherboard and daughter card are shown in Figure 3. The motherboard includes multiple I/O connectors and test points to simplify instrumentation and waveform capture during the evaluation process. A brief description and pinout of the I/O connectors is shown in Table 2, and a listing of the test points plus the respective circuit node is shown in Table 3. There are some key points worth mentioning regarding the I/O connectors and test points: · The pins labeled GND and VOUT_RTN are NOT electrically common. GND and VOUT_RTN are physically separated by the ZCD resistor and the user should take precaution to not short these two nodes together. For example, the ground lead of an Earth-connected oscilloscope probe should not be simultaneously connected to both GND and VOUT_RTN. · The EVB requires an external VCC bias supply. It is recommended to connect this bias supply at the J3 connector or across the TP8-TP10 test points. The recommended operating range for VCC is 1218 V with a current sourcing capability greater than 10 mA. Once the EVB has been enabled, VCC can fall as low as 9 V before the NCP1680 UVLO circuit disables the controller. A VCC voltage greater than 20 V will trip the EVB over-voltage protection (OVP) and latch off the controller. · J6 AC Input connector is pinned out for a 3-wire AC input connection. However, the chassis GND connection is not required and can be left open. The user should determine the appropriate input connection based on their application requirements. · J10 SKIP header should be open to allow normal operation of the EVB. Placing a jumper across the J10 header will force the EVB into Skip/Standby mode operation, described later. · J11 Inrush current limiter (ICL) bypass is populated by default. If the user wishes to operate the NCP1680 EVB with an ICL then J11 must be removed before populating the ICL at REF DES RT2. · J12 Daughter card interface is not keyed. User should take precaution that the daughter card is correctly oriented into J12. Furthermore, user must take precaution that the daughter card is never inserted or removed while VCC is applied to the motherboard, doing so can damage EVB. Table 2. I/O CONNECTOR DESCRIPTIONS REF DES Function Pinout J1, J7, J8, J9 GND Peg 1. GND J2 DC Output 1. VOUT_RTN Voltage 2. N/C 3. VOUT J3 VCC 1. VCC 2. GND J4 PFCOK Skip 1. CNTRL Signal Interface 2. GND J6 AC Input Voltage 1. AC Line 2. Chassis GND 3. AC Neutral J10 SKIP Control 1. CNTRL Header 2. GND J11 Inrush Current 1. VOUT_NTC Limit Bypass 2. VOUT J12 Daughter Card 1-6: VOUT_NTC Interface 7-12: VBRIDGE 13-18: PWRGND 19-28: N/C 29-32: GND 33-34: PWML/LIN 35-36: PWMH/HIN 37-38: VCC www.onsemi.com 3 EVBUM2822/D Table 3. TEST POINT DESCRIPTIONS REF DES Node TP1 NCP1680 AUX Pin TP2 GND @ NCP51530 Driver TP3 NCP1680 FB Pin TP4 NCP1680 PFCOK Pin TP5 NCP51530 VCC1 TP6 NCP1680 ZCD Pin TP7 VOUT_SNS TP8 NCP1680 VCC Pin TP9 NCP1680 Polarity Pin TP10 GND @ J3 Connector TP11 Haversine @ L2 Inductor TP12 Fast Leg Bridge Node REF DES TP13 TP14 TP15 TP16 TP17 TP18 TP19 TP20 TP21 TP22 TP23 TP24 Node Slow Leg Bridge Node VOUT VOUT_RTN NCP1680 SRH NCP1680 SRL PWRGND NCP1680 SKIP Pin NCP1680 LVSNS2 Pin NCP1680 LVSNS1 Pin NCP1680 PWMH/HIN NCP1680 PWML/LIN NCP1680 Fault Pin In order to replicate the data published in this design note, the following test set up is recommended: · For higher power measurements (> 10% load), always arrange the connection so that the voltmeters at input and output are as close to NCP1680 evaluation board (UUT) as possible to avoid power loss due to resistance of the wiring or any other instrumentation. · For input power measurement, please read power measurement directly from the power meter. Do not VAC Power Meter A V multiply VAC and IAC measurements, this is the apparent power of UUT. The power measurement provides the real power consumed by the UUT. · Do not use the electronic load reading for output voltage measurement. A separate DMM placed directly across output (TP14-TP15) will produce a more accurate reading than the eLoad and cancels some of the instrumentation power loss in ammeter. UUT eLoad V A Figure 4. Test Setup for NCP1680 EVB www.onsemi.com 4 Efficiency EVBUM2822/D PERFORMANCE CHARACTERISTICS DATA AND WAVEFORMS Power Factor Figure 5. Efficiency vs. Output Power Figure 6. Power Factor vs. Output Power www.onsemi.com 5 Total Harmonic Distortion EVBUM2822/D Figure 7. THD vs. Output Power Switching Frequency at the Peak of AC Line vs. Output Power Figure 8. Switching Frequency vs. Output Power www.onsemi.com 6 Soft-Start Load Transient EVBUM2822/D Ch. 1 (Yellow): Line Current Ch. 2 (Blue): Polarity Ch. 3 (Purple): PFCOK Ch. 4 (Green): Bulk Voltage Figure 9. Soft-Start 10% to 100% Load Step 100% to 10% Load Step In the above waveforms, NCP1680's dynamic response enhancer (DRE) limits the lower bulk voltage to 367 V while the output overvoltage protection (OVP) limits the upper bulk voltage to 418 V. Transient data was captured at 115 Vac. Ch. 1 (Yellow): Line Current Ch. 2 (Blue): PWML Ch. 3 (Purple): PWMH Ch. 4 (Green): Bulk Voltage Figure 10. Load Transient www.onsemi.com 7 EVBUM2822/D Input Current Waveforms and Output Ripple at Various Line Voltages Figure 11. Input Current Waveforms and Output Ripple at Various Line Voltages Skip/Standby Mode Control The NCP1680 features a Skip/Standby mode which enables the application to achieve very good no-load and light-load performance. The device must be externally commanded to enter the Skip mode by pulsing the PFCOK pin or grounding the SKIP pin, and in a typical application this control signal would be provided by a downstream DC-DC converter. For the NCP1680 motherboard, additional circuitry shown in Figure 12 has been designed in to allow the user to easily transition the EVB into the Skip/Stanbdy mode without the use of a downstream converter. The J10 header which is a standard 2 position, 100 mil pitch connector header, provides a path to GND for the SKIP pin. The user can operate the EVB in Skip mode by placing a mating jumper (such as TE Connectivity 382811-6) across the header, grounding the SKIP pin. J10 is conveniently located on the PCB away from any high voltage nodes so that the jumper can be placed while the EVB is in live operation. Nonetheless, the user should exercise caution when placing this jumper to prevent injury to themselves or damage to the EVB. www.onsemi.com 8 EVBUM2822/D Figure 12. NCP1680 EVB Skip Interfaces The second skip interface on the EVB is at the J4 connector which can be used to connect in a function generator to pulse the PFCOK pin. For the NCP1680 to enter skip mode the PFCOK pin must be pulsed below 400 mV for a duration greater than 50 ms as is shown in Figure 13. It is recommended that the function generator output be a signal with 05 V amplitude where the output remains at 5 V for at least 100 ms to meet the threshold requirements on the PFCOK pin. Figure 13. PFCOK Skip-Entry Signal (Ch1 = Bulk Voltage, Ch2 = PFCOK, Ch4 = SKIP) Once skip mode has been entered the NCP1680 controller will regulate the bulk voltage with a form of hysteretic control, meaning that the bulk voltage will cycle between its nominal regulation voltage and ~94% of nominal regulation. The frequency at which the bulk voltage cycles will be dependent on the output load. To maintain the EVB in skip/standby mode it is necessary to continue pulsing the PFCOK pin wherein every PFCOK pulse must meet the previously stated voltage and timing threshold requirements. The pulse frequency to maintain skip mode must be faster than the frequency at which the bulk voltage cycles between nominal regulation and 94% of nominal regulation. Hence it is technically possible to operate the EVB in skip mode at any load level and often in applications, skip operation may be necessary up to 510% of the rated load. Figure 14 shows skip mode operation with the EVB loaded at 20 W. A lighter load, or no load will result in much longer cycle frequency and better performance. www.onsemi.com 9 EVBUM2822/D Figure 14. NCP1680 Skip Mode Operation (Ch1 = Bulk Voltage, Ch2 = PFCOK, Ch4 = SKIP) Control Loop Measurement The NCP1680 controller is embedded with an internal compensator circuit which provides the necessary loop bandwidth to ensure good power factor performance, and also provides sufficient phase & gain margin at the loop crossover frequency to ensure stable and robust operation of the application. Verification of the control loop characteristics is a good practice for any power supply design. The NCP1680 motherboard provides a 1 kW injection resistor and test points (TP14, TP7) around the injection resistor enabling the use of a network analyzer with an isolated injection transformer to measure the loop response of the EVB. Figure 15 shows the loop response of the NCP1680 EVB with 300 W load, measured at 115 VAC and 230 VAC. The loop bandwidth measures from ~ 811 Hz with about 70° of phase margin and > 14 dB of gain margin. www.onsemi.com 10 EVBUM2822/D Figure 15. EVB Bode Plots @ 300 W; 115 V on Top; 230 V on Bottom Thermal Performance The NCP1680 EVB and daughter card where also evaluated for thermal performance while operating at 90 VAC and 300 W. Thermal images of the fast leg GaN HEMTs, the boost inductor, and the slow leg silicon FETs are shown in Figure 16. These images were captured in a 25°C ambient environment with no external air flow. The high efficiency performance of the TPFC is evident in the device temperatures where the fast and slow leg switches measure below 60°C, a modest 35°C rise above room temperature. The daughter card PCB is also designed in a manner that eliminates the need for an additional heatsink to be mounted to the board. The PCB's internal copper planes function as heat sinking and the temperature rise of the fast leg switches is well controlled by these copper planes. Figure 16. Thermal Measurement of Fast Leg eGaN Switches, Boost Inductor, and Slow leg Si FETs www.onsemi.com 11 EVBUM2822/D MOTHERBOARD PCB ARTWORK Figure 17. Motherboard PCB (Part 1/3) www.onsemi.com 12 EVBUM2822/D MOTHERBOARD PCB ARTWORK (Continued) Figure 18. Motherboard PCB (Part 2/3) www.onsemi.com 13 EVBUM2822/D MOTHERBOARD PCB ARTWORK (Continued) Figure 19. Motherboard PCB (Part 3/3) www.onsemi.com 14 EVBUM2822/D DAUGHTERBOARD PCB ARTWORK Figure 20. Daughterboard PCB (Part 1/2) www.onsemi.com 15 EVBUM2822/D DAUGHTERBOARD PCB ARTWORK (Continued) Figure 21. Daughterboard PCB (Part 2/2) www.onsemi.com 16 EVBUM2822/D TRANSFORMER DATA SHEET Figure 22. Transformer Data Sheet www.onsemi.com 17 Motherboard Control Section EVBUM2822/D SCHEMATIC Motherboard Power Train Figure 23. Motherboard Control Section Figure 24. Motherboard Power Train www.onsemi.com 18 Daughter Card EVBUM2822/D Figure 25. Daughter Card www.onsemi.com 19 EVBUM2822/D BILL OF MATERIALS Table 4. BILL OF MATERIALS MOTHERBOARD Item Qty REF DES Value Description Manufacturer MPN 1 1 C7 1 nF CAP CER 1000 pF 50 V C0G/NP0 0603 Kemet C0603X102J5GAC7867 2 1 C10 22 pF CAP CER, NPO 22 pF 50 V Wurth 885012006053 3 1 C11 0.1 mF CAP CER 0.1 mF 50 V 10% X7R 0603 Murata GCM188R71H104KA57D 4 1 C14 10 n CAP CER 10 nF 50 V X7R 0603 Yageo CC0603KRX7R9BB103 5 1 C15 0.1 mF CAP CER 0.1 mF 50 V 10% X7R 0603 Murata GCM188R71H104KA57D 6 1 C17 0.1 mF CAP CER 0.1 mF 50 V 10% X7R 1206 Kemet C1206C104K5RACAUTO 7 1 C19 10 mF CAP CER 10 mF 25 V 10% X7R 1206 Samsung CL31B106KAHNNNE 8 1 C25 22 mF CAP ALUM 22 mF 20% 50 V RADIAL Nichicon UVK1H220MDD1TD 9 1 C29 22 nF CAP CER 22 nF 50 V X7R 0603 Kemet C0603C223K5RACTU 10 1 C30 1 mF CAP CER 1 mF 25 V 10% X7R 0603 Samsung CL10B105KA8NNNC 11 1 C31 22 mF CAP CER 22 mF 25 V 10% X5R 1206 Samsung CL31A226KAHNNNE 12 2 C1-2 820 nF Cap, X Type, 275 V, AC, Polypropylene Kemet R46KI382040P0 13 2 C12-13 1 nF CAP CER 1 nF 630 V X7R 1206 Yageo CC1206KKX7RZBB102 14 2 C16, C18 100 mF CAP ALUM 100 mF 20% United Chemi-Con EKXG451ELL101MM40S 450 V Rad. 18 x 40 mm 15 2 C20-21 0.1 mF CAP CER 0.1 mF 630 V 10% X7R 1210 Kemet C1210C104KBRAC7800 16 2 C22-23 2.2 nF CAP FILM 2200 pF 20% 1.25 kVDC RAD Kemet PHE850EA4220MA01R17 17 1 C24 1 nF CAP CER 1000 pF 50 V C0G/NP0 0603 Kemet C0603X102J5GAC7867 18 1 C26 2.2 nF CAP CER 2200 pF 50 V X7R 0603 19 2 C27-28 DNP CAP CER DNP Placeholder 0603 20 3 C4, C8-9 220 pF CAP CER 220 pF C0G/NPO 0603 21 2 C5-6 2.2 nF Cap, Disc, Y Type, 760 VAC Kemet NA Kemet Kemet C0603C222M5RACTU NA C0603C221J5GACTU C961U222MWWDBA7317 22 1 D6 ES1J Diode Ultrafast 600 V SOD-123-FL 23 2 D1-2 S3M Diode GEN PURP 1 kV 3A 24 3 D3-5 BAT54H Diode Schottky 30 V 200 mA (DC) Surface Mount SOD-323 25 4 D7-10 MMSD4148 DIODE GEN PURP 100 V 200 mA SOD123 onsemi onsemi onsemi onsemi ES1JFL S3M BAT54HT1G MMSD4148T1G 26 1 F1 27 1 J10 28 1 J11 5A Fuse, 8.4 x 4 mm, 5.08 mm spacing Bel Fuse Connector, Header, 100Mil spacing Amphennol Jumper, 1 mm dia. 10.16 mm, Gold Harwin RSTA 5 AMMO 67997-224HLF D3082-05 PCB Footprint 603 603 603 603 603 1206 1206 Radial 603 603 1206 MBox, Radial 1206 Round, Radial 1210 Radial, 13 x 4 mm 603 603 603 603 Box, Axial SOD-123_ FL SMC SOD-323_ rev3 SOD-123 Thru-Hole Thru-Hole Thru-Hole Substitution Allowed Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes No Yes Yes Yes No Yes Yes No Yes No No No Yes Yes Yes Yes Yes www.onsemi.com 20 EVBUM2822/D Table 4. BILL OF MATERIALS MOTHERBOARD (continued) Item Qty REF DES 29 1 J12 30 4 J1, J7-9 Value Description Conn, Edge, Dual, Female, 26 Position Testpin, Gold, 40mil Manufacturer TE Connectivity Mill-Max 31 2 32 2 J2, J6 J3-4 10 Amp Header, Vert. 3 pin, 5 mm Spacing 2 Position Wire to Board Terminal Block Horizontal with Board 0.138" (3.5 mm) LS OST Phoenix Contact 33 1 L1 150 mH Inductor, Differential, 150 mH, 5.4 A_42mW Wurth 34 1 L2 150 mH PFC Inductor, AUX, 150 mH, 3 A, Np:Naux = 10:1 Wurth 35 1 L3 35 mH Common Mode Choke, 2x 35 mH, 2x 80 mW, 3.5 A Wurth 36 1 L4 37 2 M1-2 38 5 MT1-5 39 5 MT1-5 Screw 7 mH Common Mode Choke, 2x 7 mH, 2x 20 mW, 7 A MOSFET N CH 650 V 44A TO-220F HEX STANDOFF #6-32 NYLON 3/4" MACHINE SCREW PAN PHILLIPS 6-32, NYLON Wurth onsemi Keystone B&F Fastener Supply 40 1 Q2 Transistor, PNP, 40 V, 200 mA onsemi 41 2 Q1, Q3 Transistor, NPN, 40 V, 200 mA onsemi 42 1 R1 10 kW RES 10 kW 1% 1/8 W 0603 Stackpole 43 1 R4 10 W RES, SMD, 1/10 W Yageo 44 1 R8 DNP RES SMD 0603 NA PLACEDHOLDER 45 1 R18 DNP NA NA 46 1 R38 1 kW RES SMD 1 kW 5% 1/2 W 1206 Vishay Dale 47 1 R41 47.5 kW RES SMD 47.5 kW 1% Stackpole 1/10 W 0603 48 2 R10, R15 0W RES SMD JUMPER 5% 1/4 W 1206 Panasonic 49 6 R11-14, 3.3 MW RES SMD 3.3 MW 1% R33, R35 1/4 W 1206 Vishay Dale 50 2 R16-17 100 kW RES SMD 100 kW 1% 1/10 W 0603 Stackpole 51 2 R19-20 47 kW RES SMD 47 kW 5% 1/8 W 0805 Vishay Dale 52 2 R2-3 1.0 kW RES SMD 1.0 kW 1% 1/10 W 0603 Yageo 53 2 R21-22 49.9 W RES, SMD, 1/10 W Yageo 54 2 R23-24 10 W RES, SMD, 1/10 W Vishay Dale 55 3 R25-27 2.49 MW RES SMD 2.49 MW 1% 1/4 W 1206 Stackpole 56 3 R34, R36, 100 kW RES SMD 100 kW 1% R42 1/10 W 0603 57 2 R39-40 4.99 kW RES SMD 4.99 kW 1% 1/10 W 0603 Stackpole Yageo MPN 1761426-3 3103-2-00-21-00-00- 08-0 ED100/3DS 1984617 PCB Footprint Thru-Hole, 26 pos SIP-1 Substitution Allowed Yes Yes Thru-Hole Yes TBD Yes 7447055 750319168 Thru-Hole No PQ3230 No 7448040435 Thru-Hole No 7448040707 Thru-Hole No FCPF067N65S3 TO-220 No 1903D NA Yes NY PMS 632 0025 PH Yes MMBT3906 SOT-23 Yes MMBT3904LT1G SOT-23 Yes RNCP0603FTD10K0 603 Yes RC0603FR-0710RL 603 Yes NA 603 Yes NA 1206 Yes CRCW12061K00JNEAHP 1206 Yes RMCF0603FT47K5 603 Yes ERJ-8GEY0R00V 1206 Yes CRCW12063M30FKEA 1206 Yes RMCF0603FT100K 603 Yes CRCW080547K0JNEA 805 Yes RC0603FR-071KL 603 Yes AC0603FR-0749R9L 603 Yes RC0603FR-0710RL 603 Yes RMCF1206FT2M49 1206 Yes RMCF0603FT100K 603 Yes RC0603FR-074K99L 603 Yes www.onsemi.com 21 EVBUM2822/D Table 4. BILL OF MATERIALS MOTHERBOARD (continued) Item Qty REF DES 58 2 R5, R37 59 2 R6-7 Value 1.0 kW 250 mW Description RES SMD 1.0 kW 1% 1/10 W 0603 RES, SMD, 2 W Manufacturer Yageo Vishay 60 6 R9, R28-32 10 kW RES 10 kW 1% 1/8 W 0603 61 1 RT1 100 kW NTC 100 kW 4250K 5% 0805 62 1 RT2 DNP Thermistor, NTC, 10 W, 3.7A 63 1 RT3 Vairistor, Disc, 470 V, 4.5 kA 64 1 S1 Switch, Mom, 32 V, 50 mA, SMD 65 20 TP1, TP3-9, TP11-14, TP16-17, TP19-24 TEST POINT PC MINI RED 66 4 TP2, TP10, TP15, TP18 TEST POINT PC MINI BLK 67 1 U1 NCP1680 Totem Pole PFC Controller, SOIC16 68 1 U2 NCP51530 High Frequency Gate Driver 69 1 70 2 Z1 Z2-3 4.7 V 15 V Zener Diode Zener Diode Stackpole Murata TDK Littlefuse C&K Keystone Keystone onsemi onsemi onsemi onsemi MPN RC0603FR-071KL WSR2R2500FEA RNCP0603FTD10K0 NCP21WF104J03RA B57237S0100M000 V300LA20AP KMR221GLFS 5000 PCB Footprint 603 Substitution Allowed Yes WSR2_ No 4527 603 Yes 805 No Thru-Hole No Thru-Hole No SMD Yes Thru-Hole Yes 5001 Thru-Hole Yes NCP1680AAD1R2G SOIC-16 No NCP51530ADR2G SOIC-8 No MMSZ5230BT1G SOD-123 Yes MMSZ4702T1G SOD-123 Yes www.onsemi.com 22 EVBUM2822/D Table 5. BILL OF MATERIALS DAUGHTER CARD Item 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Qty REF DES Value Description 1 C1 3.3 mF CAP, SMD, CERAMIC, 25 V, X5R 1 C2 100 nF CAP, SMD, CERAMIC, 25 V, X7R 1 C3 2.2 mF CAP, SMD, CERAMIC, 25 V, X5R 1 C6 10 pF CAP, SMD, CERAMIC, 50 V, NPO 1 C10 0.1 mF CAP, SMD, CERAMIC, 25 V, X7R 2 C4, C5 0.1 mF CAP CER 0.1 mF 630 V 10% X7R 1210 2 C7, C11 1 mF CAP, SMD, CERAMIC, 25 V, X7R 2 C8, C9 47 pF CAP, SMD, CERAMIC, 0 V, NPO 1 D1 ES1J DIODE FAST REC 1 A 600 V 1 J1 Conn, Edge, Etch, Mate to TE1761426-3. Goldfinger 3 J2, J5, J6 DNP Testpin, Gold, 40mil 3 J3, J4, J7 DNP Tip and Barrel pads 2 Q1, Q2 GS66508B GaNFET, 650 V, E-mode, 30 A, 50 mW, Kelvin Source 1 R1 100 W RES, SMD, 1/16 W 1 R2 2W RES, SMD, 1/10 W 1 R6 60.4 kW RES, SMD, 1/16 W 2 R3, R10 49.9 W RES, SMD, 49.9 R 1/10 W 0603 2 R4, R11 4.99 W RES, SMD, 1/10 W 2 R5, R12 10 kW RES, SMD, 1/10 W 1 U1 High Speed Half Bridge GaN Driver Manufacturer TDK Yageo Murata Murata Murata Kemet Murata Murata onsemi TE Connectivity Keystone GaN Systems Yageo TE Connectivity Yageo Vishay Dale Vishay Yageo onsemi MPN C1608X5R1E335K080AC PCB Footprint 603 Substitution Allowed Yes CC0603KRX7R8BB104 603 Yes GRM188R61E225MA12D 603 Yes GRM1555C1H100JA01J 402 Yes GRM155R71E104KE14D 402 Yes C1210C104KBRAC7800 1210 Yes GCM188R71E105KA64D 603 Yes GRM1555C1H470JA01D 402 Yes ES1J SMA No 1761426-3_MATE PCB No 1352-1 N/A GS66508B Thru-Hole Yes Thru-Hole Yes SMD_7.1 x No 8.5 mm RC0402FR-07100RL 402 Yes CPF0603F2R0C1 603 Yes RC0402FR-0760K4L 402 Yes CRCW060349R9FKEAC 603 Yes CRCW06034R99FKEA 603 Yes RC0603FR-0710KL 603 Yes NCP51820 MLP No 4 x 4-15 www.onsemi.com 23 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba "onsemi" or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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