Manual
1.1 Features
This is a TFT graphic display Multifunction Tester.
- ✔️ Automatic detection of zener diode 0.01-30V
- ✔️ Self test with automatic calibration
- ✔️ IR decoder
- ✔️ Support Hitachi IR coding
- ✔️ IR waveform display
- ✔️ Infrared receiving instruction
Other
- Measurement results using TFT graphic display(160x128)
- One key operation
- Auto Power Off(Timeout Settable)
- Support Chinese and English
Warning 1: Built-in Li-ion Battery, it is strictly prohibited the tester immersed in water, or near a heat source!
Warning 2: For your personal safety, please strictly comply with the use of Li-ion Battery specifications and precautions!
1.2 Operating Instructions
Key operational definitions
[Multi-function key has two actions]
- Short press: Press the key and not less than 10 ms, release key within 1.5 seconds
- Long press: Press the key more than 1.5 seconds
[Power on]
In the power off state, short press the multifunction key, the tester is turned on and automatically measured.
Power on & measurement interface: The tester screen displays "M-Tester", "Testing...", "[ Vbat = 3.64V ]", followed by pin indicators "123|123|2" and "KAA|123|3".
1.3 Detect transistor
In the power off state or after a test is completed, place the test element into the transistor test area of the test seat and press the locking handle. Short press the multifunction key; the tester will automatically measure and display graphical results upon completion.
Warning: Always be sure to DISCHARGE capacitors before connecting them to the tester! The tester may be damaged before you have switched it on!
Warning: We do not recommend using the tester to measure the battery! The battery voltage must be less than 4.5V, otherwise the tester may be damaged!
Component placement
The test seat is divided into transistors and zener diode test areas, as detailed in the technical specifications.
Component Diagrams
Battery
The tester displays battery status with "M-Tester", "Cell", "3.72V" and numbered pins (1, 2, 3, 31, 32). Multiple battery cell configurations are shown.
BJT (Bipolar Junction Transistor)
BJT-NPN: The display shows "M-Tester", "BJT-NPN", with pin labels "1 B", "2 C", "3 E". Parameters displayed include "hFE=302", "Ube=651mV", "Ic=2.8mA". Some displays show "588mv" for Ube.
BJT-PNP: The display shows "M-Tester", "BJT-PNP", with pin labels "1 B", "2 C", "3 E". Parameters displayed include "hFE=302", "Ube=651mV", "Ic=2.8mA". Some displays show "588mv" for Ube.
Thyristor
The display shows "M-Tester", "Thyristor", with pin labels "1 G", "2 A", "3 K". The parameter displayed is "Uf=770mv".
Triac
The display shows "M-Tester", "Triac", with pin labels "1 G", "2 A", "3 K". The parameter displayed is "Uf=770mv".
Capacitor
The display shows "M-Tester", "Capacitor", capacitance value "103.3uF", "Vloss=3.4%", "ESR=0.71Ω". Pin labels are "1", "2", "3".
2.8 Built-in Li-ion Battery voltage measurement
The built-in Li-ion Battery voltage is measured before detection. When the battery voltage is less than 3.0V, the tester will force shutdown, requiring charging.
Charging interface: The screen displays "M-Tester", "Charge the battery!", "[Vbat = 2.90V]", followed by pin indicators "123|123|2" and "KAA|123|3".
2.9 Charging the Battery
The tester features a standard Micro USB interface. Please use an external 5V power supply or USB power for charging.
2.6 IR decoder
After component detection is complete, point an infrared remote control at the tester's "IR" test hole and press a key. The tester will display the user code and data code, along with the corresponding infrared waveform, upon successful decoding.
If decoding fails, the user code and data code will not be displayed.
A dot in the top right corner indicates the status of infrared data reception: red signifies data reception, while blue indicates successful decoding.
IR Decoder interface: The screen displays "M-Tester", "IR Decoder", a waveform representation, "UserCode: 00BF", and "DataCode: 00FF".
Technical Specifications
The main performance parameters are as follows:
| Component | Range | Parameter Description |
|---|---|---|
| BJT | hFE(DC Current Gain), Ube(Base-Emitter Voltage), Ic(Collector Current), Iceo(Collector Cut-off Current (IB=0)), Ices(Collector short Current), Uf(Forward Voltage of protecting diode) | |
| Diode | Forward Voltage <4.50V | Forward Voltage, Diode Capacitance, Ir(Reverse Current) |
| Double Diodes | Forward Voltage | |
| Zener Diode | 0.01-4.50V (Transistor test area) | Forward Voltage, Reverse Voltage |
| 0.01-30V (Zener Diode test area) | Reverse Voltage | |
| JFET | Cg(Gate Capacitance), Id(Drain Current) at Vgs(Gate to Source Threshold Voltage), Uf(Forward Voltage of protecting diode) | |
| MOSFET | Id(Drain Current) at Vgs(Gate to Source Threshold Voltage), Uf(Forward Voltage of protecting diode) | |
| IGBT | Vt(Gate to Source Threshold Voltage), Cg(Gate Capacitance), Rds(Drain to Source On Resistance), Uf(Forward Voltage of protecting diode) | |
| MOSFET | Vt(Gate to Source Threshold Voltage), Cg(Gate Capacitance), Rds(Drain to Source On Resistance), Uf(Forward Voltage of protecting diode) | |
| Thyristor | Igt(Gate trigger current)<6mA | Gate trigger voltage |
| Triac | Gate trigger voltage | |
| Capacitor | 25pF-100mF | Capacitance, ESR(Equivalent Series Resistance), Vloss |
| Resistor | 0.01-50MΩ | Resistance |
| Inductor | 0.01mH-20H | Inductance, DC Resistance |
| Battery | 0.1-4.5V | Voltage, Battery Polarity |
