IRF510 N-Channel Power MOSFET

Product Summary

Features

• Dynamic dV/dt rating
• Repetitive avalanche rated
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Ordering Information

Absolute Maximum Ratings (Tc = 25 °C, unless otherwise noted)

Thermal Resistance Ratings

Specifications (TJ = 25 °C, unless otherwise noted)

Static

Dynamic

Drain-Source Body Diode Characteristics

Typical Characteristics

Diagram of a TO-220AB package showing the three terminals: Source (S), Drain (D), and Gate (G).

Diagram of an N-channel MOSFET symbol with terminals labeled D (Drain), G (Gate), and S (Source).

Fig. 1 - Typical Output Characteristics, Tc = 25 °C: Graph showing Drain Current (ID) vs. Drain-to-Source Voltage (VDS) for various Gate-Source Voltages (VGS) from 4.5 V to 15 V, with a pulse width of 20 μs at Tc = 25 °C.

Fig. 2 - Typical Output Characteristics, Tc = 175 °C: Graph showing Drain Current (ID) vs. Drain-to-Source Voltage (VDS) for various Gate-Source Voltages (VGS) from 4.5 V to 15 V, with a pulse width of 20 μs at Tc = 175 °C.

Fig. 3 - Typical Transfer Characteristics: Graph showing Drain Current (ID) vs. Gate-to-Source Voltage (VGS) for VDS = 50 V, with a 20 μs pulse width, at 25 °C and 175 °C.

Fig. 4 - Normalized On-Resistance vs. Temperature: Graph showing Normalized Drain-to-Source On-Resistance (RDS(on)) vs. Junction Temperature (TJ) in °C, under conditions of ID = 5.6 A and VGS = 10 V.

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage: Graph showing Ciss, Coss, and Crss capacitance in pF vs. Drain-to-Source Voltage (VDS) in Volts, measured at VGS = 0 V and f = 1.0 MHz.

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage: Graph showing Total Gate Charge (QG) in nC vs. Gate-to-Source Voltage (VGS) in Volts, for ID = 5.6 A and VDS = 80 V, with different VDS conditions (20 V, 50 V, 80 V) indicated.

Fig. 7 - Typical Source-Drain Diode Forward Voltage: Graph showing Reverse Drain Current (ISD) in Amperes vs. Source-to-Drain Voltage (VSD) in Volts, for VGS = 0 V at 25 °C and 175 °C.

Fig. 8 - Maximum Safe Operating Area: Graph showing Drain Current (ID) vs. Drain-to-Source Voltage (VDS) in Volts, illustrating operating limits based on pulse width (≤ 1 μs, 100 μs, 1 ms, 10 ms) and temperature (25 °C, 175 °C), with an indication that operation is limited by RDS(on).

Fig. 9 - Maximum Drain Current vs. Case Temperature: Graph showing Drain Current (ID) in Amperes vs. Case Temperature (TC) in °C, for VGS = 10 V and VDS = 50 V.

Fig. 10a - Switching Time Test Circuit: Diagram of the test circuit used for measuring switching times, including DUT, VDD, RG, and driver circuit.

Fig. 10b - Switching Time Waveforms: Diagram illustrating switching time parameters: td(on) (turn-on delay), tr (rise time), td(off) (turn-off delay), and tf (fall time).

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case: Graph showing Thermal Response (ZthJC) vs. Rectangular Pulse Duration (t1) in seconds, for single pulse conditions.

Fig. 12a - Unclamped Inductive Test Circuit: Diagram of the test circuit for unclamped inductive load testing, including DUT, inductor (L), VDD, RG, and pulse source.

Fig. 12b - Unclamped Inductive Waveforms: Diagram illustrating voltage and current waveforms during unclamped inductive testing.

Fig. 12c - Maximum Avalanche Energy vs. Drain Current: Graph showing Single Pulse Energy (EAS) in mJ vs. Starting Junction Temperature (TJ) in °C, for different drain currents (ID) at VDD = 25 V.

Fig. 13a - Basic Gate Charge Waveform: Diagram illustrating the waveform of gate charge accumulation.

Fig. 13b - Gate Charge Test Circuit: Diagram of the test circuit used for measuring gate charge parameters (Qg, Qgs, Qgd).

Fig. 14 - For N-Channel (Peak Diode Recovery dV/dt Test Circuit): Diagram of the test circuit for measuring peak diode recovery dV/dt, including circuit layout considerations and waveforms for reverse recovery current, VDS, and inductor current.

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