SiR4608LDP
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
PowerPAK® SO-8 Single
PRODUCT SUMMARY
| VDS (V) | 60 |
| RDS(on) max. (W) at VGS = 10 V | 0.0115 |
| RDS(on) max. (W) at VGS = 4.5 V | 0.0153 |
| Qg typ. (nC) | 7 |
| ID (A) | 43.4 |
| Configuration | Single |
FEATURES
- TrenchFET ® Gen IV power MOSFET
- Very low R DS x Q figure-of-merit (FOM)
- Tuned for the lowest R g DS x Q FOM
- 100 % R g oss and UIS tested
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Synchronous rectification
- Primary side switch
- DC/DC converters
- OR-ing
- Power supplies
- Motor drive control
- Battery and load switch
N-Channel MOSFET
ORDERING INFORMATION
| Package | PowerPAK SO-8 |
| Lead (Pb)-free and halogen-free | SIR4608LDP-T1-GE3 |
| ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) | ||||
| PARAMETER | SYMBOL | LIMIT | UNIT | |
| Drain-source voltage | VDS | 60 | V | |
| Gate-source voltage | VGS | ± 20 | ||
| Continuous drain current (TJ = 150 °C) | TC = 25 °C | ID | 43.4 | A |
| TC = 70 °C | 34.7 | |||
| TA = 25 °C | 13.3 b, c | |||
| TA = 70 °C | 10.6 b, c | |||
| Pulsed drain current (t = 100 μs) | IDM | 100 | ||
| Continuous source-drain diode current | TC = 25 °C | IS | 35.5 a | |
| TA = 25 °C | 3.3 b, c | |||
| Single pulse avalanche current | L = 0.1 mH | IAS | 15 | |
| Single pulse avalanche energy | EAS | 11.25 | mJ | |
| Maximum power dissipation | TC = 25 °C | PD | 39 | W |
| TC = 70 °C | 25 | |||
| TA = 25 °C | 3.6 b, c | |||
| TA = 70 °C | 2.3 b, c | |||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C | |
| Soldering recommendations (peak temperature) d, e | 260 | |||
THERMAL RESISTANCE RATINGS
| PARAMETER | SYMBOL | TYPICAL | MAXIMUM | UNIT | |
| Maximum junction-to-ambient b | t £ 10 s | RthJA | 24 | 34 | °C/W |
| Maximum junction-to-case (drain) | Steady state | RthJC | 2.5 | 3.2 | |
Notes
a. T C = 25 °C
b. Surface mounted on 1″ x 1″ FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 70 °C/W
SPECIFICATIONS
(TJ= 25 °C, unless otherwise noted)
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | ||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT |
| Static | ||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 60 | – | – | V |
| VDS temperature coefficient | DVDS/TJ | ID = 10 mA | – | 34 | – | mV/°C |
| VGS(th) temperature coefficient | DVGS(th)/TJ | ID = 250 μA | – | -4.1 | – | |
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 μA | 1 | – | 3 | V |
| Gate-source leakage | IGSS | VDS = 0 V, VGS = ± 20 V | – | – | 100 | nA |
| Zero gate voltage drain current | IDSS | VDS = 60 V, VGS = 0 V | – | – | 1 | μA |
| VDS = 60 V, VGS = 0 V, TJ = 70 °C | – | – | 15 | |||
| Drain-source on-state resistance a | RDS(on) | VGS = 10 V, ID = 10 A | – | 0.0094 | 0.0115 | W |
| VGS = 4.5 V, ID = 10 A | – | 0.0128 | 0.0153 | |||
| Forward transconductance a | gfs | VDS = 15 V, ID = 10 A | – | 31 | – | S |
| Dynamic b | ||||||
| Input capacitance | Ciss | VDS = 30 V, VGS = 0 V, f = 1 MHz | – | 905 | – |
pF |
| Output capacitance | Coss | – | 198 | – | ||
| Reverse transfer capacitance | Crss | – | 6.2 | – | ||
| Total gate charge | Qg | VDS = 30 V, VGS = 10 V, ID = 10 A | – | 15 | 23 |
nC |
| VDS = 30 V, VGS = 4.5 V, ID = 10 A | – | 7 | 11 | |||
| Gate-source charge | Qgs | – | 3.1 | – | ||
| Gate-drain charge | Qgd | – | 1.95 | – | ||
| Output charge | Qoss | VDS = 30 V, VGS = 0 V | – | 12.4 | – | |
| Gate resistance | Rg | f = 1 MHz | 0.7 | 1.5 | 2.6 | W |
| Turn-on delay time | td(on) | VDD = 30 V, RL = 3 W, ID @ 10 A, VGEN = 10 V, Rg = 1 W | – | 9 | 18 |
ns |
| Rise time | tr | – | 6 | 12 | ||
| Turn-off delay time | td(off) | – | 17 | 34 | ||
| Fall time | tf | – | 4 | 8 | ||
| Turn-on delay time | td(on) | VDD = 30 V, RL = 3 W, ID @ 10 A, VGEN = 4.5 V, Rg = 1 W | – | 13 | 26 | |
| Rise time | tr | – | 58 | 116 | ||
| Turn-off delay time | td(off) | – | 16 | 32 | ||
| Fall time | tf | – | 8 | 16 | ||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous source-drain diode current | IS | TC = 25 °C | – | – | 35.5 | A |
| Pulse diode forward current | ISM | – | – | 100 | ||
| Body diode voltage | VSD | IS = 5 A, VGS = 0 V | – | 0.81 | 1.1 | V |
| Body diode reverse recovery time | trr | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | – | 19 | 38 | ns |
| Body diode reverse recovery charge | Qrr | – | 9 | 18 | nC | |
| Reverse recovery fall time | ta | – | 9 | – | ns | |
| Reverse recovery rise time | tb | – | 10 | – | ||
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Note
a. V GS > minimum V GS at which R DS(on) is specified
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Note
a. The power dissipation P D is based on T max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62026.
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Revision: 01-Jan-2025
Document Number: 91000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
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Documents / Resources
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VISHAY SiR4608LDP-T1-GE3 N-Channel 60 V Mosfet [pdf] Owner's Manual SiR4608LDP-T1-GE3, SiR4608LDP-T1-GE3 N-Channel 60 V Mosfet, SiR4608LDP-T1-GE3, N-Channel 60 V Mosfet, 60 V Mosfet, Mosfet |