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VISHAY IRFPC60LC Power MOSFET

VISHAY-IRFPC60LC-Power-MOSFET-PRODUCT

Product Usage Instructions

  • The IRFPC60LC Power MOSFET by Vishay Siliconix is designed for high-power applications with a maximum drain-source voltage of 600V and low on-state resistance.

Installation

  • Ensure proper grounding and safety precautions are taken before installation.
  • Mount the TO-247AC package securely using a 6-32 or M3 screw with the recommended mounting torque.
  • Follow soldering recommendations for peak temperature exposure of 10 seconds.

Operation

  • Apply a gate-source voltage (VGS) of 10V for optimal performance.
  • Avoid exceeding the maximum drain current and pulse drain current ratings.
  • Maintain the operating junction temperature within the specified range (-55°C to +150°C).

Maintenance

  • Regularly inspect the Power MOSFET for any signs of damage or overheating during operation. Replace if necessary.

FAQ

  • Q: What is the recommended gate-source voltage for this MOSFET?
    • A: The recommended gate-source voltage is 10V for optimal performance.
  • Q: What is the maximum drain-source voltage of the IRFPC60LC?
    • A: The maximum drain-source voltage is 600V.
  • Q: How should I mount the TO-247AC package?
    • A: Use a 6-32 or M3 screw with the specified mounting torque to securely mount the package.

FEATURES

  • Ultra low gate charge
  • Reduced gate drive requirement
  • Enhanced 30 V VGS rating
  • Reduced Ciss, Coss, Crss
  • Isolated central mounting hole
  • Dynamic dV/dt rated
  • Repetitive avalanche-rated
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VISHAY-IRFPC60LC-Power-MOSFET-FIG-2Note
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details.

VISHAY-IRFPC60LC-Power-MOSFET-FIG-1

PRODUCT SUMMARY
VDS (V) 600
RDS(on) (W) VGS = 10 V 0.40
Qg (max.) (nC) 120
Qgs (nC) 29
Qgd (nC) 48
Configuration Single

DESCRIPTION

  • This new series of low-charge Power MOSFETs achieve significantly lower gate charges over conventional MOSFETs.
  • Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.
  • These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standart in power transistors for switching applications.
  • The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free IRFPC60LCPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 600 V
Gate-source voltage VGS ± 30
Continuous drain current VGS at 10 V TC = 25 °C ID 16  

A

TC = 100 °C 10
Pulsed drain current a     IDM 64
Linear derating factor       2.2 W/°C
Single pulse avalanche energy b     EAS 1000 mJ
Repetitive avalanche current a     IAR 16 A
Repetitive avalanche energy a     EAR 28 mJ
Maximum power dissipation TC = 25 °C PD 280 W
Peak diode recovery dV/dt c     dV/dt 3.0 V/ns
Operating junction and storage temperature range     TJ, Tstg -55 to +150 °C
Soldering recommendations (peak temperature) for 10 s   300 d
Mounting torque 6-32 or M3 screw   10 lbf · in
1.1 N · m

Notes

  • Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
  • VDD = 25 V, starting TJ = 25 °C, L = 7.2 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12)
  • ISD ≤ 16 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
  • 1.6 mm from the case
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA 40 °C/W
Case-to-sink, flat, greased surface RthCS 0.24
Maximum junction-to-case (drain) RthJC 0.45

SPECIFICATIONS

VISHAY-IRFPC60LC-Power-MOSFET-FIG-15

Notes

  • Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
  • Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VISHAY-IRFPC60LC-Power-MOSFET-FIG-5 VISHAY-IRFPC60LC-Power-MOSFET-FIG-6 VISHAY-IRFPC60LC-Power-MOSFET-FIG-7 VISHAY-IRFPC60LC-Power-MOSFET-FIG-8 VISHAY-IRFPC60LC-Power-MOSFET-FIG-9 VISHAY-IRFPC60LC-Power-MOSFET-FIG-10VISHAY-IRFPC60LC-Power-MOSFET-FIG-11

Package Information

TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9

 

VISHAY-IRFPC60LC-Power-MOSFET-FIG-12

  MILLIMETERS  
DIM. MIN. NOM. MAX. NOTES
A 4.83 5.02 5.21  
A1 2.29 2.41 2.55  
A2 1.17 1.27 1.37  
b 1.12 1.20 1.33  
b1 1.12 1.20 1.28  
b2 1.91 2.00 2.39 6
b3 1.91 2.00 2.34  
b4 2.87 3.00 3.22 6, 8
b5 2.87 3.00 3.18  
c 0.40 0.50 0.60 6
c1 0.40 0.50 0.56  
D 20.40 20.55 20.70 4
  MILLIMETERS  
DIM. MIN. NOM. MAX. NOTES
D1 16.46 16.76 17.06 5
D2 0.56 0.66 0.76  
E 15.50 15.70 15.87 4
E1 13.46 14.02 14.16 5
E2 4.52 4.91 5.49 3
e 5.46 BSC  
L 14.90 15.15 15.40  
L1 3.96 4.06 4.16 6
Ø P 3.56 3.61 3.65 7
Ø P1 7.19 ref.  
Q 5.31 5.50 5.69  
S 5.51 BSC  

Notes

  1. Package reference: JEDEC® TO247, variation AC
  2. All dimensions are in mm
  3. Slot required, notch may be rounded
  4. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
  5. Thermal pad contour optional with dimensions D1 and E1
  6. Lead finish uncontrolled in L1
  7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
  8. Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total over b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

VISHAY-IRFPC60LC-Power-MOSFET-FIG-13

  MILLIMETERS  
DIM. MIN. MAX. NOTES
A 4.58 5.31  
A1 2.21 2.59  
A2 1.17 2.49  
b 0.99 1.40  
b1 0.99 1.35  
b2 1.53 2.39  
b3 1.65 2.37  
b4 2.42 3.43  
b5 2.59 3.38  
c 0.38 0.86  
c1 0.38 0.76  
D 19.71 20.82  
D1 13.08  
  MILLIMETERS  
DIM. MIN. MAX. NOTES
D2 0.51 1.30  
E 15.29 15.87  
E1 13.72  
e 5.46 BSC  
Ø k 0.254  
L 14.20 16.25  
L1 3.71 4.29  
Ø P 3.51 3.66  
Ø P1 7.39  
Q 5.31 5.69  
R 4.52 5.49  
S 5.51 BSC  
     

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994
  2. Contour of the slot optional
  3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
  4. Thermal pad contour optional with dimensions D1 and E1
  5. Lead finish uncontrolled in L1
  6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
  7. Outline conforms to JEDEC outline TO-247 with the exception of dimension c

VERSION 3: FACILITY CODE = N

VISHAY-IRFPC60LC-Power-MOSFET-FIG-14

  MILLIMETERS     MILLIMETERS
DIM. MIN. MAX. DIM. MIN. MAX.
A 4.65 5.31 D2 0.51 1.35
A1 2.21 2.59 E 15.29 15.87
A2 1.17 1.37 E1 13.46
b 0.99 1.40 e 5.46 BSC
b1 0.99 1.35 k 0.254
b2 1.65 2.39 L 14.20 16.10
b3 1.65 2.34 L1 3.71 4.29
b4 2.59 3.43 N 7.62 BSC
b5 2.59 3.38 P 3.56 3.66
c 0.38 0.89 P1 7.39
c1 0.38 0.84 Q 5.31 5.69
D 19.71 20.70 R 4.52 5.49
D1 13.08 S 5.51 BSC
ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994
  2. Contour of the slot optional
  3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
  4. Thermal pad contour optional with dimensions D1 and E1
  5. Lead finish uncontrolled in L1
  6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

Legal Disclaimer Notice

  • ALL PRODUCTS, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
  • Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
  • Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) all implied warranties, including warranties of fitness for a particular purpose, non-infringement and merchantability.
  • Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
  • Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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CONTACT

Documents / Resources

VISHAY IRFPC60LC Power MOSFET [pdf] Owner's Manual
IRFPC60LC, IRFPC60LC Power MOSFET, Power MOSFET, MOSFET

References

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