VISHAY IRFD9014 Siliconix Power MOSFET
Specifications
- Brand: Vishay Siliconix
- Product Name: IRFD9014
- Type: Power MOSFET
- Package Type: HVMDIP
- Channel Type: P-Channel
- Drain-Source Voltage (VDS): -60V
- On-Resistance (RDS(on)): 3.8 Ohms
- Total Gate Charge (Qg): 5.1 nC (Max.)
- Gate-Source Charge (Qgs): 0.50 nC
- Gate-Drain Charge (Qgd): 12 nC
Product Usage Instructions
| PRODUCT SUMMARY | ||
| VDS (V) | -60 | |
| RDS(on) (W) | VGS = -10 V | 0.50 |
| Qg (Max.) (nC) | 12 | |
| Qgs (nC) | 3.8 | |
| Qgd (nC) | 5.1 | |
| Configuration | Single | |
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- For automatic Insertion
- End stackable
- P-channel
- 175 °C operating temperature
- Fast switching
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insert able case style which can be stacked in multiple combinations on standard 0.1″ pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.
| ORDERING INFORMATION | |
| Package | HVMDIP |
| Lead (Pb)-free | IRFD9014PbF |
| ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) | |||||
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-source voltage | VDS | -60 | V | ||
| Gate-source voltage | VGS | ± 20 | |||
| Continuous drain current | VGS at 10 V | TA = 25 °C | ID | -1.1 | A |
| TA = 100 °C | -0.80 | ||||
| Pulsed drain current a | IDM | -8.8 | |||
| Linear derating factor | 0.0083 | W/°C | |||
| Single pulse avalanche energy b | EAS | 140 | mJ | ||
| Repetitive avalanche current a | IAR | -1.1 | A | ||
| Repetitive avalanche energy a | EAR | 0.13 | mJ | ||
| Maximum power dissipation | TA = 25 °C | PD | 1.3 | W | |
| Peak diode recovery dV/dt c | dV/dt | -4.5 | V/ns | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 to +175 | °C | ||
| Soldering recommendations (peak temperature) | For 10 s | 300d | |||
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. VDD = -25 V, starting TJ = 25 °C, L = 33 mH, Rg = 25 Ω, IAS = -2.2 A (see fig. 12)
- c. ISD ≤ -6.7 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
- d. 1.6 mm from case
| THERMAL RESISTANCE RATINGS | ||||
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
| Maximum Junction-to-Ambient | RthJA | – | 120 | °C/W |
| SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) | |||||||
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT | |
| Static | |||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = -250 μA | -60 | – | – | V | |
| VDS Temperature Coefficient | DVDS/TJ | Reference to 25 °C, ID = -1 mA | – | -0.060 | – | V/°C | |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = -250 μA | -2.0 | – | -4.0 | V | |
| Gate-Source Leakage | IGSS | VGS = ± 20 V | – | – | ± 100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -60 V, VGS = 0 V | – | – | -100 | μA | |
| VDS = -48 V, VGS = 0 V, TJ = 150 °C | – | – | -500 | ||||
| Drain-Source On-State Resistance | RDS(on) | VGS = -10 V | ID = -0.66 Ab | – | – | 0.50 | W |
| Forward Transconductance | gfs | VDS = -25 V, ID = -0.66 Ab | 0.70 | – | – | S | |
| Dynamic | |||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = -25 V,f = 1.0 MHz, see fig. 5 | – | 270 | – | pF | |
| Output Capacitance | Coss | – | 170 | – | |||
| Reverse Transfer Capacitance | Crss | – | 31 | – | |||
| Total Gate Charge | Qg | VGS = -10 V | ID = -6.7 A, VDS = -48 V,see fig. 6 and 13b | – | – | 12 | nC |
| Gate-Source Charge | Qgs | – | – | 3.8 | |||
| Gate-Drain Charge | Qgd | – | – | 5.1 | |||
| Turn-On Delay Time | td(on) | VDD = -30 V, ID = -6.7 A,Rg = 24 W, RD = 4.0 W, see fig. 10b | – | 11 | – | ns | |
| Rise Time | tr | – | 63 | – | |||
| Turn-Off Delay Time | td(off) | – | 10 | – | |||
| Fall Time | tf | – | 31 | – | |||
| Internal Drain Inductance | LD | Between lead, 6 mm (0.25″) from package and center of die contact |
– | 4.0 | – | nH | |
| Internal Source Inductance | LS | – | 6.0 | – | |||
| Drain-Source Body Diode Characteristics | |||||||
| Continuous Source-Drain Diode Current | IS | MOSFET symbol showing the integral reverse p – n junction diode  |
– | – | -1.1 | A | |
| Pulsed Diode Forward Current a | ISM | – | – | -8.8 | |||
| Body Diode Voltage | VSD | TJ = 25 °C, IS = -1.1 A, VGS = 0 Vb | – | – | -5.5 | V | |
| Body Diode Reverse Recovery Time | trr | TJ = 25 °C, IF = -6.7 A, dI/dt = 100 A/μsb | – | 80 | 160 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | – | 0.096 | 0.19 | μC | ||
| Forward Turn-On Time | ton | Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) | |||||
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91136.
HVM DIP (High voltage)
| INCHES | MILLIMETERS | |||
| DIM. | MIN. | MAX. | MIN. | MAX. |
| A | 0.310 | 0.330 | 7.87 | 8.38 |
| E | 0.300 | 0.425 | 7.62 | 10.79 |
| L | 0.270 | 0.290 | 6.86 | 7.36 |
| ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974 | ||||
Note
- Package length does not include mold flash, protrusions or gate burrs. Package width does not include inter lead flash or protrusions.
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limite d to the warranty expressed therein.
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FAQ
- What is the maximum Drain-Source Voltage for IRFD9014?
The maximum Drain-Source Voltage (VDS) for IRFD9014 is -60V. - What is the On-Resistance of IRFD9014?
The On-Resistance (RDS(on)) of IRFD9014 is 3.8 Ohms. - Where can I find detailed features of IRFD9014?
You can find detailed features of IRFD9014 at www.vishay.com/doc?99912. - What is the maximum power dissipation level supported by IRFD9014?
The IRFD9014 supports power dissipation levels up to 1W.
Documents / Resources
 |
VISHAY IRFD9014 Siliconix Power MOSFET [pdf] Owner's Manual IRFD9014, IRFD9014 Siliconix Power MOSFET, Siliconix Power MOSFET, Power MOSFET |
