FEATURES

• Hyper fast recovery time, reduced Qrr, and soft recovery
  
  
  HALOGEN
  FREE
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 
  
  

DESCRIPTION / APPLICATIONS

State of the art hyper fast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyper fast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics.
These devices are intended for use as clamp, snubber and freewheeling diode in a fly back aux power supplies, bootstrap and desaturate for HV MOSFET and IGBT driver, high frequency rectifiers in a cuk and sepic circuit for LED lighting.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element.

MECHANICAL DATA

Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solder able per J-STD-002
Polarity: color band denotes cathode end

LINKS TO ADDITIONAL RESOURCES

• 3D Models
  
• Application Notes
  

Note
(1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual interface test method (TDIM)

Note
(1) Formula used: TC = TJ – (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 – D); IR at VR1 = rated V

Notes

1. diF/dt – rate of change of current through zero crossing
2. IRRM – peak reverse recovery current
3. trr – reverse recovery time measured from t0, crossing point of negative going IF, to point t10%, 0.1 IRRM
4. Qrr – area under curve defined by t0 and t10 %
   
5. di(rec)M/dt – peak rate of change of current during tb portion of trr

ORDERING INFORMATION TABLE

Device code

– Vishay Semiconductors product
– Circuit configuration: E = single diode
– 7 = FRED generation 7
– M = SMA package
– Process type, H = hyperfast recovery
– Current rating (01 = 1 A)
– Voltage code (12 = 1200 V)
  – M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free

 DIMENSIONS

SMA

Disclaimer

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 CUSTOMER SUPPORT

For technical questions, contact:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000