MS-BTD020R Industrial Dual-Mode Bluetooth Module
Product Information
Specifications
- Bluetooth Version: EDR2.0+ BLE5.0
- Peripheral Interfaces:
- UART x2
- PWM x9
- I2C x1
- Protocols Supported: SPP, HID, GATT, ATT, GAP
- Maximum Transmit Power: 6dBm
- Maximum Data Transfer: 50Kbyte/s
- Standby Power Consumption: 2.0uA
- Operating Voltage: 3.0~3.6V
- Operating Temperature: -40 to +85°C
- Package Size: 15mm x 12mm x 2mm
Product Usage Instructions
1. Module Introduction
The MS-BTD020R industrial-grade dual-mode Bluetooth module is
based on dual-mode BR/EDR and LE series industrial-grade low-power
Bluetooth chips. It supports various profiles such as SPP, HID,
GATT, and ATT. The module utilizes UART as the programming
interface, allowing users to configure it using AT commands.
2. Key Features
The module features:
- Fully compatible with low-power Bluetooth 5.0 and below
standards - Based on EDR+LE dual-mode Bluetooth processor
- Peripheral Interfaces: UART x2, PWM x9, I2C x1
- Support for online simulation and debugging
- Maximum transmit power of 6dBm
- Maximum data transfer rate of 50Kbyte/s
- Standby power consumption of 2.0uA
3. Applications
The MS-BTD020R module is suitable for applications in handheld
terminals, medical devices, automotive electronics, and more.
FAQ
Q: What are the supported protocols by the MS-BTD020R
module?
A: The module supports SPP, HID, GATT, ATT, and GAP
protocols.
Q: What is the maximum data transfer rate of the module?
A: The maximum data transfer rate supported by the module is
50Kbyte/s.
Q: What is the standby power consumption of the MS-BTD020R
module?
A: The standby power consumption of the module is 2.0uA.
Dat asheet
MS-BTD020R Industrial Dual-Mode Bluetooth Module Based on classic Bluetooth EDR2.0+ BLE5.0 industrial grade low power Bluetooth chip
Version V1.1
0
1 Modul e I nt r oduct i on
1.1 Gener al Descr i pti on
MS-BTD020R industr ial gr ade dual-mode Bluetooth module is developed based on dual-mode BR/ EDR and LE ser ies industr ial gr ade low-power Bluetooth chips, which suppor ts SPP, HID, GATT, ATT and other pr of iles.MS-BTD020R def aults to use UART as the pr ogr amming inter f ace, and the user can use the AT commands to r ead or wr ite the conf igur ation of the module via UART.
1.2 Key Featur es
Fully compatible with low-power Bluetooth 5.0 and below standar ds Based on EDR+LE dual mode Bluetooth pr ocessor 2.4GHz Bluetooth RF Tr ansceiver Per ipher al Inter f ace:
UART x2Suppor ts up to 4M baud r ate PWM x9 I2C x1 Suppor ts online simulation and debugging Pr otocols suppor ted: SPP, HID, GATT, ATT, GAP Maximum tr ansmit power 6dbm Maximum data tr ansf er 50Kbyte/s Standby power consumption 2.0uA
1.3 Appli cati ons
Industr ial Instr umentation Bluetooth® pr inter Bluetooth POS
www.mesoonrf.cn
Handheld ter minals Medical devices Automotive electr onics
Par amet er s Bl uet oot h® ver si on
MS- BTD020R BR / EDR & LE5. 0
Ant ennas
Fr equency r anges Thr oughput Aut put power
Recept i on sensi t i vi t y
Cer ami c Ant enna / Ext er nal Ant enna
2. 402 ~ 2. 480 GHZ 50Kbyt e/ s +6dBm
1/ 2/ 3Mbps: – 93dBm
RF Tr ansmi t t er Cur r ent @0 dBm
Radi o Fr equency Recei ver Cur r ent
VDD=3. 3V, 17. 9mA VDD=3. 3V, 18. 5mA
Per i pher al i nt er f aces
GPI O: 20 ADC: 5- channel 10- bi t
pr eci si on PWM: 9 UART up t o 4M baud r at e
Fl ash Suppl y Vol t age Oper at i ng t emper at ur es
512 KB 3. 0~3. 6 V
– 40 t o +85
( i ndust r i al gr ade)
Package Si ze
15mm* 12mm* 2mm
Page1
Table of contents
1 Modul e I nt r oduct i on………………………………………………………………………………………………………….. 1 1. 1 Gener al Descr i pt i on……………………………………………………………………………………………………………..1 1. 2 Key F eat u r es ……………………………………………………………………………………………………………………..1 1. 3 App l i c at i o n s ……………………………………………………………………………………………………………………..1 1. 4 Key par amet er s………………………………………………………………………………………………………………………1 2 Pr oduct Feat ur es ………………………………………………………………………………………………………………… 3 2. 1 Syst em Bl ock Di agr am…………………………………………………………………………………………………………..3 2. 2 Pi n Char act er i st i cs……………………………………………………………………………………………………………..4 3 El ect r i cal Char act er i st i cs……………………………………………………………………………………………..6 3. 1 Maxi mumOper at i onRat i ng………………………………………………………………………………………………………..6 3. 2 Recommended Oper at i ng Condi t i on………………………………………………………………………………………..6 3. 3 RF ………………………………………………………………………………………………………………………………………….6 4 Har dwar e Desi gn…………………………………………………………………………………………………………………….6 4. 1 Ref er ence Schemat i cs……………………………………………………………………………………………………………6 4. 2 Power Suppl y Desi gn…………………………………………………………………………………………………………..7 4. 3 Layout Gui del i nes………………………………………………………………………………………………………………….7 4. 4 Mechani cal Det ai l s……………………………………………………………………………………………………………….8 5 Mechani cal Det ai l s………………………………………………………………………………………………………………8
5. 1 St or age Condi t i ons…………………………………………………………………………………………………………………8
5. 2 Baki ng Condi t i ons…………………………………………………………………………………………………………………..8
5. 3 Ref l ow Sol der i ng…………………………………………………………………………………………………………………….8
5. 4 Package Speci f i cat i ons………………………………………………………………………………………………………..10
6 Release Hi stor y………………………………………………………………………………………………………………………10
www.mesoonrf.cn
Page2
2 Pr oduct Feat ur es
2.1 Syst em Bl ock Di agr am
MS- BTD020R i ndust r i al dual – mode Bl uet oot h modul e i s an embedded wi r el ess communi cat i on modul e based on dual – mode BR / EDR and LE i ndust r i al – gr ade l ow- power Bl uet oot h chi p devel opment , can si mul t aneousl y suppor t SPP, HI D, GATT, ATT pr ot ocol s, UART mast er – sl ave ser i al por t t hr ough t he UART, SPP t r ansmi ssi on speed of up t o 50KB / s; wi t h l ow- power , st r ong si gnal , hi gh r el i abi l i t y, I t i s char act er i zed by l ow power consumpt i on, st r ong si gnal , hi gh r el i abi l i t y, hi gh cost – ef f ect i veness and so on. Thi s modul e i nt egr at es MCU, wi r el ess RF t r anscei ver , Bl uet oot h 5. 0 and ot her pr ot ocol s, user s onl y need t o pr ovi de 3. 3v power suppl y t o t he Bl uet oot h modul e t o r un i ndependent l y.
MS- BTD020R i ndust r i al – gr ade dual – mode Bl uet oot h modul e pr ovi des a var i et y of st andar d i nt er f aces f or user conveni ence, i ncl udi ng GPI O, UART, SPI , I 2C, PWM, et c. , and al so pr ovi des AT commands f or easy user oper at i on and i nt egr at i on i nt o t he f i nal pr oduct ; sui t abl e f or use i n i ndust r i al i nst r ument at i on, Bl uet oot h pr i nt er s, scanner guns smar t home, i ndust r i al I nt er net of Thi ngs and ot her appl i cat i ons.
Figure 1 Functional module architecture diagram www.mesoonrf.cn
Page3
2.2 Pi n Char act er i st i cs
Pi n 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
www.mesoonrf.cn
Figure 2 Bluetooth module pin diagram
Name GND VDD PWRKEY IO3 NC NC IO7 VPP IO14 IO15 IO0 IO1 CTS IO22 RTS DP DM IO34 RESET IO6/RX IO5/TX IO35
Ty pe Vss Power — GPIO — — GPIO — GPIO GPIO GPIO GPIO
Fl ow cont r ol
GPIO
Fl ow cont r ol
Bur n Fi r mwar e Bur n Fi r mwar e
GPIO RST Input Out put GPIO
Descr i pt i on Power Gr ound Power Suppl y1.8~3.6V
— Gener al Pur pose I/O
— — Gener al Pur pose I/O — Gener al Pur pose I/O Gener al Pur pose I/O Gener al Pur pose I/O Gener al Pur pose I/O — Gener al Pur pose I/O
— — — Gener al Pur pose I/O Power -on Reset Uar t Dat a Input 3.3TTL Uar t Dat a Out put 3.3TTL Gener al Pur pose I/O
Page4
23
IO36
24
IO40
25
IO41
26
IO42
27
IO43
28
IO44
29
GND
30
ANT
GPIO GPIO GPIO GPIO GPIO GPIO Vss Ant ennas
Gener al Pur pose I/O Gener al Pur pose I/O Gener al Pur pose I/O Gener al Pur pose I/O Gener al Pur pose I/O Gener al Pur pose I/O
Power Gr ound —
Table 1 Pin Descr iption
3 El ect r i cal Char act er i st i cs
3.1 Maxi mum Oper at i on Rat i ng
Par ameter s VDD voltage Oper ating temper atur e
Symbol VDD TOT
Min. 3.0 -40
Typic al 3.3 25
Max. 3.6 +85
Unit V
°C
Notes
Table 2 Absolute max. oper ating r atings
Note:
1. At r oom t emper at ur e. 2. Maxi mum Rat i ngs ar e t hose val ues beyond whi ch damage t o t he devi ce may occur . 3. Exposur e t o t hese condi t i ons or condi t i ons beyond t hose i ndi cat ed may adver sel y af f ect devi ce r el i abi l i t y. 4. Funct i onal oper at i on under absol ut e maxi mum- r at ed condi t i ons i s not i mpl i ed and shoul d be r est r i ct ed t o t he Recommended Oper at i ng Condi t i ons.
Par ameter s TX RF Cur r ent @Pout = 0dBm RX RF Cur r ent @Sensitivity level
Supply Cur r ent @ Sleep Supply Cur r ent @ Deep Sleep
Symbol
ISLEEP IPD
Min. Typical
17.9
18.5
–
100
–
2.0
MAX.
–
Table 3 DC char act er i st i cs
Unit mA mA µA µA
Notes VDD = 3.3V VDD = 3.3V
Par ameter s Stor age Temper atur es Lead-f r ee Solder Temper atur e
Symbol TS
Min. Typical
-40
–
TP
–
–
Table 4 Temper atur e r ange
MAX. 150 260
Unit °C °C
Notes
www.mesoonrf.cn
Page5
3.2 Recommended Oper at i ng Condi t i ons
Par ameter s
Symbol Min. Typical
MAX.
Unit
Notes
Ambient Temper atur e
TA
-40
25
85
°C
Power Supply Voltage VDD
3.0
3.3
3.6
V Buck DCDC Power input supply
Table 5 Recommended Oper ating Conditions
Note: It does not guar antee the per f or mance if the oper ating temper atur e is beyond the specif ied
3.3 RF
Par ameter s Antennae
Fr equency r ange Data tr ansf er r ate Maximum data tr ansf er volume RF r eception sensitivity RF maximum output power
Numer ical Values PCB on boar d antenna
2.402 ~ 2.480 GHZ 1Mbps,2Mbps ,3Mbps
SPP 50KB/s 1/2/3Mbps:-93dBm
Max. 6dBm+
4 Har dwar e Desi gn
Do not place metal obj ects or r oute ar ound the antenna 2mm, it is r ecommended to hollow out the under side of the antenna. As metal has a shielding ef f ect on electr omagnetic signals, tr y to avoid using metal enclosur es.
4.1 Ref er ence Schemat i cs
www.mesoonrf.cn
Page6
4.2 Power Suppl y Desi gn
Note: MS-BTD020R-L Bluetooth module has cer tain r equir ements f or the power supply cir cuit. The r ipple coef f icient of the 3.3V supply voltage should be less than 200mV, the minimum output cur r ent should be gr eater than 20mA (the choice of the 3.3V r egulator needs to be deter mined by the actual cir cuit cur r ent).
4.3 Layout Gui del i nes
It is str ongly r ecommended to use good layout pr actices to ensur e pr oper module oper ation, placing copper or any metal close to the antenna will af f ect antenna per f or mance and thus deter ior ate antenna ef f iciency. The metal shielding ar ound the antenna will stop the signal f r om r adiating, ther ef or e metal enclosur es should not be used with the module, please use mor e gr ound over holes at the edge of the gr ounded ar ea, the f ollowing r ecommendations will help to avoid EMC pr oblems in the design.
Please note that each design is unique, the f ollowing descr iptions do not take into account all basic design r ules, such as avoiding capacitive coupling between signal lines; the f ollowing descr iptions ar e intended to avoid EMC pr oblems caused by the RF par t of the module and should be consider ed with car e, to avoid pr oblems with the digital signals in the design. Ensur e that the loops of the signal lines ar e as shor t as possible.
E.g.: If the signal enter s the inner layer via the thr ough-holes, always use gr ound thr ough-holes ar ound the pads. And place them closely and symmetr ically ar ound the signal thr ough-holes. Any sensitive signal r outing and loops should be done on the inner layer of the PCB as f ar as possible. Sensitive signal lines should have a gr ound sur r ound above and below them. Make sur e that the r etur n path is the shor test possible (e.g. use a gr ound wir e next to the signal wir e).
www.mesoonrf.cn
Page7
4.4 Mechani cal Det ai l s
Module Nominal Size:15mmL× 12mmW× 2mmH Toler ance±0.2mm Pad r adius R:0.35mm Pad pitch:1.5mm
5 Pr oduct Tr eat ment
5.1 St or age Condi t i ons
Pr oducts sealed in moistur e-pr oof bags (MBB) should be stor ed in a non-condensing atmospher e at 40 °C/90% RH. The module has a moistur e sensitivity class MSL of 3. Af ter unpacking the vacuum bag, it must be used within 168 hour s at 25±5 °C and 60% RH, other wise it needs to be baked bef or e it can be put on line a second time.
5.2 Baki ng Condi t i ons
Modules must be baked at 120+5°C f or 8 hour s, the second-baked module must be solder ed within 24 hour s af ter baking, other wise they must still be stor ed in the dr ying oven.
5.3 Ref l ow Sol der i ng
Bef or e any r ef low solder ing is car r ied out, it is impor tant to ensur e the modules ar e packaged in moistur e-pr oof package. The package contains a desiccant (to absor b moistur e) and a humidity indicator car d to show the level of dr yness to be maintained dur ing stor age and shipment. If it is necessar y to bake the module, please check the table below and f ollow the instr uctions specif ied in IPC / JEDEC J-STD-033.
www.mesoonrf.cn
Page8
Note: The tr ay must not be heated above 65°C. If the high temper atur e baking method (above 65°C) in the table below is used, the module must be r emoved f r om the tr ay. Any module that has been unpacked and not sur f ace mounted within a specif ied time should be r epackaged. Ef f ective desiccants and humidity indicator car ds should be placed inside the package. MSL (moistur e sensitivity level) 3 modules should be stor ed in the air f or less than 168 hour s at an ambient temper atur e of 30°C / 60% RH. The r ecommended baking time and temper atur e ar e as f ollows: The design of sur f ace mount modules is easy to manuf actur e, including r ef low solder ing to the PCB main boar d. Ultimately, it is the r esponsibility of the customer to choose the appr opr iate solder paste and ensur e that the f ur nace temper atur e dur ing r ef low meets the r equir ements of the solder paste. Sur f ace mount modules conf or m to the J-STD-020D1 standar d f or r ef low solder ing temper atur es. The solder ing conf igur ation f ile depends on the var ious par ameter s that need to be set f or each application. The data her e is only used f or r ef low solder ing guidance.
Pr e-heat zone (A) – This zone is heated up at a contr olled r ate, typically 0.5-2°C / s. The pur pose of this zone is to pr eheat the PCB boar d and components to 120 to 150°C. This stage is r equir ed to distr ibute the heat evenly acr oss the PCB boar d and to completely r emove the solvent to r educe ther mal shock to the component.
www.mesoonrf.cn
Page9
Equilibr ium Zone 1 (B) – Dur ing this stage the f lux becomes sof t and evenly encapsulates the solder par ticles and spr eads them acr oss the PCB boar d to pr event them f r om being r e-oxidized. As the temper atur e incr eases and the f lux liquef ies, each activator and r osin is activated and begins to r emove the oxide f ilm that has f or med on each solder pellet and the PCB boar d sur f ace. For this ar ea, temper atur es of 150° to 210° and times of 60 to 120 seconds ar e r ecommended. Equilibr ium zone 2 (C) (optional) – To solve the pr oblem of upr ight par ts it is r ecommended to keep the temper atur e at 210 – 217 f or appr oximately 20 to 30 seconds. Ref low zone (D) – The cur ve shown is designed f or Sn / Ag3.0 / Cu0.5. It can be used as a r ef er ence f or other lead-f r ee solder s. The peak temper atur e should be high enough to achieve good wettability, but not so high as to cause discolor ation or damage to the component. Too long a solder ing time can lead to inter metallic gr owth which can r esult in br ittle solder j oints. The r ecommended peak temper atur e (Tp) is 230 to 250°C. At temper atur es above 217°C, the solder ing time should be 30 to 90 seconds. Cooling Zone (E) – The cooling r ate should be ver y f ast to keep the solder gr ains small, which will pr ovide a longer lasting solder j oint. A typical cooling r ate should be 4°C.
5.4 Package Speci f i cati ons
Tr ay package: Min. package 3000pcs Tr ay size: 50pcs/tr ay
6 Rel ease Hi st or y
Ver sion number
1. 0 1. 1
Date
2023. 11. 15 2024. 09. 03
descr iption New constr uction
Modi f yi ng Pi n Def i ni t i ons
www.mesoonrf.cn
Page10
FCC Caution:
Any changes or modifications not expressly approved by the party responsible for compliance could void the user’s authority to operate this equipment.
This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) this device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation. This device and its antenna(s) must not be co-located or operating in conjunction with any other antenna or transmitter.
NOTE: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more of the following measures: — Reorient or relocate the receiving antenna. — Increase the separation between the equipment and receiver. — Connect the equipment into an outlet on a circuit different from that to which the receiver is connected. — Consult the dealer or an experienced radio/TV technician for help. The device has been evaluated to meet general RF exposure requirement. The device can be used in portable exposure condition without restriction.
Page 13
Shenzhen MesoonRF IoT Technology Co.,Ltd. el.+86 0755-2376 4945
1106 Henglin Building, Baoyuan Road, Fishery Community, Xixiang Street, Bao’an District, Shenzhen, Guangdong, China
Documents / Resources
 |
MesoonRF MS-BTD020R Industrial Dual-Mode Bluetooth Module [pdf] Instruction Manual MS-020018, 2BK8T-MS-020018, MS-BTD020R Industrial Dual-Mode Bluetooth Module, MS-BTD020R, Industrial Dual-Mode Bluetooth Module, Dual-Mode Bluetooth Module, Bluetooth Module, Module |