Product Disclaimer for Littelfuse Electronic Components
Owner's Manual for IXYS models including: DSEI2x61-02A FRED Fast Recovery Epitaxial Diode, DSEI2x61-02A, FRED Fast Recovery Epitaxial Diode, Fast Recovery Epitaxial Diode, Recovery Epitaxial Diode, Epitaxial Diode, Diode
DSEI2X61-02A IXYS - RADIOMAG GmbH
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DocumentDocumentFRED Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x61-02A 2 1 3 4 DSEI2x61-02A VRRM I FAV t rr = 200 V = 2x 60 A = 20 ns Backside: isolated Features / Advantages: Planar passivated chips Low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Package: SOT-227B (minibloc) Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b Downloaded from Arrow.com. DSEI2x61-02A Fast Diode Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current forward voltage drop average forward current VR = 200 V VR = 160 V IF = 60 A IF = 120 A IF = 60 A IF = 120 A TC = 100°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM CJ I RM t rr threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance max. reverse recovery current t = 10 ms; (50 Hz), sine; VR = 0 V VR = 200 V f = 1 MHz reverse recovery time IF = 70 A; VR = 100 V -diF/dt = 400 A/µs TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 150 °C TVJ = 150°C Ratings min. typ. max. Unit 200 V 200 V 50 µA 11 mA 1.07 V 1.25 V 0.91 V 1.15 V 60 A TVJ = 150°C TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 100 °C TVJ = 25 °C TVJ = 100 °C 0.69 V 3.7 m 0.7 K/W 0.10 K/W 180 W 950 A 170 pF 6.5 A 11 A 20 ns 50 ns IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b DSEI2x61-02A Package SOT-227B (minibloc) Ratings Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature Conditions per terminal min. typ. max. Unit 150 A -40 150 °C -40 125 °C -40 150 °C 30 g MD M T d Spp/App d Spb/Apb V ISOL mounting torque 1.1 terminal torque 1.1 creepage distance on surface | striking distance through air terminal to terminal 10.5 3.2 terminal to backside 8.6 6.8 isolation voltage t = 1 second t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 3000 2500 1.5 Nm 1.5 Nm mm mm V V Logo Date Code Product Marking Part Number XXXXX ® UL yywwZ 123456 Location Lot# Ordering Standard Ordering Number DSEI2x61-02A Marking on Product DSEI2x61-02A Delivery Mode Tube Quantity Code No. 10 469769 Equivalent Circuits for Simulation I V0 R0 V 0 max R0 max threshold voltage slope resistance * Fast Diode 0.69 1.8 * on die level T VJ = 150°C V m IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b Outlines SOT-227B (minibloc) DSEI2x61-02A 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b DSEI2x61-02A Fast Diode 120 0.8 100 80 IF 60 [A] 40 20 TVJ = 150°C 100°C 25°C IF = 140 A 0.6 70 A 35 A Qr 0.4 [µC] TVJ = 100°C VR = 100 V 0.2 0 0.0 0.4 0.8 1.2 VF [V] Fig. 1 Forward current IF versus max. forward voltage drop VF 0.0 10 100 1000 -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 30 25 20 IRM 15 [A] 10 5 IF = 140 A 70 A 35 A TVJ = 100°C VR = 100 V 0 0 200 400 600 800 1000 -diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM versus -diF /dt 1.6 1.4 1.2 1.0 Kf 0.8 0.6 IRM 0.4 Qrr 0.2 0 40 80 120 160 TVJ [°C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 70 TVJ = 100°C VR = 100 V 60 trr 50 [ns] 40 IF = 140 A 70 A 35 A 30 0 200 400 600 800 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt 5 2.5 TVJ = 100°C VR = 100 V 4 2.0 VFR 3 [V] 2 VFR 1 1.5 tfr 1.0 tfr [µs] 0.5 0 0.0 0 200 400 600 800 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 0.8 0.6 ZthJC 0.4 [K/W] 0.2 Constants for ZthJC calculation: i Rthi (K/W) ti (s) 1 0.120 0.010 2 0.045 0.002 3 0.105 0.050 4 0.160 0.050 5 0.270 0.350 0.0 1 10 100 1000 t [ms] Fig. 7 Transient thermal impedance junction to case 10000 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201009b Downloaded from Arrow.com.