Owner's Manual for VISHAY models including: IRFPE50 Power MOSFET, IRFPE50, Power MOSFET, MOSFET

IRFPE50PBF - РАДИОМАГ РКС КОМПОНЕНТЫ Виробник: Vishay Trans MOSFET N-CH 800V 7.8A 3-Pin(3 Tab) TO-247AC

IRFPE50PBF - РАДИОМАГ РКС КОМПОНЕНТЫ

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IRFPE50
Vishay Siliconix

Power MOSFET

D TO-247AC

S
D G

G
S N-Channel MOSFET

PRODUCT SUMMARY

VDS (V) RDS(on) () Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration

800

VGS = 10 V

1.2

200

24

110

Single

FEATURES

· Dynamic dV/dt rated

· Repetitive avalanche rated

· Isolated central mounting hole

Available

· Fast switching

· Ease of paralleling

· Simple drive requirements

· Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION
Package Lead (Pb)-free

TO-247AC IRFPE50PbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor

VDS

VGS

VGS at 10 V

TC = 25 °C TC = 100 °C

ID

IDM

Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c

TC = 25 °C

EAS IAR EAR PD dV/dt

Operating junction and storage temperature range

Soldering recommendations (peak temperature)

for 10 s

TJ, Tstg

Mounting torque

6-32 or M3 screw

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 , IAS = 7.8 A (see fig. 12) c. ISD  7.8 A, dI/dt  140 A/s, VDD  600 V, TJ  150 °C d. 1.6 mm from case

LIMIT 800 ± 20 7.8 4.9 31 1.5 770 7.8 19 190 2.0
-55 to +150 300 d 10 1.1

UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N · m

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IRFPE50
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain)

RthJA RthCS RthJC

TYP. -
0.24 -

MAX. 40 0.65

UNIT °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Static

Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic

VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs

VGS = 0 V, ID = 250 A

Reference to 25 °C, ID = 1 mA

VDS = VGS, ID = 250 A

VGS = ± 20 V

VDS = 800 V, VGS = 0 V

VDS = 640 V, VGS = 0 V, TJ = 125 °C

VGS = 10 V

ID = 4.7 A b

VDS = 100 V, ID = 4.7 A b

Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time

Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf

VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5

VGS = 10 V

ID = 7.8 A, VDS = 400 V, see fig. 6 and 13 b

VDD = 400 V, ID = 7.8 A, Rg = 6.2 , RD= 52  see fig. 10 b

Internal drain inductance Internal source inductance

LD

Between lead, 6 mm (0.25") from

D

package and center of G

LS

die contact

S

Drain-Source Body Diode Characteristics

MIN.
800 2.0 5.6
-
-
-

TYP. MAX. UNIT

-

-

V

0.98

-

V/°C

-

4.0

V

- ± 100 nA

-

100

A

-

500

-

1.2



-

-

S

3100

-

800

-

pF

490

-

-

200

-

24

nC

-

110

19

-

38

-

ns

120

-

39

-

5.0

-

nH

13

-

Continuous source-drain diode current Pulsed diode forward current a

IS

MOSFET symbol

showing the

integral reverse

D G

-

-

7.8

A

ISM

p - n junction diode

S

-

-

31

Body diode voltage

VSD

TJ = 25 °C, IS = 7.8 A, VGS = 0 V b

-

-

1.8

V

Body diode reverse recovery time Body diode reverse recovery charge

trr

TJ = 25 °C, IF = 7.8 A,

Qrr

dI/dt = 100 A/s b

-

650 980 ns

-

3.8

5.7

C

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 s; duty cycle  2 %.

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www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFPE50
Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

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IRFPE50
Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

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Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFPE50
Vishay Siliconix

VDS VGS RG

RD D.U.T.

10 V
Pulse width  1 µs Duty factor  0.1 %

+- VDD

Fig. 10 - Switching Time Test Circuit

VDS 90 %

10 % VGS

td(on) tr

td(off) tf

Fig. 11 - Switching Time Waveforms

Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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VDS Vary tp to obtain required IAS
RG
10 V tp

L
D.U.T IAS
0.01 

+ - VDD

Fig. 13 - Unclamped Inductive Test Circuit

IRFPE50
Vishay Siliconix

VDS

VDS
tp VDD

IAS Fig. 14 - Unclamped Inductive Waveforms

Fig. 15 - Maximum Avalanche Energy vs. Drain Current

10 V QGS
VG

QG QGD

Charge

Fig. 16 - Basic Gate Charge Waveform

Current regulator Same type as D.U.T.

12 V

50 k

0.2 µF

0.3 µF

+ D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 17 - Gate Charge Test Circuit

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D.U.T.
+ -

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

· Low stray inductance

· Ground plane

· Low leakage inductance

current transformer

-

-

+

IRFPE50
Vishay Siliconix

Rg

· dV/dt controlled by Rg

+

· Driver same type as D.U.T. · ISD controlled by duty factor "D"

- VDD

· D.U.T. - device under test

Driver gate drive

P.W.

Period

D =

P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse

recovery current

Body diode forward current dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt VDD

Re-applied voltage

Body diode forward drop Inductor current

Ripple  5 %

ISD

Note a. VGS = 5 V for logic level devices

Fig. 18 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91248.

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Package Information
Vishay Siliconix

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

DIM. A A1 A2 b b1 b2 b3 b4 b5 c c1 D

MILLIMETERS

MIN.

NOM.

4.83

5.02

2.29

2.41

1.17

1.27

1.12

1.20

1.12

1.20

1.91

2.00

1.91

2.00

2.87

3.00

2.87

3.00

0.40

0.50

0.40

0.50

20.40

20.55

MAX. 5.21 2.55 1.37 1.33 1.28 2.39 2.34 3.22 3.18 0.60 0.56 20.70

NOTES
6 6, 8
6 4

DIM. D1 D2 E E1 E2 e L L1 Ø P Ø P1 Q S

MIN. 16.46 0.56 15.50 13.46 4.52
14.90 3.96 3.56
5.31

MILLIMETERS NOM. 16.76 0.66 15.70 14.02 4.91
5.46 BSC 15.15 4.06 3.61 7.19 ref. 5.50
5.51 BSC

MAX. 17.06 0.76 15.87 14.16 5.49
15.40 4.16 3.65
5.69

NOTES 5
4 5 3
6 7

Notes
(1) Package reference: JEDEC® TO247, variation AC (2) All dimensions are in mm (3) Slot required, notch may be rounded (4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body (5) Thermal pad contour optional with dimensions D1 and E1 (6) Lead finish uncontrolled in L1 (7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm (8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition

Revision: 31-Oct-2022

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Document Number: 91360

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VERSION 2: FACILITY CODE = Y

B 3 R/2
Q

4 E
E/2 S

2 x R

(2)

D

12

3

5 L1

C

L

2 x b2

3 x b

2x e

b4

0.10 M C A M

Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain

See view B

Package Information
Vishay Siliconix

A A2 A
4
D

A 7 ØP Ø k M DBM
D2

(Datum B) ØP1
4 D1

4 Thermal pad

A C A1
D DE E CC
View B

Planting

4 E1 0.01 M D B M View A - A
(b1, b3, b5)

Base metal

(c)

c1

(b, b2, b4) (4)
Section C - C, D - D, E - E

DIM. A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1

MILLIMETERS

MIN.

MAX.

4.58

5.31

2.21

2.59

1.17

2.49

0.99

1.40

0.99

1.35

1.53

2.39

1.65

2.37

2.42

3.43

2.59

3.38

0.38

0.86

0.38

0.76

19.71

20.82

13.08

-

NOTES

DIM. D2 E E1 e Ø k L L1 Ø P Ø P1 Q R S

MILLIMETERS

MIN.

MAX.

0.51

1.30

15.29

15.87

13.72

-

5.46 BSC

0.254

14.20

16.25

3.71

4.29

3.51

3.66

-

7.39

5.31

5.69

4.52

5.49

5.51 BSC

NOTES

Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c

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VERSION 3: FACILITY CODE = N

B R/2

E N

Q

R

S

D

Package Information
Vishay Siliconix

D2

A

A P1

P

A2

D

c1 D1

K M DBM

L1

C

b2 b

b4 e

0.10 M C A M

L

C A1
Base metal

E1 0.01 M D B M
b1, b3, b5

c

Plating

b, b2, b4

MILLIMETERS

MILLIMETERS

DIM.

MIN.

A

4.65

A1

2.21

A2

1.17

b

0.99

b1

0.99

b2

1.65

b3

1.65

b4

2.59

b5

2.59

c

0.38

c1

0.38

D

19.71

D1

13.08

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

MAX. 5.31 2.59 1.37 1.40 1.35 2.39 2.34 3.43 3.38 0.89 0.84 20.70
-

DIM. D2 E E1 e k L L1 N P P1 Q R S

MIN. 0.51 15.29 13.46
14.20 3.71
3.56 -
5.31 4.52

5.46 BSC 0.254
7.62 BSC
5.51 BSC

MAX. 1.35 15.87
-
16.10 4.29
3.66 7.39 5.69 5.49

Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

Revision: 31-Oct-2022

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Document Number: 91360

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Disclaimer

Legal Disclaimer Notice
Vishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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References

• applications.no
• vishay.com/doc?91000
• IRFPE50 Power MOSFET | Vishay