Owner's Manual for GeneSiC models including: G3R350MT12D Silicon Carbide MOSFET, G3R350MT12D, Silicon Carbide MOSFET, Carbide MOSFET, MOSFET
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DocumentDocumentG3R350MT12D 1200 V 350 m SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features · G3RTM (3rd Generation) Technology · Low Temperature Coefficient of RDS(ON) · Lower QG and Smaller RG(INT) · Low Device Capacitances (COSS, CRSS) · LoRingTM - Electromagnetically Optimized Design · Superior Cost-Performance Index · Robust Body Diode with Low VF and Low QRR · 100% Avalanche (UIL) Tested Advantages · Compatible with Commercial Gate Drivers · Low Conduction Losses at all Temperatures · Faster and More Efficient Switching · Lesser Switching Spikes and Lower Losses · Reduced Ringing · Better Power Density and System Efficiency · Ease of Paralleling without Thermal Runaway · Superior Robustness and System Reliability TM Package TO-247-3 VDS = RDS(ON)(Typ.) = ID (TC = 100°C) = 1200 V 350 m 7 A D G S D = Drain G = Gate S = Source RoHS REACH Applications · Auxiliary Power Supply · Solar Inverters · UPS · High Voltage DC-DC Converters · Switched Mode Power Supplies · Auxiliary Motor Drives · High Frequency Converters Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) Parameter Drain-Source Voltage Gate-Source Voltage (Dynamic) Gate-Source Voltage (Static) Continuous Forward Current Pulsed Drain Current Power Dissipation Non-Repetitive Avalanche Energy Operating and Storage Temperature Symbol VDS(max) VGS(max) VGS(op)-ON VGS(op)-OFF I D ID(pulse) P D EAS Tj , Tstg Conditions VGS = 0 V, ID = 100 µA Recommended Operation TC = 25°C, VGS = -5 / +15 V TC = 100°C, VGS = -5 / +15 V TC = 135°C, VGS = -5 / +15 V tP 3µs, D 1%, VGS = 15 V, Note 1 Tc = 25°C L = 21.5 mH, IAS = 2.0 A Values 1200 -10 / +22 +15 to +18 -5 to -3 10 7 5 16 63 43 -55 to 175 Unit Note V V V A Fig. 15 A Fig. 14 W Fig. 16 mJ °C Thermal/Package Characteristics Parameter Thermal Resistance, Junction - Case Weight Mounting Torque Symbol RthJC W T T M Conditions Screws to Heatsink Values Unit Note Min. Typ. Max. 2.4 °C/W Fig. 13 6.1 g 1.1 Nm Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 1 of 14 G3R350MT12D TM 1200 V 350 m SiC MOSFET Electrical Characteristics (At TC = 25°C Unless Otherwise Stated) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Gate Threshold Voltage Transconductance Drain-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Coss Stored Energy Coss Stored Charge Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) Gate-Source Charge Gate-Drain Charge Total Gate Charge Internal Gate Resistance Turn-On Switching Energy (Body Diode) Turn-Off Switching Energy (Body Diode) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Symbol VDSS IDSS IGSS VGS(th) gfs RDS(ON) Ciss Coss Crss Eoss Qoss Co(er) Conditions VGS = 0 V, ID = 100 µA VDS = 1200 V, VGS = 0 V VDS = 0 V, VGS = 22 V VDS = 0 V, VGS = -10 V VDS = VGS, ID = 2.0 mA VDS = VGS, ID = 2.0 mA, Tj = 175°C VDS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A, Tj = 175°C VGS = 15 V, ID = 4 A VGS = 15 V, ID = 4 A, Tj = 175°C VGS = 18 V, ID = 4 A VGS = 18 V, ID = 4 A, Tj = 175°C VDS = 800 V, VGS = 0 V f = 1 MHz, VAC = 25mV Values Min. Typ. Max. 1200 1 100 -100 1.8 2.70 2.05 1.8 2.1 350 489 270 359 424 331 10 0.8 4 15 12 Co(tr) 19 Qgs VDS = 800 V, VGS = -5 / +15 V 3 Qgd ID = 4 A 3 Q g Per IEC607478-4 10 RG(int) f = 1 MHz, VAC = 25 mV 2.5 EOn Tj = 25°C, VGS = -5/+15V, RG(ext) = 15 , L = 33 EOff 400.0 µH, ID = 4 A, VDD = 800 V 6 td(on) 14 t r td(off) VDD = 800 V, VGS = -5/+15V RG(ext) = 15 , L = 400.0 µH, ID = 4 A Timing relative to VDS, Inductive load 10 10 t f 7 Note 1: Pulse Width tP Limited by Tj(max) Note 2: Co(er), a lumped capacitance that gives same stored energy as COSS while VDS is rising from 0 to 800V. Co(tr), a lumped capacitance that gives same charging times as COSS while VDS is rising from 0 to 800V. Unit Note V µA nA V Fig. 9 S Fig. 4 m Fig. 5-8 pF Fig. 11 µJ Fig. 12 nC pF Note 2 nC Fig. 10 µJ Fig. 22,26 ns Fig. 24 Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 2 of 14 G3R350MT12D TM 1200 V 350 m SiC MOSFET Reverse Diode Characteristics Parameter Symbol Diode Forward Voltage Continuous Diode Forward Current Diode Pulse Current Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current VSD I S IS(pulse) trr Qrr Irrm trr Qrr Irrm Conditions VGS = -5 V, ISD = 2 A VGS = -5 V, ISD = 2 A, Tj = 175°C VGS = -5 V, Tc = 100°C VGS = -5 V, Note 1 VGS = -5 V, ISD = 4 A, VR = 800 V dif/dt = 1500 A/µs, Tj = 25°C VGS = -5 V, ISD = 4 A, VR = 800 V dif/dt = 1500 A/µs, Tj = 175°C Values Min. Typ. Max. 4.8 4.3 4 16 7 14 1 12 35 3 Unit Note V Fig. 17-18 A A ns nC A ns nC A Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 3 of 14 G3R350MT12D 1200 V 350 m SiC MOSFET Figure 1: Output Characteristics (Tj = 25°C) TM Figure 2: Output Characteristics (Tj = 175°C) ID = f(VDS, VGS); tP = 250 µs Figure 3: Output Characteristics (VGS = 15 V) ID = f(VDS, VGS); tP = 250 µs Figure 4: Transfer Characteristics (VDS = 10 V) ID = f(VDS, Tj); tP = 250 µs ID = f(VGS, Tj); tP = 100 µs Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 4 of 14 G3R350MT12D 1200 V 350 m SiC MOSFET Figure 5: On-State Resistance v/s Temperature TM Figure 6: On-State Resistance v/s Drain Current RDS(ON) = f(Tj, VGS); tP = 250 µs; ID = 4 A RDS(ON) = f(Tj,ID); tP = 250 µs; VGS = 15 V Figure 7: Normalized On-State Resistance v/s Temperature Figure 8: On-State Resistance v/s Gate Voltage RDS(ON) = f(Tj); tP = 250 µs; ID = 4 A; VGS = 15 V RDS(ON) = f(Tj,VGS); tP = 250 µs; ID = 4 A Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 5 of 14 G3R350MT12D TM 1200 V 350 m SiC MOSFET Figure 9: Threshold Voltage Characteristics Figure 10: Gate Charge Characteristics VGS(th) = f(Tj); VDS = VGS; ID = 2.0 mA Figure 11: Capacitance v/s Drain-Source Voltage ID = 4 A; VDS = 800 V; Tc = 25°C Figure 12: Output Capacitor Stored Energy f = 1 MHz; VAC = 25mV Eoss = f(VDS) Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 6 of 14 G3R350MT12D 1200 V 350 m SiC MOSFET Figure 13: Transient Thermal Impedance TM Figure 14: Safe Operating Area (Tc = 25°C) Zth,jc = f(tP,D); D = tP/T Figure 15: Current De-rating Curve ID = f(VDS, tP); Tj 175°C; D = 0 Figure 16: Power De-rating Curve VGS = 15 V; ID = f(TC); Tj 175°C PD = f(TC); Tj 175°C Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 7 of 14 G3R350MT12D 1200 V 350 m SiC MOSFET Figure 17: Body Diode Characteristics (Tj = 25°C) TM Figure 18: Body Diode Characteristics (Tj = 175°C) ID = f(VDS, VGS); tP = 250 µs Figure 19: Third Quadrant Characteristics (Tj = 25°C) ID = f(VDS, VGS); tP = 250 µs Figure 20: Third Quadrant Characteristics (Tj = 175°C) ID = f(VDS, VGS); tP = 250 µs ID = f(VDS, VGS); tP = 250 µs Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 8 of 14 G3R350MT12D 1200 V 350 m SiC MOSFET Figure 21: Inductive Switching Energy v/s Drain Current (VDD = 600V) TM Figure 22: Inductive Switching Energy v/s Drain Current (VDD = 800V) Tj = 25°C; VGS = -5/+15V; RG(ext) = 15 ; L = 400.0µH Figure 23: Inductive Switching Energy v/s RG(ext) (VDD = 800V) Tj = 25°C; VGS = -5/+15V; RG(ext) = 15 ; L = 400.0µH Figure 24: Switching Time v/s RG(ext) (VDD = 800V) Tj = 25°C; VGS = -5/+15V; IDS = 4 A; L = 400.0µH Tj = 25°C; VGS = -5/+15V; IDS = 4 A; L = 400.0µH Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 9 of 14 G3R350MT12D TM 1200 V 350 m SiC MOSFET Figure 25: Inductive Switching Energy v/s Temperature (VDD = 800V) Figure 26: dV/dt v/s RG(ext) (VDD = 800V) Tj = 25°C; VGS = -5/+15V; RG(ext) = 15 ; IDS = 4 A; L = 400.0µH Tj = 25°C; VGS = -5/+15V; IDS = 4 A; L = 400.0µH Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 10 of 14 G3R350MT12D TM 1200 V 350 m SiC MOSFET Gate Charge Circuit Gate Charge Waveform VDS VGS D.U.T RLoad Gate Voltage (VGS) IG(cont) Switching Time Circuit ID VDD QGS QGD Gate Charge (QG) Switching Time Waveform Same device as the D.U.T. -5 V VGS RG LLoad VDS D.U.T. VDD VGS VDS 10% 10% 90% ID td(on) tr ton 90% 10% td(off) 90% tf toff Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 11 of 14 G3R350MT12D TM 1200 V 350 m SiC MOSFET Switching Energy Circuit Switching Energy Waveform Same device as the D.U.T. -5 V VGS RG LLoad VDS D.U.T. EOND xDS x dt Irr VDS VDD ID IDS EOFFD xDS x dt Reverse Recovery Circuit Reverse Recovery Waveform D.U.T. LLoad IF -5 V IF VGS RG 0 Level VDD Same device as the D.U.T. Irr trr 90% dIrr to 90% range 10% Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 12 of 14 G3R350MT12D TM 1200 V 350 m SiC MOSFET Package Dimensions TO-247-3 Package Outline 0.170 (4.32) 0.216 (5.49) 0.620 (15.75) 0.635 (16.13) 0.819 0.831 (20.80) (21.10) 0.085 (2.16) 0.108 (2.75) 0.212 (5.39) 0.244 (6.20) 0.780 0.800 (19.81) (20.32) 0.075 (1.91) 0.094 (2.39) 0.044 (1.12) 0.052 (1.33) 0.161 (4.10) 0.173 (4.40) 0.113 (2.87) 0.127 (3.22) 0.022 (0.55) 0.214 (5.44) BSC. 0.027 (0.69) 0.190 (4.83) 0.205 (5.21) 0.059 (1.50) 0.098 (2.49) 0.238 (6.04) 0.248 (6.30.) 0.530 (13.46) 0.557 (14.16) Ø 0.140 (3.56) Ø 0.144 (3.65) Ø 0.283 (7.19) REF 0.047 (1.19) 0.640 (16.25) 0.695 (17.65) 0.090 (2.29) 0.100 (2.55) Recommended Solder Pad Layout 0.12 (3.05) 0.214 (5.44) 0.08 (2.03) 0.214 (5.44) Package View Case (D) S G D NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS. Rev 23/Feb Downloaded from Arrow.com. Latest Version at: www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D.pdf Page 13 of 14 G3R350MT12D TM 1200 V 350 m SiC MOSFET Compliance RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS 2), as adopted by EU member states on January 2, 2013 and amended on March 31, 2015 by EU Directive 2015/863. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACH Compliance REACH substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACH SVHC Declaration. REACH banned substance information (REACH Article 67) is also available upon request. Disclaimer GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Related Links · SPICE Models: https://www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D_SPICE.zip · PLECS Models: https://www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D_PLECS.zip · CAD Models: https://www.genesicsemi.com/sic-mosfet/G3R350MT12D/G3R350MT12D_3D.zip · Gate Driver Reference: https://www.genesicsemi.com/technical-support · Evaluation Boards: https://www.genesicsemi.com/technical-support · Reliability: https://www.genesicsemi.com/reliability · Compliance: https://www.genesicsemi.com/compliance · Quality Manual: https://www.genesicsemi.com/quality Revision History · Rev 23/Feb: Updated with Most Recent Data · Supersedes: Rev 20/Jun, Rev 20/Aug, Rev 21/Jan, Rev 21/May www.genesicsemi.com/sic-mosfet/ Rev 23/Feb Copyright© 2023 GeneSiC Semiconductor Inc. All Rights Reserved. Downloaded from Arrow.com. Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155, Dulles, VA 20166; USA Page 14 of 14
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