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Owner's Manual for IXYS models including: DSEI60-10A Fast Recovery Epitaxial Diode Single Diode, DSEI60-10A, Fast Recovery Epitaxial Diode Single Diode, Recovery Epitaxial Diode Single Diode, Epitaxial Diode Single Diode, Diode Single Diode, Single Diode, Diode
DSEI60-10A IXYS - RADIOMAG GmbH
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DocumentDocumentFRED Fast Recovery Epitaxial Diode Single Diode Part number DSEI60-10A 3 1 DSEI60-10A VRRM = 1000 V I FAV = 60 A t rr = 45 ns Backside: cathode Features / Advantages: Planar passivated chips Low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Package: TO-247 Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201013a Downloaded from Arrow.com. DSEI60-10A Fast Diode Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current forward voltage drop average forward current VR = 1000 V VR = 800 V IF = 60 A IF = 120 A IF = 60 A IF = 120 A TC = 80°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM CJ I RM t rr threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance max. reverse recovery current t = 10 ms; (50 Hz), sine; VR = 0 V VR = 600 V f = 1 MHz reverse recovery time IF = 60 A; VR = 540 V -diF/dt = 300 A/µs TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 150 °C TVJ = 150°C Ratings min. typ. max. Unit 1000 V 1000 V 3 mA 14 mA 2.30 V 2.65 V 1.92 V 2.43 V 60 A TVJ = 150°C TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 100 °C TVJ = 25 °C TVJ = 100 °C 1.44 V 8 m 0.5 K/W 0.25 K/W 250 W 500 A 36 pF 15 A 23 A 100 ns 200 ns IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20201013a Package TO-247 Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Product Marking Conditions per terminal Logo Part Number Date Code Lot# Location IXYS XXXXXXXXX yywwZ 1234 DSEI60-10A Ratings min. typ. max. Unit 70 A -40 150 °C -40 125 °C -40 150 °C 6 g 0.8 1.2 Nm 20 120 N Ordering Standard Ordering Number DSEI60-10A Marking on Product DSEI60-10A Delivery Mode Tube Quantity Code No. 30 434515 Similar Part DSEI60-12A Package TO-247AD (2) Voltage class 1200 Equivalent Circuits for Simulation I V0 R0 V 0 max R0 max threshold voltage slope resistance * Fast Diode 1.44 5.5 * on die level T VJ = 150°C V m IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20201013a Outlines TO-247 E Q D 2x E2 123 L1 L A A2 ØP S Ø P1 D2 D1 4 E1 2x b2 e 2x b C A1 DSEI60-10A Sym. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 Inches min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 - 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 - - 0.29 Millimeter min. max. 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 - 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 - 0.51 1.35 13.45 - - 7.39 3 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20201013a DSEI60-10A Fast Diode 120 100 80 IF 60 [A] 40 TVJ = 25°C 100°C 150°C 20 0 0 1 2 3 VF [V] Fig. 1 Forward current IF versus max. forward voltage drop VF 6 TVJ = 100°C VR = 540 V 5 max. 4 Qr 3 [µC] 2 IF = 60 A 120 A 60 A 30 A 1 0 1 10 100 1000 -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 80 60 IRM 40 [A] IF = 60 A 120 A 60 A 30 A max. 20 TVJ = 100°C VR = 540 V 0 0 200 400 600 800 1000 -diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM versus -diF /dt 1.4 1.2 50 1000 TVJ = 100°C TVJ = 125°C 1.2 1.0 VR = 540 V IF = 60 A 40 800 1.0 KF 0.8 IRM 0.6 QR 0.4 0 40 80 120 160 TJ [°C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.8 trr 0.6 [µs] 0.4 0.2 max. IF = 60 A 120 A 60 A 30 A VFR 30 [V] 20 10 VFR 600 tfr 400 tfr [ns] 200 0.0 0 200 400 600 800 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt 0 0 0 200 400 600 800 1000 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 0.6 0.5 0.4 ZthJC 0.3 [K/W] 0.2 0.1 Constants for ZthJC calculation: i Rthi (K/W) ti (s) 1 0.080 0.0018 2 0.120 0.0100 3 0.100 0.5000 4 0.200 0.0800 0.0 1 10 100 1000 t [ms] Fig. 7 Transient thermal impedance junction to case 10000 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201013a Downloaded from Arrow.com.