OMRON G3VM MOS FET Relays: Selection Guide
This comprehensive selection guide introduces OMRON's G3VM series of MOS FET Relays, renowned for their advanced performance, reliability, and compact form factors. These relays are engineered to meet the demanding requirements of modern electronic equipment, including high-accuracy measurement, testing, and automation systems.
What's New: The G3VM MOS FET Relay Module is now available, featuring very small packages like VSON(R) and S-VSON(L).
Key Features and Advantages
Ultra-Low Leakage Current
The G3VM series, particularly models incorporating the innovative "T-structure inside," achieves exceptionally low leakage current, reaching as low as 1 pA (and even below 0.1 pA in actual performance). This characteristic is vital for high-accuracy measurement equipment, offering a superior alternative to traditional reed relays.
Compact Size and High-Density Mounting
With extremely small outlines, such as 5 mm x 3.75 mm x 2.7 mm, these modules facilitate high-density mounting on printed circuit boards, enabling significant downsizing of electronic devices.
Exceptional Long Life and Reliability
By employing a semiconductor (MOS FET) for the output circuit, G3VM relays eliminate physical contacts, thereby avoiding wear and arc failure. This design ensures a substantially longer operational life compared to mechanical relays, with no wear due to switching arcs.
High Sensitivity and Low Drive Current
Many OMRON MOS FET Relays are designed for high sensitivity, requiring minimal drive current (as low as 0.2 mA max for ultrasensitive models), which contributes to energy efficiency.
High Dielectric Strength
Models featuring black mold resin packages and double mold structures provide high dielectric strength. Standard models offer 2,500 Vrms between input and output, with superior products reaching up to 5,000 VAC.
Silent Operation and High-Speed Switching
The absence of mechanical contacts ensures silent operation. These relays also deliver high-speed switching capabilities, with response times as short as 0.2 ms, ensuring quick performance.
Excellent Shock Resistance
Utilizing a casting method for internal parts and having no movable components, G3VM relays exhibit excellent resistance to shock and vibration.
Precise Control of Micro Analog Signals
Compared to triacs, MOS FET relays significantly reduce the dead zone, preventing distortion of micro analog input signals and ensuring accurate waveform conversion.
Product Lineup Overview
The G3VM series encompasses a broad spectrum of models, categorized by their contact forms, functions, and package types to cater to diverse application needs. Key product categories include:
T-Switch Function Type
Designed for high-frequency (up to 1.5 GHz) and low-signal applications, models like the G3VM-21MT leverage the T-structure for ultra-low leakage current.
SPDT Contact Form Type
These modules, including the G3VM-26M10 (Low COFF), G3VM-26M11 (Low RON), and G3VM-66M (Diversified), offer a versatile SPDT structure. They are ideal for replacing reed relays, providing space efficiency and extended endurance.
Ultrasensitive Type
Optimized for energy-saving and battery-powered devices, these relays feature very low drive current requirements.
Low Output Capacitance and ON Resistance Type (Low CxR)
These models are tailored for semiconductor test equipment, balancing low output capacitance with low ON resistance for precise measurements.
Voltage Driven Type
Facilitating simpler circuit designs, these relays can be controlled via voltage, reducing the need for complex external components.
Package Types
A wide array of package types is available to suit various mounting and space constraints. These include DIP, SOP, SSOP, USOP, VSON, VSON(R), and S-VSON. Detailed specifications and dimensions for each model and package type are provided in the full product tables within the original document.
Selection Tips
Tip 1: Voltage and Current Considerations
Always verify the maximum load voltage and continuous load current ratings. For AC loads, remember the relationship: Effective Value × √2 = Maximum Value.
Tip 2: Managing Inrush Current
When dealing with inrush current, consult the catalog for "Pulse ON current" specifications. These values can be up to three times the continuous load current for short durations (e.g., 100 ms).
Tip 3: Doubling Current Capacity
For DC load applications, models supporting connection C (parallel connection of two MOS FET elements) can effectively double the continuous load current capacity.
Structure and Operational Principle
The MOS FET relay's operation is based on optical semiconductor technology. An input LED emits light, which is then converted into a voltage signal by an internal Photodiode Dome Array (PDA) chip. This voltage signal serves as the gate voltage to control the MOS FET, enabling the switching of the load current without any physical contact.
Internal Components: The relay comprises an LED chip (light-emitting diode), a PDA chip (photodiode dome array), and a MOS FET chip, interconnected via lead frames and encapsulated within epoxy and silicone resin.
Operational Flow:
- Input Signal: Current applied to the input side activates the LED.
- Light Transmission: The LED emits light, which is captured and converted into voltage by the PDA chip.
- MOS FET Activation: The voltage generated by the PDA acts as the gate voltage, controlling the MOS FET via an integrated control circuit to switch the output load.
