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Owner's Manual for IXYS models including: DSEC60-12A High Performance Fast Recovery Diode, DSEC60-12A, High Performance Fast Recovery Diode, Performance Fast Recovery Diode, Fast Recovery Diode, Recovery Diode
DSEC60-12A IXYS - РКС Компоненти - РАДІОМАГ
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DocumentDocumentHiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC60-12A 1 2 3 DSEC60-12A VRRM I FAV t rr = 1200 V = 2x 30 A = 40 ns Backside: cathode Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Package: TO-247 Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c Downloaded from Arrow.com. DSEC60-12A Fast Diode Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current forward voltage drop average forward current VR = 1200 V VR = 1200 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TC = 120°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM CJ I RM t rr threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance max. reverse recovery current t = 10 ms; (50 Hz), sine; VR = 0 V VR = 600V f = 1 MHz reverse recovery time IF = 30 A; VR = 600 V -diF/dt = 200 A/µs TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 150°C TVJ = 175°C Ratings min. typ. max. Unit 1200 V 1200 V 250 µA 1 mA 2,74 V 3,27 V 1,79 V 2,30 V 30 A TVJ = 175°C TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 100°C TVJ = 25 °C TVJ = 100°C 1,12 V 16 m 0,9 K/W 0,25 K/W 165 W 200 A 12 pF 8,5 A 13 A 60 ns 170 ns IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c Package TO-247 Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Product Marking Conditions per terminal 1) Logo Part Number Date Code Lot# Location IXYS XXXXXXXXX yywwZ 1234 DSEC60-12A Ratings min. typ. max. Unit 70 A -55 175 °C -55 150 °C -55 150 °C 6 g 0,8 1,2 Nm 20 120 N Ordering Standard Ordering Number DSEC60-12A Marking on Product DSEC60-12A Delivery Mode Tube Quantity Code No. 30 476412 Equivalent Circuits for Simulation I V0 R0 V 0 max R0 max threshold voltage slope resistance * Fast Diode 1,12 13,4 * on die level T VJ = 175°C V m IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEC60-12A Outlines TO-247 E Q A A2 ØP S D 2x E2 123 L1 L 2x b2 b4 2x e 3x b C A1 Ø P1 D2 D1 4 E1 Sym. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 Inches min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 - 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 - - 0.29 Millimeter min. max. 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 - 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 - 0.51 1.35 13.45 - - 7.39 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c DSEC60-12A Fast Diode 70 60 50 IF 40 [A] 30 20 T = 150°C VJ 100°C 25°C 10 0 0 1 2 3 VF [V] Fig. 1 Forward current IF versus VF 5 T = 100°C VJ V = 600 V R 4 Qr 3 I = 60 A F 30 A 15 A [µC] 2 60 50 40 IRM 30 [A] 20 I = 60 A F 30 A 15 A 1 10 T = 100°C VJ V = 600 V 0 0 R 4 100 1000 0 200 400 600 800 1000 -diF /dt [A/µs] -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt 2.0 1.5 Kf 1.0 I RM 0.5 Q R 220 200 trr 180 [ns] 160 140 T = 100°C VJ V = 600 V R I = 60 A F 30 A 15 A 0.0 0 40 80 120 160 TVJ [°C] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 120 0 200 400 600 800 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt 120 100 80 VFR 60 [V] 40 T = 100°C VJ I = 30 A F 1.2 1.0 0.8 0.6tfr [µs] 0.4 20 0.2 VFR 0 0 200 400 600 800 -diF /dt [A/µs] trr 0.0 1000 Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1 0.1 ZthJC [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t [s] Fig. 7 Transient thermal impedance junction to case Constants for ZthJC calculation: i Rthi (K/W) ti (s) 1 0.030 0.001 2 0.080 0.030 3 0.300 0.006 4 0.490 0.060 1 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610c Downloaded from Arrow.com.