Fuji Electric P633C Series Small Intelligent Power Module User Manual

User Manual for Fuji Electric models including: P633C Series Small Intelligent Power Module, P633C Series, Small Intelligent Power Module, Intelligent Power Module, Power Module, Module

Fuji Electric Co.,Ltd.

第3章　控制端子的详细说明

功率半导体 IGBT 应用手册 Small IPM X系列 (P642系列) | Fuji Electric Global

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MT6M16945 EN 03

Small IPM (Intelligent Power Module) P633C Series 6MBP**XS*065-50 Application Manual
August 2023 MT6M16945

Cautions
This Instruction contains the product specifications, characteristics, data, materials, and structures as of August 2023. The contents are subject to change without notice for specification changes or other reason. When using a product listed in this Instruction be sure to obtain the latest specifications.
The application examples in this note show the typical examples of using Fuji products and this note shall neither assure to enforce the industrial property including some other rights nor grant the license.
Although Fuji Electric Co., Ltd. continually strives to enhance product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, be sure to take adequate safety measures such as redundant, flameretardant and fail-safe design in order to prevent a semiconductor product failure from leading to a physical injury, property damage or other problems.
The products described in this application manual are manufactured with the intention of being used in the following industrial electronic and electrical devices that require normal reliability.
Compressor motor inverter Fan motor inverter for room air conditioner Compressor motor inverter for heat pump applications, etc.
If you need to use a semiconductor product in this application note for equipment requiring higher reliability than normal, such as listed below, be sure to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products, take adequate safety measures such as a backup system to prevent the equipment from malfunctioning when a Fuji Electric's product incorporated in the equipment becomes faulty.
Transportation equipment (mounted on vehicles and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shutoff function Disaster prevention / security equipment Safety devices, etc.
Do not use a product in this application note for equipment requiring extremely high reliability such as: Space equipment Airborne equipment Atomic control equipment Submarine repeater equipment Medical equipment
All rights reserved. No part of this application note may be reproduced without permission in writing from Fuji Electric Co., Ltd.
If you have any question about any portion of this application note, ask Fuji Electric Co., Ltd. or its sales agencies. Neither Fuji Electric Co., Ltd. nor its agencies shall be liable for any injury or damage caused by any use of the products not in accordance with instructions set forth herein.

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Chapter 3 Details of Signal Input/Output Terminals

1. Control Power Supply Terminals VCCH,VCCL,COM 2. Power Supply Terminals of High-Side VB(U, V, W) 3. Function of Built-in BSDs (Boot Strap Diodes) 4. Input Terminals IN(HU, HV, HW), IN(LU, LV, LW) 5. Over Current Protection Input Terminal IS 6. Fault Status Output Terminal VFO 7. Temperature Sensor Output Terminal TEMP 8. Overheating Protection

3-2 3-6 3-9 3-14 3-17 3-19 3-20 3-22

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1. Control Power Supply Terminals VCCH, VCCL, COM
<Voltage Range of control power supply terminals VCCH, VCCL> · For control supply voltage, please connect a 15V10% DC power supply between VCCH, VCCL
and COM terminals. · Table 3-1 describes the operation of the product for various control supply voltages. A low
impedance capacitor and a high frequency decoupling capacitor should be connected close to the terminals of the power supply. · High frequency noise on the power supply might cause malfunction of the internal control IC or erroneous fault signal output. To avoid these problems, the maximum amplitude of voltage ripple on the power supply should be less than 1V/µs. · The potential at the COM terminal is different from that at the N(U, V, W) power terminal. It is very important that all control circuits and power supplies are referred to the COM terminal and not to the N(U, V, W) terminals. If circuits are improperly connected, current might flow through the shunt resistor and cause improper operation of the short-circuit protection function. In general, it is recommended to make the COM terminal as the ground potential in the PCB layout. · The main control power supply is also connected to the bootstrap circuit which provide floating power supplies for the high-side gate drivers. · When high-side control supply voltage VCCH falls below VCCH(OFF), only the IGBT which under voltage condition occurred becomes off-state even though input signal is ON condition. · When low-side control supply voltage VCCL falls below VCCL(OFF), all low-side IGBTs become off-state even though the input signal is ON condition.

Table 3-1 IPM operations versus control supply voltage VCCH, VCCL Control Voltage Range [V] Operations and functions

0 ~ 4

The product doesn't operate. UV and fault output are not activated. dv/dt noise on the main P-N supply might cause malfunction of the
IGBTs.

4 ~ 13

The product starts to operate. UV is activated, control input signals are blocked and fault output VFO is generated.

13 ~ 13.5

UV is reset. IGBTs perform switching in accordance to input signal.
Drive voltage is below the recommended range, so VCE(sat) and the switching loss will be larger than that under normal condition. High
side IGBTs do not switch until VB(*)*1 reaches VB(ON) after initial charging.

13.5 ~ 16.5

Normal operation. This is the recommended operating condition.

16.5 ~ 20

IGBTs perform switching. Because drive voltage is above the recommended range, IGBT's switching is faster and causes an increase in system noise. Even with proper overcurrent protection design, the short-circuit peak current can become very large and might lead to failure.

Over 20

Control circuit in the product might be damaged. It is recommended to insert a Zener diode between each pair of control supply terminals if necessary.

*1VB(*) is applied between VB(U)-U, VB(V)-V, VB(W)-W.

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<Under Voltage (UV) protection of control power supply terminals VCCH, VCCL> · Fig.3-1 shows the UV protection circuit of VCCH and VCCL. · Fig.3-2 and Fig.3-3 shows the operation sequence of UV operation of VCCH and VCCL. · As shown in Fig.3-1, a diode is connected between VCCH-COM and VCCL-COM terminals. The
diode is connected to protect the Small IPM from the input surge voltage. Do not use the diode for voltage clamp purpose otherwise the product might be damaged.

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Fig.3-1 UV protection circuit of VCCH, VCCL

3-3

Input signal

VCCL Supply voltage

VCCL(ON)

VCCL(OFF)

VCCL(ON)

UV detected

Low-side IGBT Collector Current

VCCL(OFF)

UV detected

VFO output voltage

VCCL(ON)

tFO 20µs(min.)

tFO

<1>

<2>

<3>

<4>

Fig.3-2 Operation sequence of VCCL Under Voltage protection (Low-side)
When VCCL is below 4V, under voltage (UV) protection of low-side and fault output are not activated.
<1> When VCCL is lower than VCCL(ON), all low-side IGBTs are in OFF state. After VCCL exceeds VCCL(ON), the fault output VFO is reset from L level to H level. The low-side IGBTs start switching operation from the next input signal.
<2> The fault output VFO is activated when VCCL falls below VCCL(OFF), and all low-side IGBTs are turned-off. If the voltage drop period is less than 20µs, the minimum pulse width of the fault output is tFO=20µs(min.). During this period, all low-side IGBTs remain in OFF state regardless of the input signal condition.
<3> When VCCL exceeds VCCL(ON) after tFO elapsed, UV protection is reset and the fault output VFO is reset simultaneously. The low-side IGBTs start switching operation from the next input signal.
<4> If the voltage drop period is longer than tFO, the fault output VFO with the same width is generated. During this period, all low-side IGBTs are in OFF state regardless of the input signal condition.

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Input signal

VCCH Supply Voltage
VCCH(ON)
UV detected
High-side IGBT Collector Current

VCCH(OFF)

UV detected

VFO output voltage: High-level (no fault output)

VCCH(ON)

<1>

<2>

<3>

Fig.3-3 Operation sequence of VCCH Under Voltage protection (High-side)
<1> When VCCH is lower than VCCH(ON), the high-side IGBTs is in OFF state. After VCCH exceeds VCCH(ON), the upper side IGBTs start switching operation from the next input signal. The fault output VFO remains at H level regardless of VCCH.*1
<2> When VCCH falls below VCCH(OFF), the high-side IGBTs are turned-off. The fault output VFO remains H level.
<3> After the UV protection operation is reset, the upper side IGBTs start switching operation from the next input signal.
*1: The fault output does not depend on the HVIC bias conditions.

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2. Power Supply Terminals of High-Side VB(U,V,W)
<Voltage range of high-side bias voltage for IGBT driving terminals VB(U, V, W)> · The voltage VB(*), which is the voltage between VB(U,V,W) and U, V, W, provides the power supply
to the HVICs within the product. The HVIC can drive the high-side IGBT when this voltage is in the range of 13.0~18.5V. · The product includes UV protection for VB(*) to ensure that the HVICs do not drive the high-side IGBTs when VB(*) drops below a specified voltage (refer to the datasheet). This function prevents the IGBT from operating in a high dissipation mode. Please note that the UV protection only works on the triggered phase and doesn't generate fault output. · In the case of using bootstrap circuit, the IGBT drive power supply for high-side can be generated from the high-side/low-side control power supply. · The power supply of the high-side is charged when the low-side IGBT is turned on or when freewheel current flows through the low-side FWD. Table 3-2 describes the operation of the product for various control supply voltages. The control supply should be well filtered with a low impedance capacitor and a high frequency decoupling capacitor connected close to the terminals in order to prevent malfunction of the internal control IC caused by a high frequency noise on the power supply. · When VB(*) falls below VB(OFF), only the triggered phase IGBT is off-state even though the input signal is provided.

Table 3-2 IPM operations versus high-side voltage for IGBT driving VB(*) Control Voltage Range [V] Operations and functions

0 ~ 4

HVICs are not activated. UV does not operate. dv/dt noise on the main P-N supply might trigger the IGBTs.

4 ~ 12.5

HVICs start to operate. As the UV is activated, control input signals are blocked.

12.5 ~ 13

UV is reset. The high side IGBTs perform switching in accordance to
input signal. Driving voltage is below the recommended range, so
VCE(sat) and the switching loss will be larger than that under normal condition.

13 ~ 18.5

Normal operation. This is the recommended operating condition.

18.5 ~ 20

The high side IGBTs perform switching. Because drive voltage is above the recommended range, IGBT's switching is faster and causes an increase in system noise. Even with proper overcurrent protection design, the short-circuit peak current can become very large and might lead to failure.

Over 20

Control circuit in the product might be damaged. It is recommended to insert a Zener diode between each pair of high side power supply terminals.

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<Under Voltage (UV) protection of high-side power supply terminals VB(U,V,W)>
· Fig.3-4 shows the UV protection circuit of high-side power supply terminals VB(U)-U, VB(V)-V, VB(W)-W, VB(*).
· Fig.3-5 shows the operation sequence of VB(*) UV protection. · As shown in Fig.3-4, diodes are electrically connected to the VB(U,V,W)-(U,V,W) and VB(U,V,W)-
COM terminals. These diodes are built-in to protect the product from surge input. Do not use these
diodes as voltage clamp diodes as it might damage the product.

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Fig.3-4 UV protection circuit of VB(U, V, W)

3-7

Input signal
VB(*) supply voltage
VB(ON) UV detected
Collector current
VFO output voltage

VB(OFF)

UV detected

VB(ON)

<1>

<2>

<3>

Fig.3-5 Operation sequence of VB(*) Under voltage protection (High-side)
<1> When the voltage between VB(U)-U, VB(V)-V, VB(W)-W, VB(*) is lower than VB(ON), the high-side IGBT is in OFF state. After VB(*) exceeds VB(ON), the high-side IGBT starts switching operation from the next input signal. The fault output VFO does not depend on VB(*) and remains at H level. *1
<2> When VB(*) falls below VB(OFF), the high-side IGBT is turned-off. However, the fault output VFO remains at H level.
<3> After the UV protection operation is reset, the high-side IGBT starts switching operation from the next input signal.
*1: The fault output does not depend on the HVIC bias conditions.

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3. Function of Built-in BSDs (bootstrap Diodes)
There are several ways to supply the voltage VB(*) between the high-side drive power supply terminals VB(U)-U, VB(V)-V, VB(W)-W. This product can configure a bootstrap circuit by using the built-in BSD. The bootstrap method is a simple and cheap solution. However, the duty cycle and on-time are limited by the charging operation of the bootstrap capacitor. As shown in Fig. 3-6, Fig. 3-8 and Fig. 3-11, the bootstrap circuit consists of bootstrap diode with current limiting resistor, which are integrated in the Small IPM and an external capacitor.
<Charging and Discharging of Bootstrap Capacitor During Inverter Operation> When low-side IGBT is ON state, the charging voltage on the bootstrap capacitance VC(t1) is calculated by the following equations. Fig.3-6 shows the circuit diagram of charging operation, and Fig.3-7 shows the timing chart.
VC(t1) = VCC VF(D) VCE(sat) Ib·R......Transient state VC(t1) VCC...................................Steady state
VF(D) : Forward voltage of Bootstrap diode D VCE(sat) : Saturation voltage of low side IGBT R : Bootstrap resistance Ib : Bootstrap charging current When low-side IGBT is turned off, the freewheeling current flows through the freewheel path of the high-side FWD. Once VS rises above VCC, the charging of bootstrap capacitor, C stops, and the voltage of C gradually decreases due to current consumption of high-side drive circuit.

Input signal of high-side IGBT
Input signal of low-side IGBT

Voltage level of

VCC

bootstrap capacitor

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Fig.3-6 Circuit diagram of charging operation

ON Vb(t1)

Decreasing due to current consumption of high-side drive circuit

Spontaneous discharge of C

Fig.3-7 Timing chart of charging operation

3-9

When the low-side IGBT is OFF and the low-side FWD is ON, freewheeling current flows through the low-side FWD. The voltage on the bootstrap capacitance VC(t2) is calculated by the following equations. Fig.3-8 shows the circuit diagram of charging operation, and Fig.3-9 shows the timing chart.
VC(t2) = VCC VF + VF(FWD) Ib·R.........Transient state VC(t2) VCC....................................Steady state
VF(D) : Forward voltage of Bootstrap diode D VF(FWD) : Forward voltage of low-side FWD R : Current limiting resistance Ib : Bootstrap charging current
When both the low-side and high-side IGBTs are OFF, a regenerative current flows continuously through the low-side FWD. Therefore Vs drops to VF of FWD, then the bootstrap capacitor, C is re-charged to restore the declined potential. When the high-side IGBT is turned ON and Vs exceeds VCC, the charging of C stops, and the voltage of C gradually decreases due to current consumption of high-side drive circuit.
Fig.3-8 Circuit diagram of charging operation when the low-side FWD is ON

Input signal of

high-side IGBT

Input signal of low-side IGBT

OFF

Voltage level of bootstrap capacitor (Vb)
VS

(FWD:ON) Vb(t2)

(FWD:ON)

Decreasing due to current consumption of high-side drive circuit

Fig.3-9 Timing chart of charging operation when the low-side FWD is ON

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The parameter of bootstrap capacitor can be calculated by the following equation:

1 b

t1 Maximum ON pulse width of the high-side IGBT ICCHB: Drive current of the HVIC (depends on temperature and frequency characteristics) dVb: Allowable discharge voltage. (see Fig.3-10)

· A certain margin should be added to the calculated capacitance. · The bootstrap capacitance is generally selected 2~3 times the value of the calculated result. · The recommended minimum ON pulse width (t2) of the low-side IGBT should be determined such
that the time constant CR will enable the discharged voltage (dV) to be fully recharged during the
ON period.
· In the operation mode in which the high-side IGBT performs switching operation and charges when the low-side FWD is turned-on (timing chart in Fig. 3-10), the time constant is set so that the power
consumed during the ON period of the high-side IGBT can be recharged during the OFF period.
· The minimum pulse width is decided by the minimum ON pulse width of the low-side IGBT or the minimum OFF pulse width of the high-side IGBT, whichever is shorter.

db CC - b min

R: Current limiting resistance of Bootstrap diode RF(BSD) C: Bootstrap capacitance dV: Allowable discharge voltage. VCC Control power supply voltage (ex.15V) Vb(min): Minimum voltage of high-side IGBT drive voltage (Added margin to UV. ex. 14V)

Input signal of high-side IGBT

Input signal of low-side IGBT

dVb

Voltage level of bootstrap capacitor (Vb)

t1
dVb
Decreasing due to current consumption of high-side drive circuit

Fig.3-10 Timing chart of charging and discharging operation

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<Setting the bootstrap capacitance for Initial charging>
· Initial charging of the bootstrap capacitor is required to start the inverter.
· The pulse width or number of pulses should be long enough to fully charge the bootstrap capacitor.
· For reference, the charging time of a 10F capacitor through the internal bootstrap diode is about 2ms.

Main Bus voltage VP-N(*) Control power supply voltage VCC
High-side IGBT drive voltage VB(*) Input signal of low-side IGBT
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Fig.3-11 Circuit diagram of initial charging operation

Start PWM

Initial charging time Fig.3-12 Timing chart of initial charging operation

3-12

<Resistance characteristics of built-in BSD> The BSD forms a current limiting resistance of 100 (typ.) inside the chip. Fig. 3-13 and 3-14 show the VF-IF characteristics of the BSD.
Fig.3-13 VF-IF curve of boot strap diode

Fig. 3-14 VF-IF curve of boot strap diodeExpansion of low current area

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4. Input Terminals IN(HU,HV,HW), IN(LU,LV,LW)
<Input terminals Connection> · Fig.3-15 shows the input interface circuit between the MPU and the product. The input terminals
can be directly connected to the MPU. The input terminals have built-in pull down resistors, thus external pull-down resistors are not required. Also, the input logic is active high, thus external pullup resistors are not required. · If the signal wiring is long and noise is superimposed, insert RC filter circuit indicated by the dotted line in Figure 3-15. Adjust the R and C constants according to the PWM control method and wiring pattern of the PCB.
Fig.3-15 Recommended MPU I/O Interface Circuit of IN(HU,HV,HW), IN(LU,LV,LW) terminals

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<Input terminal circuit> · The input logic of this product is active high. This logic has removed the sequence restriction
between the control power supply and the input signal during startup or shut down operation. Therefore it makes the system fail safe. In addition, pull-down resistors are built into each input terminals in Fig.3-16. Thus, external pull-down resistors are not needed and reduces the number of system components. Furthermore, by setting the input threshold voltage low,. a 3.3V-class MPU can be connected directly. · As shown in Fig.3-16, the input circuit integrates a pull-down resistor. Therefore, when using an external filtering resistor between the MPU output and input of the product, please consider the signal voltage drop at the input terminals to satisfy the turn-on threshold voltage requirement. For instance, R=100 and C=1000pF for the parts shown by the dotted line in Fig.3-15. · Fig.3-16 shows that internal diodes are connected to the VCCL-IN(LU, LV, LW) and IN(HU, HV, HW, LU, LV, LW)-COM terminals. Do not use these diodes for voltage clamp purpose otherwise the product might be damaged.

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Fig.3-16 Input terminals IN(HU, HV, HW), IN(LU, LV, LW) circuit

3-15

<IGBT drive state versus Control signal pulse width> tIN(ON) is the recommended minimum turn-on pulse width for changing the IGBT state from OFF to ON, and tIN(OFF) is the recommended minimum turn-off pulse width for changing the IGBT state from ON to OFF. Fig.3-17 and Fig.3-18 show the IGBT drive state for various control signal pulse width.
A: IGBT may turn on occasionally, even when the ON pulse width of control signal is less than minimum tIN(ON). Also if the ON pulse width of control signal is less than minimum tIN(ON) and voltage below -5V is applied between U-COM,V-COM,W-COM , it may not turn off due to malfunction of the control circuit.
B: IGBT can turn on operates in the linear region under normal conditions. C: IGBT may turn off occasionally, even when the OFF pulse width of control signal is less than
minimum tIN(OFF). Also if the OFF pulse width of control signal is less than minimum tIN(OFF) and voltage below -5V is applied between U-COM, V-COM, W-COM, it may not turn on due to malfunction of the control circuit. D: IGBT can turn off fully under normal condition.

Outside Recommended
range
A

Recommended range B

Minimum

tIN(ON)

Fig.3-17 IGBT drive state versus ON pulse width of input signal

Outside Recommended
range
C

Recommended range D

Minimum

tIN(OFF)

Fig.3-18 IGBT drive state versus OFF pulse width of input signal

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5. Over Current Protection Input Terminal IS
· Over current (OC) protection function works by detecting the voltage generated by the external shunt resistor connected between N(U, V, W) and COM at the IS terminal, turn off the IGBTs and output an alarm signal.
· Fig.3-19 shows the over current sensing voltage input IS circuit block, and Fig.3-20 shows the OC operation sequence.
· To prevent the product from unnecessary operations due to normal switching noise or recovery current, it is necessary to apply an external R-C filter (time constant is approximately 0.7µs) to the IS terminal. The shunt resistor should be connected to the product as close as possible.
· Fig.3-19 shows that the diodes in the product are connected to the VCCL-IS and IS-COM terminals. Do not use these diodes for voltage clamp purpose otherwise the product might be damaged.
Fig.3-19 Over current sensing voltage input IS circuit

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Low-side Input signal
IS input voltage

td(IS) VIS(ref)
OC detected

VFO output voltage
t1

>tFO (min.)

t2 t3

Fig.3-20 Operation sequence of Over Current protection

<t1>: t2: t3:
t4:

IS input voltage does not exceed VIS(ref), while the collector current of the low-side IGBT is under the normal operation.
When IS input voltage exceeds VIS(ref), the OC is detected.
The fault output VFO is activated and all low-side IGBT shut down simultaneously after the over current protection delay time td(IS). Inherently there is dead time of LVIC in td(IS).
After the fault output pulse width tFO, the OC is reset. Then next input signal is activated.

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6. Fault Status Output Terminal VFO
· As shown in Fig.3-21, it is possible to connect the fault status output VFO terminal directly to the MPU. VFO terminal is open drain configured, thus this terminal should be pulled up by a resistor of approximate 10k to the positive side of the 5V or 3.3V external logic power supply. It is also recommended that the bypass capacitor C1 and the inrush current limitation resistor R1 above 5k, should be connected between the MPU and the VFO terminal. These signal lines should be wired as short as possible.
· Fault status output VFO function is activated by the UV of VCCL, OC and OH. (OH protection function is applied to "6MBP**XSK065-50".)
· Fig.3-21 shows that the diodes in the IPM are electrically connected to the VCCL-VFO and VCCLCOM terminals. Do not use these diodes for voltage clamp purpose otherwise the product might be damaged.
· Fig.3-22 shows the Voltage-current characteristics of VFO terminal at fault state condition. The IFO is the sink current of the VFO terminal as shown in Fig.3-21.

Fig.3-21 Recommended MPU I/O Interface Circuit of VFO terminal

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Fig.3-22 Voltage-current Characteristics of VFO terminal at the fault state condition

3-19

7. Temperature Sensor Output Terminal TEMP
· As shown in Fig. 3-23, the temperature sensor output TEMP can be connected to MPU directly. · It is recommended that a by-pass capacitor CTEMP and inrush current limiting resistor RTEMP above
10k is connected between the TEMP terminal and the MPU. These signal lines should be wired as short as possible to each device. · The product has a built-in temperature sensor, and it can output an analog voltage according to the LVIC temperature. This function doesn't protect the product, and there is no fault signal output. · "6MBP**XSK065-50" has built-in overheating protection. If the temperature exceeds TOH, fault signal will output due to the overheating protection function. · Since the position of the IGBT chip and the position of the temperature sensor are different, it is not possible to respond to sudden rise in Tvj such as during motor lock and short circuit (see Fig. 2-2). · A diode is electrically connected between TEMP-COM terminal as shown in Fig. 3-12. The diode protect the product from input surge voltage. Do not use the diode for voltage clamp purpose otherwise the product might be damaged. · Fig.3-24 shows the LVIC temperature versus TEMP output voltage characteristics. A Zener diode should be connected to the TEMP terminal when the power supply of MPU is 3.3V. The output voltage shows clamp characteristic at below room temperature. Connect a 22k±10% pull-down resistor to the TEMP terminal if linear characteristic is required. · Fig. 3-25 shows the LVIC temperature versus TEMP output voltage characteristics with 22k pulldown resistor Rpulldown. · Fig.3-26 shows the operation sequence of TEMP terminal at during the LVIC startup and shut down conditions.

Fig.3-23 Recommended MPU I/O Interface Circuit of TEMP terminal

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Fig.3-24 LVIC temperature vs. TEMP output voltage characteristics
without pull-down resistor

Fig.3-25 LVIC temperature vs. TEMP output voltage characteristics
with 22k pull-down resistor

VCCL voltage
VFO terminal voltage
TEMP terminal voltage

VCCL increasing VCCL(ON)

VCCL decreasing VCCL(OFF)
t3 t4

Fig.3-26 Operation sequence of TEMP terminal during LVIC startup and shut down conditions

t1-t2 : TEMP function is activated when VCCL exceeds VCCL(ON). If VCCL is lower than VCCL(ON), the TEMP terminal voltage is the same as the clamp voltage.
t2-t3 : TEMP terminal voltage rises to the voltage determined by LVIC temperature. In the case that the temperature is under clamping condition, the TEMP terminal voltage is the clamp voltage even
though VCCL is above VCCL(ON). t3-t4 : TEMP function is reset when VCCL falls below VCCL(OFF). TEMP terminal voltage is the same as
the clamp voltage.

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8. Overheating protection
· The Overheating (OH) protection functions is integrated into "6MBP**XSK065-50". · The OH function monitors the LVIC junction temperature. Since the position of the IGBT chip and
the position of the temperature sensor are different, it is not possible to respond to sudden rise in Tvj such as during motor lock and short circuit (see Fig. 2-2). · The TOH sensor position is shown in Fig.2-2. · As shown in Fig.3-27, the product shuts down all low side IGBTs when the LVIC temperature exceeds TOH. The fault status is reset when the LVIC temperature drops below TOH TOH(hys).

Low-side arm Input signal Low-side IGBT collector current
LVIC temperature
VFO output voltage

TOH(hys) >tFO(min.)

TOH-TOH(hys)

Voltage of TEMP terminal

Fig.3-27 Operation sequence of the over heating operation

t1 : The fault status is activated and all IGBTs of the low-side arm shut down, when LVIC temperature exceeds TOH.
t2 : When LVIC temperature falls below TOH TOH(hys), the fault status is reset after tFO and next input signal is activated. TOH(hys) is the over heating protection hysteresis

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第3章 控制端子的详细说明

第3章　控制端子的详细说明