Vishay Intertechnology: Passives & Discrete Semiconductorsvishay.com/doc?91000vishay.com/doc?99912
Owner's Manual for VISHAY models including: IRFD9120PBF, IRFD9120, IRFD9120 Power Mosfet, IRFD9120, Power Mosfet, Mosfet
IRFD9120PBF за ціною від 28.00 грн - РКС Компоненти - РАДІОМАГ
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DocumentDocumentwww.vishay.com IRFD9120 Vishay Siliconix Power MOSFET HVMDIP S G S G D D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -100 VGS = -10 V 18 3.0 9.0 Single 0.60 FEATURES · Dynamic dv/dt rating · Repetitive avalanche rated · For automatic Insertion · End stackable · P-channel · 175 °C operating temperature · Fast switching · Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free HVMDIP IRFD9120PbF ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at -10 V TA = 25 °C TA = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dv/dt c TA = 25 °C EAS IAR EAR PD dv/dt Operating junction and storage temperature range Soldering rRecommendations (peak temperature) d For 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = -25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = -2.0 A (see fig. 12) c. ISD -6.8 A, di/dt 110 A/s, VDD VDS, TJ 175 °C d. 1.6 mm from case LIMIT -100 ± 20 -1.0 -0.70 -8.0 0.0083 140 -1.0 0.13 1.3 -5.5 -55 to +175 300 UNIT V A W/°C mJ A mJ W V/ns °C S21-0887-Rev. F, 30-Aug-2021 1 Document Number: 91139 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com IRFD9120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient SYMBOL RthJA TYP. - MAX. 120 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = -250 A Reference to 25 °C, ID = -1 mA VDS = VGS, ID = -250 A VGS = ± 20 V VDS = -100 V, VGS = 0 V VDS = -80 V, VGS = 0 V, TJ = 150 °C VGS = -10 V ID = -0.6 A b VDS = -50 V, ID = -0.60 A b Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V VDS = -25 V f = 1.0 MHz, see fig. 5 VGS = -10 V ID = -6.8 A, VDS = -80 V see fig. 6 and 13 b VDD = -50 V, ID = -6.8 A Rg = 18 , RD = 7.1 , see fig. 10 b Internal drain inductance Internal source inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S Drain-Source Body Diode Characteristics MIN. -100 - -2.0 - 0.71 - - - TYP. MAX. UNIT -0.10 - -4.0 ± 100 -100 -500 0.60 - V V/°C V nA A S 390 - 170 - pF 45 - - 18 - 3.0 nC - 9.0 9.6 - 29 - ns 21 - 25 - 4.0 - nH 6.0 - Continuous source-drain diode current Pulsed diode forward current a IS MOSFET symbol D showing the integral reverse G ISM p - n junction diode S - - -1.0 A - - -8.0 Body diode voltage VSD TJ = 25 °C, IS = -1.0 A, VGS = 0 V b - - -6.3 V Body diode reverse recovery time Body diode reverse recovery charge trr Qrr TJ = 25 °C, IF = -6.8 A, di/dt = 100 A/s b - 98 200 ns 0.33 0.66 C Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s; duty cycle 2 % S21-0887-Rev. F, 30-Aug-2021 2 Document Number: 91139 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) IRFD9120 Vishay Siliconix TA = 25 °C Fig. 1 - Typical Output Characteristics, TA = 25 °C Fig. 3 - Typical Transfer Characteristics TA = 175 °C Fig. 2 - Typical Output Characteristics, TA = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature S21-0887-Rev. F, 30-Aug-2021 3 Document Number: 91139 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com IRFD9120 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage TA = 25 °C TJ = 175 °C SINGLE PULSE Fig. 8 - Maximum Safe Operating Area S21-0887-Rev. F, 30-Aug-2021 4 Document Number: 91139 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. ID, Drain Current (A) www.vishay.com TA, Ambient Temperature (°C) Fig. 9 - Maximum Drain Current vs. Ambient Temperature IRFD9120 Vishay Siliconix VDS VGS Rg RD D.U.T. - 10 V Pulse width 1 µs Duty factor 0.1 % +VDD Fig. 10a - Switching Time Test Circuit VGS 10 % td(on) tr td(off) tf 90 % VDS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJA) t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient S21-0887-Rev. F, 30-Aug-2021 5 Document Number: 91139 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com VDS Vary tp to obtain required IAS RG - 10 V tp L D.U.T. IAS 0.01 + V DD Fig. 12a - Unclamped Inductive Test Circuit IRFD9120 Vishay Siliconix IAS VDS VDD tp VDS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current - 10 V QGS VG QG QGD Charge Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 12 V 50 k 0.2 µF 0.3 µF D.U.T. + VDS VGS - 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit S21-0887-Rev. F, 30-Aug-2021 6 Document Number: 91139 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com D.U.T. + - Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations · Low stray inductance · Ground plane · Low leakage inductance current transformer - IRFD9120 Vishay Siliconix + - Rg · dV/dt controlled by Rg + · ISD controlled by duty factor "D" · D.U.T. - device under test - VDD Note · Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery Body diode forward current current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Body diode forward drop Inductor current Ripple 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91139. S21-0887-Rev. F, 30-Aug-2021 7 Document Number: 91139 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. HVM DIP (High voltage) 0.248 [6.29] 0.240 [6.10] Package Information Vishay Siliconix 0.043 [1.09] 0.035 [0.89] 0.094 [2.38] 0.086 [2.18] 0.017 [0.43] 0.013 [0.33] 0.133 [3.37] 0.125 [3.18] 0.197 [5.00] 0.189 [4.80] AL 0.180 [4.57] 0.160 [4.06] 0.160 [4.06] 0.140 [3.56] 0° to 15° 2 x E min. E max. 0.045 [1.14] 2 x 0.035 [0.89] 0.100 [2.54] typ. 0.024 [0.60] 0.020 [0.51] 4 x DIM. A E L ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974 MIN. 0.310 0.300 0.270 INCHES MAX. 0.330 0.425 0.290 MIN. 7.87 7.62 6.86 MILLIMETERS MAX. 8.38 10.79 7.36 Note 1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions. Document Number: 91361 Revision: 06-Sep-10 Downloaded from Arrow.com. www.vishay.com 1 www.vishay.com Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jul-2024 1 Document Number: 91000 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com.