User Guide for onsemi models including: SSG8214-PD-D, SSG8214 Solid State Circuit Breaker, Solid State Circuit Breaker, State Circuit Breaker, Circuit Breaker, Breaker
12 may 2025 — Solution Overview. Solid-State Circuit Breaker Block Diagram. 06. Solid-State Switches. 07. Silicon Carbide JFETs. 08. SiC JFETs Characteristics and ...
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DocumentDocumentSystem Solution Guide - Preview Solid-State Circuit Breaker Get Latest Version onsemi.com Table of Contents Overview Application System Implementation Market Information & Trends Solution Overview Solid-State Circuit Breaker Block Diagram Solid-State Switches Silicon Carbide JFETs SiC JFETs Characteristics and Advantages onsemi EliteSiC JFETs onsemi SiC Combo JFETs onsemi SiC JFET Calculator and Simulator onsemi EliteSiC MOSFETs Gate Driver Temperature Sensing Current sensing Ground Fault Circuit Interrupter Wireless Communication Recommended Products Complementary Products Development Tools and Resources Technical Documentation Get Latest Version 03 04 05 06 07 08 09 10 11 12 13 14 16 17 18 18 19 21 22 23 System Solution Guide - Preview Full Guide Preview Get Latest Version System Solution Guide - Preview Block Diagram Get Latest Version Solid-State Circuit Breaker Block Diagram The block diagram below illustrates a solid-state circuit breaker solution featuring recommended products from onsemi. The most important building block is the switch which replaces traditional electro-mechanical relays. The Gate Driver controls the switch, and the Interface allows it to communicate with the device. Another important part is Sensing which includes both current and temperature sensing. For additional functionality, GFCI can be incorporated. Other components, including power management, logic, memory and many more, can be sourced from onsemi's comprehensive range of solutions. Use our Interactive Block Diagrams Tool System Solution Guide - Preview SiC JFET Get Latest Version Silicon Carbide JFETs Junction field effect transistor (JFET) is a type of unipolar transistor, so it only uses majority carrier type. It is similar to MOSFET as it is operated on the electric field principle, it is voltage controlled and does not require biasing current. The main difference between the two of them is that JFET is a depletion-mode device (normally on) and requires reverse bias to switch and remain off. While some semiconductor-relay applications benefit from this normally-on state, most require a default normally-off state. Addition of a few components can create a normally-off switch even without applied power. Figure 3 shows a cross-section of SiC JFET with VGS = 0 and drain-source voltage VDS nearly zero. This represents one of the thousands of parallel cells in a JFET chip. The onsemi SiC JFET has two PN junctions (diodes): drain-to-gate and gate-to-source. In this unbiased state, a highly conductive channel exists between the Drain and Source, allowing electrons to freely flow in either direction, yielding the distinctive low on-resistance of the onsemi SiC JFET. onsemi offers SiC JFETs, SiC Cascode JFETs and SiC Combo JFETs, each type has its unique characteristics and is suitable to different application. SiC JFET allows the SSCB to operate at up to 175 °C, which is material limit for enclosure; SiC is able to withstand even higher temperatures. Channel Drift region Depletion region Current path SiC JFET · Normally-on SiC JFET · Lowest available Rds · RDS(VGS 2V) = 7 m, RDS(VGS 0V) = 8 m · Useful for circuit breaker and current limiting applications · JFET VGS in the on-state is a direct measure of device TJ, ideal for self-monitoring power devices SiC Cascode JFET · Co-packaged Si MOSFET · Normally-off · Standard gate drive · Built-in JFET gate resistor · Suitable for fast switching applications SiC Combo JFET · Separate access to MOS and JFET gates enables more control of switching dV/dt G · Enables direct drive of JFET gate for 10-15% lower RDS(ON) at @ VGS =+2 V · Simplifies paralleling of multiple JFETs · Same gate drive as separate JFET + MOSFET · Significant space savings Figure 3: Vertical JFET structure with shown direct current path D G S D D JG G S S Figure 4: JFET (top), Cascode JFET (bottom left) and Combo-JFET (bottom right) schematic symbols System Solution Guide - Preview Product Value Propositions onsemi EliteSiC Combo JFETs 40 SiC Combo JFETs UG4SC075005L8S Integrates both a 750V SiC JFET and a low voltage Si MOSFET into a single TOLL 30 package RDS(ON) (m) · 750 V, 120 A · Ultra-low RDS(on): 5 m @25 °C, 20 12.2 m @175 °C · Normally-off capability · Improved parallel device operation 10 · Operating temperature: 175 °C (max) · High pulse current capability · Excellent device robustness 0 · Short circuit rated · Leadless TOLL (MO-229) package Get Latest Version Combo JFET Evaluation Board Figure 9: Comparison of RDS(on) (m) of UG4SC075005L8S and its competition The evaluation board demonstrates the design of solid-state circuit breaker with onsemi Combo JFET device UG4SC075005L8S. SiC Combo JFETs are composite devices consisting of a low-voltage Si MOSFET and a high-voltage SiC normally on JFET. Both gates of SiC JFET and silicon MOSFET are accessible. Compared with standard cascode structure, the SiC Combo JFET has advantages of lower RDS(ON) by over-drive, full switching speed control and junction temperature sensing. Figure 10: Combo JFET Evaluation Board top and bottom sides System Solution Guide - Preview Solid-State Circuit Breaker Get Latest Version Register now to unlock all System Solution Guides and get additional exclusive benefits! Join the conversation on community forum. Utilize Elite Power Simulator & other developer tools. Watch exclusive webinars and seminars. 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