EBYTE E22 Series SX1262/SX1268 Wireless Module User Manual
Version: 1.10
Date: 2018/08/06
Brief Introduction
The E22 series are small size (pin spacing: 1.27mm) SMD wireless transceiver modules designed by Chengdu Ebyte. They feature long-range transmission and super low power consumption.
These modules utilize Semtech's SX1262 and SX1268 RF chips, supporting LoRaTM and traditional GFSK modulation methods. The LoRaTM modulation enhances communication distance. The modules incorporate low-dropout regulators (LDO) and high-efficiency DC-DC converters for low power consumption. In LoRa mode, the SX126x chips can achieve up to 62.5kbps air data rate, and up to 300kbps in GFSK mode.
With a maximum transmit power of 22dBm, the SX126x consumes only 118mA in DC/DC mode, showing improved efficiency. The RF receiver power consumption is 4.8mA, significantly lower than the 10mA of the SX127x series.
The E22 series comply with FCC, CE, CCC standards and related RF certifications for export. Users are responsible for secondary development as a hardware platform.
Model | Frequency | Transmitting power | Distance | Packing | Antenna |
---|---|---|---|---|---|
E22-400M22S | 410-493MHz | 22dBm | 6500m | SMD | Stamp hole/IPEX |
E22-900M22S | 850-930MHz | 22dBm | 6500m | SMD | Stamp hole/IPEX |
E22-400M30S | 410-493MHz | 30dBm | 12000m | SMD | Stamp hole/IPEX |
E22-900M30S | 850-930MHz | 30dBm | 12000m | SMD | Stamp hole/IPEX |
Technical Parameter
Model | Core IC | Size | Net Weight | Operating Temperature | Operating Humidity | Storage Temperature |
---|---|---|---|---|---|---|
E22-400M22S | SX1268 | 20*14*2.8 mm | 1.35±0.1 g | -40 ~ 85°C | 10% ~ 90% | -40~125°C |
E22-900M22S | SX1262 | 20*14*2.8 mm | 1.35±0.1 g | -40 ~ 85°C | 10% ~ 90% | -40 ~ 125°C |
E22-400M30S | SX1268 | 38.5*24*3.6 mm | 4.8±0.1g | -40 ~ 85°C | 10% ~ 90% | -40 ~ 125°C |
E22-900M30S | SX1262 | 38.5*24*3.6 mm | 4.64±0.1g | -40 ~ 85°C | 10% ~ 90% | -40 ~ 125°C |
1.1. E22-400M22S
Parameter | Min | Typ | Max | Unit |
---|---|---|---|---|
Tx current (LoRa@2.4kbps) | 95 | 100 | 105 | mA |
Rx current (LoRa@2.4kbps) | 4.6 | 4.8 | 5.7 | mA |
Turn-off current | 150 | 180 | 200 | nA |
Tx power | 21.4 | 21.5 | 22.3 | dBm |
Rx sensitivity | -144 | -146 | -147 | dBm |
TCXO | 32 | 32 | 32 | MHz |
TCXO voltage setting | 1.8 | 1.8 | 3.3 | V |
Operating frequency | 410 | 433/470/490 | 493 | MHz |
Voltage supply | 1.8 | 3.3 | 3.7 | V |
Communication level | 1.8 | 3.3 | 3.7 | V |
1.2. E22-900M20S
Parameter | Min | Typ | Max | Unit |
---|---|---|---|---|
Tx current (LoRa@2.4kbps) | 114 | 119 | 124 | mA |
Rx current (LoRa@2.4kbps) | 4.8 | 5.0 | 5.9 | mA |
Turn-off current | 150 | 185 | 200 | nA |
Tx power | 21.4 | 21.5 | 22.3 | dBm |
Rx sensitivity | -144 | -146 | -147 | dBm |
TCXO | 32 | 32 | 32 | MHz |
TCXO voltage setting | 1.8 | 1.8 | 3.3 | V |
Operating frequency | 850 | 868/915 | 930 | MHz |
Voltage supply | 1.8 | 3.3 | 3.7 | V |
Communication level | 1.8 | 3.3 | 3.7 | V |
1.3. E22-400M30S/ E22-900M30S
Parameter | Min | Typ | Max | Unit |
---|---|---|---|---|
Tx current (LoRa@2.4kbps) | 600 | 650 | 700 | mA |
Rx current (LoRa@2.4kbps) | 12 | 14 | 16 | mA |
Turn-off current | 1 | 3 | 5 | nA |
Tx power | 29.5 | 30.0 | 31 | dBm |
Rx sensitivity | -149 | -150 | -151 | dBm |
TCXO | 32 | 32 | 32 | MHz |
TCXO voltage setting | 1.8 | 1.8 | 1.8 | V |
Operating frequency | 410 | 433/470/490 | 493 | MHz |
Voltage supply | 2.5 | 5 | 5.5 | V |
Communication level | 1.8 | 3.3 | 3.7 | V |
1.4. Parameter descriptions
- When designing the power supply circuit for the module, it is recommended to reserve more than 30% margin for stable operation.
- The current required during transmission is high but short-lived, so the total energy consumed may be small.
- External antenna impedance matching affects emission current at different frequencies.
- Receiving current is the current consumed when the chip is in pure receiving state. Some communication protocols or custom developments may increase this current.
- Currents in pure receiving state are typically in the mA range; µA-level "receiving current" requires software optimization.
- Shutdown current is usually much lower than the no-load power supply current and has minimal impact.
- Component tolerances (e.g., ±0.1% for LRC components) can accumulate in the RF loop, leading to variations in emission and receiving currents.
- Reducing transmit power can lower power consumption but may decrease the efficiency of the internal Power Amplifier (PA).
Mechanical characteristic
2.1 E22-400M22S/E22-900M22S
2.1.1 Dimensions
[Diagram showing dimensions of E22-400M22S/E22-900M22S module with pin layout and IPX connector]
2.1.2. Pin definition
Pin No. | Pin item | Pin direction | Pin application |
---|---|---|---|
1 | GND | Ground | |
2 | GND | Ground | |
3 | GND | Ground | |
4 | GND | Ground | |
5 | GND | Ground | |
6 | RXEN | Input | RF switch RX control, connects to external MCU IO, valid in high level |
7 | TXEN | Input | RF switch TX control, connects to external MCU IO or DIO2, valid in high level |
8 | DIO2 | Input/output | Configurable IO port (see SX126x datasheet) |
9 | VCC | Power supply, 1.8V~3.7V (external ceramic filter capacitor recommended) | |
10 | GND | Ground | |
11 | GND | Ground | |
12 | GND | Ground | |
13 | DIO1 | Input/output | Configurable IO port (see SX126x datasheet) |
14 | BUSY | Output | State indicator (see SX126x datasheet) |
15 | NRST | Input | Chip reset initiation, valid in low level |
16 | MISO | Output | SPI master input slave output |
17 | MOSI | Input | SPI master output slave input |
18 | SCK | Input | SPI clock |
19 | NSS | Input | Chip select, for starting SPI communication |
20 | GND | Ground | |
21 | ANT | Stamp hole (50 ohm impedance) | |
22 | GND | Ground |
2.2 E22-400M30S/E22-900M30S
2.2.1 Dimensions
[Diagram showing dimensions of E22-400M30S/E22-900M30S module with pin layout and IPX connector]
2.2.2 Pin definition
Pin No. | Pin item | Pin direction | Pin application |
---|---|---|---|
1 | GND | Ground | |
2 | GND | Ground | |
3 | GND | Ground | |
4 | GND | Ground | |
5 | GND | Ground | |
6 | RXEN | Input | RF switch RX control, connects to external MCU IO, valid in high level |
7 | TXEN | Input | RF switch TX control, connects to external MCU IO or DIO2, valid in high level |
8 | DIO2 | Input/Output | Configurable IO port (see SX126x datasheet) |
9 | VCC | Power supply, 2.5V~5.5V (external ceramic filter capacitor recommended) | |
10 | VCC | Power supply, 2.5V~5.5V (external ceramic filter capacitor recommended) | |
11 | GND | Ground | |
12 | GND | Ground | |
13 | DIO1 | Input/Output | Configurable IO port (see SX126x datasheet) |
14 | BUSY | Output | State indicator (see SX126x datasheet) |
15 | NRST | Input | Chip reset initiation, valid in low level |
16 | MISO | Output | SPI master input slave output |
17 | MOSI | Input | SPI master output slave input |
18 | SCK | Input | SPI clock |
19 | NSS | Input | Chip select, for starting SPI communication |
20 | GND | Ground | |
21 | ANT | Stamp hole (50 ohm impedance) | |
22 | GND | Ground |
Recommended Circuit Diagram
3.1. E22-433M22S/E22-900M22S
[Diagram showing MCU connections to E22-433M22S/E22-900M22S module]
3.2. E22-400M30S/E22-900M30S
[Diagram showing MCU connections to E22-400M30S/E22-900M30S module]
Production Guidance
4.1. Reflow Soldering Temperature
Profile Feature | Sn-Pb Assembly (Sn63/Pb37) | Pb-Free Assembly (Sn96.5/Ag3/Cu0.5) |
---|---|---|
Preheat Temperature min (Tsmin) | 100°C | 150°C |
Preheat temperature max (Tsmax) | 150°C | 200°C |
Preheat Time (Tsmin to Tsmax)(ts) | 60-120 sec | 60-120 sec |
Average ramp-up rate (Tsmax to Tp) | ≤3°C/second | ≤3°C/second |
Liquidous Temperature (TL) | 183°C | 217°C |
Time (tL) Maintained Above (TL) | 60-90 sec | 30-90 sec |
Peak temperature (Tp) | 220-235°C | 230-250°C |
Aveage ramp-down rate (Tp to Tsmax) | ≤6°C/second | ≤6°C/second |
Time 25°C to peak temperature | ≤6 minutes | ≤8 minutes |
4.2. Reflow Curving Diagram
[Diagram showing reflow soldering temperature profile over time]
FAQ
5.1. Communication range is too short
- Obstacles affect communication distance.
- Temperature, humidity, and co-channel interference impact data loss rate.
- Testing near ground can result in poor performance due to ground wave absorption and reflection.
- Seawater absorbs radio waves, leading to poor performance when testing near the sea.
- Antenna proximity to metal objects or placement within a metal case affects the signal.
- Incorrect power register settings or excessively high air data rates can shorten the distance.
- Low power supply voltage (below 2.5V) reduces transmitting power.
- Antenna quality or poor matching between the antenna and module can be a factor.
5.2. Module is easy to damage
- Ensure the power supply voltage is within the recommended range; exceeding it can damage the module.
- Verify the power supply stability; voltage fluctuations should be minimal.
- Use antistatic measures during installation and use, as high-frequency devices are susceptible to electrostatic discharge.
- Maintain humidity within the specified range, as some components are humidity-sensitive.
- Avoid operating modules at excessively high or low temperatures.
Important Notes
- All rights to interpret and modify this manual belong to Ebyte.
- This manual will be updated based on firmware and hardware upgrades; refer to the latest version.
- Visit the Ebyte website for new product information.
About Us
For technical support, contact: support@cdebyte.com
Download documents and RF settings from: www.cdebyte.com/en/
EBYTE Chengdu Ebyte Electronic Technology Co.,Ltd.
Tel: +86-28-61399028 Ext. 812
Fax: 028-64146160
Web: www.cdebyte.com/en/
Address: Innovation Center D347, 4# XI-XIN Road, Chengdu, Sichuan, China
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