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Owner's Manual for IXYS models including: CLE20E1200PC High Efficiency Thyristor, CLE20E1200PC, High Efficiency Thyristor, Efficiency Thyristor, Thyristor
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DocumentDocumentHigh Efficiency Thyristor SemiFast Single Thyristor Part number CLE20E1200PC Marking on Product: CLE20E1200PC 4 1 3 CLE20E1200PC VRRM = 1200 V I TAV = 20 A VT = 1.54 V Backside: anode ESD Level: H3B Features / Advantages: Thyristor for line and moderate frequencies Short turn-off time Planar passivated chip Long-term stability Applications: Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Package: TO-263 (D2Pak) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c Downloaded from Arrow.com. CLE20E1200PC Thyristor Ratings Symbol VRSM/DSM VRRM/DRM I R/D VT I TAV Definition Conditions max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current forward voltage drop average forward current VR/D = 1200 V VR/D = 1200 V IT = 20 A I T = 40 A IT = 20 A I T = 40 A TC = 95°C 180° sine TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125 °C TVJ = 150°C min. typ. max. Unit 1300 V 1200 V 100 µA 2 mA 1.54 V 2.03 V 1.54 V 2.17 V 20 A VT0 rT R thJC RthCH Ptot I TSM I²t CJ PGM PGAV (di/dt)cr (dv/dt)cr VGT IGT VGD IGD IL IH t gd tq threshold voltage slope resistance for power loss calculation only TVJ = 150°C thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current value for fusing junction capacitance max. gate power dissipation average gate power dissipation critical rate of rise of current critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VR = 400 V tP = 30 µs tP = 300 µs f = 1 MHz TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C TC = 150°C TVJ = 125 °C; f = 50 Hz repetitive, IT = 60 A tP = 200 µs; diG /dt =0.15 A/µs; IG = 0.15 A; V = VDRM non-repet., IT = 20 A V = VDRM TVJ = 125°C R GK = ; method 1 (linear voltage rise) VD = 6 V TVJ = 25°C TVJ = -40°C VD = 6 V TVJ = 25°C TVJ = -40°C VD = VDRM TVJ = 125°C latching current holding current gate controlled delay time turn-off time t p = 10 µs TVJ = 25 °C IG = 0.1 A; diG/dt = 0.1 A/µs VD = 6 V RGK = TVJ = 25 °C VD = ½ VDRM TVJ = 25 °C IG = 0.1 A; diG/dt = 0.1 A/µs VR = 20 V; IT = 20A; V = VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = 1000 V/µs tp = 200 µs 0.25 7 0.87 V 34 m 1 K/W K/W 125 W 160 A 175 A 135 A 145 A 130 A²s 125 A²s 91 A²s 87 A²s pF 5W 2.5 W 0.5 W 100 A/µs 500 A/µs 500 V/µs 1.5 V 2.5 V 40 mA 70 mA 0.2 V 3 mA 60 mA 50 mA 2 µs 100 µs IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c Downloaded from Arrow.com. Package TO-263 (D2Pak) Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature FC mounting force with clip Product Marking Part Number Logo Date Code Location Lot# XXXXXXXXX IXYS yywwZ 123456 Conditions per terminal CLE20E1200PC Ratings min. typ. max. Unit 35 A -40 150 °C -40 125 °C -40 150 °C 1.5 g 20 60 N Part description C = Thyristor (SCR) L = High Efficiency Thyristor E = Semifast (up to 1200V) 20 = Current Rating [A] E = Single Thyristor 1200 = Reverse Voltage [V] PC = TO-263AB (D2Pak) (2) Ordering Standard Alternative Ordering Number CLE20E1200PC-TRL CLE20E1200PC-TUB Marking on Product CLE20E1200PC CLE20E1200PC Delivery Mode Tape & Reel Tube Quantity Code No. 800 512774 50 523602 Equivalent Circuits for Simulation I V0 R0 Thyristor V 0 max R0 max threshold voltage slope resistance * 0.87 36 * on die level T VJ = 150°C V m IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c CLE20E1200PC Outlines TO-263 (D2Pak) W A c2 L1 E D A1 123 H Supplier Option 4 D1 L2 L 2x e 10.92 (0.430) c 3x b2 2x b mm (Inches) E1 9.02 (0.355) 1.78 (0.07) Dim. Millimeter min max Inches min max A 4.06 4.83 0.160 0.190 A1 typ. 0.10 typ. 0.004 A2 2.41 0.095 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 D2 2.5 0.098 E 9.65 10.41 0.380 0.410 E1 6.22 8.50 0.245 0.335 e 2,54 BSC 0,100 BSC e1 4.28 0.169 H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 1.02 1.68 0.040 0.066 W typ. 0.02 0.040 typ. 0.0008 0.002 All dimensions conform with and/or within JEDEC standard. 3.81 (0.150) 3.05 (0.120) 2.54 (0.100) Recommended min. foot print 4 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c CLE20E1200PC Thyristor 40 30 125°C 150°C 140 50 Hz, 80% VRRM 120 IT 20 [A] ITSM 100 [A] TVJ = 45°C 10 TVJ = 25°C 0 0.5 1.0 1.5 2.0 2.5 VT [V] Fig. 1 Forward characteristics 80 TVJ = 125°C 60 0.01 0.1 1 t [s] Fig. 2 Surge overload current 1000 VR = 0 V I2t 100 [A2s] TVJ = 45°C TVJ = 125°C 10 1 2 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time (1-10 ms) 100 1: IGD, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 10 VG [V] 1 3 2 1 1000 6 5 4 100 tgd [µs] 10 typ. Limit TVJ = 125°C 40 30 IT(AV)M 20 [A] 10 dc = 1 0.5 0.4 0.33 0.17 0.08 0.1 IGD, TVJ = 125°C 1 10 4: PGAV = 0.5 W 5: PGM = 2.5 W 6: PGM = 5 W 100 1000 1 10 IG [mA] 100 IG [mA] 1000 0 0 25 50 75 100 125 150 175 TC [°C] Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time Fig. 6 Max. forward current at case temperature 50 40 P(AV3) 0 [W]20 10 dc = 1 0.5 0.4 0.33 0.17 0.08 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 0 0 10 20 0 50 100 150 IT(AV) [A] Tamb [°C] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 1.2 1.0 0.8 ZthJC 0.6 [K/W] 0.4 0.2 0.0 100 Rthi [K/W] ti [s] 0.13 0.01 0.11 0.0011 0.26 0.025 0.25 0.32 0.25 0.09 101 102 103 104 t [ms] Fig. 8 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212c Downloaded from Arrow.com.