Vishay Intertechnology: Passives & Discrete Semiconductorsvishay.com/doc?91000vishay.com/doc?99912
Instruction Manual for VISHAY models including: IRFBC30A Power Mosfet, IRFBC30A, Power Mosfet, Mosfet
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DocumentDocumentwww.vishay.com IRFBC30A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.2 23 5.4 11 Single FEATURES · Low gate charge Qg results in simple drive requirement Available · Improved gate, avalanche, and dynamic dV/dt Available ruggedness · Fully characterized capacitance and avalanche voltage and current · Effective Coss specified · Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS · Switch mode power supply (SMPS) · Uninterruptable power supply · High speed power switching TYPICAL SMPS TOPOLOGY · Single Transistor flyback ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRFBC30APbF IRFBC30APbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 41 mH, Rg = 25 , IAS = 3.6 A (see fig. 12) c. ISD 3.6 A, dI/dt 170 A/s, VDD VDS, TJ 150 °C d. 1.6 mm from case LIMIT 600 ± 30 3.6 2.3 14 0.69 290 3.6 7.4 74 7.0 -55 to +150 300 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N · m S21-0868-Rev. C, 16-Aug-2021 1 Document Number: 91108 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com IRFBC30A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain) SYMBOL RthJA RthCS RthJC TYP. - 0.50 - MAX. 62 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 A Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 A VGS = ± 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 2.2 A b VDS = 50 V, ID = 2.2 A b 600 - - V - 0.67 - V/°C 2.0 - 4.5 V - - ± 100 nA - - 25 A - - 250 - - 2.2 2.1 - - S Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Output capacitance Coss Effective output capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance Drain-Source Body Diode Characteristics Coss eff. Qg Qgs Qgd td(on) tr td(off) tf Rg VGS = 0 V, - VDS = 25 V, - f = 1.0 MHz, see fig. 5 - VDS = 1.0 V, f = 1.0 MHz - VGS = 0 V VDS = 480 V, f = 1.0 MHz - VDS = 0 V to 480 V c - - VGS = 10 V ID = 3.6 A, VDS = 480 V see fig. 6 and 13 b - - 510 - 70 - 3.5 - pF 730 - 19 - 31 - - 23 - 5.4 nC - 11 - 9.8 - VDD = 300 V, ID = 3.6 A, Rg = 12 , RD = 82 , see fig. 10 b - 13 - ns - 19 - - 12 - f = 1 MHz, open drain 0.8 - 4.6 Continuous source-drain diode current Pulsed diode forward current a IS MOSFET symbol showing the integral reverse ISM p - n junction diode D G S - - 3.6 A - - 14 Body diode voltage VSD TJ = 25 °C, IS = 3.6 A, VGS = 0 V b - - 1.6 V Body diode reverse recovery time Body diode reverse recovery charge trr Qrr TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/s b - 400 600 ns 1.1 1.7 C Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s; duty cycle 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS S21-0868-Rev. C, 16-Aug-2021 2 Document Number: 91108 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 10 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 TJ = 150° C 1 1 IRFBC30A Vishay Siliconix I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) 0.1 0.01 0.1 4.5V 20s PULSE WIDTH TJ= 25 °C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics TJ = 25 °C 0.1 0.01 4.0 V DS= 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics I D, Drain-to-Source Current (A) 10 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 4.5V 0.1 0.1 20µs PULSE WIDTH TJ= 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 ID = 3.6A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature S21-0868-Rev. C, 16-Aug-2021 3 Document Number: 91108 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. C, Capacitance(pF) www.vishay.com 10000 1000 100 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss Coss 10 Crss 1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 ID = 3.6A 16 12 VDS = 480V VDS = 300V VDS = 120V 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 4 8 12 16 20 24 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage ID , Drain Current (A) ISD , Reverse Drain Current (A) IRFBC30A Vishay Siliconix 100 10 TJ = 150° C TJ = 25° C 1 0.1 0.4 VGS = 0 V 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 10us 100us 1 1ms TC = 25°C TJ = 150°C Single Pulse 0.1 10 100 10ms 1000 VDS , Drain-to-Source Voltage (V) 10000 Fig. 8 - Maximum Safe Operating Area VGS, Gate-to-Source Voltage (V) S21-0868-Rev. C, 16-Aug-2021 4 Document Number: 91108 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. ID , Drain Current (A) www.vishay.com 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig. 9 - Maximum Drain Current vs. Case Temperature 10 IRFBC30A Vishay Siliconix VDS VGS RG RD D.U.T. 10 V Pulse width 1 µs Duty factor 0.1 % +- VDD Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 0.00001 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 15 V VDS L Driver RG 20 V tp D.U.T IAS 0.01 + - VDAD Fig. 12a - Unclamped Inductive Test Circuit VDS tp IAS Fig. 12b - Unclamped Inductive Waveforms S21-0868-Rev. C, 16-Aug-2021 5 Document Number: 91108 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. V DSav , Avalanche Voltage ( V ) EAS , Single Pulse Avalanche Energy (mJ) www.vishay.com 700 ID TOP 1.6A 600 2.3A BOTTOM 3.6A 500 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current IRFBC30A Vishay Siliconix 740 720 700 680 660 640 0.0 1.0 2.0 3.0 4.0 IAV , Avalanche Current ( A) Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current 10 V QGS VG QG QGD Charge Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 12 V 50 k 0.2 µF 0.3 µF + D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit S21-0868-Rev. C, 16-Aug-2021 6 Document Number: 91108 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com D.U.T. + - Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations · Low stray inductance · Ground plane · Low leakage inductance current transformer - - + IRFBC30A Vishay Siliconix Rg · dV/dt controlled by Rg + · Driver same type as D.U.T. · ISD controlled by duty factor "D" - VDD · D.U.T. - device under test Driver gate drive P.W. Period D = P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Body diode forward drop Inductor current Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91108. S21-0868-Rev. C, 16-Aug-2021 7 Document Number: 91108 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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