Product Disclaimer for Littelfuse Electronic Components
User Guide for Littelfuse models including: CS30-12io1 Semiconductor Thyristor, CS30-12io1, Semiconductor Thyristor, Thyristor
CS30-12IO1 Littelfuse - RADIOMAG GmbH
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DocumentDocumentThyristor Single Thyristor Part number CS30-12io1 CS30-12io1 VRRM = 1200 V I TAV = 30 A VT = 1.3 V 2 1 3 Backside: anode Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability Applications: Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Package: TO-247 Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c Downloaded from Arrow.com. CS30-12io1 Thyristor Ratings Symbol VRSM/DSM VRRM/DRM I R/D VT I TAV I T(RMS) VT0 rT R thJC RthCH Ptot I TSM I²t CJ PGM PGAV (di/dt)cr (dv/dt)cr VGT IGT VGD IGD IL IH t gd tq Definition Conditions max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current VR/D = 1200 V VR/D = 1200 V forward voltage drop IT = 30 A I T = 60 A IT = 30 A I T = 60 A average forward current TC = 120°C RMS forward current 180° sine threshold voltage slope resistance for power loss calculation only TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C min. TVJ = 125 °C TVJ = 150°C TVJ = 150°C thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current value for fusing junction capacitance max. gate power dissipation average gate power dissipation critical rate of rise of current critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current latching current holding current gate controlled delay time turn-off time t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VR = 400 V tP = 30 µs tP = 300 µs f = 1 MHz TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C TC = 150°C TVJ = 125 °C; f = 50 Hz repetitive, IT = 90 A tP = 200 µs; diG /dt = 0.3 A/µs; IG = 0.3 A; V = VDRM non-repet., IT = 30 A V = VDRM TVJ = 125°C R GK = ; method 1 (linear voltage rise) VD = 6 V TVJ = 25°C TVJ = -40°C VD = 6 V TVJ = 25°C TVJ = -40°C VD = VDRM TVJ = 125°C t p = 10 µs TVJ = 25 °C IG = 0.3 A; diG/dt = 0.3 A/µs VD = 6 V RGK = TVJ = 25 °C VD = ½ VDRM TVJ = 25 °C IG = 0.3 A; diG/dt = 0.3 A/µs VR = 100 V; IT = 30A; V = VDRM TVJ =125 °C di/dt = 15 A/µs dv/dt = 20 V/µs tp = 200 µs typ. max. Unit 1300 V 1200 V 50 µA 2 mA 1.30 V 1.63 V 1.30 V 1.71 V 30 A 47 A 0.87 V 14.2 m 0.5 K/W 0.3 K/W 250 W 400 A 430 A 340 A 365 A 800 A²s 770 A²s 580 A²s 555 A²s 16 pF 10 W 5W 0.5 W 150 A/µs 500 A/µs 1000 V/µs 1V 1.2 V 55 mA 80 mA 0.2 V 5 mA 150 mA 100 mA 2 µs 150 µs IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c Downloaded from Arrow.com. Package TO-247 Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Product Marking Conditions per terminal Logo Part Number Date Code Lot# Location IXYS XXXXXXXXX yywwZ 1234 CS30-12io1 Ratings min. typ. max. Unit 70 A -40 150 °C -40 125 °C -40 150 °C 6 g 0.8 1.2 Nm 20 120 N Ordering Standard Ordering Number CS30-12io1 Marking on Product CS30-12io1 Delivery Mode Tube Quantity Code No. 30 466565 Similar Part CS30-14io1 CS30-16io1 CLA30E1200HB Package TO-247AD (3) TO-247AD (3) TO-247AD (3) Voltage class 1400 1600 1200 Equivalent Circuits for Simulation I V0 R0 Thyristor V 0 max R0 max threshold voltage slope resistance * 0.87 11.7 * on die level T VJ = 150°C V m IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c CS30-12io1 Outlines TO-247 E Q A A2 ØP S D 2x E2 123 L1 L 2x b2 b4 2x e 3x b C A1 Ø P1 D2 D1 4 E1 Sym. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 Inches min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 - 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 - - 0.29 Millimeter min. max. 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 - 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 - 0.51 1.35 13.45 - - 7.39 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c CS30-12io1 Thyristor 80 60 IT 40 [A] 20 125°C 150°C TVJ = 25°C 0 0,5 1,0 1,5 2,0 VT [V] Fig. 1 Forward characteristics 400 50 Hz, 80% VRRM 350 300 ITSM 250 [A] 200 150 TVJ = 125°C TVJ = 45°C 100 0,01 0,1 1 t [s] Fig. 2 Surge overload current 1000 VR = 0 V I2t [A2s] TVJ = 45°C TVJ = 125°C 100 1 2 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time (1-10 ms) 10 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 1 23 [V] 1 1000 6 5 4 100 tgd [µs] 10 typ. Limit TVJ = 125°C 80 60 IT(AV)M 40 [A] 20 dc = 1 0.5 0.4 0.33 0.17 0.08 4: PGAV = 0.5 W 5: PGM = 5 W 0,1 6: PGM = 10 W 1 1 10 100 1000 10000 10 IG [mA] 100 IG [mA] 1000 0 0 25 50 75 100 125 150 TC [°C] Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time Fig. 6 Max. forward current at case temperature 60 50 40 P(AV) 30 dc = 1 0.5 0.4 0.33 0.17 0.08 [W] 20 RthHA 0.6 0.8 1.0 2.0 4.0 8.0 10 0 0 10 20 30 40 0 IT(AV) [A] 50 100 150 Tamb [°C] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0,6 0,4 ZthJC [K/W] 0,2 0,0 100 Rthi [K/W] ti [s] 0.08 0.01 0.06 0.0001 0.2 0.02 0.05 0.2 0.11 0.11 101 102 103 104 t [ms] Fig. 8 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c Downloaded from Arrow.com. CS30-12io1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129c