VISHAY SUM70030M Discrete Semiconductor User Guide

User Guide for VISHAY models including: SUM70030M Discrete Semiconductor, SUM70030M, Discrete Semiconductor, Semiconductor
SUM70 купити - РКС Компоненти - РАДІОМАГ
File Info : application/pdf, 8 Pages, 283.83KB
sum70030m
www.vishay.com

SUM70030M
Vishay Siliconix

N-Channel 100 V (D-S) MOSFET

TO-263 7-Lead

Drain conntected
to tab Top View

D SSS GSS

PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) d Configuration

100 0.0035 0.0037 142.4
150 Single

FEATURES
· TrenchFET® power MOSFET
· Maximum 175 °C junction temperature
· Very low Qgd reduces power loss from passing through Vplateau
· 100 % Rg and UIS tested · Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS

D

· Power supply - Secondary synchronous rectification

· DC/DC converter

· Power tools

G

· Motor drive switch

· DC/AC inverter · Battery management · OR-ing / e-fuse

S N-Channel MOSFET

ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free

D2PAK (TO-263-7L) SUM70030M-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-source voltage

VDS

Gate-source voltage

VGS

Continuous drain current (TJ = 150 °C)

TC = 25 °C TC = 70 °C

ID

Pulsed drain current (t = 100 µs)

IDM

Avalanche current Single avalanche energy a

IAS

L = 0.1 mH

EAS

Maximum power dissipation a

TC = 25 °C TC = 125 °C

Operating junction and storage temperature range

PD TJ, Tstg

LIMIT 100 ± 20 150 d 150 d 500 60 180 375 b 125 b
-55 to +175

UNIT V
A
mJ W °C

THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-ambient (PCB mount) c Junction-to-case (drain)
Notes a. Duty cycle  1 % b. See SOA curve for voltage derating c. When mounted on 1" square PCB (FR4 material) d. Package limited

SYMBOL RthJA RthJC

LIMIT 40 0.4

UNIT °C/W

S20-0694-Rev. A, 14-Sep-2020

1

Document Number: 77104

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Downloaded from Arrow.com.

www.vishay.com

SUM70030M
Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Static

Drain-source breakdown voltage Gate threshold voltage Gate-body leakage
Zero gate voltage drain current
On-state drain current a Drain-source on-state resistance a Forward transconductance a Dynamic b

VDS VGS(th) IGSS
IDSS
ID(on) RDS(on)
gfs

VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 °C VDS = 100 V, VGS = 0 V, TJ = 175 °C VDS  10 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 7.5 V, ID = 20 A VDS = 15 V, ID = 30 A

Input capacitance

Ciss

Output capacitance

Coss

VGS = 0 V, VDS = 50 V, f = 1 MHz

Reverse transfer capacitance

Crss

Total gate charge c

Qg

Gate-source charge c

Qgs

VDS = 50 V, VGS = 10 V, ID = 20 A

Gate-drain charge c

Qgd

Output charge

Qoss

VDS = 50 V, VGS = 0 V

Gate resistance

Rg

f = 1 MHz

Turn-on delay time c

td(on)

Rise time c Turn-off delay time c

tr td(off)

VDD = 50 V, RL = 3  ID  10 A, VGEN = 10 V, Rg = 1 

Fall time c

tf

Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)

Pulsed current (t = 100 µs) Forward voltage a Reverse recovery time Peak reverse recovery charge Reverse recovery charge Reverse recovery fall time Reverse recovery rise time

ISM VSD trr IRM(REC) Qrr ta tb

IF = 10 A, VGS = 0 V IF = 34 A, di/dt = 100 A/µs

Notes a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature

MIN.
100 2 -
120 -
0.34 -
-

TYP.

MAX.

0.0029 0.0031 110

4 ± 250 1 150 5 0.0035 0.0037 -

10 870

-

820

-

40

-

142.4

214

46.8

-

18.5

-

138

207

1.7

3.4

30

60

13

26

50

100

15

30

-

250

0.8

1.5

76

150

4.6

5.6

0.205

0.24

52

-

24

-

UNIT
V nA µA mA A  S
pF
nC

ns
A V ns A µC ns

  Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

S20-0694-Rev. A, 14-Sep-2020

2

Document Number: 77104

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Downloaded from Arrow.com.

www.vishay.com

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

2nd line ID - Drain Current (A)

200 150 100
50 0 0

Axis Title VGS = 10 V thru 6 V

VGS = 5 V

10000

1000

100

VGS = 4 V

1

2

3

VDS - Drain-to-Source Voltage (V)

Output Characteristics

10 4

1st line 2nd line 2nd line ID - Drain Current (A)

100 80 60 40 20 0 0

2nd line gfs - Transconductance (S)

Axis Title 150
TC = -55 °C

120 TC = 25 °C

90

TC = 125 °C

10000 1000

60 100
30

1st line 2nd line 2nd line RDS(on) - On-Resistance ()

0.005 0.004 0.003 0.002

SUM70030M
Vishay Siliconix

1st line 2nd line

Axis Title

10000

1000

TC = 25 °C TC = 125 °C

TC = -55 °C

1.6

3.2

4.8

6.4

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

Axis Title

100 10 8
10000

VGS = 7.5 V

1000 VGS = 10 V 100

1st line 2nd line

1st line 2nd line

1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V)

0

10

0 10.0 20.0 30.0 40.0 50.0 60.0

ID - Drain Current (A)

Transconductance

10 000

Axis Title

10000 Ciss

Coss 1000

1000

Crss 100

100

0.001 0

50

100

150

ID - Drain Current (A)

10 200

On-Resistance vs. Drain Current

10 ID = 20 A
8
6
4
2

Axis Title

10000

1000 VDS = 25 V, 50 V, 80 V
100

2nd line C - Capacitance (pF)

10 0

20

40

60

80

VDS - Drain-to-Source Voltage (V)

Capacitance

10 100

0

10

0

30

60

90

120 150

Qg - Total Gate Charge (nC)

Gate Charge

S20-0694-Rev. A, 14-Sep-2020

3

Document Number: 77104

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Downloaded from Arrow.com.

www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

SUM70030M
Vishay Siliconix

1st line 2nd line

2nd line RDS(on) - On-Resistance (Normalized)

Axis Title

2.5

10000

VGS = 10 V, 30 A 2.1

1000 1.7

1.3 VGS = 7.5 V, 20 A 100
0.9

1st line 2nd line 2nd line IS - Source Current (A)

Axis Title 100

10 TJ = 150 °C
1

TJ = 25 °C

0.1

10000 1000 100

0.5

10

-50 -25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

0.01 0

0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V)

10 1.2

Source Drain Diode Forward Voltage

1st line 2nd line

2nd line RDS(on) - On-Resistance ()

0.010 0.008 0.006 0.004 0.002

Axis Title

ID = 30 A

10000

1000 TJ = 125 °C

TJ = 25 °C

100

1st line 2nd line
2nd line VGS(th) (V)

Axis Title

3.5

10000

ID = 250 A

3.0

1000 2.5

2.0 100
1.5

0

10

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

117 ID = 250 A
114

Axis Title

111

108

10000 1000 100

1st line 2nd line 2nd line ID - Drain Current (A)

1.0

10

-50 -25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Threshold Voltage

Axis Title

260

10000

195

130

Package limited

65

1000 100

1st line 2nd line

2nd line VDS - Drain-to-Source Voltage (V)

105

10

-50 -25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Drain Source Breakdown vs. Junction Temperature

0

10

0 25 50 75 100 125 150 175

TC - Case Temperature (°C)

Current Derating

S20-0694-Rev. A, 14-Sep-2020

4

Document Number: 77104

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Downloaded from Arrow.com.

www.vishay.com

THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Axis Title

1000 IDM limited

10000

100

SUM70030M
Vishay Siliconix

1st line 2nd line 2nd line IDAV - Drain Current Avalanche (A)

2nd line ID - Drain Current (A)

100

Limited by RDS(on) a

100 s

1000

10

1 ms

100

TC = 25 °C, single pulse

1

0.1

1

10 ms

DC, 10 s, 1 s, 100 ms BVDSS limited

10

10

100

1000

VDS - Drain-to-Source Voltage (V)

Safe Operating Area

Note a. VGS > minimum VGS at which RDS(on)

150 °C

25 °C

10

0.00001

0.0001

0.001

0.01

t - Time (s)

Single Pulse Avalanche Current Capability vs. Time

1 Duty cycle = 0.5

Normalized Effective Transient Thermal Impedance

0.2

0.1

0.1

0.05

0.02

Single pulse

0.01

10-4

10-3

10-2 Square Wave Pulse Duration (s)

Notes:

PDM

t1

t2 1. Duty Cycle, D =

t1 t2

2. Per Unit Base = RthJA = 40 °C/W

3. TJM - TA = PDMZthJA(t)

4. Surface Mounted

10-1

1

Normalized Thermal Transient Impedance, Junction-to-Case
Note
· The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77104.

S20-0694-Rev. A, 14-Sep-2020

5

Document Number: 77104

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Downloaded from Arrow.com.

www.vishay.com

Package Information
Vishay Siliconix

D2PAK (TO-263-7L) Case Outline

Notes
1. Plane B includes maximum features of heat sink tab and plastic 2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils 3. Pin to pin coplanarity max. 4 mils 4. Lead thickness 25 mils 5. For SUM part numbers lead thickness is 24 mils to 29 mils 6. For reference only 7. Use inches as the primary measurement 8. This feature is only for SUM

INCHES

DIM.

MIN.

MAX.

A

0.160

0.190

b

0.020

0.039

b1

0.020

0.035

c* SUB

0.012

0.018

c* SUM

0.022

0.028

c1

0.018

0.025

c2

0.045

0.055

D

0.340

0.380

D1

0.260

0.280

D2

0.046

0.050

D3

0.045

0.055

E

0.380

0.410

E1

0.245

-

E2

0.072

0.078

e

0.050 BSC

K

0.045

0.055

L

0.575

0.625

L1

0.090

0.110

L2

0.040

0.055

L3

0.050

0.070

L4

0.010 BSC

M

-

0.002

ECN: T22-0410-Rev. D, 19-Sep-2022 DWG: 6006

MILLIMETERS

MIN.

MAX.

4.064

4.826

0.508

0.990

0.508

0.889

0.305

0.457

0.559

0.711

0.457

0.635

1.143

1.397

8.636

9.652

6.604

7.112

1.168

1.270

1.143

1.397

9.652

10.414

6.223

-

1.829

1.981

1.27 BSC

1.143

1.397

14.605

15.875

2.286

2.794

1.016

1.397

1.270

1.778

0.254 BSC

-

0.050

Revision: 19-Sep-2022

1

Document Number: 63782

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Downloaded from Arrow.com.

www.vishay.com

PAD Pattern
Vishay Siliconix

Recommended Land Pattern D2PAK (TO-263-7L)

0.420 (10.668)

0.355 (9.017)

0.635 (16.129)

0.145 (3.683)

0.061 (1.540)

0.135 (3.429)

0.050 (1.270)

0.339 (8.620)

0.039 (1.000)

Revision: 23-Jul-2020

1

Document Number: 77341

For technical questions, contact: pmostechsupport@vishay.comgz

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Downloaded from Arrow.com.

www.vishay.com

Disclaimer

Legal Disclaimer Notice
Vishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2024

1

Document Number: 91000

For technical questions, contact:

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Downloaded from Arrow.com.
References
