Vishay Intertechnology: Passives & Discrete Semiconductorsvishay.com/doc?91000vishay.com/doc?99912
Owner's Manual for VISHAY models including: SUM70030E, SUM70030E-GE3, SUM70030E N-Channel MOSFET, SUM70030E, N-Channel MOSFET, MOSFET
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DocumentDocumentwww.vishay.com SUM70030E Vishay Siliconix N-Channel 100 V (D-S) MOSFET TO-263 Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 100 0.00288 0.00348 142.4 150 d Single FEATURES · TrenchFET® power MOSFET · Maximum 175 °C junction temperature · Very low Qgd reduces power loss from passing through Vplateau · 100 % Rg and UIS tested · Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS · Power supply - Secondary synchronous rectification · DC/DC converter · Power tools · Motor drive switch · DC/AC inverter · Battery management · OR-ing / e-fuse D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TO-263 SUM70030E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed drain current (t = 100 µs) IDM Avalanche current Single avalanche energy a IAS L = 0.1 mH EAS Maximum power dissipation a TC = 25 °C TC = 125 °C Operating junction and storage temperature range PD TJ, Tstg LIMIT 100 ± 20 150 d 150 d 500 60 180 375 b 125 b -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient (PCB mount) c Junction-to-case (drain) Notes a. Duty cycle 1 % b. See SOA curve for voltage derating c. When mounted on 1" square PCB (FR4 material) d. Package limited SYMBOL RthJA RthJC LIMIT 40 0.4 UNIT °C/W S18-1020-Rev. A, 08-Oct-2018 1 Document Number: 76957 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com SUM70030E Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-source breakdown voltage Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a Dynamic b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 °C VDS = 100 V, VGS = 0 V, TJ = 175 °C VDS 10 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 7.5 V, ID = 20 A VDS = 15 V, ID = 30 A Input capacitance Output capacitance Reverse transfer capacitance Total gate charge c Gate-source charge c Gate-drain charge c Output charge Ciss Coss Crss Qg Qgs Qgd Qoss VGS = 0 V, VDS = 50 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 20 A VDS = 50 V, VGS = 0 V Gate resistance Rg f = 1 MHz Turn-on delay time c td(on) Rise time c Turn-off delay time c tr td(off) VDD = 50 V, RL = 3 ID 10 A, VGEN = 10 V, Rg = 1 Fall time c tf Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed current (t = 100 µs) ISM Forward voltage a VSD IF = 10 A, VGS = 0 V Reverse recovery time trr Peak reverse recovery charge Reverse recovery charge IRM(REC) Qrr IF = 34 A, di/dt = 100 A/µs Reverse recovery fall time ta Reverse recovery rise time tb Notes a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature MIN. TYP. MAX. UNIT 100 - - V 2 - 4 - - ± 250 nA - - 1 µA - - 150 - - 5 mA 120 - - A - 0.00240 0.00288 - 0.00290 0.00348 - 110 - S - 10 870 - - 820 - pF - 40 - - 142.4 214 - 46.8 - nC - 18.5 - - 138 207 0.34 1.7 3.4 - 30 60 - 13 26 ns - 50 100 - 15 30 - - 250 A - 0.8 1.5 V - 76 150 ns - 4.6 5.6 A - 0.205 0.24 µC - 52 - ns - 24 - Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1020-Rev. A, 08-Oct-2018 2 Document Number: 76957 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) SUM70030E Vishay Siliconix 1st line 2nd line 2nd line ID - Drain Current (A) 200 150 100 50 0 0 Axis Title VGS = 10 V thru 6 V VGS = 5 V 10000 1000 100 VGS = 4 V 1 2 3 VDS - Drain-to-Source Voltage (V) Output Characteristics 10 4 1st line 2nd line 2nd line ID - Drain Current (A) Axis Title 100 10000 80 1000 60 40 20 0 0 TC = 25 °C TC = 125 °C TC = -55 °C 1.6 3.2 4.8 6.4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 100 10 8 1st line 2nd line 2nd line gfs - Transconductance (S) Axis Title 150 TC = -55 °C 120 TC = 25 °C 90 TC = 125 °C 10000 1000 60 100 30 0 10 0 10.0 20.0 30.0 40.0 50.0 60.0 ID - Drain Current (A) Transconductance 1st line 2nd line 2nd line RDS(on) - On-Resistance () 0.005 Axis Title 10000 0.004 0.003 0.002 VGS = 7.5 V 1000 VGS = 10 V 100 0.001 0 50 100 150 ID - Drain Current (A) 10 200 On-Resistance vs. Drain Current 1st line 2nd line 2nd line C - Capacitance (pF) 10 000 1000 Axis Title Coss Crss 100 10000 Ciss 1000 100 10 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance 10 100 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 10 ID = 20 A 8 6 4 2 Axis Title 10000 1000 VDS = 25 V, 50 V, 80 V 100 0 10 0 30 60 90 120 150 Qg - Total Gate Charge (nC) Gate Charge S18-1020-Rev. A, 08-Oct-2018 3 Document Number: 76957 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) SUM70030E Vishay Siliconix 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) Axis Title 2.5 10000 VGS = 10 V, 30 A 2.1 1000 1.7 1.3 VGS = 7.5 V, 20 A 100 0.9 1st line 2nd line 2nd line IS - Source Current (A) Axis Title 100 10 TJ = 150 °C 1 TJ = 25 °C 0.1 10000 1000 100 0.5 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 0.01 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 10 1.2 Source Drain Diode Forward Voltage 1st line 2nd line 2nd line RDS(on) - On-Resistance () 0.010 0.008 0.006 0.004 0.002 Axis Title ID = 30 A 10000 1000 TJ = 125 °C TJ = 25 °C 100 0 10 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 1st line 2nd line 2nd line VGS(th) (V) Axis Title 3.5 10000 ID = 250 A 3.0 1000 2.5 2.0 100 1.5 1.0 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Threshold Voltage 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 117 ID = 250 A 114 Axis Title 111 108 10000 1000 100 1st line 2nd line 2nd line ID - Drain Current (A) Axis Title 260 195 130 Package limited 65 10000 1000 100 105 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 0 10 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current De-rating S18-1020-Rev. A, 08-Oct-2018 4 Document Number: 76957 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 100 IDM limited SUM70030E Vishay Siliconix 1st line 2nd line 2nd line IDAV - Drain Current Avalanche (A) 2nd line ID - Drain Current (A) 100 Limited by RDS(on) a 100 s 1000 10 1 ms 100 TC = 25 °C, single pulse 1 0.1 1 10 ms DC, 10 s, 1 s, 100 ms BVDSS limited 10 10 100 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified 150 °C 25 °C 10 0.00001 0.0001 0.001 0.01 t - Time (s) Single Pulse Avalanche Current Capability vs. Time 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note · The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual pplication parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76957. S18-1020-Rev. A, 08-Oct-2018 5 Document Number: 76957 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com Package Information Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- E A c2 E1 6 L2 -A- K E3 D2 D3 D1 D4 L L3 D AA b2 e b Detail "A" c E2 0.010 M A M 2 PL M 0° - 5° L 4 L1 DETAIL A (ROTATED 90°) b b1 SECTION A-A Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. c1 c INCHES DIM. MIN. MAX. A 0.160 0.190 b 0.020 0.039 b1 0.020 0.035 b2 0.045 0.055 Thin lead c* Thick lead 0.013 0.023 0.018 0.028 Thin lead c1 Thick lead 0.013 0.023 0.017 0.027 c2 0.045 0.055 D 0.340 0.380 D1 0.220 0.240 D2 0.038 0.042 D3 0.045 0.055 D4 0.044 0.052 E 0.380 0.410 E1 0.245 - E2 0.355 0.375 E3 0.072 0.078 e 0.100 BSC K 0.045 0.055 L 0.575 0.625 L1 0.090 0.110 L2 0.040 0.055 L3 0.050 0.070 L4 0.010 BSC M - 0.002 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 MILLIMETERS MIN. MAX. 4.064 4.826 0.508 0.990 0.508 0.889 1.143 1.397 0.330 0.457 0.584 0.711 0.330 0.431 0.584 0.685 1.143 1.397 8.636 9.652 5.588 6.096 0.965 1.067 1.143 1.397 1.118 1.321 9.652 10.414 6.223 - 9.017 9.525 1.829 1.981 2.54 BSC 1.143 1.397 14.605 15.875 2.286 2.794 1.016 1.397 1.270 1.778 0.254 BSC - 0.050 Revison: 30-Sep-13 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 (10.668) AN826 Vishay Siliconix 0.635 (16.129) 0.355 (9.017) Return to Index 0.135 (3.429) 0.200 (5.080) 0.145 (3.683) 0.050 (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 73397 11-Apr-05 Downloaded from Arrow.com. www.vishay.com 1 www.vishay.com Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. 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ALL RIGHTS RESERVED Revision: 01-Jul-2024 1 Document Number: 91000 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com.