Owner's Manual for onsemi models including: NVBLS1D1N08H, NVBLS1D1N08H Power Single N-Channel MOSFET, Power Single N-Channel MOSFET, Single N-Channel MOSFET, N-Channel MOSFET, MOSFET
NVBLS1D1N08H onsemi - РКС Компоненти - РАДІОМАГ
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DocumentDocumentMOSFET - Power, Single N-Channel, TOLL 80 V, 1.05 mW, 351 A NVBLS1D1N08H Features · Low RDS(on) to Minimize Conduction Losses · Low QG and Capacitance to Minimize Driver Losses · AEC-Q101 Qualified and PPAP Capable · Lowers Switching Noise/EMI · These Devices are Pb-Free and are RoHS Compliant Typical Applications · Power Tools, Battery Operated Vacuums · UAV/Drones, Material Handling · BMS/Storage, Home Automation MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage VDSS 80 V VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 351 A 248 311 W 156 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 41 A 29 4.2 W 2.1 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg - 55 to °C +175 Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 31.9 A) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) IS 259 A EAS 1580 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction-to-Case - Steady State Junction-to-Ambient - Steady State (Note 2) RqJC RqJA 0.48 °C/W 35.8 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. www.onsemi.com V(BR)DSS 80 V RDS(ON) MAX 1.05 mW @ 10 V ID MAX 351 A D G S N-CHANNEL MOSFET TOLL CASE 100CU MARKING DIAGRAM AYWWZZ NVBLS 1D1N08H NVBLS1D1N08H = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2019 1 March, 2020 - Rev. 2 Downloaded from Arrow.com. Publication Order Number: NVBLS1D1N08H/D NVBLS1D1N08H ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS V(BR)DSS/ TJ VGS = 0 V, ID = 250 mA 80 57 V mV/°C Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 4) IDSS IGSS VGS = 0 V, VDS = 80 V TJ = 25 °C TJ = 125°C VDS = 0 V, VGS = 20 V 10 mA 250 100 nA Gate Threshold Voltage VGS(TH) Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS CHARGES, CAPACITANCES & GATE RESISTANCE VGS = VDS, ID = 650 mA VGS = 10 V ID = 50 A VDS =5 V, ID = 50 A 2.0 2.9 4.0 V -7.7 mV/°C 0.92 1.05 mW 213 S Input Capacitance CISS 11200 Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 40 V 1600 pF Reverse Transfer Capacitance CRSS 49 Total Gate Charge QG(TOT) 166 Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge QG(TH) 29 nC QGS VGS = 10 V, VDS = 64 V; ID = 50 A 44 QGD 35 Plateau Voltage VGP 4 V SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time td(ON) 45 Rise Time Turn-Off Delay Time tr td(OFF) VGS = 10 V, VDS = 64 V, ID = 50 A, RG = 6 W 43 ns 141 Fall Time tf 43 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS = 50 A TJ = 125°C 0.76 1.2 V 0.6 Reverse Recovery Time Reverse Recovery Charge tRR QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A 92 ns 234 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. Downloaded from Arrow.com. www.onsemi.com 2 ID, DRAIN CURRENT (A) RDS(on), ON-RESISTANCE (mW) NVBLS1D1N08H TYPICAL CHARACTERISTICS 250 10 V to 6 V 200 5.0 V 150 VGS = 4.5 V 100 50 4.0 V 0 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 20 TJ = 25°C ID = 50 A 15 10 5 ID, DRAIN CURRENT (A) 250 VDS = 5 V 200 150 TJ = 25°C 100 50 TJ = 175°C 0 TJ = -55°C 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics 2.0 1.5 1.0 VGS = 10 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 0 3 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 3. On-Resistance vs. Gate-to-Source Voltage 0.5 0 50 100 150 200 250 ID, DRAIN CURRENT (A) Figure 4. On-Resistance vs. Drain Current and Gate Voltage 2.4 2.2 VGS = 10 V ID = 50 A 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On-Resistance Variation with Temperature IDSS, REVERSE LEAKAGE CURRENT (A) 1E-03 1E-04 1E-05 1E-06 TJ = 175°C TJ = 150°C TJ = 125°C TJ = 100°C TJ = 85°C 1E-07 1E-08 TJ = 25°C 1E-09 5 15 25 35 45 55 65 75 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6. Drain-to-Source Leakage Current vs. Voltage RDS(on), NORMALIZED DRAIN-TO- SOURCE ON-RESISTANCE Downloaded from Arrow.com. www.onsemi.com 3 C, CAPACITANCE (pF) t, SWITCHING TIME (ns) NVBLS1D1N08H TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 100K 10K 1K CISS COSS 10 8 6 QGS 4 QG(tot) QGD 100 VGS = 0 V f = 1 MHz CRSS 10 0.1 1 10 80 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 VGS = 10 V VDS = 64 V ID = 50 A 100 td(off) tf tr td(on) 2 TJ = 25°C ID = 50 A VDS = 64 V 0 0 40 80 120 160 200 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate-to-Source Voltage vs. Total Charge 250 100 VGS = 0 V 10 1 0.1 TJ = 175°C IS, REVERSE DRAIN CURRENT (A) 10 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 0.01 0.001 0 TJ = 25°C 0.2 0.4 TJ = -55°C 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current 1000 100 10 ms 10 TC = 25°C Single Pulse VGS 10 V 1 0.1 0.1 RDS(on) Limit Thermal Limit Package Limit 1 10 0.5 ms 1 ms 10 ms 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area IPEAK (A) 100 TJ(initial) = 25°C 10 TJ(initial) = 100°C 1 0.0001 0.001 0.01 tAV, TIME IN AVALANCHE (s) Figure 12. Maximum Drain Current vs. Time in Avalanche ID, DRAIN CURRENT (A) Downloaded from Arrow.com. www.onsemi.com 4 R(t) (°C/W) NVBLS1D1N08H TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 10 0.2 0.1 0.05 1 0.02 0.01 0.1 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 TIME (s) Figure 13. Transient Thermal Impedance 10 100 1000 DEVICE ORDERING INFORMATION Device Marking Package Shipping NVBLS1D1N08H NVBLS 1D1N08H M0-299A (Pb-Free) 2000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Downloaded from Arrow.com. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS H-PSOF8L 11.68x9.80 CASE 100CU ISSUE C DATE 22 MAY 2023 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXXX XXXXXXXX A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code XXXX = Specific Device Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: 98AON13813G DESCRIPTION: H-PSOF8L 11.68x9.80 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. 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