Infineon EasyDUAL Module FF33MR12W1M1H_B11

Preliminary Datasheet

EasyDUAL module with CoolSiC™ Trench MOSFET and PressFIT / NTC

Features

• Electrical features:
  • VDSS = 1200 V
  • IDN = 25 A / IDRM = 50 A
  • Low inductive design
  • Low switching losses
• Mechanical features:
  • Rugged mounting due to integrated mounting clamps
  • PressFIT contact technology
  • Integrated NTC temperature sensor

Potential applications

• High-frequency switching application
• DC/DC converter
• Motor drives
• UPS systems

Product validation

Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068.

Description

The Infineon EasyDUAL module FF33MR12W1M1H_B11 is a high-performance power module designed for various industrial applications. It integrates CoolSiC™ Trench MOSFETs and a PressFIT/NTC component, offering excellent electrical and mechanical characteristics.

1 Package

Table 1: Insulation coordination

Table 2: Characteristic values

Note: The current under continuous operation is limited to 25 A rms per connector pin.

2 MOSFET

Table 3: Maximum rated values

Table 4: Recommended values

Table 5: Characteristic values

Table 5: (continued) Characteristic values

Note: The selection of positive and negative gate-source voltages impacts losses and the long-term behavior of the MOSFET and body diode. The design guidelines described in Application Notes AN 2018-09 and AN 2021-13 must be considered to ensure sound operation of the device over the planned lifetime. T_vj,op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed specifications, please refer to AN 2021-13.

3 Body diode

Table 6: Maximum rated values

4 NTC-Thermistor

Table 7: Characteristic values

Table 8: Characteristic values

Note: Specification according to the valid application note.

5 Characteristics diagrams

Output characteristic (typical), MOSFET

ID = f(VDS), VGS = 18 V

[Graph: Output characteristic ID vs VDS for VGS=18V at different temperatures (25°C, 125°C, 175°C)]

Output characteristic (typical), MOSFET

ID = f(VDS), VGS = 15 V

[Graph: Output characteristic ID vs VDS for VGS=15V at different temperatures (25°C, 125°C, 175°C)]

Drain source on-resistance (typical), MOSFET

RDS(on) = f(ID), VGS = 18 V

[Graph: Drain source on-resistance RDS(on) vs Drain current ID for VGS=18V at different temperatures (25°C, 125°C, 175°C)]

Drain source on-resistance (typical), MOSFET

RDS(on) = f(Tvj), ID = 25 A

[Graph: Drain source on-resistance RDS(on) vs Temperature Tvj for ID=25A at different VGS (15V, 18V)]

Output characteristic field (typical), MOSFET

ID = f(VDS), Tvj = 175 °C

[Graph: Output characteristic ID vs VDS for Tvj=175°C at various VGS values (7V to 20V)]

Transfer characteristic (typical), MOSFET

ID = f(VGS), VDS = 20 V

[Graph: Transfer characteristic ID vs VGS for VDS=20V at different temperatures (25°C, 125°C, 175°C)]

Gate-source threshold voltage (typical), MOSFET

VGS(th) = f(Tvj), VGS = VDS, ID = 10 mA

[Graph: Gate-source threshold voltage VGS(th) vs Temperature Tvj]

Gate charge characteristic (typical), MOSFET

VGS = f(QG), ID = 25 A, Tvj = 25 °C, VDD = 800 V

[Graph: Gate charge characteristic VGS vs QG]

Capacity characteristic (typical), MOSFET

C = f(VDS), Tvj = 25 °C, f = 100 kHz, VGS = 0 V

[Graph: Capacity characteristic Ciss, Coss, Cres vs VDS]

Forward characteristic body diode (typical), MOSFET

ISD = f(VSD), Tvj = 25 °C

[Graph: Forward characteristic ISD vs VSD for different VGS values (-5V to 18V)]

Forward voltage of body diode (typical), MOSFET

VSD = f(Tvj), ISD = 25 A

[Graph: Forward voltage of body diode VSD vs Temperature Tvj for ISD=25A at different VGS values (-5V to 18V)]

Switching losses (typical), MOSFET

E = f(ID), RGoff = 4.7 Ω, RGon = 8.2 Ω, VDD = 600 V, VGS = -3/18 V

[Graph: Switching losses Eon and Eoff vs Drain current ID at different temperatures (125°C, 175°C)]

Switching losses (typical), MOSFET

E = f(RG), VDD = 600 V, ID = 25 A, VGS = -3/18 V

[Graph: Switching losses Eon and Eoff vs Gate resistance RG at different temperatures (125°C, 175°C)]

Switching times (typical), MOSFET

t = f(ID), RGoff = 4.7 Ω, RGon = 8.2 Ω, VDD = 600 V, Tvj = 175 °C, VGS = -3/18 V

[Graph: Switching times tdon, tr, tdoff, tf vs Drain current ID]

Switching times (typical), MOSFET

t = f(RG), VDD = 600 V, ID = 25 A, Tvj = 175 °C, VGS = -3/18 V

[Graph: Switching times tdon, tr, tdoff, tf vs Gate resistance RG]

Current slope (typical), MOSFET

di/dt = f(RG), VDD = 600 V, ID = 25 A, VGS = -3/18 V

[Graph: Current slope di/dt vs Gate resistance RG]

Voltage slope (typical), MOSFET

dv/dt = f(RG), VDD = 600 V, ID = 25 A, VGS = -3/18 V

[Graph: Voltage slope dv/dt vs Gate resistance RG]

Reverse bias safe operating area (RBSOA), MOSFET

ID = f(VDS), RGoff = 4.7 Ω, Tvj = 175 °C, VGS = -3/18 V

[Graph: Reverse bias safe operating area ID vs VDS]

Transient thermal impedance, MOSFET

Zth = f(t)

[Graph: Transient thermal impedance ZthJH vs time t]

Temperature characteristic (typical), NTC-Thermistor

R = f(TNTC)

[Graph: Temperature characteristic R vs TNTC]

6 Circuit diagram

Figure 1 shows the circuit diagram of the EasyDUAL module.

[Diagram: Circuit diagram showing two MOSFETs with antiparallel diodes, gate and source connections, and AC/DC connections. Also shows a symbol labeled '9' with terminals X1 and X2.]

7 Package outlines

Figure 2 provides the package outlines and PCB hole patterns for the EasyDUAL module.

[Diagram: Package outlines with dimensions and PCB hole pattern details. Includes specifications for pin-grid, hole pattern tolerance, drill diameters, and copper thickness.]

8 Module label code

The module label code includes information such as code format, encoding, symbol size, standard, and code content including serial number, material number, production order number, and date code.

[Diagram: Example of module label code with Data Matrix and Barcode Code128, showing content breakdown.]

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