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User Manual for IXYS models including: CLA50E1200HB High Efficiency Single Thyristor, CLA50E1200HB, High Efficiency Single Thyristor, Efficiency Single Thyristor, Single Thyristor, Thyristor
CLA50E1200HB Littelfuse - RADIOMAG GmbH
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DocumentDocumentHigh Efficiency Thyristor Single Thyristor Part number CLA50E1200HB CLA50E1200HB VRRM = 1200 V I TAV = 50 A VT = 1.27 V 2 1 3 Backside: anode Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability Applications: Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Package: TO-247 Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202i Downloaded from Arrow.com. CLA50E1200HB Thyristor Ratings Symbol VRSM/DSM VRRM/DRM I R/D VT I TAV I T(RMS) VT0 rT R thJC RthCH Ptot I TSM I²t CJ PGM PGAV (di/dt)cr (dv/dt)cr VGT IGT VGD IGD IL IH t gd tq Definition Conditions max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current VR/D = 1200 V VR/D = 1200 V forward voltage drop IT = 50 A I T = 100 A IT = 50 A I T = 100 A average forward current TC = 125°C RMS forward current 180° sine threshold voltage slope resistance for power loss calculation only TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C min. TVJ = 125 °C TVJ = 150°C TVJ = 150°C thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current value for fusing junction capacitance max. gate power dissipation average gate power dissipation critical rate of rise of current critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current latching current holding current gate controlled delay time turn-off time t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VR = 400 V tP = 30 µs tP = 300 µs f = 1 MHz TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C TC = 150°C TVJ = 150 °C; f = 50 Hz repetitive, IT = 150 A tP = 200 µs; diG /dt = 0.3 A/µs; IG = 0.3 A; V = VDRM non-repet., IT = 50 A V = VDRM TVJ = 150°C R GK = ; method 1 (linear voltage rise) VD = 6 V TVJ = 25°C TVJ = -40°C VD = 6 V TVJ = 25°C TVJ = -40°C VD = VDRM TVJ = 150°C t p = 10 µs TVJ = 25 °C IG = 0.3 A; diG/dt = 0.3 A/µs VD = 6 V RGK = TVJ = 25 °C VD = ½ VDRM TVJ = 25 °C IG = 0.3 A; diG/dt = 0.3 A/µs VR = 100 V; IT = 50A; V = VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs typ. max. Unit 1300 V 1200 V 50 µA 4 mA 1.32 V 1.60 V 1.27 V 1.65 V 50 A 79 A 0.88 V 7.7 m 0.25 K/W 0.3 K/W 500 W 650 A 700 A 555 A 595 A 2.12 kA²s 2.04 kA²s 1.54 kA²s 1.48 kA²s 25 pF 10 W 5W 0.5 W 150 A/µs 500 A/µs 1000 V/µs 1.5 V 1.6 V 50 mA 80 mA 0.2 V 3 mA 125 mA 100 mA 2 µs 200 µs IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202i Downloaded from Arrow.com. Package TO-247 Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Product Marking Logo Part Number Date Code Lot# Location IXYS XXXXXXXXX yywwZ 1234 Conditions per terminal CLA50E1200HB Ratings min. typ. max. Unit 70 A -40 150 °C -40 125 °C -40 150 °C 6 g 0.8 1.2 Nm 20 120 N Part description C = Thyristor (SCR) L = High Efficiency Thyristor A = (up to 1200V) 50 = Current Rating [A] E = Single Thyristor 1200 = Reverse Voltage [V] HB = TO-247AD (3) Ordering Standard Ordering Number CLA50E1200HB Marking on Product CLA50E1200HB Delivery Mode Tube Quantity Code No. 30 503748 Similar Part CLA50E1200TC Package TO-268AA (D3Pak) (2) Voltage class 1200 Equivalent Circuits for Simulation I V0 R0 Thyristor V 0 max R0 max threshold voltage slope resistance * 0.88 5.2 * on die level T VJ = 150°C V m IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20191202i CLA50E1200HB Outlines TO-247 E Q A A2 ØP S D 2x E2 123 L1 L 2x b2 b4 2x e 3x b C A1 Ø P1 D2 D1 4 E1 Sym. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 Inches min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 - 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 - - 0.29 Millimeter min. max. 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 - 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 - 0.51 1.35 13.45 - - 7.39 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20191202i CLA50E1200HB Thyristor 150 120 600 10000 50 Hz, 80% VRRM VR = 0 V 500 90 IT 60 [A] 30 TVJ = 125°C TVJ = 25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 VT [V] Fig. 1 Forward characteristics 400 TVJ = 45°C ITSM TVJ = 125°C 300 [A] 200 I2t 1000 [A2s] TVJ = 45°C TVJ = 125°C 100 0.01 0.1 1 t [s] Fig. 2 Surge overload current ITSM: crest value, t: duration 100 1 2 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time (1-10 s) 10 1000 80 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 6 45 VG 23 11 [V] 100 tgd [µs] 10 TVJ = 125°C 70 60 50 IT(AV)M 40 [A] 30 dc = 1 0.5 0.4 0.33 0.17 0.08 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 0.1 1 10 100 1000 10000 IG [mA] Fig. 4 Gate voltage & gate current lim. typ. 1 10 100 1000 IG [mA] Fig. 5 Gate controlled delay time tgd 20 10 0 0 40 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 100 dc = 80 1 P(AV) 0.5 0.4 60 0.33 [W] 0.17 0.08 40 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 20 0 0 20 40 60 0 50 100 150 IT(AV) [A] Tamb [°C] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0.3 0.2 ZthJC 0.1 [K/W] 0.0 i Rthi (K/W) 1 0.0075 2 0.0170 3 0.0570 4 0.1580 5 0.0105 ti (s) 0.0011 0.0019 0.0115 0.1200 0.5000 0.001 0.01 0.1 1 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191202i Downloaded from Arrow.com.