VISHAY IRFP260 Power MOSFET Owner's Manual

Owner's Manual for VISHAY models including: IRFP260PbF, IRFP260 Power MOSFET, Power MOSFET, MOSFET
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IRFP260
Vishay Siliconix

Power MOSFET

D TO-247AC

G

S
D G

S N-Channel MOSFET

PRODUCT SUMMARY

VDS (V) RDS(on) () Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration

200 VGS = 10 V
230 42 110 Single

0.055

FEATURES · Dynamic dV/dt rating

· Repetitive avalanche rated

Available

· Isolated central mounting hole · Fast switching

Available

· Ease of paralleling

· Simple drive requirements

· Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION
Package Lead (Pb)-free

TO-247AC IRFP260PbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor

VDS

VGS

VGS at 10 V

TC = 25 °C TC = 100 °C

ID

IDM

Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c

TC = 25 °C

EAS IAR EAR PD dV/dt

Operating junction and storage temperature range Soldering recommendations (peak temperature) d for 10 s

TJ, Tstg

Mounting torque

6-32 or M3 screw

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 708 H, Rg = 25 , IAS = 46 A (see fig. 12) c. ISD  46 A, dI/dt  230 A/s, VDD  VDS, TJ  150 °C d. 1.6 mm from case

LIMIT 200 ± 20 46 29 180 2.2 1000 46 28 280 5.0
-55 to +150 300 10 1.1

UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N · m

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IRFP260
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain)

SYMBOL RthJA RthCS RthJC

TYP. -
0.24 -

MAX. 40 0.45

UNIT °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic

VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs

VGS = 0 V, ID = 250 A

Reference to 25 °C, ID = 1 mA

VDS = VGS, ID = 250 A

VGS = ± 20 V

VDS = 200 V, VGS = 0 V

VDS = 160 V, VGS = 0 V, TJ = 125 °C

VGS = 10 V

ID = 28 A b

VDS = 50 V, ID = 28 A b

200

-

-

V

-

0.24

-

V/°C

2.0

-

4.0

V

-

-

± 100 nA

-

-

25

A

-

-

250

-

-

0.055 

24

-

-

S

Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Internal drain inductance
Internal source inductance

Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf LD
LS

VGS = 0 V,

-

VDS = 25 V,

-

f = 1.0 MHz, see fig. 5

-

VGS = 10 V

-

ID = 46 A, VDS = 160 V, see fig. 6 and 13 b

-

-

-

VDD = 100 V, ID = 46 A,

-

Rg = 4.3 , RD = 2.1 , see fig. 10 b

-

-

Between lead,

D

-

6 mm (0.25") from

package and center of

die contact

G

-

S

5200

-

1200

-

pF

310

-

-

230

-

42

nC

-

110

23

-

120

-

ns

100

-

94

-

5.0

-

nH

13

-

Drain-Source Body Diode Characteristics

Continuous source-drain diode current Pulsed diode forward current a

IS

MOSFET symbol

D

showing the

ISM

integral reverse

G

p - n junction diode

S

-

-

46

A

-

-

180

Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Forward turn-on time

VSD

TJ = 25 °C, IS = 46 A, VGS = 0 V b

-

-

1.8

V

trr Qrr

TJ = 25 °C, IF = 46 A, dI/dt = 100 A/s b

-

390

590

ns

4.8

7.2

C

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width  300 s; duty cycle  2 %

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www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFP260
Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 3 - Typical Transfer Characteristics

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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Fig. 7 - Typical Source-Drain Diode Forward Voltage

IRFP260
Vishay Siliconix

VDS VGS RG

RD D.U.T.

10 V
Pulse width  1 µs Duty factor  0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS 90 %

10 % VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

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IRFP260
Vishay Siliconix

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS Vary tp to obtain required IAS
RG
10 V tp

L
D.U.T IAS
0.01 

+ - V DD

Fig. 12a - Unclamped Inductive Test Circuit

VDS

VDS
tp VDD

IAS Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

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10 V

QGS

VG

QG QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator Same type as D.U.T.

12 V

50 k

0.2 µF

0.3 µF

+ D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

IRFP260
Vishay Siliconix

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IRFP260
Vishay Siliconix

D.U.T.
+ -

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

· Low stray inductance

· Ground plane

· Low leakage inductance

current transformer

-

-

+

Rg

· dV/dt controlled by Rg

+

· Driver same type as D.U.T. · ISD controlled by duty factor "D"

- VDD

· D.U.T. - device under test

Driver gate drive

P.W.

Period

D =

P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse

recovery current

Body diode forward current dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt VDD

Re-applied voltage

Body diode forward drop Inductor current

Ripple  5 %

ISD

Note a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91215.

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Package Information
Vishay Siliconix

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

DIM. A A1 A2 b b1 b2 b3 b4 b5 c c1 D

MILLIMETERS

MIN.

NOM.

4.83

5.02

2.29

2.41

1.17

1.27

1.12

1.20

1.12

1.20

1.91

2.00

1.91

2.00

2.87

3.00

2.87

3.00

0.40

0.50

0.40

0.50

20.40

20.55

MAX. 5.21 2.55 1.37 1.33 1.28 2.39 2.34 3.22 3.18 0.60 0.56 20.70

NOTES
6 6, 8
6 4

DIM. D1 D2 E E1 E2 e L L1 Ø P Ø P1 Q S

MIN. 16.46 0.56 15.50 13.46 4.52
14.90 3.96 3.56
5.31

MILLIMETERS NOM. 16.76 0.66 15.70 14.02 4.91
5.46 BSC 15.15 4.06 3.61 7.19 ref. 5.50
5.51 BSC

MAX. 17.06 0.76 15.87 14.16 5.49
15.40 4.16 3.65
5.69

NOTES 5
4 5 3
6 7

Notes
(1) Package reference: JEDEC® TO247, variation AC (2) All dimensions are in mm (3) Slot required, notch may be rounded (4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body (5) Thermal pad contour optional with dimensions D1 and E1 (6) Lead finish uncontrolled in L1 (7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm (8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition

Revision: 31-Oct-2022

1

Document Number: 91360

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VERSION 2: FACILITY CODE = Y

B 3 R/2
Q

4 E
E/2 S

2 x R

(2)

D

12

3

5 L1

C

L

2 x b2

3 x b

2x e

b4

0.10 M C A M

Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain

See view B

Package Information
Vishay Siliconix

A A2 A
4
D

A 7 ØP Ø k M DBM
D2

(Datum B) ØP1
4 D1

4 Thermal pad

A C A1
D DE E CC
View B

Planting

4 E1 0.01 M D B M View A - A
(b1, b3, b5)

Base metal

(c)

c1

(b, b2, b4) (4)
Section C - C, D - D, E - E

DIM. A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1

MILLIMETERS

MIN.

MAX.

4.58

5.31

2.21

2.59

1.17

2.49

0.99

1.40

0.99

1.35

1.53

2.39

1.65

2.37

2.42

3.43

2.59

3.38

0.38

0.86

0.38

0.76

19.71

20.82

13.08

-

NOTES

DIM. D2 E E1 e Ø k L L1 Ø P Ø P1 Q R S

MILLIMETERS

MIN.

MAX.

0.51

1.30

15.29

15.87

13.72

-

5.46 BSC

0.254

14.20

16.25

3.71

4.29

3.51

3.66

-

7.39

5.31

5.69

4.52

5.49

5.51 BSC

NOTES

Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 31-Oct-2022

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VERSION 3: FACILITY CODE = N

B R/2

E N

Q

R

S

D

Package Information
Vishay Siliconix

D2

A

A P1

P

A2

D

c1 D1

K M DBM

L1

C

b2 b

b4 e

0.10 M C A M

L

C A1
Base metal

E1 0.01 M D B M
b1, b3, b5

c

Plating

b, b2, b4

MILLIMETERS

MILLIMETERS

DIM.

MIN.

A

4.65

A1

2.21

A2

1.17

b

0.99

b1

0.99

b2

1.65

b3

1.65

b4

2.59

b5

2.59

c

0.38

c1

0.38

D

19.71

D1

13.08

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

MAX. 5.31 2.59 1.37 1.40 1.35 2.39 2.34 3.43 3.38 0.89 0.84 20.70
-

DIM. D2 E E1 e k L L1 N P P1 Q R S

MIN. 0.51 15.29 13.46
14.20 3.71
3.56 -
5.31 4.52

5.46 BSC 0.254
7.62 BSC
5.51 BSC

MAX. 1.35 15.87
-
16.10 4.29
3.66 7.39 5.69 5.49

Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

Revision: 31-Oct-2022

3

Document Number: 91360

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Disclaimer

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Vishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
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References
