Vishay Intertechnology: Passives & Discrete Semiconductorsvishay.com/doc?91000vishay.com/doc?99912
Instructions for VISHAY models including: IRF540 N-Channel Power MOSFET, IRF540, N-Channel Power MOSFET, Power MOSFET, MOSFET
IRF540PBF Siliconix за ціною від 49.9 грн - РКС Компоненти - РАДІОМАГ
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DocumentDocumentwww.vishay.com IRF540 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 72 11 32 Single 0.077 ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES · Dynamic dV/dt rating · Repetitive avalanche rated Available · 175 °C operating temperature · Fast switching Available · Ease of paralleling · Simple drive requirements Available · Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF540PbF IRF540PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 440 H, Rg = 25 , IAS = 28 A (see fig. 12) c. ISD 28 A, dI/dt 170 A/s, VDD VDS, TJ 175 °C d. 1.6 mm from case LIMIT 100 ± 20 28 20 110 1.0 230 28 15 150 5.5 -55 to +175 300 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N · m S21-0819-Rev. C, 02-Aug-2021 1 Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com IRF540 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain) RthJA RthCS RthJC TYP. - 0.50 - MAX. 62 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg VGS = 0 V, ID = 250 A Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 A VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 150 °C VGS = 10 V ID = 17 A b VDS = 50 V, ID = 17 A b 100 - - V - 0.13 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 A - - 250 - - 0.077 8.7 - - S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1700 - - 560 - pF - 120 - - VGS = 10 V ID = 17 A, VDS = 80 V, see fig. 6 and 13 b - - - 72 - 11 nC - 32 - 11 - VDD = 50 V, ID = 17 A Rg = 9.1 , RD = 2.9 , see fig. 10 b - 44 - ns - 53 - - 43 - f = 1 MHz, open drain 0.5 - 3.6 Internal drain inductance Internal source inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 4.5 - nH - 7.5 - Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current a ISM MOSFET symbol showing the integral reverse p - n junction diode D G S - - 28 A - - 110 Body diode voltage VSD TJ = 25 °C, IS = 28 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time Body diode reverse recovery charge trr Qrr TJ = 25 °C, IF = 17 A, dI/dt = 100 A/s b - 180 360 ns 1.3 2.8 C Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s; duty cycle 2 % S21-0819-Rev. C, 02-Aug-2021 2 Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) IRF540 Vishay Siliconix RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) VGS 102 Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 4.5 V 10-1 91021_01 20 µs Pulse Width TC = 25 °C 100 101 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 °C 3.0 ID = 17 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160180 91021_04 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature ID, Drain Current (A) 102 Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 101 Bottom 4.5 V 4.5 V 10-1 91021_02 20 µs Pulse Width TC = 175 °C 100 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 175 °C 3000 2400 1800 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss Capacitance (pF) 1200 600 0 100 91021_05 Coss Crss 101 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (V) 102 25 °C 175 °C 20 ID = 17 A 16 12 VDS = 80 V VDS = 50 V VDS = 20 V ID, Drain Current (A) 101 8 4 91021_03 20 µs Pulse Width VDS = 50 V 5 6 7 8 9 10 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 4 0 0 91021_06 For test circuit see figure 13 10 20 30 40 50 60 70 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S21-0819-Rev. C, 02-Aug-2021 3 Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com IRF540 Vishay Siliconix ISD, Reverse Drain Current (A) 150 °C 101 25 °C 100 10-1 0.4 91021_07 VGS = 0 V 0.8 1.2 1.6 VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) 103 Operation in this area limited 5 by RDS(on) 2 102 10 µs 5 100 µs 2 1 ms 10 5 2 1 0.1 2 TC = 25 °C TJ = 175 °C Single Pulse 5 1 2 5 10 2 10 ms 5 102 2 5 103 2 5 104 91021_08 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 30 25 ID, Drain Current (A) 20 15 10 5 0 25 91021_09 50 75 100 125 150 175 TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature VDS VGS RG RD D.U.T. 10 V Pulse width 1 µs Duty factor 0.1 % +- VDD Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms S21-0819-Rev. C, 02-Aug-2021 4 Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com 10 IRF540 Vishay Siliconix Thermal Response (ZthJC) 1 0 - 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-2 10-5 91021_11 Single Pulse (Thermal Response) 10-4 10-3 10-2 0.1 t1, Rectangular Pulse Duration (s) PDM t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 1 10 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS Vary tp to obtain required IAS RG 10 V tp L D.U.T IAS 0.01 + - VDD Fig. 12a - Unclamped Inductive Test Circuit VDS VDS tp VDD IAS Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 600 ID Top 11 A 500 20 A Bottom 28 A 400 300 200 100 0 VDD = 25 V 25 50 75 100 125 150 175 91021_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current S21-0819-Rev. C, 02-Aug-2021 5 Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com IRF540 Vishay Siliconix 10 V QGS VG QG QGD Charge Fig. 13a - Basic Gate Charge Waveform D.U.T. + 2 - Current regulator Same type as D.U.T. 12 V 50 k 0.2 µF 0.3 µF + D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Peak Diode Recovery dv/dt Test Circuit + Circuit layout considerations · Low stray inductance 3 · Ground plane · Low leakage inductance current transformer - - 4+ 1 Rg · dv/dt controlled by Rg · Driver same type as D.U.T. · ISD controlled by duty factor "D" · D.U.T. - device under test + - VDD 1 Driver gate drive P.W. Period D = P.W. Period VGS = 10 V a 2 D.U.T. ISD waveform Reverse recovery Body diode forward current current di/dt 3 D.U.T. VDS waveform Diode recovery dv/dt V DD Re-applied voltage 4 Inductor current Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91021. S21-0819-Rev. C, 02-Aug-2021 6 Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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