User Guide for VISHAY models including: TCLT1000 Optocoupler Phototransistor Output SOP-4L Long Mini Flat Package, TCLT1000, Optocoupler Phototransistor Output SOP 4L Long Mini Flat Package, Phototransistor Output SOP 4L Long Mini Flat Package, Output SOP 4L Long Mini Flat Package, 4L Long Mini Flat Package, Mini Flat Package, Flat Package, Package

TCLT1008 - РКС Компоненти - РАДІОМАГ

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TCLT100. Series
Vishay Semiconductors

Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package

CE 43

17295-5

12

A

C

DESCRIPTION The TCLT100. series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead SOP4L package.
APPLICATIONS · Switchmode power supplies · Computer peripheral interface · Microprocessor system interface

FEATURES
· SMD low profile 4 lead package · VIORM = 1050 V · CTR flexibility available see order information · Special construction · Extra low coupling capacitance · DC input with transistor output · Creepage distance > 8 mm · Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
AGENCY APPROVALS
· UL1577, file no. E76222 · CSA (cUL) 22.2 bulletin 5A recognized file no. E-76222 · BSI: BS EN 41003, BS EN 60065 (BS 415), BS EN 60950
(BS 7002), certificate number 7081 and 7402 · DIN EN 60747-5-5 (VDE 0884) · FIMKO: EN 60950 · CQC
Note · See the safety standard approval list "Agency Table" for more
detailed information.

ORDERING INFORMATION

T

C

L

T

1

0

0

#

SOP-4L

PART NUMBER

10.2 mm

AGENCY CERTIFIED/PACKAGE

5 mA

10 mA

CTR (%)

5 mA

UL, cUL, VDE, BSI, FIMKO 50 to 600 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400

SOP-4L

TCLT1000 TCLT1002 TCLT1003 TCLT1004 TCLT1005 TCLT1006 TCLT1007 TCLT1008 TCLT1009

Note · Available only on tape and reel.

Rev. 2.9, 01-Dec-15

1

Document Number: 83515

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

TCLT100. Series
Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT

tp  10 s

VR

6

V

IF

60

mA

IFSM

1.5

A

Pdiss

100

mW

Tj

125

°C

Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER

VCEO

70

V

VECO

7

V

IC

50

mA

tp/T = 0.5, tp  10 ms

ICM

100

mA

Pdiss

150

mW

Tj

125

°C

Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature

Ptot

250

mW

Tamb

-55 to +100

°C

Tstg

-55 to +125

°C

Tsld

260

°C

Note

· Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage Junction capacitance OUTPUT

IF = 50 mA

VF

VR = 0 V, f = 1 MHz

Cj

-

1.25

1.6

V

-

50

-

pF

Collector emitter voltage

IC = 1 mA

VCEO

70

Emitter collector voltage

IE = 100 A

VECO

7

Collector emitter cut-off current

VCE = 20 V, IF = 0 A

ICEO

-

COUPLER

-

-

V

-

-

V

10

100

nA

Collector emitter saturation voltage IF = 10 mA, IC = 1 mA

VCEsat

-

Cut-off frequency

VCE = 5 V, IF = 10 mA, RL = 100 

fc

-

Coupling capacitance

f = 1 MHz

Ck

-

-

0.3

V

110

-

kHz

0.3

-

pF

Note
· Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Rev. 2.9, 01-Dec-15

2

Document Number: 83515

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

TCLT100. Series
Vishay Semiconductors

CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL MIN.

VCE = 5 V, IF = 5 mA

TCLT1000 TCLT1002

CTR

50

CTR

63

VCE = 5 V, IF = 10 mA

TCLT1003 TCLT1004

CTR

100

CTR

160

TCLT1002

CTR

22

IC/IF

VCE = 5 V, IF = 1 mA

TCLT1003 TCLT1004

CTR

34

CTR

56

TCLT1005

CTR

50

TCLT1006

CTR

100

VCE = 5 V, IF = 5 mA

TCLT1007 TCLT1008

CTR

80

CTR

130

TCLT1009

CTR

200

TYP. 45 70
100 -

MAX. 600 125 200 320
150 300 160 260 400

UNIT % % % % % % % % % % % %

SAFETY AND INSULATION RATINGS

PARAMETER

CONDITION

SYMBOL

VALUE

UNIT

Partial discharge test voltage - routine test Partial discharge test voltage lot test (sample test) Isolation test voltage (RMS)
Insulation resistance

100 %, ttest = 1 s tTr = 60 s, ttest = 10 s,
(see figure 2)
VIO = 500 V VIO = 500 V, Tamb = 100 °C VIO = 500 V, Tamb = 150 °C
(construction test only)

Vpd VIOTM Vpd VISO
RIO RIO
RIO

2 8 1.68 5000 1012 1011
109

kV kVpeak kVpeak VRMS
 


Forward current Power dissipation Rated impulse voltage Safety temperature Comparative tracking index Clearance distance

Isi

130

mA

Pso

265

mW

VIOTM

8

kV

Tsi

150

°C

CTI

175

8.0

mm

Creepage distance Insulation distance (internal)

8.0

mm

0.40

mm

Note
· According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

300

Phototransistor

250

Pso (mW)

200

150

100 50 0 0
94 9182-2

IR-diode Isi (mA)
25 50 75 100 125 150 Tsi - Safety Temperature (°C)

Fig. 1 - Derating Diagram

VIOTM
Vpd VIOWM VIORM

t1, t2 = 1 s to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s

0

13930

t1

tTr = 60 s

t3 ttest t4 t2 t stres
t

Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5

Rev. 2.9, 01-Dec-15

3

Document Number: 83515

For technical questions, contact: optocoupleranswers@vishay.com

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www.vishay.com

TCLT100. Series
Vishay Semiconductors

SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

Delay time

VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3)

td

-

Rise time

VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3)

tr

-

Fall time

VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3)

tf

-

Storage time

VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3)

ts

-

Turn-on time

VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3)

ton

-

Turn-off time

VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3)

toff

-

Turn-on time

VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 4)

ton

-

Turn-off time

VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 4)

toff

-

TYP. 3 3 4.7 0.3 6 5 9 10

MAX. -

UNIT s s s s s s s s

IF IF 0
R G = 50  tp
= 0.01 T tp = 50 µs

95 10804

50 

+ 5 V
IC = 2 mA; adjusted through input amplitude

100 

Channel I Channel II

Oscilloscope
R L = 1 M C L = 20 pF

Fig. 3 - Test Circuit, Non-Saturated Operation

IF

0 IC

tp

t

100 %

90 %

10 % 0
tp td tr ton (= td + tr)

tr td
t on
Pulse duration Delay time Rise time Turn-on time

ts

tf

t off

ts tf toff (= ts + tf)

Fig. 5 - Switching Times

t
Storage time Fall time Turn-off time
96 11698

IF IF = 10 mA 0

+ 5 V IC

RG = 50  tp
= 0.01 T t p = 50 µs

95 10843

50 

1 k

Channel I Channel II

Oscilloscope
RL  1 M CL  20 pF

Fig. 4 - Test Circuit, Saturated Operation

Rev. 2.9, 01-Dec-15

4

Document Number: 83515

For technical questions, contact: optocoupleranswers@vishay.com

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www.vishay.com TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

TCLT100. Series
Vishay Semiconductors

Ptot - Total Power Dissipation (mW)

300
Coupled device 250

200 Phototransistor
150
IR-diode 100

50

0

0

40

80

120

96 11700 Tamb - Ambient Temperature (°C)

Fig. 6 - Total Power Dissipation vs. Ambient Temperature

NCTR - Normalized CTR (sat)

1.2
1.0
0.8
0.6
0.4
0.2 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C
0 -60 -40 -20 0 20 40 60 80 100 120
Tamb - Ambient Temperature (°C)
Fig. 9 - Normalized Current Transfer Ratio (saturated) vs. Ambient Temperature

IF - Forward Current (mA)

100 Tamb = 110 °C Tamb = 75 °C Tamb = 25 °C
10 Tamb = 0 °C Tamb = - 55 °C
1
0.1 0.6 0.8 1.0 1.2 1.4 1.6
VF - Forward Voltage (V)
Fig. 7 - Forward Current vs. Forward Voltage

NCTR - Normalized CTR (NS)

1.4

Tamb = 0 °C

1.2

Tamb = -55 °C

1.0 Tamb = 25 °C

0.8

0.6 0.4 0.2
0 0.1

Tamb = 75 °C Tamb = 100 °C
Normalized to: IF = 5 mA, VCE = 5 V

1

10

100

IF - Forward Current (mA)

Fig. 10 - Normalized Current Transfer Ratio (non-saturated) vs. Forward Current

NCTR - Normalized CTR (non-saturated)

1.2 IF = 5 mA
1.0
0.8
0.6
0.4
0.2 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C
0 -60 -40 -20 0 20 40 60 80 100 120
Tamb - Ambient Temperature (°C)
Fig. 8 - Normalized Current Transfer Ratio (non-saturated) vs. Ambient Temperature

NCTR - Normalized CTR (sat)

1.2

VCE = 0.4 V

1.0

Normalized to: IF = 5 mA,

VCE = 5 V,

0.8 Tamb = 25 °C

0.6

Tamb = 0 °C Tamb = -55 °C

0.4

Tamb = 25 °C

0.2

Tamb = 75 °C

Tamb = 100 °C

0

0.1

1

10

100

IF - Forward Current (mA)

Fig. 11 - Normalized Current Transfer Ratio (saturated) vs. Forward Current

Rev. 2.9, 01-Dec-15

5

Document Number: 83515

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ICE0 - Leakage Current (nA)

10 000 1000 100

IF = 0 mA

VCE = 40 V

10

1

VCE = 24 V

0.1 0.01

VCE = 12 V

0.001 -60 -40 -20 0 20 40 60 80 100 120
Tamb - Ambient Temperature (°C)

Fig. 12 - Collector Dark Current vs. Ambient Temperature

IC - Collector Current (mA)

100 VCE = 5 V
10

1

0.1

0.01

0.1

1

10

100

95 11027

IF - Forward Current (mA)

Fig. 13 - Collector Current vs. Forward Current

IC - Collector Current (mA)

100 20 mA

IF = 50 mA

10

10 mA

5 mA

1

2 mA

1 mA

0.1

0.1

1

10

100

95 10985 VCE - Collector Emitter Voltage (V)

Fig. 14 - Collector Current vs. Collector Emitter Voltage

TCLT100. Series
Vishay Semiconductors

CEsat V - Collector Emitter Saturation Voltage (V)

1.0
0.8 CTR = 50 % used
0.6

20 % used

0.4
0.2
0 1
95 11028

10 % used

10

100

IC - Collector Current (mA)

Fig. 15 - Collector Emitter Saturation Voltage vs. Collector Current

CTR - Current Transfer Ratio (%)

1000 VCE = 5 V
100

10

1

0.1

1

10

100

95 11029

IF - Forward Current (mA)

Fig. 16 - Current Transfer Ratio vs. Forward Current

ton/toff - Turn-On/Turn-Off Time (µs)

10
8 ton
6 toff
4

Non-saturated
operation VS = 5 V RL = 100 

2

0

0

2

4

6

8

95 11030

IC - Collector Current (mA)

Fig. 17 - Turn-on/off Time vs. Collector Current

Rev. 2.9, 01-Dec-15

6

Document Number: 83515

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ton/toff - Turn-On/Turn-Off Time (µs)

50

Saturated operation

40

VS = 5 V

RL = 1 k

30
toff 20

10
0 0
95 11031

ton

5

10

15

20

IF - Forward Current (mA)

Fig. 18 - Turn-on/off Time vs. Forward Current

PACKAGE DIMENSIONS (in millimeters)
4.10 max. 3.80

2.30 max. 2.00

0.45 ± 0.1

2.54 nom.

4

3

0.10 Seating plane

TCLT100. Series
Vishay Semiconductors

+ 0.30
10.20 - 0.40 7.50 ± 0.20

+ 0.10
0.20 - 0.05

Possible footprint

+ 0.30
0.70 - 0.40

2.54 0.90

8.20 10.80

22533

1

2

Pin no. 1 identi cation

PACKAGE MARKING (example)

TCLT1003 V YWW 68

technical drawings according to DIN speci cations

Rev. 2.9, 01-Dec-15

7

Document Number: 83515

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com TAPE AND REEL DIMENSIONS (in millimeters)

ESD sticker

330 (13")

Tape slot in core

Regular, special or bar code label
17999
Fig. 19 - Reel Dimensions (3000 units per reel)

SOLDER PROFILE

Temperature (°C)

300

250 255 °C 240 °C
217 °C 200

max. 260 °C 245 °C

max. 30 s

150

max. 120 s

max. 100 s

100 max. ramp down 6 °C/s

50 max. ramp up 3 °C/s

0

0

50 100 150 200 250 300

19841

Time (s)

Fig. 21 - Lead (Pb)-free Reflow Solder Profile according to J-STD-020

TCLT100. Series
Vishay Semiconductors

2

4

2.7 0.3

Ø 1.55

1.75

7.5

10.6

16

5°

4.25

8

Ø 1.6

Direction of pulling out

technical drawings according to DIN specification

Fig. 20 - Tape Dimensions

2.3 22662

HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2 Floor life: unlimited Conditions: Tamb < 30 °C, RH < 85 % Moisture sensitivity level 1, according to J-STD-020

Rev. 2.9, 01-Dec-15

8

Document Number: 83515

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Disclaimer

Legal Disclaimer Notice
Vishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2023

1

Document Number: 91000



References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• vishay.com/doc?91000
• vishay.com/doc?99912