Vishay Intertechnology: Passives & Discrete Semiconductors
Instructions for VISHAY models including: IRF9640 Channel MOSFET Transistor, IRF9640, Channel MOSFET Transistor, MOSFET Transistor, Transistor
IRF9640PBF за ціною від 25.9 грн - РКС Компоненти - РАДІОМАГ
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DocumentDocumentwww.vishay.com IRF9640 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) -200 RDS(on) () VGS = -10 V 0.50 Qg max. (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single FEATURES · Dynamic dV/dt rating · Repetitive avalanche rated Available · P-channel · Fast switching Available · Ease of paralleling · Simple drive requirements · Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRF9640PbF IRF9640PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 , IAS = -11 A (see fig. 12) c. ISD -11 A, dI/dt 150 A/s, VDD VDS, TJ 150 °C d. 1.6 mm from case LIMIT -200 ± 20 -11 -6.8 -44 1.0 700 -11 13 125 -5.0 -55 to +150 300 10 1.1 UNIT V V A W/°C mJ A mJ W V/ns °C lbf · in N · m S21-0867-Rev. D, 16-Aug-2021 1 Document Number: 91086 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com IRF9640 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain) RthJA RthCS RthJC TYP. - 0.50 - MAX. 62 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, ID = -250 A Reference to 25 °C, ID = -1 mA VDS = VGS, ID = -250 A VGS = ± 20 V VDS = -200 V, VGS = 0 V VDS = -160 V, VGS = 0 V, TJ = 125 °C VGS = -10 V ID = -6.6 A b VDS = -50 V, ID = -6.6 A b -200 - -2.0 4.1 - - V -0.2 - V/°C - -4.0 V - ± 100 nA - -100 A - -500 - 0.50 - - S VGS = 0 V, - VDS = -25 V, - f = 1.0 MHz, see fig. 5 - - VGS = -10 V ID = -11 A, VDS = -160 V, see fig. 6 and 13 b - - - VDD = -100 V, ID = -11 A - Rg = 9.1 , RD = 8.6 , see fig. 10 b - - 1200 - 370 - pF 81 - - 44 - 7.1 nC - 27 14 - 43 - ns 39 - 38 - Gate input resistance Internal drain inductance LD Between lead, 6 mm (0.25") from D package and center of G LS die contact S - 4.5 - nH - 7.5 - Internal source inductance Rg Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current a ISM f = 1 MHz, open drain MOSFET symbol showing the integral reverse p -n junction diode D G S 0.3 - 1.7 - - -11 A - - -44 Body diode voltage VSD TJ = 25 °C, IS = -11 A, VGS = 0 V b - - -5 V Body diode reverse recovery time Body diode reverse recovery charge trr Qrr TJ = 25 °C, IF = -11 A, dI/dt = 100 A/s b - 250 300 ns 2.9 3.6 C Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s; duty cycle 2 % S21-0867-Rev. D, 16-Aug-2021 2 Document Number: 91086 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) IRF9640 Vishay Siliconix RDS(on), Drain-to-Source On Resistance (Normalized) - ID, Drain Current (A) VGS Top - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V 101 Bottom - 4.5 V 100 100 91086_01 - 4.5 V 20 µs Pulse Width TC = 25 °C 101 - VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 °C - ID, Drain Current (A) VGS Top - 15 V - 10 V - 8.0 V - 7.0 V 101 - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V - 4.5 V 100 100 91086_02 20 µs Pulse Width TC = 150 °C 101 - VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C 101 25 °C 150 °C - ID, Drain Current (A) 100 4 91086_03 20 µs Pulse Width VDS = - 50 V 5 6 7 8 9 10 - VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 3.0 ID = - 11 A VGS = - 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 91086_04 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature 2400 2000 1600 1200 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss Capacitance (pF) 800 400 0 100 91086_05 Coss Crss 101 - VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage - VGS, Gate-to-Source Voltage (V) 20 ID = - 11 A 16 VDS = - 160 V VDS = - 100 V 12 VDS = - 40 V 8 4 0 0 91086_06 For test circuit see figure 13 10 20 30 40 50 60 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage S21-0867-Rev. D, 16-Aug-2021 3 Document Number: 91086 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com - ISD, Reverse Drain Current (A) 101 150 °C 100 25 °C 10-1 0.0 91086_07 VGS = 0 V 1.0 2.0 3.0 4.0 5.0 - VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage 102 Operation in this area limited 5 by RDS(on) 10 µs - ID, Drain Current (A) 2 100 µs 10 5 1 ms 2 1 1 91086_08 TC = 25 °C TJ = 150 °C Single Pulse 10 ms 2 5 10 2 5 102 2 5 103 - VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 10 IRF9640 Vishay Siliconix 12 10 8 - ID, Drain Current (A) 6 4 2 0 25 91086_09 50 75 100 125 150 TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature VDS VGS RG RD D.U.T. - 10 V Pulse width 1 µs Duty factor 0.1 % +VDD Fig. 10a - Switching Time Test Circuit VDS 10 % td(on) tr td(off) tf 90 % VGS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 1 D = 0.50 PDM 0.20 0.1 0.10 0.05 0.02 0.01 10-2 10-5 Single Pulse (Thermal Response) 10-4 10-3 10-2 t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 0.1 1 10 91086_11 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S21-0867-Rev. D, 16-Aug-2021 4 Document Number: 91086 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com IRF9640 Vishay Siliconix VDS L RG D.U.T - 10 V IAS tp 0.01 + VDS Fig. 12a - Unclamped Inductive Test Circuit 1600 1200 IAS VDS VDD tp V(BR)DSS Fig. 12b - Unclamped Inductive Waveforms ID Top - 4.9 A - 7.0 A Bottom - 11 A EAS, Single Pulse Energy (mJ) 800 400 0 VDD = - 50 V 25 50 75 100 125 150 91086_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. - 10 V QGS VG QG QGD Charge Fig. 13a - Basic Gate Charge Waveform 12 V 50 k 0.2 µF 0.3 µF D.U.T. + VDS VGS - 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit S21-0867-Rev. D, 16-Aug-2021 5 Document Number: 91086 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com D.U.T. + - Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations · Low stray inductance · Ground plane · Low leakage inductance current transformer - IRF9640 Vishay Siliconix + - Rg · dV/dt controlled by Rg + · ISD controlled by duty factor "D" · D.U.T. - device under test - VDD Note · Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery Body diode forward current current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Body diode forward drop Inductor current Ripple 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91086. S21-0867-Rev. D, 16-Aug-2021 6 Document Number: 91086 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Downloaded from Arrow.com. www.vishay.com Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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