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Owner's Manual for IXYS models including: CLA100E1200HB High Efficiency Thyristor, CLA100E1200HB, High Efficiency Thyristor, Efficiency Thyristor
CLA100E1200HB IXYS - РКС Компоненти - РАДІОМАГ
CLA100E1200HB IXYS - RADIOMAG GmbH
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DocumentDocumentHigh Efficiency Thyristor Single Thyristor Part number CLA100E1200HB CLA100E1200HB VRRM = 1200 V I TAV = 100 A VT = 1.34 V 2 1 3 Backside: anode Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability Applications: Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Package: TO-247 Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210601d Downloaded from Arrow.com. CLA100E1200HB Thyristor Ratings Symbol VRSM/DSM VRRM/DRM I R/D VT I TAV I T(RMS) VT0 rT R thJC RthCH Ptot I TSM I²t CJ PGM PGAV (di/dt)cr (dv/dt)cr VGT IGT VGD IGD IL IH t gd tq Definition Conditions max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current VR/D = 1200 V VR/D = 1200 V forward voltage drop IT = 100 A I T = 200 A IT = 100 A I T = 200 A average forward current TC = 105°C RMS forward current 180° sine threshold voltage slope resistance for power loss calculation only TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C min. TVJ = 125 °C TVJ = 150°C TVJ = 150°C thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current value for fusing junction capacitance max. gate power dissipation average gate power dissipation critical rate of rise of current critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current latching current holding current gate controlled delay time turn-off time t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VR = 400 V tP = 30 µs tP = 300 µs f = 1 MHz TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C TC = 150°C TVJ = 150 °C; f = 50 Hz repetitive, IT = 300 A tP = 200 µs; diG /dt =0.45 A/µs; IG = 0.45 A; V = VDRM non-repet., IT = 100 A V = VDRM TVJ = 150°C R GK = ; method 1 (linear voltage rise) VD = 6 V TVJ = 25°C TVJ = -40°C VD = 6 V TVJ = 25°C TVJ = -40°C VD = VDRM TVJ = 150°C t p = 10 µs TVJ = 25 °C IG = 0.45 A; diG/dt = 0.45 A/µs VD = 6 V RGK = TVJ = 25 °C VD = ½ VDRM TVJ = 25 °C IG = 0.5 A; diG/dt = 0.5 A/µs VR = 100 V; IT = 100A; V = VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs typ. max. Unit 1300 V 1200 V 10 µA 5 mA 1.37 V 1.78 V 1.34 V 1.85 V 100 A 160 A 0.82 V 5.2 m 0.2 K/W 0.15 K/W 625 W 1.10 kA 1.19 kA 935 A 1.01 kA 6.05 kA²s 5.89 kA²s 4.37 kA²s 4.25 kA²s 43 pF 10 W 1W 0.5 W 150 A/µs 500 A/µs 1000 V/µs 1.5 V 1.6 V 40 mA 80 mA 0.2 V 5 mA 150 mA 100 mA 2 µs 150 µs IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210601d Downloaded from Arrow.com. Package TO-247 Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Product Marking Logo Part Number Date Code Lot# Location IXYS XXXXXXXXX yywwZ 1234 Conditions per terminal CLA100E1200HB Ratings min. typ. max. Unit 70 A -40 150 °C -40 125 °C -40 150 °C 6 g 0.8 1.2 Nm 20 120 N Part description C = Thyristor (SCR) L = High Efficiency Thyristor A = (up to 1200V) 100 = Current Rating [A] E = Single Thyristor 1200 = Reverse Voltage [V] HB = TO-247AD (3) Ordering Standard Ordering Number CLA100E1200HB Marking on Product CLA100E1200HB Delivery Mode Tube Quantity Code No. 30 516408 Similar Part CLA100E1200KB Package TO-264 (3) Voltage class 1200 Equivalent Circuits for Simulation I V0 R0 Thyristor V 0 max R0 max threshold voltage slope resistance * 0.82 2.7 * on die level T VJ = 150°C V m IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20210601d CLA100E1200HB Outlines TO-247 E Q A A2 ØP S D 2x E2 123 L1 L 2x b2 b4 2x e 3x b C A1 Ø P1 D2 D1 4 E1 Sym. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 Inches min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 - 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 - - 0.29 Millimeter min. max. 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 - 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 - 0.51 1.35 13.45 - - 7.39 2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20210601d CLA100E1200HB Thyristor 150 1000 900 50 Hz, 80% VRRM 10000 VR = 0 V 100 IT [A] 50 125°C 150°C TVJ = 25°C 0 0.5 1.0 1.5 VT [V] Fig. 1 Forward characteristics 800 ITSM 700 [A] 600 500 TVJ = 45°C TVJ = 125°C 400 0.01 0.1 1 t [s] Fig. 2 Surge overload current I2t [A2s] TVJ = 45°C TVJ = 125°C 1000 1 2 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time (1-10 ms) 10 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 3 VG 2 1 1 [V] 1000 6 5 4 100 tgd [µs] 10 typ. Limit TVJ = 125°C 120 100 80 IT(AV)M 60 [A] 40 dc = 1 0.5 0.4 0.33 0.17 0.08 0.1 1 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 10 100 1000 10000 IG [mA] Fig. 4 Gate trigger characteristics 1 10 100 1000 IG [mA] Fig. 5 Gate controlled delay time 20 0 0 25 50 75 100 125 150 175 TC [°C] Fig. 6 Max. forward current at case temperature 200 160 P(AV) 120 [W] dc = 1 0.5 0.4 0.33 0.17 0.08 80 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 40 0 0 25 50 75 100 125 0 50 100 150 IT(AV) [A] Tamb [°C] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0.24 0.20 0.16 ZthJC 0.12 [K/W] 0.08 0.04 0.00 1 i Rthi (K/W) 1 0.032 2 0.018 3 0.021 4 0.034 5 0.095 10 100 1000 t [ms] Fig. 8 Transient thermal impedance ti (s) 0.0110 0.0001 0.0200 0.3500 0.1400 10000 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210601d Downloaded from Arrow.com.