IXYS MDNA3High Voltage Standard Rectifier Module
Part number
MDNA360UB2200PTED
| 3~ Rectifier | Brake Chopper |
| VRRM = 2200 V | VCES = 1700 V |
| IDAV = 360 A | IC25 = 200 A |
| IFSM = 1900 A | VCE(sat) = 2,1 V |
Features / Advantages:
Brake with Infineon IGBT³
Applications
3~ Rectifier with brake unit for drive inverters
Package: E2-Pack
- Isolation Voltage: 4 3 0 0 V~
- Industry standard outline
- RoHS compliant
- PressFit-Pins for PCB mounting
- Height: 17 mm
- Base plate: Copper internally DCB isolated
- Advanced power cycling
- Phase Change Material available
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics
| Rectifier | Ratings | ||||||
| Symbol | Definition Conditions | min. | typ. | max. | Unit | ||
| VRSM | max. non-repetitive reverse blocking voltage | TVJ = 25°C | 2300 | V | |||
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25°C | 2200 | V | |||
| IR | reverse current VR = 2200 V | TVJ = 25°C | 100 | µA | |||
| VR = 2200 V | TVJ = 150°C | 3 | mA | ||||
| VF forward voltage drop | IF = 120 A TVJ = 25°C | 1,25 | V | ||||
| IF = 360 A | 1,80 | V | |||||
| IF = 120 A TVJ = 125°C | 1,23 | V | |||||
| IF = 360 A | 1,98 | V | |||||
| I DAV | bridge output current TC = 85°C
rectangular d = ⅓ |
TVJ = 150°C | 360 | A | |||
| VF0
rF |
threshold voltage
for power loss calculation only slope resistance |
TVJ = 150°C | 0,82 | V | |||
| 3,4 | mΩ | ||||||
| RthJC | thermal resistance junction to case | 0,25 | K/W | ||||
| RthCH | thermal resistance case to heatsink | 0,1 | K/W | ||||
| Ptot | total power dissipation | TC = 25°C | 500 | W | |||
| IFSM max. forward surge current | t = 10 ms; (50 Hz), sine TVJ = 45°C | 1,90 | kA | ||||
| t = 8,3 ms; (60 Hz), sine VR = 0 V | 2,05 | kA | |||||
| t = 10 ms; (50 Hz), sine TVJ = 150°C | 1,62 | kA | |||||
| t = 8,3 ms; (60 Hz), sine VR = 0 V | 1,75 | kA | |||||
| I²t value for fusing | t = 10 ms; (50 Hz), sine TVJ = 45°C | 18,1 | kA²s | ||||
| t = 8,3 ms; (60 Hz), sine VR = 0 V | 17,5 | kA²s | |||||
| t = 10 ms; (50 Hz), sine TVJ = 150°C | 13,0 | kA²s | |||||
| t = 8,3 ms; (60 Hz), sine VR = 0 V | 12,7 | kA²s | |||||
| CJ | junction capacitance VR = 400 V; f = 1 MHz | TVJ = 25°C | 73 | pF | |||
| Brake IGBT + Diode | Ratings | |||||||
| Symbol | Definition | Conditions | min. | typ. | max. | Unit | ||
| VCES | collector emitter voltage | TVJ | = 25°C | 1700 | V | |||
| VGES | max. DC gate voltage | ±20 | V | |||||
| VGEM | max. transient gate emitter voltage | ±30 | V | |||||
| IC25 | collector current | TC | = 25°C | 200 | A | |||
| IC100 | TC | = 100°C | 135 | A | ||||
| Ptot | total power dissipation | TC | = 25°C | 935 | W | |||
| VCE(sat) | collector emitter saturation voltage | IC = 150 A; VGE = 15 V | TVJ | = 25°C | 2,1 | 2,8 | V | |
| TVJ | = 125°C | 3,2 | V | |||||
| VGE(th) | gate emitter threshold voltage | IC = 4 mA; VGE = VCE | TVJ | = 25°C | 5,5 | 6,0 | 6,5 | V |
| ICES | collector emitter leakage current | VCE = VCES; VGE = 0 V | TVJ
TVJ |
= 25°C
= 125°C |
2,3 |
0,12 | mA
mA |
|
| IGES | gate emitter leakage current | VGE = ±20 V | 500 | nA | ||||
| QG(on) | total gate charge | VCE = 900 V; VGE = 15 V; IC = 150 A | 310 | nC | ||||
| td(on)
tr td(off) t f Eon Eoff |
turn-on delay time current rise time turn-off delay time current fall time
turn-on energy per pulse turn-off energy per pulse |
inductive load VCE 900 V; IC = 150 A VGE = ±15 V; RG = 10 Ω |
TVJ |
= 125°C |
120 | ns | ||
| 80 | ns | |||||||
| 400 | ns | |||||||
| 150 | ns | |||||||
| 45 | mJ | |||||||
| 50 | mJ | |||||||
| RBSOA
I CM |
reverse bias safe operating area | VGE = ±15 V; RG = 10 Ω
VCEK = 1700 V |
TVJ | = 125°C |
280 |
A |
||
| SCSOA | short circuit safe operating area | VCEK = 1700 V | ||||||
| tSC | short circuit duration | VCE = 1300 V; VGE = ±15 | TVJ | = 125°C | 10 | µs | ||
| ISC | short circuit current | RG = 10 Ω; non-repetitive | 400 | A | ||||
| RthJC | thermal resistance junction to case | 0,16 | K/W | |||||
| RthCH | thermal resistance case to heatsink | 0,25 | K/W | |||||
|
1700 |
V |
|||||||
| Brake Diode | ||||||||
| VRRM | max. repetitive reverse voltage | TVJ | = 25°C | |||||
| IF25 | forward current | TC | = 25°C | 145 | A | |||
| IF100 | TC | = 100°C | 90 | A | ||||
| VF | forward voltage | IF = 100 A | TVJ
TVJ |
= 25°C
= 125°C |
2,00 |
2,20 | V
V |
|
| IR | reverse current | VR = VRRM | TVJ
TVJ |
= 25°C
= 125°C |
tbd
tbd |
mA
mA |
||
| Qrr | reverse recovery charge | VR = 900 V | 30 | µC | ||||
| IRM | max. reverse recovery current | -diF /dt = 2500A/µs | TVJ | = 125°C | 60 | A | ||
| trr | reverse recovery time | IF = 100 A; VGE = 0 V | 200 | ns | ||||
| Erec | reverse recovery energy | 11 | mJ | |||||
| RthJC | thermal resistance junction to case | 0,39 | K/W | |||||
| RthCH | thermal resistance case to heatsink | 0,62 | K/W | |||||
| Package E2-Pack | Ratings | |||
| Symbol Definition Conditions | min. | typ. | max. | Unit |
| I RMS RMS current per terminal | 30 | A | ||
| TVJ virtual junction temperature | -40 | 150 | °C | |
| Top operation temperature | -40 | 125 | °C | |
| Tstg storage temperature | -40 | 125 | °C | |
| Weight | 176 | g | ||
| MD mounting torque | 3 | 6 | Nm | |
| dSpp/App terminal to terminal
creepage distance on surface | striking distance through air dSpb/Apb terminal to backside |
6,0
12,0 |
mm
mm |
||
| V isolation voltage t = 1 second
ISOL 50/60 Hz, RMS; IISOL ≤ 1 mA t = 1 minute |
4300
3600 |
V
V |
||
Part description
| Ordering | Ordering Number | Marking on Product | Delivery Mode | Quantity | Code No. |
| Standard | MDNA360UB2200PTED | MDNA360UB2200PTED | Blister | 28 | 515682 |
| Alternative | MDNA360UB2200PTED-PC | MDNA360UB2200PTED | Blister | 28 | 514541 |
Temperature Sensor NTC
| Symbol | Definition | Conditions | min. | typ. | max. | Unit |
| R25 B25/50 | resistance
temperature coefficient |
TVJ = 25° | 4,85 | 5
3375 |
5,15 | kΩ
K |
Outlines E2-Pack
Bemerkung / Note:
- Measure without tolerances according DIN ISO 2768-T1-m
- PCB hole pattern: see pin position
- Tolerance of pin position and PCB hole pattern: 0.1
- Diameter of drill: Ø 2.35 mm
- Diameter of plated holes:Ø 2.14 – 2.29 mm (Cu thickness in via typ. 50 μm)
- Plating: chem. Sn max. 15 μm
- Insert Force: per terminal with a typ. insert speed of 7 mm/s: typ. 90 N
- Further information: www.ixys.com Application note IXAN0077
- Mounting instruction: www.ixys.com Application note IXAN0024
Detail A: Mounting on PCB
- Recommended, self-tapping screw: EJOT PT® (size: K25)
- Max. screw length: PCB-Dicke / thickness + 6 mm (hole depth)
- Recommended mounting torque:1.5 Nm
Rectifier
Brake IGBT + Diode
Documents / Resources
 |
IXYS MDNA3High Voltage Standard Rectifier Module [pdf] Owner's Manual MDNA360UB2200PTED, MDNA3 High Voltage Standard Rectifier Module, MDNA3, High Voltage Standard Rectifier Module, Voltage Standard Rectifier Module, Standard Rectifier Module, Rectifier Module |